[3] RESISTIVE SWITCHING MEMORY DEVICE BASED ON MULTI-INPUT, 16/932,029, USA, (ISSUED) 10-2294284, Korea, (ISSUED)
[2] BIODEGRADABLE FIELD EFFECT TRANSISTOR AND A METHOD OF MANUFACTURING THE SAME, 10-2093502, Korea (ISSUED)
[1] FIELD EFFECT TRANSISTOR INCLUDING PEPTIDE BASED MATERIAL AND A METHOD OF MANUFACTURING THE SAME, 10-1888256, Korea (ISSUED)