Publications

Journal papers

1. Hakin Kim, Doohyeok Lim*, "Doping-less feedback field-effect transistors", Micromachines, vol. 15 , no. 3, pp. 316, 2024.

2. Yoocheon Lee, Doohyeok Lim*, "Reconfigurable feedback field-effect transistors with a single gate", Nanomaterials, vol. 13 , no. 24, pp. 3133, 2023.

3. Eunseong Kim, Doohyeok Lim*, "Temperature-dependent electrical characteristics of silicon biristor", Micromachines, vol. 14 , no. 12, pp. 2165, 2023.

4. Doohyeok Lim*, "Single silicon synaptic device for stochastic binary spike-timing-dependent plasticity", Semiconductor Science and Technology, vol. 38 , no. 7, pp. 075015, 2023.

5. Doohyeok Lim, Kyoungah Cho, Sangsig Kim, "Reconfigurable logic-in-memory using silicon transistors", Advanced Materials Technologies, vol. 7, no. 10, pp. 2101504, 2022.

6. Taekham Kim, Doohyeok Lim, Jaemin Son, Kyoungah Cho and Sangsig Kim, "Reconfiguration of operation modes in silicon nanowire field-effect transistors by electrostatic virtual doping", Nanotechnology, vol. 33, pp. 415203, 2022.

7. Changmin Lee, Won-Yong Lee, Hyeon Joong Kim, Jin-Hyuk Bae, In-Man Kang, Doohyeok Lim, Kwangeun Kim, Jaewon Jang, "Extremely bias stress stable enhancement mode sol–gel-processed SnO2 thin-film transistors with Y2O3 passivation layers", Applied Surface Science, vol. 559, pp.149971, 2021.

8. Doohyeok Lim, Kyoungah Cho, Sangsig Kim, "Single silicon neuron device enabling neuronal oscillation and stochastic dynamics", IEEE Electron Device Letters, vol. 42, no. 5, pp.649-652, 2021.

9. Juhee Jeon, Young-Soo Park, Sola Woo, Doohyeok Lim, Jaemin Son, Sangsig Kim, "Effect of Ge mole fraction on performance of underlapped gate-all-around SiGe-source tunneling field-effect transistors", Journal of Nanoscience and Nanotechnology, vol. 21, no. 8, pp.4310-4314, 2021.

10. Jaemin Son, Doohyeok Lim, Sangsig Kim, "Steep switching characteristics of partially gated p+-n+-i-n+ silicon-nanowire transistors.", Journal of Nanoscience and Nanotechnology, vol. 21, no. 8, pp.4330-4335, 2021.

11. Young-Soo Park, Doohyeok Lim, Jaemin Son, Juhee Jeon, Kyoungah Cho, Sangsig Kim, "Inverting logic-in-memory cells comprising silicon nanowire feedback field-effect transistors", Nanotechnology, vol. 32, no. 8, pp. 225202, 2021.

12. Young-Soo Park, Sola Woo, Doohyeok Lim, Kyuongah Cho, Sangsig Kim, "Integrate-and-fire neuron circuit without external bias voltages", Frontiers in Neuroscience, vol.15, pp. 309, 2021.

13. Doohyeok Lim, Jaemin Son, Kyoungah Cho, Sangsig Kim, "Quasi‐nonvolatile silicon memory device", Advanced Materials Technologies, vol. 5, no. 12, pp. 2000915, 2020.

14. Sola Woo, Jinsun Cho, Doohyeok Lim, Young-Soo Park, Kyoungah Cho, Sangsig Kim, "Implementation and characterization of an integrate-and-fire neuron circuit using a silicon nanowire feedback field-effect transistor", IEEE Transactions on Electron Devices, vol. 67, no. 7, pp. 2995-3000, 2020.

15. Doohyeok Lim, Sangsig Kim, "Optically tunable feedback operation of silicon nanowire transistors", Semiconductor Science and Technology, vol. 34 , no. 11, pp. 115014, 2019.

