Latest News
Latest News
2025
Congratulations to Professor Min-Hung Lee for
receiving 2025 Chenming Hu Award (胡正明半導體創新獎)!
2024
Congratulations to Kuo-Yu Hsiang for receiving the Taiwan Semiconductor Industry Association (TSIA) 2024 Semiconductor Award(TSIA半導體獎)!
Congratulations on the acceptance of the paper at the International Electron Device Meeting (IEDM) 2024!
C.-H. Liu, K.-Y. Hsiang, F.-S. Chang, Y.-T. Chang, C. W. Liu, and M. H. Lee*, “Energy Material for Extreme Environment: Unveiling Novel Self-Resilience of Hf1-xZrxO2 for Electrostatic Energy Storage (EES) and Pyroelectric Energy Harvesting (PEH), ” accepted by Technical Digest, International Electron Device Meeting (IEDM), San Francisco, Dec. 7-11, 2024.
Congratulations to Kuo-Yu Hsiang for receiving the TSMC Pathfinding 33T offer!
Congratulations to Professor Min-Hung Lee for receiving the National Science and Technology Council (NSTC) 2024 Outstanding Research Award in Micro-electronics Engineering(國科會傑出研究獎-微電子工程)!
Congratulations to Professor Min-Hung Lee along with NTNU Physics Professors Yann-Wen Lan and Ting-Hua Lu, NYCU Electrophysics Associate Professor Chun-Liang Lin and NCKU Physics Distinguished Professor Yi-Chun Chen, for their collaborative development of an innovative ferroelectric transistor based on the 2D material MoS2 , published in Nature Electronics!
2023
Congratulations on the publication of the paper at the Symposium on VLSI Technology and Circuits 2023!
J.-Y. Lee, F.-S. Chang, K.-Y. Hsiang, P.-H. Chen, Z.-F. Luo, Z.-X. Li, J.-H. Tsai, C. W. Liu, and M. H. Lee*, “3D Stackable Vertical Ferroelectric Tunneling Junction (V-FTJ) with on/off Ratio 1500x, Applicable Cell Current, Self-Rectifying Ratio 1000x, Robust Endurance of 109 Cycles, Multilevel and Demonstrated Macro Operation Toward High-Density BEOL NVMs, ” Symposium on VLSI Technology and Circuits, T10-2, pp. 1-2, Kyoto, Japan, 11-16, June, 2023.
K.-Y. Hsiang, J.-Y. Lee, F.-S. Chang, Z.-F. Lou, Z.-X. Li, Z.-H. Li, J.-H. Chen, C. W. Liu, T.-H. Hou, and M. H. Lee*, “FeRAM Recovery up to 200 Periods with Accumulated Endurance 1012 Cycles and an Applicable Array Circuit toward Unlimited eNVM Operations, ” Symposium on VLSI Technology and Circuits, T2-4, pp. 1-2, Kyoto, Japan, 11-16, June, 2023.
Yu-Rui Chen, Yi-Chun Liu, Zefu Zhao, Wan-Hsuan Hsieh, Jia-Yang Lee, Chien-Te Tu, Bo-Wei Huang, Jer-Fu Wang, Shee-Jier Chueh, Yifan Xing, Guan-Hua Chen, Hung-Chun Chou, Dong Soo Woo, M. H. Lee, and C. W. Liu*, “First Stacked Nanosheet FeFET Featuring Memory Window of 1.8V at Record Low Write Voltage of 2V and Endurance >1E11 Cycles, ” Symposium on VLSI Technology and Circuits, T5-3, pp. 1-2, Kyoto, Japan, 11-16, June, 2023.
Congratulations on the publication of the invited paper in IEEE Transactions on Electron Devices (TED) 2023!
