We study localization, transport, and electron–phonon interactions in disordered electronic materials, including amorphous materials. By investigating the interplay between structural disorder and lattice vibrations, we uncover the microscopic mechanisms governing electronic transport in disordered solids.

Research topics:

• Disordered semiconductors (ACS AMI 2023, PRB 2022)

• Electron–phonon interactions (JPCM 2026, JAP 2019)

As device technologies move beyond conventional scaling limits, we study the fundamental physics governing logic, memory, and interconnect performance, while advancing the application of emerging materials and novel device concepts for next-generation semiconductor technologies.

Research topics:

• Interconnect materials (Chem. Mater. 2026, EML 2026, CAP 2026, JMCC 2026, Nano 2024, JMCC 2022)

• Topological materials and  devices (Nanoscale 2026, Nano Lett. 2026, TED 2024, PRB 2023)

• Negative-capacitance FETs (ACS AELM 2025, ACS Nano 2025)

• Atomic layer deposition (ALD) (JVSTA 2024, JPCA 2021, Sci. Rep. 2021, PCCP 2020)

Our research focuses on the materials physics underlying solid-state quantum technologies, with particular emphasis on quantum defects and superconducting qubits. We also explore quantum simulation of classically intractable solid-state systems.

Research topics:

• Quantum defects (Nano Lett. 2026, Nat. Commun. 2022, PRB 2022)

• Superconducting qubits (PRM 2019)

• Quantum simulations (JKPS 2023)

Our research relies on first-principles calculations and physics-based modeling. We employ a range of theoretical and computational approaches, including:

• Electronic structure calculations (DFT, TB, Wannierization)

• Green's function methods (NEGF, Kubo formula, DMFT, CPA)

• AI-driven materials modeling (MLIP, ML-EPM)

• Device modeling and simulation (BTE, I–V characteristics)