Atomic layer deposition (ALD) is a key technique that enables the growth of functional thin films for next-generation memories, accordingly, recent advances grown by ALD technique are addressed.

Semiconductor memories are important electronic components in modern electronic systems. We use the memories in computers and smartphones, and many electronic devices. We research functional materials for next-generation memories such as DRAM (Dynamic Random Access Memory) and ReRAM (Resistive-switching Random Access Memory).

2-Dimensional systems (Graphene and etc.) have been attracting great attention in nano-electronics (i.e. nano transistors). 2-Dimensional Electron Gas (2-DEG) using SrTiO3 (STO)-based heterostructures provide promising opportunities in oxide nano-electronics, recently.

So far, most of the LaAlO3 (LAO) films were grown epitaxially by pulsed laser deposition (PLD) on single crystalline (001) STO substrates. We research the formation of 2-DEG using several amorphous layers grown by the atomic layer deposition (ALD) technique.