conference

[2026]

140. H. Kim, H. Min, S. Lee, G. Jang, Y. Kim, J. W. Na, and S. J. Kim*,

        Effects of process-induced chlorine on electrical characteristics and reliability of IGZO thin-film transistors

        Korean Meeting on Information Display (KMiD) 2026, Gangwon-do, Korea, January 19-21, 2026.

139. G. Jang, S. Lee, H. Min, Y. Kim, and S. J. Kim*,

        Investigation of low-temperature behavior of IGZO thin-film transistors with tunable oxygen vacancies,

        Korean Meeting on Information Display (KMiD) 2026, Gangwon-do, Korea, January 19-21, 2026.

[2025]

138. M. Lee, T. T. H. Chu, D. M. Narayan, S. Shirodkar, M. Jo, S. Lee, H. Min, G. Jang,  S. J. Kim*, and J. Kim*,

        High-k gate insulator engineering for low-voltage and reliable top-gated IGZO-FETs,

        IEEE Semiconductor Interface Specialists Conference (SISC) 2025, San Diego, USA, December 10-13, 2025.

137. H. Min, S. Park, S. Lee, G. Jang, J. Kang, and S. J. Kim*,

        Ramp-up rate engineering to enhance ferroelectric HZO for in-memory computing,

        International Conference on Advanced Electromaterials (ICAE) 2025, Jeju, Korea, November 25-28, 2025.

136. M. Song, S. Lee, H. Min, G. Jang, H. Lee, Y. Kim, H. Kim, and S. J. Kim*,

        Thermal and electrical stability of metal electrodes for high-reliability space transformer substrates in wafer-level testing,

        International Conference on Advanced Electromaterials (ICAE) 2025, Jeju, Korea, November 25-28, 2025.

135. H. Lee, M. Song, H. Min, G. Jang, S. Lee, and S. J. Kim*,

        Top electrode engineering for controlling ferroelectric properties of ALD-HZO thin films,

        International Technical Conference on Circuits/Systems, Computers, and Communications (ITC-CSCC) 2025, Seoul, Korea, July 7-10, 2025.

134. M. Lee, J. Kang, D. Narayan, G. Park, D. Le, S. Lee, H. Min, G. Jang, S. J. Kim, and J. Kim,

        Machine learning-driven thermal budget analysis for ferroelectric Hf0.5Zr0.5O2 capacitors,

        Atomic Layer Deposition (ALD) 2025, Jeju, Korea, June 22-25, 2025.

133. M. Lee, D. S. Kim, T. T. H. Chu, D. Narayan, D. Le, S. De, S. J. Kim, and J. Kim,

        Integrating machine learning into atomic layer deposition: a case study on hafnium oxide process optimization,

        Atomic Layer Deposition (ALD) 2025, Jeju, Korea, June 22-25, 2025.

132. M. Song, S. Lee, H. Min, G. Jang, J. W. Na, and S. J. Kim*,

        A study on the influence of chlorine concentration on electrical stability of IGZO thin-film transistors,

        The Korean Institute of Electrical and Electronic Material Engineers (KIEEME) 2025, Busan, Korea, June 18-20, 2025.

        - Outstanding Poster Paper Award.

131. H. Lee, S. Lee, H. Min, G. Jang, and S. J. Kim*,

        A study on cryogenic characterization of IGZO thin-film transistors,

        The Korean Institute of Electrical and Electronic Material Engineers (KIEEME) 2025, Busan, Korea, June 18-20, 2025.

        - Outstanding Poster Paper Award.

130. H. Min, J. Kang, S. Lee, G. Jang, M. Lee, J. Kim, and S. J. Kim*,

        Analysis of low-temperature crystallization of ferroelectric ALD-HZO thin films with Avrami constant calculation,

        The Korean Institute of Electrical and Electronic Material Engineers (KIEEME) 2025, Busan, Korea, June 18-20, 2025.

129. G. Jang, S. Lee, H. Min, J. Kim, and S. J. Kim*,

        Comprehensive analysis of the effects of metal precursors and oxygen sources on ferroelectric ALD-HZO thin films,

        The Korean Institute of Electrical and Electronic Material Engineers (KIEEME) 2025, Busan, Korea, June 18-20, 2025.

        - Outstanding Poster Paper Award.

