Journal

 [2025]

085. J. W. Na, S. Lee, H. Min, G. Jang, M Song, I. S. Lee, J.-H. Yang, M. J. Kim, K.-B. Chung, and S. J. Kim*,

        Investigation of chlorine-induced damage in oxide semiconductor transistors,

        ACS Applied Electronic Materials, 7, 6128, 2025. [Link] 

084. J. W. Na, K. Moon, I. S. Lee, K. Park, H. S. Kim,  S. J. Kim, and H. J. Kim,

        Enhanced electrical stability in IGZO TFTs through passivation effects of PTFE in the back-channel layer,

        Applied Physics Letters, 126, 193504, 2025. [Link] 

083. J.-H. Kim, S. Song, D. M. Narayan, D. N. Le, T. T. H. Chu, M. Lee, G. Park, S. Lee, J. Kang, J. Spiegelman, M. Benham, S. J. Kim, R. Choi, and J. Kim,

        Impact of tetrakis(ethylmethylamino)-based precursor and oxygen source selection on atomic layer deposition of ferroelectric HfXZr1-XO2 thin films,

        Applied Surface Science, 686, 162197, 2025. [Link]

082. J. Kang, S. Park, H. R. Park, S. Lee, J.-H. Kim, M. Lee, D. M. Narayan, J. G. Yoo, G. Park, H. S. Kim, Y. C. Jung, R. Choi, J. Kim*, and S. J. Kim*,

        Thermal budget study to simultaneously achieve low-temperature (<400°C) process and high endurance of ferroelectric Hf0.5Zr0.5O2 thin films,

        Applied Physics Letters, 126, 102903, 2025. [Link]

        - Selected as Featured.

[2024]

081. M. Lee, J.-H. Kim, D. N. Le, S. Lee, S.-U. Song, R. Choi, Y. Ahn, S. W. Ryu, P.-R. Cha, C.-Y. Nam, S. Park, J. Kang, S. J. Kim*, and J. Kim*,

        BEOL compatible ultra-low operating voltage (0.5 V) and preconfigured switching polarization states in effective 3 nm ferroelectric HZO capacitors,

        in Proc. IEEE Symposium on VLSI Technology and Circuits, 2024. [Link] 

080. [Invited] M. Lee, D. M. Narayan, J.-H. Kim, D. N. Le, S. Shirodkar, S. Park, J. Kang, S. Lee, Y. Ahn, S. W. Ryu, S. J. Kim*, and J. Kim*,

        Hafnium oxide-based ferroelectric devices for in-memory computing: resistive and capacitive approaches,

        ACS Applied Electronic Materials, 6, 5391, 2024. [Link] 

        - Spotlight on Applications.

        - Selected as Supplementary Cover. [Link] 

079. [Invited] S. Lee, Y. C. Jung, H. R. Park, S. Park, J. Kang, J. Jeong, Y. Choi, J.-H. Kim, J. Mohan, H. S. Kim, J. Kim*, and S. J. Kim*,

        Analysis of ferroelectric properties of ALD-Hf0.5Zr0.5O2 thin films according to oxygen sources,

        Solid-State Electronics, 216, 108911, 2024. [Link] 

078. Y. Choi, J. Jeong, and S. J. Kim*,

        A study on the ferroelectric properties of Hf0.5Zr0.5O2 thin films using various annealing methods,

        Journal of Telecommunications and Information, 28, 29, 2024. [Link] 

[2023]

077. [Invited review] J.-H. Kim, T. Onaya, H. R. Park, Y. C. Jung, D, N. Le, M. Lee, H. Hernandez-Arriaga, Y. Zhang, E. H. R. Tsai, C.-Y. Nam, T. Nabatame, S. J. Kim*, and J. Kim*,

        Toward low-thermal-budget hafnia-based ferroelectrics via atomic layer deposition,

        ACS Applied Electronic Materials, 5, 4726, 2023. [Link] 

