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Congratulations to Kuo-Yu Hsiang for receiving the Taiwan Semiconductor Industry Association (TSIA) 2024 Semiconductor Award(TSIA半導體獎)!

Congratulations on the acceptance of the paper at the International Electron Device Meeting (IEDM) 2024! 

• C.-H. Liu, K.-Y. Hsiang, F.-S. Chang, Y.-T. Chang, C. W. Liu, and M. H. Lee*, “Energy Material for Extreme Environment: Unveiling Novel Self-Resilience of Hf1-xZrxO2 for Electrostatic Energy Storage (EES) and Pyroelectric Energy Harvesting (PEH), ” accepted by Technical Digest, International Electron Device Meeting (IEDM), San Francisco, Dec. 7-11, 2024.

Congratulations to Kuo-Yu Hsiang for receiving the TSMC Pathfinding 33T offer! 

Congratulations on the publication of the paper at the Symposium on VLSI Technology and Circuits 2023!

•  J.-Y. Lee, F.-S. Chang, K.-Y. Hsiang, P.-H. Chen, Z.-F. Luo, Z.-X. Li, J.-H. Tsai, C. W. Liu, and M. H. Lee*, “3D Stackable Vertical Ferroelectric Tunneling Junction (V-FTJ) with on/off Ratio 1500x, Applicable Cell Current, Self-Rectifying Ratio 1000x, Robust Endurance of 109 Cycles, Multilevel and Demonstrated Macro Operation Toward High-Density BEOL NVMs, ” Symposium on VLSI Technology and Circuits, T10-2, pp. 1-2, Kyoto, Japan, 11-16, June, 2023.

• K.-Y. Hsiang, J.-Y. Lee, F.-S. Chang, Z.-F. Lou, Z.-X. Li, Z.-H. Li, J.-H. Chen, C. W. Liu, T.-H. Hou, and M. H. Lee*, “FeRAM Recovery up to 200 Periods with Accumulated Endurance 1012 Cycles and an Applicable Array Circuit toward Unlimited eNVM Operations, ” Symposium on VLSI Technology and Circuits, T2-4, pp. 1-2, Kyoto, Japan, 11-16, June, 2023.

• Yu-Rui Chen, Yi-Chun Liu, Zefu Zhao, Wan-Hsuan Hsieh, Jia-Yang Lee, Chien-Te Tu, Bo-Wei Huang, Jer-Fu Wang, Shee-Jier Chueh, Yifan Xing, Guan-Hua Chen, Hung-Chun Chou, Dong Soo Woo, M. H. Lee, and C. W. Liu*, “First Stacked Nanosheet FeFET Featuring Memory Window of 1.8V at Record Low Write Voltage of 2V and Endurance >1E11 Cycles, ” Symposium on VLSI Technology and Circuits, T5-3, pp. 1-2, Kyoto, Japan, 11-16, June, 2023.

Congratulations on the publication of the invited paper in IEEE Transactions on Electron Devices (TED) 2023!

• (SCI, EI) K.-Y. Hsiang, J.-Y. Lee, Z.-F. Lou, F.-S. Chang, Y.-C. Chen, Z.-X. Li, M. H. Liao, C. W. Liu, T.-H. Hou, P. Su, and M. H. Lee*, “Fatigue Mechanism of Antiferroelectric Hf0.1Zr0.9O2 Toward Endurance Immunity by Opposite Polarity Cycling Recovery (OPCR) for eDRAM, ” IEEE Trans. on Electron Device, vol. 70, no. 4, pp. 2142-2146, 2023. https://doi.org/ 10.1109/TED.2023.3238364

Congratulations on the publication of the paper in APL Applied Physics Letters 2023! 

• (SCI) Chun-Yu Liao, Chen-Ying Lin, Zhi-Xian Li, Kuo-Yu Hsiang, Zhao-Feng Lou, Vita Pi-Ho Hu, and Min-Hung Lee*, “Mechanisms of instability retention for ferroelectric field effect transistors with HfZrO2 gate stack scaling down, ” Appl. Phys. Lett., vol. 121, 252902, 2022. https://doi.org/10.1063/5.0111592

Congratulations on the publication of the paper at the International Electron Device Meeting (IEDM) 2022! 

• C.-Y. Liao, Z.-F. Lou, C.-Y. Lin, A. Senapati, R. Karmakar, K.-Y. Hsiang, Z.-X. Li, W.-C. Ray, J.-Y. Lee, P.-H. Chen, F.-S. Chang, H.-H. Tseng, C.-C. Wang, J.-H. Tsai, Y.-T. Tang, S. T. Chang, C. W. Liu, S. Maikap*, and M. H. Lee*, “Superlattice HfO2-ZrO2 based Ferro-Stack HfZrO2 FeFETs: Homogeneous-Domain Merits Ultra-Low Error, Low Programming Voltage 4 V and Robust Endurance 109 cycles for Multibit NVM, ” Technical Digest, International Electron Device Meeting (IEDM), pp. 878-881, San Francisco, Dec. 3-7, 2022.

