2022
01. Analysis for DC and RF Characteristics recessed-gate GaN MOSFET using stacked TiO2/Si3N4 dual-layer insulator; Materials (2022.01).
02. Large-area perovskite solar cells employing spiro-Naph hole transport material; Nature Photonics (2022.02).
03. Environmentally and electrically stable sol-gel-deposited SnO2 thin-film transistors with controlled passivation layer diffusion penetration depth that minimizes mobility degradation; ACS Applied Materials & Interfaces (2022.03).
04. Flexible sol-gel-processed Y2O3 RRAM devices obtained via UV/Ozone-assisted photochemical annealing process; Materials (2022.03).
05. Enhanced switching reliability of sol-gel-processed Y2O3 RRAM devices based on YwO3 surface roughness-induced local electric field; Materials (2022.03).
06. Effects of blended poly(3-hexylthiophene) and 6,13-bis(triisopropylsilylethynyl) pentacene organic semiconductors on the photoresponse characteristics of thin-film transistors; Korean Journal of Metals and Materials (2022.03).
07. Room-temperature high-detectivity flexible near-infrared photodetectors with chalcogenide silver telluride nanoparticles; ACS OMEGA (2022.03).
08. Fabrication and Performances of Recessed Gate AlGaN/GaN MOSFETs with Si3N4/TiO2 Stacked Dual Gate Dielectric; Journal of Semiconductor Technology and Science (2022.04).
09. Atomic Structure Evaluation of Solution-Processed a-IZO Films and Electrical Behavior of a-IZO TFTs; Materials (2022.05).
10. (D.-K. Kim, et al) Viable strategy to minimize trap states of patterned oxide thin films for both exceptional electrical performance and uniformity in sol-gel processed transistors; Chemical Engineering Journal (2022.08).
11. 3-D stacked polycrystalline-silicon-MOSFET-based capacitorless DRAM with superior immunity to grain-boundary's influence; Scientific Reports (2022.08).
12. (Yu-Jin Hwang, et al.) Importance of structural relaxation on the electrical characteristics and bias stability of solution-processed ZnSnO thin-film transistors; Nanomaterials (2022.09).
13. (Sang-Hwa Jeon, et al.) Importance of solvent evaporation temperature in pre-annealing stage for solution-processed Zinc Tin Oxide thin-film transistors; Electronics (2022.09).
14. (Sang-Hwa Jeon, et al.) Washable fabric triboelectric nanogenerators for potential application in face masks; Nanomaterials (2022.09).
15. Systematic Engineering of Metal Ion Injection in Memristors for complex neuromorphic computing with high energy efficiency; Advanced Intelligent Systems (2022.09).
16. Investigation on atomic bonding structure of solution-processed Indium-Zinc-Oxide semiconductors according to doped indium content and its effects on the transistor performance; Materials (2022.09) .
17. Analysis and Optimization for characteristics of vertical GaN junctionless MOSFETs depending on specifications of GaN substrates; Journal of Electrical Engineering & Technology (2022.10).
18. Improved environment stability of Y2O3 RRAM devices with Au passivated Ag top electrodes; Materials (2022.10).
19. Design of a capacitorless DRAM based on a polycrystalline-silicon dual-gate MOSFET with a Fin-Shaped structure; Nanomaterials (2022.10).
20. (Zi-Yuan Wang, et al.) Physico-chemical origins of electrical characteristics and instabilities in solution-processed ZnSnO thin-film transistors; Coatings (2022.10).
21. Design of a capacitorless DRAM based on storage layer separated using separation oxide and polycrystalline silicon; Electronics (2022.10).
22. Organizing reliable polymer electrode lines in flexible neural networks via coffee ring-free micromolding in capillaries; ACS Applied Materials & Interfaces (2022.10).
23. Simulation of CMOS logic inverter based on vertically stacked polycrystalline silicon nanosheet gate-all-around MOSFET and its electrical characteristics; Current Applied Physics (2022.11).