076. J.-H. Kim, M. Lee, S. Lee, Y. C. Jung, R. Choi, H. J. Kim, S. J. Kim, and J. Kim,

        Strategy for low temperature HZO ferroelectric capacitors for back-end of line applications,

        in Proc. 7th IEEE Electron Devices Technology and Manufacturing, 2023. [Link] 

075. H. R. Park, J. G. Yoo, J. M. Kang, M. K. Cho, T. Gong, S. Park, S. Lee, J.-H. Kim‚ S. Lee, R. Choi, H. S. Kim, Y. C. Jung‚ J. Kim*, and S. J. Kim*,

        A study on the thermal budget of ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors for next-generation memory applications,

        in Proc. 7th IEEE Electron Devices Technology and Manufacturing, 2023. [Link] 

074. [Invited] M. K. Cho, J. G. Yoo, H. R. Park, J. M. Kang, T. Gong, Y. C. Jung, J. Kim, and S. J. Kim*,

        Furnace annealing effect on ferroelectric Hf0.5Zr0.5O2 thin films,

        Journal of the Korean Institute of Electrical and Electronic Material Engineers, 36, 88, 2023. [Link] 

[2022]

073. Y. C. Jung, J.-H. Kim, H. Hernandez-Arriaga, J. Mohan, S. M. Hwang, D. N. Le, A. Sahota, H. S. Kim, K. Kim, R. Choi, C.-Y. Nam, D. Alvarez, J. Spiegelman, S. J. Kim*, and J. Kim*,

        Robust low-temperature (350°C) ferroelectric Hf0.5Zr0.5O2 fabricated using anhydrous H2O2 as the ALD oxidant,

        Applied Physics Letters, 121, 222901, 2022. [Link] 

072. [Invited] J. Mohan, Y. C. Jung*, H. Hernandez-Arriaga, J.-H. Kim, T. Onaya, A. Sahota, S. M. Hwang, D. N. Le, J. Kim, and S. J. Kim*,

        Relaxation induced by imprint phenomena in low-temperature (400°C) processed Hf0.5Zr0.5O2‑based metal-ferroelectric-metal capacitors,

        ACS Applied Electronic Materials, 4, 1405, 2022. [Link] 

        - Early Career Forum. [Link] 

        - Selected as Supplementary Cover. [Link] 

071. S. M. Hwang, H. S. Kim, D. N. Le, A. Sahota, J. Lee, Y. C. Jung, S. W. Kim, S. J. Kim, R. Choi, J. Ahn, B. K. Hwang, X. Zhou, and J. Kim,

        High wet-etch resistance SiO2 films deposited by plasma-enhanced atomic layer deposition with 1,1,1-tris(dimethylamino)disilane,

        Journal of Vacuum Science & Technology A, 40, 022406, 2022. [Link] 

070. A. Sahota, H. S. Kim, J. Mohan, Y. C. Jung, H. Hernandez-Arriaga, D. N. Le, S. J. Kim, J.-S. Lee, J. Ahn, and J. Kim,

        Highly reliable selection behavior with controlled Ag doping of nano-polycrystalline ZnO layer for 3D X-point framework,

        IEEE Electron Device Letters, 43, 21, 2022. [Link] 

[2021]

069. S. J. Kim*, Y. C. Jung, J. Mohan, H. J. Kim, S. M. Rho, M. S. Kim, J. G. Yoo, H. R. Park, H. Hernandez-Arriaga, J.-H. Kim, H. T. Kim, D. H. Choi, J. Jung, S. M. Hwang, H. S. Kim, H. J. Kim*, and J. Kim*,

        Low-thermal-budget (300°C) ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors realized using high-pressure annealing,

        Applied Physics Letters, 119, 242901, 2021. [Link] 

068. A. Sahota, H. S. Kim, J. Mohan, D. N. Le, Y. C. Jung, S. J. Kim, J.-S. Lee, J. Ahn, H. Hernandez-Arriaga, and J. Kim,

        Nano-polycrystalline Ag-doped ZnO layer for steep-slope threshold switching selectors,

        AIP Advances, 11, 115213, 2021. [Link] 

        - Selected as an Editor's Pick.

