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Our home-built ultrafast angle-resolved photoelectron spectroscopy (ARPES) set-up allows us to measure the electronic structure of materials, surfaces and thin films, all of which are prepared and studied in ultrahigh vacuum at 10-10 mbar. We are able to generate temperatures that range from 110 K to over 1000 K, which allows us to freeze motion and to generate atomically clean surfaces for developing a precise understanding of the properties of surfaces and interfaces. To excite the materials and study their interactions with light, we use Extreme UV lamps and ultrafast laser pulses.
Our home-built ultrafast angle-resolved photoelectron spectroscopy (ARPES) set-up allows us to measure the electronic structure of materials, surfaces and thin films, all of which are prepared and studied in ultrahigh vacuum at 10-10 mbar. We are able to generate temperatures that range from 110 K to over 1000 K, which allows us to freeze motion and to generate atomically clean surfaces for developing a precise understanding of the properties of surfaces and interfaces. To excite the materials and study their interactions with light, we use Extreme UV lamps and ultrafast laser pulses.
Angel Garlant and Sara Zachritz service the hemispherical analyzer on the chamber system.
Ultrafast Surface science
Ultrafast Surface science
Students working on ARPES projects have the opportunity to learn methods of surface science, electronics, ultrafast lasers and optics, which they can use to study organic semiconductor films, 2D materials and quantum materials.
Students working on ARPES projects have the opportunity to learn methods of surface science, electronics, ultrafast lasers and optics, which they can use to study organic semiconductor films, 2D materials and quantum materials.
David Racke checks the control electronics of our ARPES instrument.
Band structure of Cu(110)-O(2x1) measured by ARPES, together with arrangement of surface atoms and Brillouin zone.
Joohyung Park mounts the low-energy electron diffraction chamber.
Band structures of MoS2 and K-intercalated MoS2 showing massive electronic changes upon K doping.
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