Source-Gated Transistors

Background

Energy-efficient electronics requires transistors that operate at low voltage while providing stable and controllable output currents. These characteristics are particularly valuable for thin-film circuits used in sensing, signal amplification and distributed electronic systems.

Source-gated transistors (SGTs) control current through carrier injection and depletion near an engineered source contact. This architecture enables early current saturation and high output impedance, offering opportunities for low-power operation and high-gain circuits. Its applicability to different thin-film semiconductors also motivates research into flexible electronics and monolithic three-dimensional integration.

Our Research

Our research investigates semiconductor materials and source-contact architectures for low-power, source-controlled electronics. We examine how interface properties and device geometry govern carrier injection, current saturation and circuit performance. By combining device fabrication, electrical characterization, spatial potential mapping and TCAD simulations, we connect operating mechanisms with practical design strategies. Our interests include oxide and amorphous-silicon devices, analog circuits and integration approaches compatible with constrained processing temperatures.

Outlook

Energy-efficient electronics spans display backplanes, distributed sensors, and vertically integrated semiconductor systems. Expertise in TCAD, TFT fabrication, contact engineering, and electrical characterization can contribute across these areas, linking device concepts with process integration, uniformity, and circuit performance.

Publications