067. H. S. Kim, A. Sahota, J. Mohan, A. T. Lucero, Y. C. Jung, M. Kim, J.-S. Lee, R. Choi, S. J. Kim*, and J. Kim*,

        Extremely low leakage threshold switch with enhanced characteristics via Ag doping on polycrystalline ZnO fabricated by a facile electrochemical deposition for X-point selector,

        ACS Applied Electronic Materials, 3, 2309, 2021. [Link] 

        - Selected as Supplementary Cover. [Link] 

066. [Invited] Y. C. Jung, J. Mohan, S. M. Hwang, J.-H. Kim, D. N. Le, A. Sahota, N. Kim, H. Hernandez-Arriaga, J.-F. Veyan, H. S. Kim, S. J. Kim, R. Choi, and J. Kim,

        A novel combinatorial approach to the ferroelectric properties in HfXZr1-XO2 deposited by atomic layer deposition,

        Physica Status Solidi-Rapid Research Letters, 15, 2100053, 2021. [Link] 

065. [Invited] J. Mohan, H. Hernandez-Arriaga, Y. C. Jung, T. Onaya, C.-Y. Nam, E. H. R. Tsai, S. J. Kim*, and J. Kim*,

        Ferroelectric polarization retention with scaling of Hf0.5Zr0.5O2 on silicon,

        Applied Physics Letters, 118, 102903, 2021. [Link] 

064. S. M. Hwang, H. S. Kim, D. N. Le, A. V. Ravichandran, A. Sahota, J. Lee, Y. C. Jung, S. J. Kim, J. Ahn, B. K. Hwang, L. Lee, X. Zhou, and J. Kim,

        Plasma-enhanced atomic-layer deposition of nanometer-thick SiNx films using trichlorodisilane for etch-resistant coatings,

        ACS Applied Nano Materials, 4, 2558, 2021. [Link] 

063. [Invited review] H. J. Kim, Y. An, Y. C. Jung, J. Mohan, J. G. Yoo, Y. I. Kim, H. Hernandez-Arriaga, H. S. Kim, J. Kim*, and S. J. Kim*,

        Low-thermal-budget fluorite-structure ferroelectrics for future electronic device applications,

        Physica Status Solidi-Rapid Research Letters, 15, 2100028, 2021. [Link] 

        - Selected as Inside Front Cover. [Link] 

        - Top Cited Article (2021-2022).

[2020]

062. H. S. Kim, S. M. Hwang, X. Meng, Y.-C. Byun, Y. C. Jung, A. V. Ravichandran, A. Sahota, S. J. Kim, J. Ahn, L. Lee, X. Zhou, B. K. Hwang, and J. Kim,

        High growth rate and high wet etch resistance silicon nitride grown by low temperature plasma enhanced atomic layer deposition with a novel silylamine precursor,

        Journal of Materials Chemistry C, 8, 13033, 2020. [Link] 

061. Y. C. Jung, S. M. Hwang, D. N. Le, A. L. N. Kondusamy, J. Mohan, S. W. Kim, J. H. Kim, A. T. Lucero, A. Ravichandran, H. S. Kim, S. J. Kim, R. Choi, J. Ahn, D. Alvarez, J. Spiegelman, and J. Kim,

        Low temperature thermal atomic layer deposition of aluminum nitride using hydrazine as the nitridation source,

        Materials, 13, 3387, 2020. [Link] 

060. S. J. Kim*, J. Mohan, H. S. Kim, S. M. Hwang, N. Kim, Y. C. Jung, A. Sahota, K. Kim, H.-Y. Yu, P.-R. Cha, C. D. Young, R. Choi, J. Ahn, and J. Kim*,

        A comprehensive study on the effect of TiN top and bottom electrodes on atomic layer deposited ferroelectric Hf0.5Zr0.5O2 thin films,

        Materials, 13, 2968, 2020. [Link] 

        - Selected as Featured.

