We investigate materials, interfaces, and physical mechanisms that govern semiconductor integration and reliability.
Research areas
Hybrid bonding and interconnects (CAP 2026, EML 2026, JMCC 2026)
Memory and logic (Nanoscale 2026, Nano Lett. 2026, ACS AELM 2025, ACS Nano 2025, TED 2024)
Radiation effects, defects, and reliability (Nano Lett. 2026, Nat. Commun. 2022, JPCA 2021, JPCC 2021, Sci. Rep. 2021, PCCP 2020)
We study how structural disorder and electron–phonon interaction govern electronic structure, localization, and transport in disordered solids.
Research areas
Electronic transport in disordered solids (JKPS 2026, ACS AMI 2023, PRB 2022)
Electron–phonon interaction (JPCM 2026)
Electronic structure (DFT, TB, Wannierization, ML-EPM)
Atomistic modeling (MD, MLIPs)
Green's function (Kubo formula, NEGF, CPA/TMT)
Device modeling (I–V, mobility)