Embedded Files
“In-depth 2D FEM analysis of gate cracking in SiC MOSFETs under repetitive short-circuit conditions: Application of a damage-based model for crack length prediction”
Mustafa Shqair, Emmanuel Sarraute, Frédéric Richardeau
“Preliminary 2D Elastoplastic Modeling of Gate Cracking in SiC MOSFETs Under Short-Circuit Conditions Across a Wide Temperature-Range Using Rankine's Damage Energetic Approach”
Mustafa Shqair, Emmanuel Sarraute, Frédéric Richardeau
“A Full Transient ElectroThermal-Elastoplastic Mechanical and Metallurgical 2D FEM of SiC MOSFET for Gate-Region Stress Investigation under Short-Pulse Short-Circuit”
Mustafa Shqair, Emmanuel Sarraute, Frédéric Richardeau
“Transient Thermal 2D FEM Analysis of SiC MOSFET in Short-Circuit Operation Including High-temperature Material Laws and Phase Transition of Aluminum Source Electrode”
Mustafa Shqair, Emmanuel Sarraute, Thibauld Cazimajou, Frédéric Richardeau
“Thermo-mechanical and metallurgical preliminary analysis of SiC MOSFET gate-damage mode under short-circuit based on a complete transient multiphysics 2D FEM”
Mustafa Shqair, Emmanuel Sarraute, Thibauld Cazimajou, Frédéric Richardeau
“An EBSD Study of Fatigue Crack Propagation in Bonded Aluminum Wires Cycled from 55°C to 85°C”
Ayda Halouani, Zoubir Khatir, Mustafa Shqair, Ali Ibrahim, Pierre-Yves Pichon
“Microstructural evolution during the crack propagation at the bond-wire contact area of IGBT power modules upon power cycling”
Mustafa Shqair, Zoubir Khatir, Ali Ibrahim, Ayda Halouani, Mounira Berkani
“Finite elements analyses of early-stage crack propagation in aluminum wire bonds due to power cycling”
Ayda Halouani, Mustafa Shqair, Zoubir Khatir, Ali Ibrahim, Merouane Ouhab
“A combined physicochemical-microstructural approach to predict the crack path at the topside interconnections in IGBT power devices”
Mustafa Shqair, Zoubir Khatir, Ali Ibrahim, Mounira Berkani, Ayda Halouani, Tayssir Hamieh
“Physicochemical-microstructural approach for modeling the crack passage at topside metallic parts in IGBT semiconductor power electronics”
Mustafa Shqair, Zoubir Khatir, Ali Ibrahim, Mounira Berkani, Ayda Halouani, Tayssir Hamieh
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