        - Top Downloaded Paper (July-October 2020).

059. S. M. Hwang, Z. Qin, H. S. Kim, A. Ravichandran, Y. C. Jung, S. J. Kim*, J. Ahn, B. K. Hwang, and J. Kim*,

        Ozone based high-temperature atomic layer deposition of SiO2 thin films,

        Japanese Journal of Applied Physics, 59, SIIG05, 2020. [Link] 

058. Y. J. Tak, S. T. Keene, B. H. Kang, W.-G. Kim, S. J. Kim, A. Salleo, and H. J. Kim,

        Multifunctional, room-temperature processable, heterogeneous organic passivation layer for oxide semiconductor thin-film transistors,

        ACS Applied Materials & Interfaces, 12, 2615, 2020. [Link] 

[2019]

057. S. J. Kim, J. Mohan, H. S. Kim, J. Lee, S. M. Hwang, D. Narayan, J.-G. Lee, C. D. Young, L. Colombo, G. Goodman, A. S. Wan, P.-R. Cha, S. R. Summerfelt, T. San, and J. Kim,

        Effect of hydrogen derived from oxygen source on low-temperature ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors,

        Applied Physics Letters, 115, 182901, 2019. [Link] 

        - Selected as an Editor's Pick.

056. H. S. Kim, J. S. Lee, S. J. Kim, J. Lee, A. T. Lucero, M. M. Sung, and J. Kim,

        Realization of spatially addressable library by a novel combinatorial approach on atomic layer deposition: a case study of zinc oxide,

        ACS Combinatorial Science, 21, 445, 2019. [Link] 

055. S. J. Kim, J. Mohan, J. S. Lee, H. S. Kim, J. Lee, C. D. Young, L. Colombo, S. R. Summerfelt, T. San, and J. Kim,

        Stress-induced crystallization of thin Hf1-XZrXO2 films: the origin of enhanced energy density with minimized energy loss for lead-free electrostatic energy storage applications,

        ACS Applied Materials & Interfaces, 11, 5208, 2019. [Link] 

054. [Invited review] S. J. Kim, J. Mohan, S. R. Summerfelt, and J. Kim,

        Ferroelectric thin Hf0.5Zr0.5O2 films: a review of recent advances,

        JOM, 71, 246, 2019. [Link] 

[2018]

053. H. S. Kim, X. Meng, S. J. Kim, A. T. Lucero, L. Cheng, Y.-C. Byun, J. S. Lee, S. M. Hwang, A. L. N. Kondusamy, R. M. Wallace, G. Goodman, A. S. Wan, M. Telgenhoff, B. K. Hwang, and J. Kim,

        Investigation of the physical properties of plasma enhanced atomic layer deposited silicon nitride as etch stopper,

        ACS Applied Materials & Interfaces, 10, 44825, 2018. [Link] 

052. S. J. Kim, J. Mohan, H. S. Kim, J. Lee, C. D. Young, L. Colombo, S. R. Summerfelt, T. San, and J. Kim,

        Low-voltage operation and high endurance of 5-nm ferroelectric Hf0.5Zr0.5O2 capacitors,

        Applied Physics Letters, 113, 182903, 2018. [Link] 

        - Selected as Featured.

        - Selected as Press Release.

051. S. J. Kim, J. Mohan, C. D. Young, L. Colombo, J. Kim, S. R. Summerfelt, and T. San,

        Ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors with low-voltage operation and high reliability for next-generation FRAM applications,

        in Proc. 10th IEEE International Memory Workshop, 2018. [Link] 

050. X. Meng, J. Lee, A. V. Ravichandran, Y.-C. Byun, J.-G. Lee, A. T. Lucero, S. J. Kim, M.-W. Ha, C. D. Young, and J. Kim,

        Robust SiNx/GaN MIS-HEMTs with crystalline interfacial layer using hollow cathode PEALD,

        IEEE Electron Device Letters, 39, 1195, 2018. [Link] 

049. S. J. Kim, J. Mohan, J. Lee, J. S. Lee, A. T. Lucero, C. D. Young, L. Colombo, S. R. Summerfelt, T. San, and J. Kim,

        Effect of film thickness on the ferroelectric and dielectric properties of low-temperature (400°C) Hf0.5Zr0.5O2 films,

        Applied Physics Letters, 112, 172902, 2018. [Link] 

        - Selected as an Editor's Pick.

