Publications

2024

• Yungyeong Park ... Yeonghun Lee*, 2D topological transistors ..., submitted.

• Jeongwoon Hwang, Dongwook Kim, Yeonghun Lee, Taesoon Hwang, Jinho Ahn, and Kyeongjae Cho*, Infrared emissivity - resistivity correlation of Ru thin films for EUV pellicle applications, Nano (2024). https://doi.org/10.1142/S1793292024500206

2023

• Jongchan Kim†, Yeonghun Lee†, Nguyen Van Long†, Chu Thi Thu Huong, Dongwook Kim, Kyeongjae Cho*, and Myung Mo Sung*, Self-organized phase-composite nanocrystal solids with superior charge transport, ACS Applied Materials & Interfaces 15(46), 53835-53846 (2023). https://doi.org/10.1021/acsami.3c12282

• Xurui Zhang, Yeonghun Lee, Vivek Kakani, Kun Yang, Kyeongjae Cho, and Xiaoyan Shi*, Two types of three-dimensional quantum Hall effects in multilayer WTe2, Physical Review B 107(24), 245410 (2023). https://doi.org/10.1103/PhysRevB.107.245410

• Yeonghun Lee*, Symmetric Trotterization in digital quantum simulation of quantum spin dynamics, Journal of the Korean Physical Society 82(5), 479-485 (2023). https://doi.org/10.1007/s40042-023-00722-z

2022

• Yeonghun Lee*, Yaoqiao Hu, Xiuyao Lang, Dongwook Kim, Kejun Li, Yuan Ping, Kai-Mei C. Fu, and Kyeongjae Cho*, Spin-defect qubits in two-dimensional transition metal dichalcogenides operating at telecom wavelengths, Nature Communications 13, 7501 (2022). https://doi.org/10.1038/s41467-022-35048-0

• Vsevolod Ivanov, Jacopo Simoni, Yeonghun Lee, Wei Liu, Kaushalya Jhuria, Walid Redjem, Yertay Zhiyenbayev, Christos Papapanos, Wayesh Qarony, Boubacar Kanté, Arun Persaud, Thomas Schenkel, and Liang Z. Tan, Effect of localization on photoluminescence and zero-field splitting of silicon color centers, Physical Review B 106(13), 134107 (2022). https://doi.org/10.1103/PhysRevB.106.134107

• Yeonghun Lee, Yaoqiao Hu, Dongwook Kim, Suman Datta, and Kyeongjae Cho*, First-principles mobility prediction for amorphous semiconductors, Physical Review B 105(8), 085201 (2022). https://doi.org/10.1103/PhysRevB.105.085201

• Yaoqiao Hu, Patrick Conlin, Yeonghun Lee, Dongwook Kim, and Kyeongjae Cho*, van der Waals 2D metallic materials for low-resistivity interconnects, Journal of Materials Chemistry C 10(14), 5627-5635(2022). https://doi.org/10.1039/D1TC05872J

2021

• Zhiyin Tu†, Ti Xie†, Yeonghun Lee, Jinling Zhou, Alemayehu S. Admasu, Yu Gong, Nagarajan Valanoor, John Cumings, Sang-Wook Cheong, Ichiro Takeuchi, Kyeongjae Cho, and Cheng Gong*, Ambient effect on the Curie temperatures and magnetic domains in metallic two-dimensional magnets, npj 2D Materials and Applications 5, 62 (2021). https://doi.org/10.1038/s41699-021-00242-z

• Xiaolong Yao†, Yeonghun Lee†, Davide Ceresoli, and Kyeongjae Cho*, First-principles study on electron-induced excitations of ALD precursors: Inelastic electron wave-packet scattering with cobalt tricarbonyl nitrosyl Co(CO)3NO using time-dependent density functional theory, The Journal of Physical Chemistry A 125(21), 4524-4533 (2021). https://doi.org/10.1021/acs.jpca.0c11309

