Journals:
ED Kurniawan, A Adam, MI Salik, PL Gareso; Programmable Syringe Pump for Selective Micro Droplet Deposition; Jurnal Elektronika dan Telekomunikasi Vol 19, No 2 (2019), 75-82.
YR Lin, CH Cheng, YR Jhan, ED Kurniawan, YT Du, YH Lin, YC Wu; Hybrid P-Channel/N-Substrate Poly-Si Nanosheet Junctionless Field-Effect Transistors With Trench and Gate-All-Around Structure; IEEE Transactions on Nanotechnology 17 (5), 1014-1019.
ED Kurniawan, H Yang, CC Lin, YC Wu; Effect of fin shape of tapered FinFETs on the device performance in 5-nm node CMOS technology; Microelectronics Reliability 83, 254-259.
ED Kurniawan, KH Peng, SY Yang, YY Yang, V Thirunavukkarasu, YH Lin, YC Wu; Ge-cap quantum-well bulk FinFET for 5 nm node CMOS integration; Japanese Journal of Applied Physics 57 (4S), 04FD17.
MJ Tsai, YY Chiang, YR Lin, ED Kurniawan, YC Wu; Hybrid N-Type Poly-Si Ultra-Thin Nanowire Shell Channel with P-Substrate Structure by Electron Beam Lithography Adjustment for Junctionless Field-Effect Transistors; ECS Journal of Solid State Science and Technology 7 (11), Q201-Q205.
YR Lin, YY Yang, YH Lin, ED Kurniawan, MS Yeh, LC Chen, YC Wu; Performance of Stacked Nanosheets Gate-All-Around and Multi-Gate Thin-Film-Transistors; IEEE Journal of the Electron Devices Society 6, 1187-1191.
V Thirunavukkarasu, J Lee, T Sadi, VP Georgiev, FA Lema, KP Soundarapandian, YR Jhan, SY Yang, YR Lin, ED Kurniawan, YC Wu, A Asenov ; Investigation of inversion, accumulation and junctionless mode bulk Germanium FinFETs; Superlattices and Microstructures 111, 649-655.
V Thirunavukkarasu, YR Jhan, YB Liu, ED Kurniawan, YR Lin, SY Yang, CH Cheng, YC Wu; Gate-all-around junctionless silicon transistors with atomically thin nanosheet channel (0.65 nm) and record sub-threshold slope (43 mV/dec); Applied Physics Letters 110 (3), 032101.
ED Kurniawan, SY Yang, V Thirunavukkarasu, YC Wu; Analysis of Ge-Si heterojunction nanowire tunnel FET: impact of tunneling window of band-to-band tunneling model; Journal of The Electrochemical Society 164 (11), E3354-E3358.
Conferences:
ED Kurniawan, YT Du, YC Wu; Performance Evaluation of Vertically Stacked Nanosheet InGaAs/InAlAs/InP Double Quantum Well FinFET on Si Substrate; The 2020 International Conference on Radar, Antenna, Microwave, Electronics, and Telecommunications (ICRAMET), pp. 362-365.
RV Manurung, M Marakka, A Pide, ED Kurniawan, IDP Hermida; Screen Printed Electrochemical Sensor for Ascorbic Acid Detection Based on Nafion/Ionic Liquids/Graphene Composite on Carbon Electrodes; The 2020 International Conference on Radar, Antenna, Microwave, Electronics, and Telecommunications (ICRAMET), pp. 291-295.
ED Kurniawan, M Riswan, MSA Al Ba'id, PL Gareso; Development of Uniform Ultraviolet Light Source using Light-Emitting Diode (LED) Array for Photolithography System with Controllable Exposure Dose and Duration; The 2019 International Conference on Radar, Antenna, Microwave, Electronics, and Telecommunications (ICRAMET), pp. 84-88.
BA Prabowo, ED Kurniawan, K-C Liu, A Purwidyantri; The Trade-Off Performance of Surface Plasmon Resonance Sensing Utilizing Thin Layer Oxide Under the Metal Layer; The 2019 International Conference on Radar, Antenna, Microwave, Electronics, and Telecommunications (ICRAMET), pp. 122-125.
ED Kurniawan, YT Du, YC Wu, YH Lin; Optimization of Leakage Current Suppression for Super Steep Retrograde Well (SSRW) 5nm-node FinFET Technology; The 2018 International Conference on Radar, Antenna, Microwave, Electronics, and Telecommunications (ICRAMET), pp. 104-107.
IPRs:
Semiconductor device, Inventor: SM Yang, S Gene, AFY Pramudyo, ED Kurniawan - US Patent US9,331,196, 2016 / TW TWI565052B 2017 (Granted).
Peralatan Pendeteksi Kandungan Nitrat di Dalam Tanah, Inventor: RV Manurung, ED Kurniawan, M Muljono - ID Patent IDP000065984, 2020 (Granted).
Aplikasi Android Untuk Smart Innovated Ventilator Indonesia (SI-Venesia), Inventor: B Prawara, DP Kurniadi, ED Kurniawan, H Arisesa, D Mahmudin, EJ Pristianto, D Kurniawan, P Daud, H Soepriyadi - ID Copyright EC00202064772, 2021