048. Y. J. Tak, D. J. Kim, W.-G. Kim, J. H. Lee, S. J. Kim, J. H. Kim, and H. J. Kim,

        Boosting visible light absorption of metal-oxide-based phototransistors via heterogeneous In-Ga-Zn-O and CH3NH3PbI3 films,

        ACS Applied Materials & Interfaces, 10, 12854, 2018. [Link] 

047. Y. J. Tak*, S. J. Kim*, S. Kwon, H. J. Kim, K.-B. Chung, and H. J. Kim,

        All-sputtered oxide thin-film transistors fabricated at 150°C using a simultaneous ultraviolet and thermal treatment,

        Journal of Materials Chemistry C, 6, 249, 2018. [Link] 

        *These authors contributed equally to this work.

[2017]

046. S. J. Kim, D. Narayan, J.-G. Lee, J. Mohan, J. S. Lee, J. Lee, H. S. Kim, Y.-C. Byun, A. T. Lucero, C. D. Young, S. R. Summerfelt, T. San, L. Colombo, and J. Kim,

        Large ferroelectric polarization of TiN/Hf0.5Zr0.5O2/TiN capacitors due to stress-induced crystallization at low thermal budget,

        Applied Physics Letters, 111, 242901, 2017. [Link] 

045. S. Yoon*, S. J. Kim*, H. S. Kim, J.-S. Park, I. K. Han, J. W. Jung, and M. Park,

        Solution-processed indium oxide electron transporting layers for high-performance and photo-stable perovskite and organic solar cells,

        Nanoscale, 9, 16305, 2017. [Link] 

        *These authors contributed equally to this work.

044. Y.-C. Byun, J.-G. Lee, X. Meng, J. S. Lee, A. T. Lucero, S. J. Kim, C. D. Young, M. J. Kim, and J. Kim,

        Low temperature (100°C) atomic layer deposited-ZrO2 for recessed gated GaN HEMTs on Si,

        Applied Physics Letters, 111, 082905, 2017. [Link] 

043. S. J. Kim, D. Narayan, J.-G. Lee, J. Mohan, J. S. Lee, J. Lee, C. D. Young, J. Kim, S. R. Summerfelt, T. San, and L. Colombo,

        Low temperature (400°C) ferroelectric Hf0.5Zr0.5O2 capacitors for next-generation FRAM applications,

        in Proc. 9th IEEE International Memory Workshop, 2017. [Link] 

042. S. Yoon*, S. J. Kim*, Y. J. Tak*, and H. J. Kim,

        A solution-processed quaternary oxide system obtained at low-temperature using a vertical diffusion technique,

        Scientific Reports, 7, 1, 2017. [Link] 

        *These authors contributed equally to this work.

041. J. Jung*, S. J. Kim*, T. S. Jung, J. Na, D. H. Yoon, M. Sabri, and H. J. Kim,

        Label-free flexible DNA biosensing system using low-temperature solution-processed In-Zn-O thin-film transistors,

        IEEE Transactions on Electron Devices, 64, 515, 2017. [Link] 

        *These authors contributed equally to this work.