(SCI, EI) K.-Y. Hsiang, J.-Y. Lee, Z.-F. Lou, F.-S. Chang, Y.-C. Chen, Z.-X. Li, M. H. Liao, C. W. Liu, T.-H. Hou, P. Su, and M. H. Lee*, “Fatigue Mechanism of Antiferroelectric Hf0.1Zr0.9O2 Toward Endurance Immunity by Opposite Polarity Cycling Recovery (OPCR) for eDRAM, ” IEEE Trans. on Electron Device, vol. 70, no. 4, pp. 2142-2146, 2023. https://doi.org/ 10.1109/TED.2023.3238364
(SCI) Chun-Yu Liao, Chen-Ying Lin, Zhi-Xian Li, Kuo-Yu Hsiang, Zhao-Feng Lou, Vita Pi-Ho Hu, and Min-Hung Lee*, “Mechanisms of instability retention for ferroelectric field effect transistors with HfZrO2 gate stack scaling down, ” Appl. Phys. Lett., vol. 121, 252902, 2022. https://doi.org/10.1063/5.0111592
Congratulations to Cheng-Hong Liu for participating in the International Electron Devices & Materials Symposium 2023 (IEDMS) and winning the Best Oral Paper Award in 2023!
2022
Congratulations on the publication of the paper at the International Electron Device Meeting (IEDM) 2022!
C.-Y. Liao, Z.-F. Lou, C.-Y. Lin, A. Senapati, R. Karmakar, K.-Y. Hsiang, Z.-X. Li, W.-C. Ray, J.-Y. Lee, P.-H. Chen, F.-S. Chang, H.-H. Tseng, C.-C. Wang, J.-H. Tsai, Y.-T. Tang, S. T. Chang, C. W. Liu, S. Maikap*, and M. H. Lee*, “Superlattice HfO2-ZrO2 based Ferro-Stack HfZrO2 FeFETs: Homogeneous-Domain Merits Ultra-Low Error, Low Programming Voltage 4 V and Robust Endurance 109 cycles for Multibit NVM, ” Technical Digest, International Electron Device Meeting (IEDM), pp. 878-881, San Francisco, Dec. 3-7, 2022.
K.-Y. Hsiang, Y.-C. Chen, F.-S. Chang, C.-Y. Lin, C.-Y. Liao, Z.-F. Lou, J.-Y. Lee, W.-C. Ray, Z.-X. Li, C.-C. Wang, H.-C. Tseng, P.-H. Chen, J.-H. Tsai, M. H. Liao, T.-H. Hou, C. W. Liu, P.-T. Huang, P. Su, and M. H. Lee*, “Novel Opposite Polarity Cycling Recovery (OPCR) of HfZrO2 Antiferroelectric-RAM with an Access Scheme Toward Unlimited Endurance, ” Technical Digest, International Electron Device Meeting (IEDM), pp. 763-766, San Francisco, Dec. 3-7, 2022.
Yu-Chen Chen*, Kuo-Yu Hsiang, Min-Hung Lee, and Pin Su*, “Monte-Carlo Modeling and Characterization of Switching Dynamics for Antiferroelectric/Ferroelectric HZO considering Mechanisms of Fatigue, ” Technical Digest, International Electron Device Meeting (IEDM), pp. 310-313, San Francisco, Dec. 3-7, 2022.(Collaboratively published with NYCU)
Congratulations on the publication of the paper at the Symposium on VLSI Technology and Circuits 2022!
C.-Y. Liao, K.-Y. Hsiang, Z.-F. Lou, H.-C. Tseng, C.-Y. Lin, Z.-X. Li, F.-C. Hsieh, C.-C. Wang, F.-S. Chang, W.-C. Ray, Y.-Y. Tseng, S. T. Chang, T.-C. Chen, and M. H. Lee*, “Endurance > 1011 Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO2 to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVM, ” Symposium on VLSI Technology and Circuits, pp. 393-394, Honolulu, Hawaii, 12-17, June, 2022.
H.-L. Chiang, J.-F. Wang, K.-H. Lin, C.-H. Nien, J.-J. Wu, K.-Y. Hsiang, C.-P. Chuu, Y.-W. Chen, X.W. Zhang, C. W. Liu, Tahui Wang, C.-C. Wang, M.-H. Lee, M.-F. Chang, C.-S. Chang, T.C. Chen*, “Interfacial-Layer Design for Hf1-xZrxO2-Based FTJ Devices: From Atom to Array, ” Symposium on VLSI Technology and Circuits, pp. 361-362, Honolulu, Hawaii, 12-17, June, 2022.
Congratulations on the publication of the paper in IEEE Electron Device Letters 2022!
