Sunhyuk Kim, Nahyeon Kim, Yaeyeon Ko, Doohyeok Lim*, "Universal Logic-In-Memory Gates using Reconfigurable Silicon Transistors", Micromachines, vol. 16, no. 12, pp. 1348, 2025.
Hakin Kim, Doohyeok Lim*, "Bulk Feedback Field-Effect Transistor", IEEE Electron Device Letters, vol. 46, no. 9, pp.1457-1460, 2025.
Doohyeok Lim*, "Fabrication and characterization of silicon field-effect diodes with forward-bias leakage path suppression in bulk silicon substrates", Physica Scripta, vol. 100, no. 7, pp. 055927, 2025.
Daon Kim, Doohyeok Lim*, "Logic and static memory functions of an inverter comprising a feedback field effect transistor", Nanotechnology, vol. 36, no. 17, pp. 175201, 2025.
Yuna Suh, Doohyeok Lim*, "Doping- and capacitor-less 1T-DRAM cell using reconfigurable feedback mechanism", Nanotechnology, vol. 36, no. 6, pp. 065203, 2025.
Hakin Kim, Doohyeok Lim*, "Doping-less feedback field-effect transistors", Micromachines, vol. 15, no. 3, pp. 316, 2024.
Yoocheon Lee, Doohyeok Lim*, "Reconfigurable feedback field-effect transistors with a single gate", Nanomaterials, vol. 13, no. 24, pp. 3133, 2023.
Eunseong Kim, Doohyeok Lim*, "Temperature-dependent electrical characteristics of silicon biristor", Micromachines, vol. 14, no. 12, pp. 2165, 2023.
Doohyeok Lim*, "Single silicon synaptic device for stochastic binary spike-timing-dependent plasticity", Semiconductor Science and Technology, vol. 38, no. 7, pp. 075015, 2023.
Doohyeok Lim, Kyoungah Cho, Sangsig Kim, "Reconfigurable logic-in-memory using silicon transistors", Advanced Materials Technologies, vol. 7, no. 10, pp. 2101504, 2022.
Taekham Kim, Doohyeok Lim, Jaemin Son, Kyoungah Cho and Sangsig Kim, "Reconfiguration of operation modes in silicon nanowire field-effect transistors by electrostatic virtual doping", Nanotechnology, vol. 33, pp. 415203, 2022.
Changmin Lee, Won-Yong Lee, Hyeon Joong Kim, Jin-Hyuk Bae, In-Man Kang, Doohyeok Lim, Kwangeun Kim, Jaewon Jang, "Extremely bias stress stable enhancement mode sol–gel-processed SnO2 thin-film transistors with Y2O3 passivation layers", Applied Surface Science, vol. 559, pp.149971, 2021.
Doohyeok Lim, Kyoungah Cho, Sangsig Kim, "Single silicon neuron device enabling neuronal oscillation and stochastic dynamics", IEEE Electron Device Letters, vol. 42, no. 5, pp.649-652, 2021.
Juhee Jeon, Young-Soo Park, Sola Woo, Doohyeok Lim, Jaemin Son, Sangsig Kim, "Effect of Ge mole fraction on performance of underlapped gate-all-around SiGe-source tunneling field-effect transistors", Journal of Nanoscience and Nanotechnology, vol. 21, no. 8, pp.4310-4314, 2021.
Jaemin Son, Doohyeok Lim, Sangsig Kim, "Steep switching characteristics of partially gated p+-n+-i-n+ silicon-nanowire transistors.", Journal of Nanoscience and Nanotechnology, vol. 21, no. 8, pp.4330-4335, 2021.
Young-Soo Park, Doohyeok Lim, Jaemin Son, Juhee Jeon, Kyoungah Cho, Sangsig Kim, "Inverting logic-in-memory cells comprising silicon nanowire feedback field-effect transistors", Nanotechnology, vol. 32, no. 8, pp. 225202, 2021.
Young-Soo Park, Sola Woo, Doohyeok Lim, Kyuongah Cho, Sangsig Kim, "Integrate-and-fire neuron circuit without external bias voltages", Frontiers in Neuroscience, vol.15, pp. 309, 2021.
Doohyeok Lim, Jaemin Son, Kyoungah Cho, Sangsig Kim, "Quasi‐nonvolatile silicon memory device", Advanced Materials Technologies, vol. 5, no. 12, pp. 2000915, 2020.
Sola Woo, Jinsun Cho, Doohyeok Lim, Young-Soo Park, Kyoungah Cho, Sangsig Kim, "Implementation and characterization of an integrate-and-fire neuron circuit using a silicon nanowire feedback field-effect transistor", IEEE Transactions on Electron Devices, vol. 67, no. 7, pp. 2995-3000, 2020.
Doohyeok Lim, Sangsig Kim, "Optically tunable feedback operation of silicon nanowire transistors", Semiconductor Science and Technology, vol. 34, no. 11, pp. 115014, 2019.