• Yeonghun Lee, Hyungjun Kim, Ki-Ha Hong*, and Kyeongjae Cho*, Femtosecond quantum dynamics of excited-state evolution of halide perovskites: Quantum chaos of molecular cations, The Journal of Physical Chemistry C 125(19), 10676-10684 (2021). https://doi.org/10.1021/acs.jpcc.1c01439

• Yeonghun Lee, Grigory Kolesov, Xiaolong Yao, Efthimios Kaxiras, and Kyeongjae Cho*, Nonadiabatic dynamics of cobalt tricarbonyl nitrosyl for ligand dissociation induced by electronic excitation, Scientific Reports 11, 8997 (2021). https://doi.org/10.1038/s41598-021-88243-2

• Jiyoung Moon, Sunah Kwon, Masoud Alahbakhshi, Yeonghun Lee, Kyeongjae Cho, Anvar Zakhidov, Moon J. Kim, and Qing Gu*, Surface-energy-driven preferential grain growth of metal halide perovskites: Effects of nanoimprint lithography beyond direct patterning, ACS Applied Materials & Interfaces 13(4), 5368-5378 (2021). https://doi.org/10.1021/acsami.0c17655

2020

• Yeonghun Lee, Xiaolong Yao, Massimo V. Fischetti, and Kyeongjae Cho*, Real-time ab initio simulation of inelastic electron scattering using the exact, density functional, and alternative approaches, Physical Chemistry Chemical Physics 22(16), 8616-8624 (2020). https://doi.org/10.1039/C9CP06376E

2019

• Yaoqiao Hu, Jeongwoon Hwang, Yeonghun Lee, Patrick Conlin, Darrell G. Schlom, Suman Datta, and Kyeongjae Cho*, First principles calculations of intrinsic mobilities in tin-based oxide semiconductors SnO, SnO2, and Ta2SnO6, Journal of Applied Physics 126(18), 185701 (2019). https://doi.org/10.1063/1.5109265

• Yeonghun Lee, Jeongwoon Hwang, Fan Zhang, and Kyeongjae Cho*, First-principles study of metal-graphene edge contact for ballistic Josephson junction, Physical Review Materials 3(6), 064801 (2019). https://doi.org/10.1103/PhysRevMaterials.3.064801

2015

• Yeonghun Lee, Kuniyuki Kakushima, Kenji Natori, and Hiroshi Iwai, Modeling of quasi-ballistic transport in nanowire metal-oxide-semiconductor field-effect transistors, Journal of Applied Physics 118(15), 155105 (2015). https://doi.org/10.1063/1.4933287

2012

• Takamasa Kawanago*, Yeonghun Lee, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, and Hiroshi Iwai, Experimental study of electron mobility characterization in direct contact La-silicate/Si structure based nMOSFETs, Solid-State Electronics 74, 2-6 (2012). https://doi.org/10.1016/j.sse.2012.04.003

• Yeonghun Lee*, Kuniyuki Kakushima, Kenji Natori, and Hiroshi Iwai, Gate capacitance modeling and diameter-dependent performance of nanowire MOSFETs, IEEE Transactions on Electron Devices 59(4), 1037-1045 (2012). https://doi.org/10.1109/TED.2012.2185701

• Takamasa Kawanago*, Yeonghun Lee, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, and Hiroshi Iwai, EOT of 0.62nm and high electron mobility in La-silicate/Si structure based nMOSFETs achieved by utilizing metal inserted poly-Si stacks and annealing at high temperature, IEEE Transactions on Electron Devices 59(2), 269-276 (2012). https://doi.org/10.1109/TED.2011.2174442

• Takamasa Kawanago*, Takuya Suzuki, Yeonghun Lee, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, and Hiroshi Iwai, Compensation of oxygen defects in La-silicate gate dielectrics for improving effective mobility in high-k/metal gate MOSFET using oxygen annealing process, Solid-State Electronics 68, 68-72 (2012). https://doi.org/10.1016/j.sse.2011.10.006

