We study localization, transport, and electron–phonon interactions in amorphous materials. Our research focuses on how structural disorder and lattice vibrations govern charge transport and localization phenomena in disordered solids. 

Topics:

• Transport in disordered solids (JKPS 2026, ACS AMI 2023, PRB 2022)

• Electron–phonon interaction (JPCM 2026, JAP 2019)

We study the materials, processes, and device physics of advanced semiconductor technologies, including logic, memory, interconnects, and heterogeneous integration. Current research interests include low-power devices, hybrid bonding, interconnects, and space radiation effects for future computing systems. 

Topics:

• Topological materials and low-power devices (Nanoscale 2026, Nano Lett. 2026, ACS AELM 2025, ACS Nano 2025, TED 2024, PRB 2023)

• Advanced packaging and interconnects (Chem. Mater. 2026, ACS AMI 2026, CAP 2026, EML 2026, JMCC 2026, JMCC 2022)

• Excited-state dynamics and semiconductor reliability (JVSTA 2024, JPCA 2021, JPCC 2021, Sci. Rep. 2021, PCCP 2020)

We study the materials physics underlying solid-state quantum technologies, with a focus on superconducting qubits and quantum defects. Our research aims to understand defect-related phenomena in quantum devices, including defect-based single-photon emitters (SPEs) and two-level systems (TLSs) in superconducting qubits.

Topics:

• Defect-based quantum technology (Nano Lett. 2026, Nat. Commun. 2022, PRB 2022)

• Two-level systems (TLSs) in superconducting qubits

• Quantum many-body simulation (JKPS 2023)

Our research relies on first-principles calculations and physics-based modeling. We employ a range of theoretical and computational approaches, including:

• Electronic structure calculations (DFT/TDDFT, TB, Wannierization)

• AI-driven materials modeling (MLIP-MD, ML-TB)

• Green's function (NEGF, Kubo formula, CPA/TMT)

• Device modeling and simulation (BTE, I–V characteristics)