128. S. Lee, H. Min, G. Jang, M. Lee, J. Kim, and S. J. Kim*,

        A study on the voltage-dependent ferroelectric characterization of ALD-HZO thin films under cryogenic conditions,

        The Korean Institute of Electrical and Electronic Material Engineers (KIEEME) 2025, Busan, Korea, June 18-20, 2025.

127. H. Min, J. Kang, J. H. Kim, S. Lee, J.-H. Kim, M. Lee, J. Kim, and S. J. Kim*,

        Thermal budget analysis of ferroelectric ALD-(Hf,Zr)O2 thin films using the JMAK model,

        Materials Research Society (MRS) 2025 spring, Seattle, USA, April 7-11, 2025.

126. S. Lee, J. Kang, J. H. Kim, J.-H. Kim, M. Lee, M. H Lee, J. Kim, and S. J. Kim*,

        Influence of W and TiN electrodes on ferroelectric ALD-(Hf,Zr)O2 capacitors at cryogenic temperatures,

        Materials Research Society (MRS) 2025 spring, Seattle, USA, April 7-11, 2025.

125. J. H. Kim, J. Kang, S. Lee, M. Lee, J.-H. Kim, J. Kim, and S. J. Kim*,

        A study on low-thermal-budget (300℃) process of ferroelectric (Hf,Zr)O2 thin films using HPA and furnace,

        The Korean Conference on Semiconductors (KCS) 2025, Gangwon-do, Korea, February 12-14, 2025.

124. S. Lee, J. Kang, J. H. Kim, M. Lee, J.-H. Kim, J. Kim, and S. J. Kim*,

        A study on the capping layer effect depending on oxygen source in ferroelectric (Hf,Zr)O2 thin films,

        The Korean Conference on Semiconductors (KCS) 2025, Gangwon-do, Korea, February 12-14, 2025.

123. H. Lee, J. Kang, S. Lee, J. H. Kim, and S. J. Kim*,

        Comparison of ferroelectric properties of W/HZO/W and TiN/HZO/TiN capacitors at cryogenic temperatures,

        The Korean Conference on Semiconductors (KCS) 2025, Gangwon-do, Korea, February 12-14, 2025.

122. M. Song, J. Kang, S. Lee, J. H. Kim, and S. J. Kim*,

        Application of the JMAK model for crystallization behavior in ferroelectric ALD-(Hf,Zr)O2 thin films,

        The Korean Conference on Semiconductors (KCS) 2025, Gangwon-do, Korea, February 12-14, 2025.

        - Outstanding Poster Paper Award.

121. G. Jang, J. H. Kim, H. Min, M. Song, H. Lee, J. Kang, S. Lee, and S. J. Kim*,

        A study on wafer-scale characterization of ALD-HZO thin films using a combinatorial approach,

        The Korean Conference on Semiconductors (KCS) 2025, Gangwon-do, Korea, February 12-14, 2025.

[2024]

120. G. Jang, J. H. Kim, H. Min, M. Song, H. Lee, J. Kang, S. Lee, and S. J. Kim*,

        Comprehensive study on the effect of compositional variation in single HfXZr1-XO2 thin films,

        The Korean Institute of Electrical and Electronic Material Engineers (KIEEME) 2024, Gangwon-do, Korea, October 31-November 1, 2024.

        - Outstanding Poster Paper Award.

119. J.-H. Kim, T. Ford, M. Lee, D. Le, T. Chu, D. Kim, M. Benham, J. Spiegelman, S. J. Kim, and J. Kim,

        Atomic layer deposition of niobium oxide using (tertbutylimido)tris(diethylamino)niobium and anhydrous hydrogen peroxide for ferroelectric hafnia applications,

        Atomic Layer Deposition (ALD) 2024, Helsinki, Finland, August 4-7, 2024.

118. J.-H. Kim, D. Le, M. Lee, T. Chu, D. Kim, J. Veyan, M. Benham, J. Spiegelman, S. J. Kim, and J. Kim,

        In-situ FTIR study of oxygen source mixing for hafnium oxide atomic layer deposition on titanium nitride,

        Atomic Layer Deposition (ALD) 2024, Helsinki, Finland, August 4-7, 2024.

        - ALD Student Award.