2011

• Yeonghun Lee*, Kuniyuki Kakushima, Kenji Natori, and Hiroshi Iwai, Corner effects on phonon-limited mobility in rectangular silicon nanowire metal-oxide-semiconductor field-effect transistors based on spatially resolved mobility analysis, Journal of Applied Physics 109(11), 113712 (2011). https://doi.org/10.1063/1.3592252

2010

• Yeonghun Lee*, Kuniyuki Kakushima, Kenji Shiraishi, Kenji Natori, and Hiroshi Iwai, Trade-off between density of states and gate capacitance in size-dependent injection velocity of ballistic n-channel silicon nanowire transistors, Applied Physics Letters 97(3), 032101 (2010). https://doi.org/10.1063/1.3464320

• Yeonghun Lee*, Kuniyuki Kakushima, Kenji Shiraishi, Kenji Natori, and Hiroshi Iwai, Size-dependent properties of ballistic silicon nanowire field effect transistors, Journal of Applied Physics 107(11), 113705 (2010). https://doi.org/10.1063/1.3388324

• Kenji Ohmori*, Wei Feng, Ranga Hettiarachchi, Yeonghun Lee, Soshi Sato, Kuniyuki Kakushima, Motoyuki Sato, Kenji Fukuda, Masaaki Niwa, Kikuo Yamabe, Kenji Shiraishi, Hiroshi Iwai, and Keisaku Yamada, Reduction of low-frequency noise in Si MOSFETs by using nanowire channel, in Proceedings of the IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) (IEEE, Xian, China, 2012), pp. 1-4. https://doi.org/10.1109/ICSICT.2012.6467928

• Kenji Ohmori*, Wei Feng, Ranga Hettiarachchi, Yeonghun Lee, Soshi Sato, Kuniyuki Kakushima, Motoyuki Sato, Kenji Fukuda, Masaaki Niwa, Kikuo Yamabe, Kenji Shiraishi, Hiroshi Iwai, and Keisaku Yamada, (Invited) Low-frequency noise reduction in Si nanowire MOSFETs, ECS Transactions 45 (3), 437-442 (2012). https://doi.org/10.1149/1.3700909

• Wei Feng, Ranga Hettiarachchi, Yeonghun Lee, Soshi Sato, Kuniyuki Kakushima, Motoyuki Sato, Kenji Fukuda, Masaaki Niwa, Kikuo Yamabe, Kenji Shiraishi, Hiroshi Iwai, and Kenji Ohmori*, Fundamental origin of excellent low-noise property in 3D Si-MOSFETs ~ Impact of charge-centroid in the channel due to quantum effect on 1/f noise ~, in Technical Digest of the IEEE International Electron Devices Meeting (IEDM) (IEEE, Washington, DC, USA, 2011), pp. 27.7.1-27.7.4. https://doi.org/10.1109/IEDM.2011.6131627

• Takamasa Kawanago*, Yeonghun Lee, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, and Hiroshi Iwai, Metal inserted poly-Si with high temperature annealing for achieving EOT of 0.62nm in La-silicate MOSFET, in Proceedings of the European Solid-State Device Research Conference (ESSDERC) (IEEE, Helsinki, Finland, 2011), pp. 67-70. https://doi.org/10.1109/ESSDERC.2011.6044233

• Yeonghun Lee, Kuniyuki Kakushima, Kenji Natori, and Hiroshi Iwai, Cross-sectional distribution of phonon-limited electron mobility in rectangular silicon nanowire field effect transistors, in Extended Abstracts of the International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (IWDTF) (The Japan Society of Applied Physics, Tokyo, Japan, 2011), pp. 119-120.

