DRIVER 1 (DR1)
High current (4.5A), high speed MOSFET driver.
DRIVER 1 (DR1)
High current (4.5A), high speed MOSFET driver.
An isolated, high or low side MOSFET driver that can charge / discharge a high capacitance MOSFET gate at high frequency (>500kHz) with the capability of continuous on operation via an independent isolated supply.
Selection of Gate Resistors & PWM input voltage
Rear side and isolated power supply.
Driver IC: UCC23513: 4.5-A source / 5.3-A sink, peak output current. 14V to 33V output driver supply voltage. Under Voltage Lockout VCC rising 12.5 Typical, falling 11.5V typical.
Gate resistance: Selection through solder tabs: The lower the gate resistance, the faster the switching, cooler operation but greater noise.
Isolate power supply: 12V input use a B1215S which has an output of 15V to the gate driver. Or with an input of 15V, use a B1515S for the required isolated output of 15V to the gate driver IC.
Capacitance: For high frequency and fast gate charge sufficient capacitance is required. Additionally, extra capacitance is to enable easy placement (e.g. not necessarily being immediately beside the power supply). The capacitance design was replicated for the output of the isolated supply as the application voltage and current is identical.
4 * 10uf 50V ceramic, 1 * 100nF 50V, 10nF 50V.
PWM Signal: The input PWM signal can be either 5V or 3V3 using the selector solder tabs. The LED resistance has been calculated for ~10mA optimal current. Selecting 5V for a 3V3 supply may work and reduce power from a microcontrollers output pins.