117. J. Kim, M. Lee, J. Kim, S. Kwon, S. Shirodkar, S. Park, J. Kang, and S. J. Kim,

        Scaling of operating voltage of HZO ferroelectric capacitors for low power nonvolatile memory applications,

        Nano Korea 2024, Goyang, Korea, July 3-5, 2024.

116. J. H. Kim, S. Park, J. Kang, S. Lee, Y. C. Jung, J. Kim, and S. J. Kim*,

        A study on low-temperature (<400℃) process of ferroelectric (Hf,Zr)O2 thin films using H2O2 as oxygen source,

        The Korean Institute of Electrical and Electronic Material Engineers (KIEEME) 2024, Busan, Korea, June 24-26, 2024.

        - Outstanding Poster Paper Award.

115. H. Min, J. Kang, S. Park, S. Lee, and S. J. Kim*,

        High-k ALD-(Hf,Zr)O2 thin films with morphotropic phase boundary toward next-generation DRAM technology,

        The Korean Institute of Electrical and Electronic Material Engineers (KIEEME) 2024, Busan, Korea, June 24-26, 2024.

        - Outstanding Poster Paper Award.

114. S. Lee, S. Park, J. Kang, Y. Choi, J.-H. Kim, M. Lee, J. Kim, and S. J. Kim*,

        Cryogenic characterization of ferroelectric (Hf,Zr)O2 thin films sandwiched between TiN or W electrodes,

        The Korean Institute of Electrical and Electronic Material Engineers (KIEEME) 2024, Busan, Korea, June 24-26, 2024.

113. J. Kang, S. Park, S. Lee, J.-H. Kim, M. Lee, J. Kim, and S. J. Kim*,

        A study on crystallization behaviors of low-temperature (<400℃) ferroelectric (Hf,Zr)O2 thin films using JMAK model,

        The Korean Institute of Electrical and Electronic Material Engineers (KIEEME) 2024, Busan, Korea, June 24-26, 2024.

112. M. Lee, J.-H. Kim, D. N. Le, S. Lee, S.-U. Song, R. Choi, Y. Ahn, S. W. Ryu, P.-R. Cha, C.-Y. Nam, S. Park, J. Kang, S. J. Kim*, and J. Kim*,

        BEOL compatible ultra-low operating voltage (0.5 V) and preconfigured switching polarization states in effective 3 nm ferroelectric HZO capacitors,

        IEEE Symposium on VLSI Technology and Circuits 2024, Hawaii, USA, June 16-20, 2024.

111. S. Park, S. Lee, H. R. Park, J. Kang, J. Jeong, Y. Choi, J.-H. Kim, M. Lee, J. Kim*, and S. J. Kim*,

        Analysis of hydrogen effect on ferroelectric (Hf,Zr)O2 thin films during atomic layer deposition process,

        The Korean Conference on Semiconductors (KCS) 2024, Gyeongju, Korea, January 24-26, 2024.

110. J. Kang, S. Park, H. R. Park, J. Jeong, Y. Choi, J.-H. Kim, M. Lee, J. Kim*, and S. J. Kim*,

        A study on low-temperature (<400°C) furnace annealing for BEOL compatible ferroelectric ALD-(Hf,Zr)O2 thin films,

        The Korean Conference on Semiconductors (KCS) 2024, Gyeongju, Korea, January 24-26, 2024.

109. J. Jeong, Y. C. Jung, J.-H. Kim, H. R. Park, S. Park, J. Kang, Y. Choi, J. Kim*, and S. J. Kim*,

        Comparative study on ferroelectric properties of (Hf,Zr)O2 thin films using H2O2 and O3 as ALD oxidants,

        The Korean Conference on Semiconductors (KCS) 2024, Gyeongju, Korea, January 24-26, 2024.

108. Y. Choi, H. R. Park, S. Park, J. Kang, J. Jeong, and S. J. Kim*,

        Investigation of ferroelectric properties of ALD-(Hf,Zr)O2 thin films from cryogenic to room temperatures,

        The Korean Conference on Semiconductors (KCS) 2024, Gyeongju, Korea, January 24-26, 2024.

107. H. Min, J. Kang, S. Park, H. R. Park, J. Jeong, Y. Choi, S. Lee, and S. J. Kim*,

        A study on the equivalent oxide thickness of Hf1-XZrXO2 thin films for next-generation DRAM applications,

        The Korean Conference on Semiconductors (KCS) 2024, Gyeongju, Korea, January 24-26, 2024.

