We study the interplay between electrons and phonons in disordered solids across both semiconducting and metallic regimes. By focusing on the roles of structural disorder and lattice vibrations in localization and transport, we develop Green’s function-based methods to uncover the microscopic origins of transport phenomena in disordered solids.

Research topics:

• Amorphous semiconductors (ACS AMI 2023, PRB 2022, JAP 2019)

• Topological semimetals (PRB 2023)

As device technologies move beyond conventional scaling limits, we study the fundamental physics governing logic, memory, and interconnect performance, while advancing the application of emerging materials and novel device concepts for next-generation semiconductor technologies.

Research topics:

• Interconnects (EML 2026, JPCM 2026, JMCC 2022)

• Topological transistors (Nanoscale 2026, Nano Lett. 2026, TED 2024)

• Negative-capacitance FETs (ACS AELM 2025, ACS Nano 2025)

• Atomic layer deposition (ALD) (JVSTA 2024, JPCA 2021, Sci. Rep. 2021, PCCP 2020)

Our research focuses on the materials physics and quantum algorithms underlying solid-state quantum technologies. We investigate material properties that are critical to qubit performance. In parallel, we develop quantum algorithms for simulating classically intractable solid-state systems using quantum computers, thus bridging condensed matter physics and quantum technologies.

Research topics:

• Materials (Nat. Commun. 2022, PRB 2022, PRM 2019)

• Algorithms (JKPS 2023)

Our research relies on first-principles calculations and physics-based modeling. We employ a range of theoretical and computational approaches, including:

• Electronic structure calculations (DFT, tight-binding)

• Green's function methods (NEGF, Kubo formula, DMFT, CPA)

• Electron–phonon interactions

• Machine learning (MLFF-MD, ML-EPM)

• Device modeling and simulation (I–V characteristics)