[2016]

040. Y. J. Tak, B. D. Ahn, S. P. Park, S. J. Kim, A. R. Song, K.-B. Chung, and H. J. Kim,

        Activation of sputter-processed indium-gallium-zinc oxide films by simultaneous ultraviolet and thermal treatments,

        Scientific Reports, 6, 1, 2016. [Link] 

039. J. W. Na, Y. Kim, T. S. Jung, Y. J. Tak, S. P. Park, J. W. Park, S. J. Kim, and H. J. Kim,

        Interface location controlled indium gallium zinc oxide thin-film transistors using a solution process,

        Journal of Physics D: Applied Physics, 49, 085301, 2016. [Link] 

038. Y. J. Tak, Y. S. Rim, D. H. Yoon, S. J. Kim, S. P. Park, H. Lee, W.-G. Kim, Y. Yang, and H. J. Kim,

        Modified stoichiometry in homogeneous indium-zinc-oxide system as vertically graded oxygen deficiencies by controlling redox reactions,

        Advanced Materials Interfaces, 1500606, 2016. [Link] 

[2015]

037. T. S. Jung, S. J. Kim, C. H. Kim, J. Jung, J. Na, M. M. Sabri, and H. J. Kim,

        Replacement and rearrangement of an oxide lattice by germanium doping in solution-processed indium-zinc-oxide thin-film transistors,

        IEEE Transactions on Electron Devices, 62, 2888, 2015. [Link]  [Link] 

036. S. R. Dugasani*, K. W. Lee*, S. J. Kim*, S. Yoo, B. Gnapareddy, J. Jung, T. S. Jung, S. Bashar, H. J. Kim, and S. H. Park,

        Hall transport of divalent metal ion modified DNA lattices,

        Applied Physics Letters, 106, 263702, 2015.

        *These authors contributed equally to this work.

035. M.-K. Kang, S. J. Kim, and H. J. Kim,

        High-performance poly-Si TFTs using pressure-induced nucleation technology,

        SID Symposium Digest of Technical Papers, 46, 850, 2015. [Link] 

034. S. J. Kim, S. Yoon, Y. J. Tak, and H. J. Kim,

        Simple method for low-temperature processed In-Ga-Zn-O thin-film transistors by vertical diffusion technique,

        SID Symposium Digest of Technical Papers, 46, 1221, 2015. [Link] 

033. S. R. Dugasani, T. Ha, S. J. Kim, B. Gnapareddy, S. Yoo, K. W. Lee, T. S. Jung, H. J. Kim, S. H. Park, and J. H. Kim,

        Optical band gap and hall transport characteristics of lanthanide ion modified DNA crystals,

        Journal of Physical Chemistry C, 119, 14443, 2015. [Link] 

[2014]

032. M.-K. Kang*, S. J. Kim*, and H. J. Kim,

        Fabrication of high performance thin-film transistors via pressure-induced nucleation,

        Scientific Reports, 4, 1, 2014. [Link] 

        *These authors contributed equally to this work.

031. D. H. Yoon, S. J. Kim, J. Jung, S. J. Heo, and H. J. Kim,

        Effect of Hf incorporation in solution-processed NiOx based resistive random access memory,

        Applied Physics Letters, 104, 093508, 2014. [Link] 

030. [Invited review] S. J. Kim*, S. Yoon*, and H. J. Kim,

        Review of solution-processed oxide thin-film transistors,

        Japanese Journal of Applied Physics, 53, 02BA02, 2014. [Link] 

        *These authors contributed equally to this work.

029. J. Jung, S. J. Kim, K. W. Lee, D. H. Yoon, Y.-G Kim, H. Y. Kwak, S. R. Dugasani, S. H. Park, and H. J. Kim,

        Approaches to label-free flexible DNA biosensors using low-temperature solution-processed In-Zn-O thin-film transistors,

        Biosensors and Bioelectronics, 55, 99, 2014. [Link] 

[2013]

028. S. J. Kim, J. Jung, K. W. Lee, D. H. Yoon, T. S. Jung, S. R. Dugasani, S. H. Park, and H. J. Kim,

        Low-cost label-free electrical detection of artificial DNA nanostructures using solution-processed oxide thin-film transistors,

        ACS Applied Materials & Interfaces, 5, 10715, 2013. [Link] 

027. K. W. Lee, K. M. Kim, S. J. Kim, S. R. Dugasani, J. Lee, S. H. Park, and H. J. Kim,

        Charge-trap effects of 2D DNA nanostructures implanted in solution-processed InGaZnO thin-film transistor,