[2023]

106. Y. Choi, H. R. Park, S. Park, J. Kang, J. Jeong, S. Lee, H.-H. Min, and S. J. Kim*,

        A study on the ferroelectric properties of hafnia-zirconia thin films at cryogenic temperatures,

        International Conference on Advanced Electromaterials (ICAE) 2023, Jeju, Korea, October 31-November 3, 2023.

105. J. Kim, J. H. Kim, M. Lee, D. Le, Y. Hong, S. Song, S. J. Kim, and R. Choi,

        In-situ reflectance absorption infra-red spectroscopy (RAIRS) study on ALD of HfO2 on TiN and Pt electrodes,

        The Electrochemical Society (ECS) Meeting 2023, Gothenburg, Sweden, October 8-12, 2023.

104. J. M. Kang, S. Park, H. R. Park, S. Lee, J.-H. Kim, J. Kim*, and S. J. Kim*,

        High endurance of back-end-of-line compatible ferroelectric Hf0.5Zr0.5O2 thin films through low temperature annealing,

        US-Korea Conference on Science, Technology, and Entrepreneurship (UKC) 2023, Dallas, USA, August 2-5, 2023.

103. S. Park, J. M. Kang, H. R. Park, S. Lee, J.-H. Kim, J. Kim*, and S. J. Kim*,

        Enhanced ferroelectric polarization of Hf0.5Zr0.5O2 thin films through fast ramp-up annealing process,

        US-Korea Conference on Science, Technology, and Entrepreneurship (UKC) 2023, Dallas, USA, August 2-5, 2023.

102. J.-H. Kim, S. Kim, D. Le, Y. C. Jung, S. M. Hwang, H. Hernandez-Arriaga, M. Lee, A. Khosravi, K. Tan, J. Spiegelman, M. Benham, S. J. Kim, and J. Kim,

        The impact of oxygen source on the formation of TiN interface at the initial stage ALD process of hafnia-based ferroelectrics: an in-situ analysis,

        Atomic Layer Deposition (ALD) 2023, Bellevue, USA, July 23-26, 2023.

101. H. R. Park, S. Park, J. M. Kang, J.-H. Kim, Y. C. Jung, J. Kim*, and S. J. Kim*, 

        Influence of oxygen source on ferroelectricity of ALD-Hf0.5Zr0.5O2 thin films with and without capping layer,

        Atomic Layer Deposition (ALD) 2023, Bellevue, USA, July 23-26, 2023.

100. J.-H. Kim, Y. C. Jung, M. Lee, D. Le, S. Lee, J. Spiegelman, M. Benham, S. J. Kim, R. Choi, and J. Kim,

        Impact of oxygen source and cocktail precursor on ferroelectricity of ALD HfXZr1-XO2 thin films,

        Atomic Layer Deposition (ALD) 2023, Bellevue, USA, July 23-26, 2023.

099. J. Jeong, H. R. Park, S. Park, J. M. Kang, Y. Choi, S. Lee, J.-H. Kim, J. Kim, and S. J. Kim*,

        A study on the ferroelectric properties of (Hf,Zr)O2 thin films using various annealing methods,

        The Korean Institute of Electrical and Electronic Material Engineers (KIEEME) 2023, Gangwon-do, Korea, June 21-23, 2023.

        - Outstanding Poster Paper Award.

098. Y. Choi, H. R. Park, S. Park, J. M. Kang, S. Lee, J. Jeong, J.-H. Kim, J. Kim, and S. J. Kim*,

        A study on cryogenic characterization of ferroelectric (Hf,Zr)O2 thin films,

        The Korean Institute of Electrical and Electronic Material Engineers (KIEEME) 2023, Gangwon-do, Korea, June 21-23, 2023.

        - Outstanding Poster Paper Award.

097. S. Lee, H. R. Park, S. Park, J. M. Kang, J. Jeong, Y. Choi, J.-H. Kim, J. Kim, and S. J. Kim*,

        A study on the effect of top electrode replacement for controlling the ferroelectric properties of (Hf,Zr)O2 thin films,

        The Korean Institute of Electrical and Electronic Material Engineers (KIEEME) 2023, Gangwon-do, Korea, June 21-23, 2023.

        - Outstanding Poster Paper Award.