16. Doohyeok Lim, Sangsig Kim, "Polarity control of carrier injection for nanowire feedback field-effect transistors", Nano Research, vol. 12, no. 10, pp. 2509-2514, 2019.

17. Sola Woo, Jinsun Cho, Doohyeok Lim, Kyoungah Cho, Sangsig Kim, "Transposable 3T-SRAM synaptic array using independent double-gate feedback field-effect transistors", IEEE Transactions on Electron Devices, vol. 66, no. 11, pp. 4753-4758, 2019.

18. Hyungu Kang, Jinsun Cho, Yoonjoong Kim, Doohyeok Lim, Sola Woo, Kyoungah Cho, Sangsig Kim, "Nonvolatile and volatile memory characteristics of a silicon nanowire feedback field-effect transistor with a nitride charge-storage layer", IEEE Transactions on Electron Devices, vol. 66, no. 8, pp. 3342-3348, 2019.

19. Jinsun Cho, Doohyeok Lim, Sola Woo, Kyoungah Cho, Sangsig Kim, "Static random access memory characteristics of single-gated feedback field-effect transistors", IEEE Transactions on Electron Devices, vol. 66, no. 1, pp. 413-419, 2018.

20. Yoonjoong Kim, Jinsun Cho, Doohyeok Lim, Sola Woo, Kyoungah Cho, Sangsig Kim, "Switchable‐memory operation of silicon nanowire transistor", Advanced Electronic Materials, vol. 4, no. 12, pp. 1800429, 2018.

21. Yoonjoong Kim, Doohyeok Lim, Kyoungah Cho, Sangsig Kim, "Feedback and tunneling operations of a p+-in+ silicon nanowire field-effect transistor", Nanotechnology, vol. 29, no. 43, 435202, 2018.

22. Jungje Moon, Yoonjoong Kim, Doohyeok Lim, Sangsig Kim, "Silicon nanowire CMOS NOR logic gates featuring one-volt operation on bendable substrates", Nano Research, vol. 11, no. 5, pp. 2625-2631, 2018.

23. Jungje Moon, Yoonjoong Kim, Doohyeok Lim, Kyeungmin Im, Sangsig Kim, "Silicon nanowire ratioed inverters on bendable substrates", Nano Research, vol. 11, no. 5, pp. 2586-2591, 2018.

24. Doohyeok Lim, Minsuk Kim, Yoonjoong Kim, Jinsun Cho, Sangsig Kim, "Nondestructive readout memory characteristics of silicon nanowire biristors", IEEE Transactions on Electron Devices, vol. 65, no. 4, pp. 1578-1582, 2018.

25. Jeuk Yoo, Yoonjoong Kim, Doohyeok Lim, Sangsig Kim, "Electrical characteristics of silicon nanowire CMOS inverters under illumination", Optics express, vol. 26, no. 3, pp. 3527-3534, 2018

26. Minsuk Kim, Yoonjoong Kim, Doohyeok Lim, Sola Woo, Kyeungmin Im, Jinsun Cho, Hyungu Kang, Sangsig Kim, "Impact ionization and tunneling operations in charge-plasma dopingless device", Superlattices and Microstructures, vol. 111, pp. 796-805, 2017.

27. Doohyeok Lim, Minsuk Kim, Yoonjoong Kim, Sangsig Kim, "Memory characteristics of silicon nanowire transistors generated by weak impact ionization", Scientific reports, vol. 7, no. 1, pp. 1-10, 2017.

28. Minsuk Kim, Yoonjoong Kim, Doohyeok Lim, Sola Woo, Kyoungah Cho, Sangsig Kim, "Steep switching characteristics of single-gated feedback field-effect transistors", Nanotechnology, vol. 28, no. 5, pp. 055205, 2016.

29. Junggwon Yun, Myeongwon Lee, Youngin Jeon, Minsuk Kim, Yoonjoong Kim, Doohyeok Lim, Sangsig Kim, "Nanowatt power operation of silicon nanowire NAND logic gates on bendable substrates", Nano Research, vol. 9, no. 12, pp. 3656-3662, 2016.