• Soshi Sato, Yeonghun Lee, Kuniyuki Kakushima, Parhat Ahmet, Kenji Ohmori, Kenji Natori, Keisaku Yamada, and Hiroshi Iwai, Gate semi-around Si nanowire FET fabricated by conventional CMOS process with very high drivability, in Proceedings of the European Solid-State Device Research Conference (ESSDERC) (IEEE, Sevilla, Spain, 2010), pp. 361-364. https://doi.org/10.1109/ESSDERC.2010.5618212

• Takamasa Kawanago*, Yeonghun Lee, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, and Hiroshi Iwai, Optimized oxygen annealing process for Vth tuning of p-MOSFET with high-k/metal gate stacks, in Proceedings of the European Solid-State Device Research Conference (ESSDERC) (IEEE, Sevilla, Spain, 2010), pp. 301-304. https://doi.org/10.1109/ESSDERC.2010.5618352

• Yeonghun Lee*, Kuniyuki Kakushima, Kenji Shiraishi, and Hiroshi Iwai, Systematic study on size dependences of transport parameters for ballistic nanowire-FET with effective mass approximation, in Extended Abstracts of the International Conference on Solid State Devices and Materials (SSDM) (The Japan Society of Applied Physics, Sendai, Japan, 2009), pp. 1114-1115. https://doi.org/10.7567/SSDM.2009.E-7-5

• Yeonghun Lee, Takahiro Nagata, Kuniyuki Kakushima, Kenji Shiraishi, and Hiroshi Iwai, Electronic structure analysis of silicon nanowires for high conductivity in n- and p-channel nanowire-FET, ECS Transactions 16 (40), 1-5 (2009). https://doi.org/10.1149/1.3108347

• Yeonghun Lee, Takahiro Nagata, Kuniyuki Kakushima, Kenji Shiraishi, and Hiroshi Iwai, A study on electronic structure of silicon nanowires with diverse diameters and orientations for high performance FET, in Extended Abstracts of the International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology (IWDTF) (The Japan Society of Applied Physics, Tokyo, Japan, 2008), pp. 83-84.

• Yeonghun Lee, Semiconductor memory device and operating method thereof, US10083758B2, Sept. 25, 2018.

• Yeonghun Lee, Two part programming and erase methods for non-volatile charge trap memory devices, US10032518B2, July 24, 2018.

• Yeonghun Lee, Three-dimensional semiconductor device and manufacturing method thereof, US9818758B2, Nov. 14, 2017.

• Yeonghun Lee, Page buffer and semiconductor memory device including the same, US9792966B2, Oct. 17, 2017.

• Yeonghun Lee, Semiconductor memory device having dummy word lines and operating method thereof, US9741408B2, Aug. 22, 2017.

• Yeonghun Lee, Storage device and operating method thereof, US9728265B2, Aug. 8, 2017.

• Yeonghun Lee, Two part programming and erase methods for non-volatile charge trap memory devices, US9679639B2, June 13, 2017.

• Yeonghun Lee, Semiconductor memory device tunnel insulating layers included in the plurality memory cells having different thicknesses according to distances of the plurality of memory cells from the X-decoder, US9646698B2, May 9, 2017.

• Yeonghun Lee, Semiconductor deivce and operating method thereof, US9558835B2, Jan. 31, 2017.

• Yeonghun Lee, Hyun Heo, Min Gyu Koo, and Dong Hwan Lee, Semiconductor apparatus having transfer circuit transferring high voltage, US9467050B2, Oct. 11, 2016.

• Yeonghun Lee and Dong Hwan Lee, Operating characteristics of a semiconductor device, US9455009B2, Sept. 27, 2016.

• Yeonghun Lee, Semiconductor device being capable of improving the breakdown characteristics, US9323231B2, Apr. 26, 2016.

• Yeonghun Lee, Hyun Heo, Min Gyu Koo, and Dong Hwan Lee, 3-dimensional semiconductor device having memory cells stacked over substrate, US9299447B2, Mar. 29, 2016.