•  K.-Y. Hsiang, Y.-C. Chen, F.-S. Chang, C.-Y. Lin, C.-Y. Liao, Z.-F. Lou, J.-Y. Lee, W.-C. Ray, Z.-X. Li, C.-C. Wang, H.-C. Tseng, P.-H. Chen, J.-H. Tsai, M. H. Liao, T.-H. Hou, C. W. Liu, P.-T. Huang, P. Su, and M. H. Lee*, “Novel Opposite Polarity Cycling Recovery (OPCR) of HfZrO2 Antiferroelectric-RAM with an Access Scheme Toward Unlimited Endurance, ” Technical Digest, International Electron Device Meeting (IEDM), pp. 763-766, San Francisco, Dec. 3-7, 2022.

• Yu-Chen Chen*, Kuo-Yu Hsiang, Min-Hung Lee, and Pin Su*, “Monte-Carlo Modeling and Characterization of Switching Dynamics for Antiferroelectric/Ferroelectric HZO considering Mechanisms of Fatigue, ” Technical Digest, International Electron Device Meeting (IEDM), pp. 310-313, San Francisco, Dec. 3-7, 2022.(Collaboratively published with NYCU)

Congratulations on the publication of the paper at the Symposium on VLSI Technology and Circuits 2022! 

• C.-Y. Liao, K.-Y. Hsiang, Z.-F. Lou, H.-C. Tseng, C.-Y. Lin, Z.-X. Li, F.-C. Hsieh, C.-C. Wang, F.-S. Chang, W.-C. Ray, Y.-Y. Tseng, S. T. Chang, T.-C. Chen, and M. H. Lee*, “Endurance > 1011 Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO2 to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVM, ” Symposium on VLSI Technology and Circuits, pp. 393-394, Honolulu, Hawaii, 12-17, June, 2022.

• H.-L. Chiang, J.-F. Wang, K.-H. Lin, C.-H. Nien, J.-J. Wu, K.-Y. Hsiang, C.-P. Chuu, Y.-W. Chen, X.W. Zhang, C. W. Liu, Tahui Wang, C.-C. Wang, M.-H. Lee, M.-F. Chang, C.-S. Chang, T.C. Chen*, “Interfacial-Layer Design for Hf1-xZrxO2-Based FTJ Devices: From Atom to Array, ” Symposium on VLSI Technology and Circuits, pp. 361-362, Honolulu, Hawaii, 12-17, June, 2022.

Congratulations on the publication of the paper in IEEE Electron Device Letters 2022! 

• (SCI, EI) K.-Y. Hsiang, C.-Y. Liao, J.-H. Liu, C.-Y. Lin, J.-Y. Lee, Z.-F. Lou, F.-S. Chang, W.-C. Ray, Z.-X. Li, H.-C. Tseng, C.-C. Wang, M. H. Liao, T.-H. Hou, and M. H. Lee*, “Dielectric Layer Design of Bilayer Ferroelectric and Antiferroelectric Tunneling Junctions Toward 3D NAND-Compatible Architecture, ” IEEE Electron Device Letter, vol. 43, no. 11, pp. 1850-1853, 2022. Doi:10.1109/LED.2022.3204445

• (SCI, EI) C.-Y. Liao, K.-Y. Hsiang, C.-Y. Lin, Z.-F. Lou, Z.-X. Li, H.-C. Tseng, F.-S. Chang, W.-C. Ray, C.-C. Wang, J.-Y. Lee, P.-H. Chen, J.-H. Tsai, M.-H. Liao, and M. H. Lee*, “Experimental Insights of Reverse Switching Charge for Antiferroelectric Hf0.1Zr0.9O2, ” IEEE Electron Device Letter, vol. 43, no. 9, pp. 1559-1562, 2022. DOI: https://doi.org/10.1109/LED.2022.3189669

Congratulations to our lab team for winning the 2022 Future Tech Award(未來科技獎)! (計畫名稱:高遷移率材料、製程、多層疊元件及熱電路模型；鐵電鉿基氧化物之負電容特性研究及相關應用；先進原子層材料與模組技術)

Congratulations to Kuo-Yu Hsiang for being selected as a Top Ranked Student Paper at IEDM 2022 and receiving an invitation for a featured submission to the IEEE Special Issue!

Congratulations to Jun-Yu Liao for being awarded the CTCI Foundation Science and Technology Scholarship(中技社獎學金) in 2021!

Congratulations to Professor Min-Hung Lee for being awarded the Outstanding Young Scholar(優秀年輕學者) by the National Science and Technology Council (NSTC) for the years 2013 and 2016! 

Congratulations to my student Cheng-Ying Kao for winning the First Prize in the Nanoelectronics category(奈米電子頭等獎)  at the 18th Symposium on Nano Device Technology (SNDT) in 2011!

Congratulations to my student Wei-Ning Tseng for receiving the Outstanding Student Paper Award(傑出學生論文優選獎 ) at the 17th Symposium on Nano Device Technology (SNDT) in 2010!

Congratulations to my student Yong-Tsung Liu for winning the Outstanding Student Paper(學生論文優選獎 ) Award in Functional Nanomaterials Technology at the 15th Symposium on Nano Device Technology (SNDT) in 2008!