We study the materials, processes, and device physics of advanced semiconductor technologies, including logic, memory, interconnects, and heterogeneous integration. Current research interests include 3D NAND, advanced packaging, and semiconductor devices for future computing systems. 

Papers:

• Advanced packaging and interconnect materials (ACS AMI 2026, Chem. Mater. 2026, CAP 2026, EML 2026, JMCC 2026, Nano 2024, JMCC 2022)

• Topological materials and low-power devices (Nanoscale 2026, Nano Lett. 2026, ACS AELM 2025, ACS Nano 2025, TED 2024, PRB 2023)

• Atomic layer deposition (ALD) (JVSTA 2024, JPCA 2021, Sci. Rep. 2021, PCCP 2020)

We study the materials physics underlying solid-state quantum technologies, with a focus on superconducting qubits and quantum defects. Our research aims to understand defect-related phenomena in quantum devices, including two-level systems (TLSs) in superconducting qubits and defect-based single-photon emitters (SPEs).

Papers:

• Superconducting qubits (PRM 2019)

• Quantum defects (Nano Lett. 2026, Nat. Commun. 2022, PRB 2022)

• Quantum simulations (JKPS 2023)

We study localization, electron transport, and electron–phonon interactions in disordered electronic systems, including amorphous materials. Our research focuses on how structural disorder and lattice vibrations govern charge transport and localization phenomena in disordered solids. 

Papers:

• Disordered semiconductors (ACS AMI 2023, PRB 2022)

• Electron–phonon interactions (JPCM 2026, JAP 2019)

Our research relies on first-principles calculations and physics-based modeling. We employ a range of theoretical and computational approaches, including:

• Electronic structure calculations (DFT, TB, Wannierization)

• AI-driven materials modeling (MLIP-MD, ML-EPM)

• Green's function methods (NEGF, Kubo formula, CPA/TMT)

• Device modeling and simulation (BTE, I–V characteristics)