096. S. Park, J. M. Kang, H. R. Park, J.-H. Kim, J. Kim, and S. J. Kim*,

        A study on improved ferroelectricity by (Hf,Zr)O2 crystallization using fast ramp-up rate,

        The Korean Institute of Electrical and Electronic Material Engineers (KIEEME) 2023, Gangwon-do, Korea, June 21-23, 2023.

095. J. M. Kang, S. Park, H. R. Park, J.-H. Kim, J. Kim, and S. J. Kim*,

        A study on BEOL-compatible low-temperature ferroelectric (Hf,Zr)O2 films with high endurance,

        The Korean Institute of Electrical and Electronic Material Engineers (KIEEME) 2023, Gangwon-do, Korea, June 21-23, 2023.

094. H. R. Park, S. Park, J. M. Kang, J.-H. Kim, J. Kim, and S. J. Kim*,

        A study on the ferroelectric properties of ALD-(Hf,Zr)O2 thin films annealed without capping layer depending on the oxygen source,

        The Korean Institute of Electrical and Electronic Material Engineers (KIEEME) 2023, Gangwon-do, Korea, June 21-23, 2023.

        - Outstanding Poster Paper Award.

093. J.-H. Kim, M. Lee, S. Lee, Y. C. Jung, R. Choi, H. J. Kim, S. J. Kim, and J. Kim,

        Strategy for low temperature HZO ferroelectric capacitors for back-end of line applications,

        IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2023, Seoul, Korea, March 7-10, 2023.

092. H. R. Park, J. G. Yoo, J. M. Kang, M. K. Cho, T. Gong, S. Park, S. Lee, J.-H. Kim‚ S. Lee, R. Choi, H. S. Kim, Y. C. Jung‚ J. Kim*, and S. J. Kim*,

        A study on the thermal budget of ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors for next-generation memory applications,

        IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2023, Seoul, Korea, March 7-10, 2023.

091. S. Lee, Y. C. Jung, H. R. Park, S. Park, J. G. Yoo, J. Kim, and S. J. Kim*,

        Analysis of ferroelectric properties of ALD-Hf0.5Zr0.5O2 thin films according to oxygen source,

        The Korean Conference on Semiconductors (KCS) 2023, Gangwon-do, Korea, February 13-15, 2023.

        - Outstanding Poster Paper Award.

090. S. Park, J. G. Yoo, H. R. Park, J. M. Kang, Y. C. Jung, J. Kim*, and S. J. Kim*,

        A study of ferroelectric properties according to ramp rate during Hf0.5Zr0.5O2 crystallization,

        The Korean Conference on Semiconductors (KCS) 2023, Gangwon-do, Korea, February 13-15, 2023.

        - Outstanding Poster Paper Award.

089. H. R. Park, J. G. Yoo, S. Park, Y. C. Jung, J. Kim*, and S. J. Kim*,

        Low-temperature ferroelectric Hf0.5Zr0.5O2 device for BEOL integration,

        The Korean Conference on Semiconductors (KCS) 2023, Gangwon-do, Korea, February 13-15, 2023.

[2022]

088. J.-H. Kim‚ Y. C. Jung‚ S. M. Hwang‚ D. N. Le‚ H. Hernandez-Arriaga‚ K. Tan, D. Alvarez‚ J. Spiegelman, S. J. Kim, and J. Kim,

        Half­-cycle study with in-­situ infrared spectroscopy of anhydrous hydrogen peroxide, ozone, and water based HfO2 atomic layer deposition for ferroelectric hafnia based device applications,

        IEEE Semiconductor Interface Specialists Conference (SISC) 2022, San Diego, USA, December 7-10, 2022.

087. J. G. Yoo, Y. C. Jung, J.-H. Kim, J. M. Kang, M. K. Cho, T. Gong, H. R. Park, S. Park, J. Kim*, and S. J. Kim*,

        A study on ferroelectric properties of furnace-annealed Hf0.5Zr0.5O2 films,

        The International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE) 2022, Jeju, Korea, November 6-9, 2022.

086. J. Kim‚ Y. C. Jung‚ S. M. Hwang‚ D. N. Le‚ H. Hernandez-Arriaga‚ K. Tan, D. Alvarez‚ J. Spiegelman, S. J. Kim, and J. Kim,

        In-situ half-cycle study of high purity H2O2-based HfO2 atomic layer deposition for Hf based ferroelectric devices applications,

        Atomic Layer Deposition (ALD) 2022, Ghent, Belgium, June 26-29, 2022.

