Research

We study how structural disorder and electron–phonon interaction govern electronic structure, localization, and transport in disordered solids. 

Research areas

• Electronic transport in disordered solids (JKPS 2026, ACS AMI 2023, PRB 2022)

• Electron–phonon interaction (JPCM 2026)

We investigate materials and physical mechanisms relevant to semiconductor integration and reliability.

Research areas

• Hybrid bonding and interconnects (CAP 2026, EML 2026, JMCC 2026)

• Defects, radiation, and reliability (Nano Lett. 2026, Nat. Commun. 2022, JPCA 2021, JPCC 2021, Sci. Rep. 2021, PCCP 2020)

• Topological materials and low-power devices (Nanoscale 2026, Nano Lett. 2026, ACS AELM 2025, ACS Nano 2025, TED 2024, PRM 2019)

• Electronic structure calculations (DFT, TB, Wannierization)

• Green's function (NEGF, Kubo formula, CPA/TMT)

• Atomistic and ML-assisted modeling (MD, MLIPs, ML-EPM)

• Device modeling and simulation (TCAD, BTE, mobility)