Doohyeok Lim, Sangsig Kim, "Polarity control of carrier injection for nanowire feedback field-effect transistors", Nano Research, vol. 12, no. 10, pp. 2509-2514, 2019.
Sola Woo, Jinsun Cho, Doohyeok Lim, Kyoungah Cho, Sangsig Kim, "Transposable 3T-SRAM synaptic array using independent double-gate feedback field-effect transistors", IEEE Transactions on Electron Devices, vol. 66, no. 11, pp. 4753-4758, 2019.
Hyungu Kang, Jinsun Cho, Yoonjoong Kim, Doohyeok Lim, Sola Woo, Kyoungah Cho, Sangsig Kim, "Nonvolatile and volatile memory characteristics of a silicon nanowire feedback field-effect transistor with a nitride charge-storage layer", IEEE Transactions on Electron Devices, vol. 66, no. 8, pp. 3342-3348, 2019.
Jinsun Cho, Doohyeok Lim, Sola Woo, Kyoungah Cho, Sangsig Kim, "Static random access memory characteristics of single-gated feedback field-effect transistors", IEEE Transactions on Electron Devices, vol. 66, no. 1, pp. 413-419, 2018.
Yoonjoong Kim, Jinsun Cho, Doohyeok Lim, Sola Woo, Kyoungah Cho, Sangsig Kim, "Switchable‐memory operation of silicon nanowire transistor", Advanced Electronic Materials, vol. 4, no. 12, pp. 1800429, 2018.
Yoonjoong Kim, Doohyeok Lim, Kyoungah Cho, Sangsig Kim, "Feedback and tunneling operations of a p+-in+ silicon nanowire field-effect transistor", Nanotechnology, vol. 29, no. 43, 435202, 2018.
Jungje Moon, Yoonjoong Kim, Doohyeok Lim, Sangsig Kim, "Silicon nanowire CMOS NOR logic gates featuring one-volt operation on bendable substrates", Nano Research, vol. 11, no. 5, pp. 2625-2631, 2018.
Jungje Moon, Yoonjoong Kim, Doohyeok Lim, Kyeungmin Im, Sangsig Kim, "Silicon nanowire ratioed inverters on bendable substrates", Nano Research, vol. 11, no. 5, pp. 2586-2591, 2018.
Doohyeok Lim, Minsuk Kim, Yoonjoong Kim, Jinsun Cho, Sangsig Kim, "Nondestructive readout memory characteristics of silicon nanowire biristors", IEEE Transactions on Electron Devices, vol. 65, no. 4, pp. 1578-1582, 2018.
Jeuk Yoo, Yoonjoong Kim, Doohyeok Lim, Sangsig Kim, "Electrical characteristics of silicon nanowire CMOS inverters under illumination", Optics express, vol. 26, no. 3, pp. 3527-3534, 2018
Minsuk Kim, Yoonjoong Kim, Doohyeok Lim, Sola Woo, Kyeungmin Im, Jinsun Cho, Hyungu Kang, Sangsig Kim, "Impact ionization and tunneling operations in charge-plasma dopingless device", Superlattices and Microstructures, vol. 111, pp. 796-805, 2017.
Doohyeok Lim, Minsuk Kim, Yoonjoong Kim, Sangsig Kim, "Memory characteristics of silicon nanowire transistors generated by weak impact ionization", Scientific reports, vol. 7, no. 1, pp. 1-10, 2017.
Minsuk Kim, Yoonjoong Kim, Doohyeok Lim, Sola Woo, Kyoungah Cho, Sangsig Kim, "Steep switching characteristics of single-gated feedback field-effect transistors", Nanotechnology, vol. 28, no. 5, pp. 055205, 2016.
Junggwon Yun, Myeongwon Lee, Youngin Jeon, Minsuk Kim, Yoonjoong Kim, Doohyeok Lim, Sangsig Kim, "Nanowatt power operation of silicon nanowire NAND logic gates on bendable substrates", Nano Research, vol. 9, no. 12, pp. 3656-3662, 2016.
Yoonjoong Kim, Youngin Jeon, Doohyeok Lim, Sangsig Kim, "Fatigue behaviors of silicon nanowire field-effect transistors on bendable substrate", Journal of Nanoscience and Nanotechnology, vol. 16, no. 12, pp. 12823-12826, 2016.
Doohyeok Lim, Youngin Jeon, Minsuk Kim, Yoonjoong Kim, Sangsig Kim, "Electrical characteristics of SnO2 thin-film transistors fabricated on bendable substrates using reactive magnetron sputtering", Journal of Nanoscience and Nanotechnology, vol. 16, no. 11, pp. 11697-11700, 2016.
Youngin Jeon, Minsuk Kim, Doohyeok Lim, Sangsig Kim, "Steep subthreshold swing n- and p-channel operation of bendable feedback field-effect transistors with p+–i–n+ nanowires by dual-top-gate voltage modulation, Nano letters, vol. 15, no. 8, pp. 4905-4913, 2015.