        Journal of Physics D: Applied Physics, 46, 215102, 2013. [Link] 

026. M.-K. Kang, S. J. Kim, and H. J. Kim,

        Formation of silicon nanoparticles by a pressure induced nucleation mechanism,

        Nanoscale, 5, 3266, 2013. [Link] 

025. S. J. Kim, B. Gunduz, D. H.Yoon, H. J. Kim, A. A. Al-Ghamdi, and F. Yakuphanoglu,

        Photofield effect and photoresponse properties of the transparent oxide-based BaInZnO thin-film transistors,

        Sensors and Actuators A: Physical, 193, 1, 2013. [Link] 

024. S. J. Kim, J. Jung, D. H. Yoon, and H. J. Kim,

        The effect of various solvents on the back channel of solution-processed In-Ga-Zn-O thin-film transistors intended for biosensor applications,

        Journal of Physics D: Applied Physics, 46, 035102, 2013. [Link] 

023. J. Jung, S. J. Kim, D. H. Yoon, B. Kim, S. H. Park, and H. J. Kim,

        Electrical responses of artificial DNA nanostructures on solution-processed In-Ga-Zn-O thin-film transistors with multistacked active layers,

        ACS Applied Materials & Interfaces, 5, 98, 2013. [Link] 

[2012]

022. J. S. Yang, S. H. Oh, D. L. Kim, S. J. Kim, and H. J. Kim,

        Hole transport enhancing effects of polar solvents on Poly(3,4-ethylenedioxythiophene):Poly(styrene sulfonic acid) for organic solar cells,

        ACS Applied Materials & Interfaces, 4, 5394, 2012. [Link] 

021. D. H. Yoon, S. J. Kim, J. Jung, H. S. Lim, and H. J. Kim,

        Low-voltage driving solution-processed nickel oxide based unipolar resistive switching memory with Ni nanoparticles,

        Journal of Materials Chemistry, 22, 17568, 2012. [Link] 

020. S. J. Kim, B. Kim, J. Jung, D. H. Yoon, J. Lee, S. H. Park, and H. J. Kim,

        Artificial DNA nanostructure detection using solution-processed In-Ga-Zn-O thin-film transistors,

        Applied Physics Letters, 100, 103702, 2012. [Link] 

        - Selected for Virtual Journal of Nanoscale Science & Technology, 2012.

        - Selected for Virtual Journal of Biological Physics Research, 2012.

[2011]

019. T. H. Jeong, S. J. Kim, and H. J. Kim,

        Direct current (DC) bias stress characteristics of a bottom-gate thin-film transistor with an amorphous/microcrystalline Si double layer,

        Transactions on Electrical and Electronic Materials, 12, 197, 2011. [Link] 

018. S. J. Kim, D. H. Yoon, Y. S. Rim, and H. J. Kim,

        Low-temperature solution-processed ZrO2 gate insulators for thin-film transistors using high-pressure annealing,

        Electrochemical and Solid-State Letters, 14, E35, 2011. [Link] 

017. W. H. Jeong, J. H. Bae, K. M. Kim, D. L. Kim, Y. S. Rim, S. J. Kim, K.-B. Park, J.-B. Seon, M.-K. Ryu, and H. J. Kim,

        Solution-processed oxide thin-film transistors using aluminum and nitrate precursors for low-temperature annealing,

        Journal of the Society for Information Display, 19, 620, 2011. [Link] 

016. T. H. Jeong, S. J. Kim, D. H. Yoon, W. H. Jeong, D. L. Kim, H. S. Lim, and H. J. Kim,

        Stability of solution-processed ZrInZnO thin-film transistors under gate bias stress,

        Journal of the Korean Physical Society, 59, 353, 2011. [Link] 

015. T. H. Jeong, S. J. Kim, D. H. Yoon, W. H. Jeong, D. L. Kim, H. S. Lim, and H. J. Kim,

        Study on the effects of Zr-incorporated InZnO thin-film transistors using a solution process,