30. Yoonjoong Kim, Youngin Jeon, Doohyeok Lim, Sangsig Kim, "Fatigue behaviors of silicon nanowire field-effect transistors on bendable substrate", Journal of Nanoscience and Nanotechnology, vol. 16, no. 12, pp. 12823-12826, 2016.

31. Doohyeok Lim, Youngin Jeon, Minsuk Kim, Yoonjoong Kim, Sangsig Kim, "Electrical characteristics of SnO2 thin-film transistors fabricated on bendable substrates using reactive magnetron sputtering", Journal of Nanoscience and Nanotechnology, vol. 16, no. 11, pp. 11697-11700, 2016.

32. Youngin Jeon, Minsuk Kim, Doohyeok Lim, Sangsig Kim, "Steep subthreshold swing n- and p-channel operation of bendable feedback field-effect transistors with p+–i–n+ nanowires by dual-top-gate voltage modulation, Nano letters, vol. 15, no. 8, pp. 4905-4913, 2015.

Conferences

1. Doohyeok Lim and Sangsig Kim, “Suppression of gate-induced drain leakage in single-gate feedback field effect transistors”, Materials Research Society (MRS) Spring Meeting, Phoenix, AZ, USA, 2019.

2. Doohyeok and Sangsig Kim, “Electrical characteristics of silicon nanowire biristor devices”, Institute of Korean Electrical and Electronics Engineers (IKEEE) annual summer conference, Seoul, Korea, 2018.

3. Doohyeok Lim, Yoonjoong Kim, and Sangsig Kim, “Steep slope subthreshold characteristics of dual-gate feedback field-effect transistors”, European Materials Research Society (E-MRS) Spring Meeting, Strasbourg, France, 2018.

4. Doohyeok Lim and Sangsig Kim, “Electrical characteristics of silicon nanowire field effect diode”, The 25th Korean Conference on Semiconductors, Gangwon-do, Korea, 2018.

5. Doohyeok Lim, Minsuk Kim, Yoonjoong Kim, and Sangsig Kim, “Bendable silicon nanowire bistable resistor for capacitor-less 1T-DRAM”, NANO KOREA, Gyeonggi-do, Korea, 2017.

6. Doohyeok Lim, Minsuk Kim, Yoonjoong Kim, and Sangsig Kim, “Silicon nanowire transistors based on weak impact ionization”, Materials Research Society (MRS) Fall Meeting and Exhibit, Boston, MA, USA, 2016.

7. Doohyeok Lim, Minsuk Kim, Yoonjoong Kim, and Sangsig Kim, “BJT mode operation in silicon nanowire transistors on bendable substrates for future capacitor-less transistor DRAM”, NANO KOREA, Gyeonggi-do, Korea, 2016.

8. Doohyeok Lim, Yoonjoong Kim, and Sangsig Kim, “Electrical characteristics of bendable SnO2 TFT fabricated using RF sputtering”, Institute of Korean Electrical and Electronics Engineers (IKEEE) annual summer conference, Incheon, Korea, 2016.

9. Doohyeok Lim, Youngin Jeon, Minsuk Kim, Yoonjoong Kim, and Sangsig Kim, “Effect of performance on tin oxide thin-film transistors under various oxygen partial pressure via radio-frequency sputtering”, The 3rd International Conference on Advanced Electromaterials, Jeju, Korea, 2015.

10. Doohyeok Lim, Youngin Jeon, Minsuk Kim, Yoonjoong Kim, and Sangsig Kim, “Annealing effect of p-type characteristics in Li-doped ZnO thin films”, The Korean Institute of Electrical and Electronic Material Engineers (KIEEME) Annual Summer Conference, Gangwon-do, Korea, 2015.