(SCI, EI) K.-Y. Hsiang, C.-Y. Liao, J.-H. Liu, C.-Y. Lin, J.-Y. Lee, Z.-F. Lou, F.-S. Chang, W.-C. Ray, Z.-X. Li, H.-C. Tseng, C.-C. Wang, M. H. Liao, T.-H. Hou, and M. H. Lee*, “Dielectric Layer Design of Bilayer Ferroelectric and Antiferroelectric Tunneling Junctions Toward 3D NAND-Compatible Architecture, ” IEEE Electron Device Letter, vol. 43, no. 11, pp. 1850-1853, 2022. Doi:10.1109/LED.2022.3204445
(SCI, EI) C.-Y. Liao, K.-Y. Hsiang, C.-Y. Lin, Z.-F. Lou, Z.-X. Li, H.-C. Tseng, F.-S. Chang, W.-C. Ray, C.-C. Wang, J.-Y. Lee, P.-H. Chen, J.-H. Tsai, M.-H. Liao, and M. H. Lee*, “Experimental Insights of Reverse Switching Charge for Antiferroelectric Hf0.1Zr0.9O2, ” IEEE Electron Device Letter, vol. 43, no. 9, pp. 1559-1562, 2022. DOI: https://doi.org/10.1109/LED.2022.3189669
Congratulations to our lab team for winning the 2022 Future Tech Award(未來科技獎)! (計畫名稱:高遷移率材料、製程、多層疊元件及熱電路模型;鐵電鉿基氧化物之負電容特性研究及相關應用;先進原子層材料與模組技術)
Congratulations to Kuo-Yu Hsiang for being selected as a Top Ranked Student Paper at IEDM 2022 and receiving an invitation for a featured submission to the IEEE Special Issue!
2021
Congratulations to Chun-Wei Chang for participating in the International Electron Devices & Materials Symposium 2021 (IEDMS) and winning the Best Poster Paper Award(最佳海報論文獎)!
Congratulations to Asim Senapati for participating in the International Electron Devices & Materials Symposium 2021 (IEDMS) and winning the Excellent Poster Paper Award(佳作海報論文獎)!
Congratulations to Jun-Yu Liao for being awarded the CTCI Foundation Science and Technology Scholarship(中技社獎學金) in 2021!
2020~
Congratulations to our laboratory for mentoring Chien-Kuo High School students Jun-Kai Yang and Po-Chieh Liu, who won Fourth Prize(四等獎) at the Taiwan International Science Fair(台灣國際科展) (TISF) in 2020!
Congratulations to Dr. Kuan-Ting Chen, Postdoctoral Researcher, for receiving the "2020 Academic Research Award for Postdoctoral Researchers." (博士後研究人員學術研究獎 )!
Congratulations to Professor Min-Hung Lee for becoming an IEEE Senior Member in 2019!
Congratulations to Professor Min-Hung Lee for being awarded the Senior Excellent Teacher for the 2017 academic year and the Excellent Teacher for the 2018 academic year!
Congratulations to doctoral student Pin-Kuang Chen for receiving the 2016 TSIA Semiconductor Award(TSIA半導體獎)!
Congratulations to Professor Min-Hung Lee for being awarded the Outstanding Young Scholar(優秀年輕學者) by the National Science and Technology Council (NSTC) for the years 2013 and 2016!
Congratulations to Kuan-Ting Chen for receiving the "Outstanding Award" (論文特優獎) in the Graduate Thesis Competition of the College of Engineering at National Chung Hsing University for the 2015 academic year!
Congratulations to my student Cheng-Ying Kao for winning the First Prize in the Nanoelectronics category(奈米電子頭等獎) at the 18th Symposium on Nano Device Technology (SNDT) in 2011!
Congratulations to my student Wei-Ning Tseng for receiving the Outstanding Student Paper Award(傑出學生論文優選獎 ) at the 17th Symposium on Nano Device Technology (SNDT) in 2010!
Congratulations to my student Yong-Tsung Liu for winning the Outstanding Student Paper(學生論文優選獎 ) Award in Functional Nanomaterials Technology at the 15th Symposium on Nano Device Technology (SNDT) in 2008!