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B. Wide Bandgap Semiconductor Technology
B. Wide Bandgap Semiconductor Technology
Platform for SiC Power System on a Chip – Progress Report
Platform for SiC Power System on a Chip – Progress Report
Abstract
Abstract
Silicon carbide (SiC) is the most promising wide bandgap semiconductor material for applications at high temperature, high voltage, and high current environment, such as energy networks, rail transport, new energy vehicles, and aerospace industry. These applications have a great impact on people's livelihood. To enhance the R&D level in Taiwan, the 4-year project entitled “Platform for SiC Power System on a Chip” was funded by the Ministry of Science and Technology, Taiwan, R.O.C. since 2018.
This project aims at SiC smart power semiconductor devices and technologies in order to implement a full SiC power system platform. Subproject 1 “SiC CMOS device and IC process technology” studies 10 V CMOSFETs to implement CMOS logic and control circuits. Subproject 2 “Research and Development of High-Reliability and High-Voltage Silicon Carbide Lateral Device Technology” studies 100-600 V SiC Bipolar-CMOS-LDMOS process platform to provide a variety of high-strength and high-reliability lateral SiC high-voltage device and isolation for SiC gate drive circuit design; Subproject 3 “Silicon Carbide Multilayer Epitaxy Technology and Deep Groove Backfill Technology in Vertical High Power Device Manufacturing Process” studies 600 ~ 3300 V SiC super junction power MOSFET and its corresponding terminal structure.
In this talk, the status, main achievemens, and future perspectives of this project will be presented. Further discussion and cooperation are welcome.
崔秉鉞(Bing-Yue Tsui)
崔秉鉞(Bing-Yue Tsui)
Bing-Yue Tsui was born in Chiayi, Taiwan, R.O.C., in 1963. He received the B.S., M.S., and Ph.D. degrees from the National Chiao-Tung University, Hsinchu, Taiwan, in 1985, 1987, and 1992, respectively, all in electronics engineering.
He joined the Electronics Research and Service Organization, Industrial Technology Research Institute (ERSO/ITRI) in Hsinchu, Taiwan, R.O.C., in October, 1992. From 1992 to 1994, he worked on 0.5 μm/16 Mb DRAM process integration. Since 1995, he led the Deep Sub-micron Device Technology Group to develop sub-quarter-micron Si CMOS technology. Since 1997, he was project leader and section manager of Etching Technology Section. Since 1998, he led the Etching and Process Integration Department to develop the deep sub-micron Al-interconnect and Cu/low κ interconnect technologies. He became a faculty of the Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University in 1999. He was the Director of Nano Facility Center at NCTU from Aug. 2007 to Jul. 2012. Currently, he is a Professor at the Institute of Electronics, National Chiao-Tung University.
Prof. Tsui won the Best Service Award of the Industrial Technology Research Institute in 1996 and was elected as the Outstanding Young People, Hsinchu City, R. O. C., in 1997. He was awarded the Research Paper Award by the Industrial Technology Research Institute and the Outstanding Young Electrical Engineer by the Institute of Chinese Engineer, both in 1998. He was also awarded the Highly-Cited Patent Award by the Industrial Technology Research Institute in 2006.
Prof. Tsui has authored and co-authored more than 100 journal papers and 170 international conference papers. He also owns 39 ROC and international patents. Since 2011, his research interest is Ge-based nano devices and process technologies and SiC-based power devices and process technologies.
Prof. Tsui is a member of Phi Tau Phi and a senior member of IEEE. He also is a life member of the Electron Devices and Materials Association, the Chinese Institute Engineers, the Chinese Institute of Electrical Engineering, and the Material Science Association. His name is listed in Who is Who in the World, Who is Who in Finance and Industry, Who is Who in Science and Engineering, and Who is Who in Asia and the Pacific Nations.
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