085. Y. C. Jung‚ J.-H. Kim‚ H. Hernandez-Arriaga‚ D. N. Le‚ S. M. Hwang, D. Alvarez‚ J. Spiegelman, T. Onaya, C.-Y. Nam‚ Y. Zhang, S. J. Kim, and J. Kim,

        Scaling down to sub-5 nm ferroelectric Hf0.5Zr0.5O2 thin films with anhydrous H2O2 ALD oxidant,

        Atomic Layer Deposition (ALD) 2022, Ghent, Belgium, June 26-29, 2022.

084. J. M. Kang, J. G. Yoo, T. Gong, M. K. Cho, J. Kim, H. R. Park, Y. C. Jung, J. Kim, and S. J. Kim*,

        Effect of ramp rate during furnace annealing on ferroelectric Hf0.5Zr0.5O2 thin films,

        The Korean Institute of Electrical and Electronic Material Engineers (KIEEME) 2022, Gangwon-do, Korea, June 22-24, 2022.

        - Outstanding Poster Paper Award.

083. M. K. Cho, J. G. Yoo, J. M. Kang, T. Gong, J. Kim, H. R. Park, Y. C. Jung, J. Kim, and S. J. Kim*,

        Furnace annealing effect on ferroelectric Hf0.5Zr0.5O2 thin films,

        The Korean Institute of Electrical and Electronic Material Engineers (KIEEME) 2022, Gangwon-do, Korea, June 22-24, 2022.

        - Outstanding Poster Paper Award.

082. T. Gong, J. M. Kang, M. K. Cho, J. Kim, H. R. Park, J. G. Yoo, Y. C. Jung, J. Kim, and S. J. Kim*,

        A study on ferroelectric properties of Hf0.5Zr0.5O2-based MFIS capacitors,

        The Korean Institute of Electrical and Electronic Material Engineers (KIEEME) 2022, Gangwon-do, Korea, June 22-24, 2022.

        - Outstanding Poster Paper Award.

081. H. R. Park, J. G. Yoo, Y. C. Jung, J. Kim*, and S. J. Kim*,

        A study on ferroelectric properties of ALD-(Hf,Zr)O2 thin films using a combinatorial approach,

        The Korean Institute of Electrical and Electronic Material Engineers (KIEEME) 2022, Gangwon-do, Korea, June 22-24, 2022.

080. J. G. Yoo, H. R. Park, Y. C. Jung, J. Kim*, and S. J. Kim*,

        W electrode effect on ferroelectric properties of ALD-Hf0.5Zr0.5O2 films,

        The Korean Institute of Electrical and Electronic Material Engineers (KIEEME) 2022, Gangwon-do, Korea, June 22-24, 2022.

079. Y. C. Jung, J.-H. Kim, J. Mohan, H. Hernandez-Arriaga, S. M. Hwang, D. Alvarez, J. Spiegelman, S. J. Kim, and J. Kim,

        The scaling of low-temperature ferroelectric Hf0.5Zr0.5O2 thin films using anhydrous H2O2,

        The Minerals, Metals & Materials Society (TMS) 2022, Anaheim, USA, February 27-March 3, 2022.

078. H. R. Park, H. J. Kim, Y. C. Jung, J. Mohan, S. M. Rho, M. S. Kim, J. G. Yoo, M. K. Cho, H. Hernandez-Arriaga, J.-H. Kim, H. S. Kim, H. J. Kim*, J. Kim*, and S. J. Kim*,

        Investigation of ferroelectric properties of Hf0.5Zr0.5O2 thin films according to annealing conditions,

        The Korean Conference on Semiconductors (KCS) 2022, Gangwon-do, Korea, January 24-26, 2022.

077. J. G. Yoo, J. Mohan, Y. C. Jung, N. Kim, H. J. Kim, H. R. Park, M. K. Cho, H. Hernandez-Arriaga, H. S. Kim, R. Choi, J. Kim*, and S. J. Kim*,

        Investigation of tungsten electrode effect on ferroelectricity of ALD-Hf0.5Zr0.5O2 thin films,

        The Korean Conference on Semiconductors (KCS) 2022, Gangwon-do, Korea, January 24-26, 2022.