Patents

1. S. Kim, K. Cho, and D. Lim, “Reconfigurable logic-in-memory device using silicon transistor”
   Korea – Application No. 10-2021-0102728 (04/08/2021)
   US – Application No. 17/412,485 (26/08/2021)
   Taiwan – Application No. 110131836 (27/08/2021)

2. Sangsig Kim, Kyoungah Cho, and Doohyeok Lim, “Spike pulse generation circuit comprising single silicon device”
   Korea – Registration No. 10-2321676 (29/10/2021)
   US – Registration No. 11,444,606 (13/09/2022)
   China – Application No. 202110186225.0 (08/02/2021)

3. Sangsig Kim, Kyoungah Cho, Youngsoo Park, Sola Woo, and Doohyeok Lim, “Free-biased neuron devices and circuits using p-n-p-n diode”
   Korea – Registration No. 10-2425488 (21/07/2021)
   US – Application No. 16/896,560 (09/06/2020)
   China – Application No. 202010583711.1 (23/06/2020)

4. Sangsig Kim, Kyoungah Cho, Sola Woo, Doohyeok Lim, Youngsoo Park, and Jinsun Cho, “Integrate-and-fire neuron circuit using single-gated feedback field-effect transistor”
   Korea – Application No. 10-2019-0103264 (22/08/2019)
   US – Application No. 16/686,406 (18/11/2019)
   China – Application No. 201911132679.9 (19/11/2019)

5. Sangsig Kim, Kyoungah Cho, Minsuk Kim, Yoonjoong Kim, Sola Woo, and Doohyeok Lim, “Logic semiconductor device”
   Korea – Registration No. 10-1857873 (08/05/2018)
   US – Registration No. 10,483,284 (19/11/2019)

6. Sangsig Kim, Kyoungah Cho, Hyungu Kang, Jinsun Cho, Doohyeok Lim, Yoonjoong Kim, and Sola Woo, “Feedback field-effect array device capable of converting between volatile and non-volatile operations and array circuit using the same”
   Korea – Registration No. 10-2118440 (25/05/2020)
   US – Registration No. 10,643,699 (05/05/2020)
   China – Application No. 201811307944.8 (05/11/2018)

7. Sangsig Kim, Kyoungah Cho, Jinsun Cho, Doohyeok Lim, and Sola Woo, “Feedback field-effect electronic device using feedback loop operation and array circuit using feedback field-effect electronic device”
   Korea – Registration No. 10-2132196 (03/07/2020)
   US – Registration No. 10,930,334 (23/02/2021)
   China – Application No. 201811306760.X (05/11/2018)

8. Sangsig Kim, Kyoungah Cho, Jinsun Cho, Doohyeok Lim, and Sola Woo, “Transposable feedback field-effect electronic device and array circuit using the same”
   Korea – Registration No. 10-2128718 (25/06/2020)
   US – Registration No. 10,643,690 (05/05/2020)
   China – Application No. 201811315731.X (06/11/2018)

9. Sangsig Kim, Kyoungah Cho, Minsuik Kim, Yoonjoong Kim, Sola Woo, and Doohyeok Lim, “Semiconductor device”
   Korea – Registration No. 10-1835231 (27/02/2018)
   US – Registration No. 10,515,982 (24/12/2019)

10. Sangsig Kim, Youngin Jeon, Minsuk Kim, and Doohyeok Lim, “Dual gate semiconductor memory device with vertical semiconductor column”
    Korea – Registration No. 10-1896759 (03/09/2018)
    US – Registration No. 3837155 (05/12/2017)

11. Sangsig Kim, Kyoungah Cho, Minsuk Kim, Yoonjoong Kim, and Doohyeok Lim, “Semiconductor memory device with vertical semiconductor column”
    Korea – Registration No. 10-1804666 (28/11/2017)

12. Sangsig Kim, Youngin Jeon, Minsuk Kim, and Doohyeok Lim, “Semiconductor device and method of fabricating same”
    Korea – Registration No. 10-1602911 (07/03/2016)
    US – Registration No. 9614067 (04/04/2017)