        Japanese Journal of Applied Physics, 50, 070202, 2011. [Link] 

014. S. J. Kim, D. L. Kim, Y. S. Rim, W. H. Jeong, D. N. Kim, D. H. Yoon, and H. J. Kim,

        The formation of InZnO lattices incorporating Ba for thin-film transistors using a solution process,

        Journal of Crystal Growth, 326, 163, 2011. [Link] 

013. D. H. Yoon, S. J. Kim, W. H. Jeong, D. L. Kim, Y. S. Rim, and H. J. Kim,

        Investigation of Solution-processed Amorphous SrInZnO Thin film Transistors,

        Journal of Crystal Growth, 326, 171, 2011. [Link] 

012. D. H. Yoon, S. J. Kim, D. L. Kim, S. J. Heo, and H. J. Kim,

        Quenching effects on the solution-processed In-Ga-Zn-O system,

        Electrochemical and Solid-State Letters, 14, E28, 2011. [Link] 

011. M.-K. Kang, S. J. Kim, and H. J. Kim,

        Improved uniformity of sequential lateral solidification thin-film transistors,

        IEEE Electron Device Letters, 32, 767, 2011. [Link] 

010. S. J. Kim, D. L. Kim, D. N. Kim, and H. J. Kim,

        Characterization of a solution-processed YHfZrO gate insulator for thin-film transistors,

        Journal of Information Display, 11, 165, 2011. [Link] 

009. Y. S. Rim, D. L. Kim, W. H. Jeong, S. J. Kim, B. S. Kim, and H. J. Kim,

        Influence of a thermal parameter on solution-processed Zr-doped ZTO thin film transistors,

        Current Applied Physics, 11, 5258, 2011. [Link] 

[2010]

008. S. H. Pak, T. H. Jeong, S. J. Kim, K. H. Kim, and H. J. Kim,

        Electrical analysis of bottom gate TFT with novel process architecture,

        Journal of Information Display, 9, 5, 2010. [Link] 

007. M.-K. Kang, S. J. Kim, and H. J. Kim,

        A multi-channel structure to enhance the performance of a sequential lateral solidification thin-film transistor,

        Applied Physics Letters, 97, 202103, 2010. [Link] 

006. D. N. Kim, D. L. Kim, G. H. Kim, S. J. Kim, Y. S. Rim, W. H. Jeong, and H. J. Kim,

        The effect of La in InZnO systems for solution-processed amorphous oxide thin-film transistor,

        Applied Physics Letters, 97, 192105, 2010. [Link] 

005. D. N. Kim, G. H. Kim, D. L. Kim, S. J. Kim, and H. J. Kim,

        Thermal activation effects on the stoichiometry of indium zinc oxide thin-film transistors,

        Physica Status Solidi A-Applications and Materials Science, 207, 1689, 2010. [Link] 

004. S. J. Kim, G. H. Kim, D. L. Kim, D. N. Kim, and H. J. Kim,

        InGaZnO thin-film transistors with YHfZnO gate insulator by solution process,

        Physica Status Solidi A-Applications and Materials Science, 207, 1668, 2010. [Link] 

003. D. N. Kim, D. L. Kim, G. H. Kim, S. J. Kim, and H. J. Kim,

        Solution-processed amorphous lanthanum indium zinc oxide thin-film transistors,

        SID Symposium Digest of Technical Papers, 41, 1308, 2010. [Link] 

[2009]

002. D. L. Kim, S. H. Pak, S. J. Kim, S.-K. Park, and H. J. Kim,

        The effect of ultraviolet exposure on solution process of silicon thin film,

        Electrochemical and Solid-State Letters, 12, E23, 2009. [Link] 

001. S. J. Kim, D. L. Kim, and H. J. Kim,

        Fabricating gate insulator by low temperature solution-based process,

        Thin Solid Films, 517, 4135, 2009. [Link]