076. [Invited] S. J. Kim*,

        Low temperature ferroelectric Hf0.5Zr0.5O2 thin films for future electronic device applications,

        The Korean Conference on Semiconductors (KCS) 2022, Gangwon-do, Korea, January 24-26, 2022.

[2021]

075. A. Sahota, H. S. Kim, J. Mohan, D. N. Le, Y. C. Jung, S. J. Kim, J.-S. Lee, J. Ahn, H. Hernandez-Arriaga, and J. Kim,

        Nano-polycrystalline Ag doped ZnO layer for steep-slope threshold switching selectors,

        International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (IWDTF) 2021, Virtual Meeting, November 14-16, 2021.

074. J. G. Yoo, N. Kim, J. Mohan, Y. C. Jung, H. Hernandez-Arriaga, H. J. Kim, H. R. Park, H. S. Kim, S. J. Kim*, R. Choi*, and J. Kim*,

        Effect of bottom electrodes on ferroelectric properties of ALD-Hf0.5Zr0.5O2 films,

        European Material Research Society (E-MRS) 2021 fall, Virtual Meeting, September 20-23, 2021.

073. H. J. Kim, Y. C. Jung, J. Mohan, S. M. Rho, M. S. Kim, J. G. Yoo, H. R. Park, J.-H. Kim, H. S. Kim, S. J. Kim*, H. J. Kim*, and J. Kim*,

        Low-temperature (300°C) ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors using high-pressure annealing,

        European Material Research Society (E-MRS) 2021 fall, Virtual Meeting, September 20-23, 2021.

        - Graduate Student Award. [Link] 

072. [Invited] S. J. Kim*,

        Low-thermal budget ferroelectric Hf0.5Zr0.5O2 thin films,

        Workshop on Oxide Heterostructures (WOH) 2021, Virtual Meeting, August 20, 2021.

071. H. R. Park, H. J. Kim, J. G. Yoo, and S. J. Kim*,

        Electrode effect on ferroelectric properties of atomic layer deposited Hf0.5Zr0.5O2 films,

        The Korean Institute of Electrical and Electronic Material Engineers (KIEEME) 2021, Gangwon-do, Korea, June 30-July 2, 2021.

        - Outstanding Poster Paper Award.

070. H. J. Kim, J. G. Yoo, H. R. Park, and S. J. Kim*,

        Oxygen source effect on ferroelectric properties of atomic layer deposited Hf0.5Zr0.5O2 film,

        The Korean Institute of Electrical and Electronic Material Engineers (KIEEME) 2021, Gangwon-do, Korea, June 30-July 2, 2021.

        - Outstanding Poster Paper Award. [Link] 

069. H. J. Kim, Y. C. Jung, J. Mohan, J. G. Yoo, Y. I. Kim, Y. An, J. Kim*, and S. J. Kim*,

        The effect of TiN top and bottom electrodes on the ferroelectric properties of Hf0.5Zr0.5O2 thin films,

        The Korean Conference on Semiconductors (KCS) 2021, Virtual Meeting, January 25-29, 2021.

[2020]

068. Y. C. Jung, J. Mohan, H. S. Kim, H. Hernandez-Arriaga, T. Onaya, K. Kim, N. Kim, S. J. Kim, A. Ogura, R. Choi, J. Ahn, and J. Kim,

        Investigation of hydrogen effect on ferroelectricity of atomic layer deposited Hf0.5Zr0.5O2 thin film,

        Pacific Rim Meeting (PRiME) 2020, Virtual Meeting, October 4-9, 2020.

067. Y. C. Jung‚ J. Mohan, H. Kim‚ H. Hernandez-Arriaga, T. Onaya, K. Kim‚ N. Kim, S. J. Kim, A. Ogura, R. Choi, J. Ahn, and J. Kim,

        The effect of oxygen source on ferroelectricity of atomic layer deposited Hf0.5Zr0.5O2 thin film,

        Atomic Layer Deposition (ALD) 2020, Virtual Meeting, June 29-July 1, 2020.

066. J. Mohan, S. J. Kim, H. Hernandez-Arriaga, Y. C. Jung, T. Onaya, H. Kim‚ N. Kim‚ K. Kim, A. Ogura, R. Choi, M. M. Sung, and J. Kim,

        A combinatorial approach to the ferroelectric properties in HfxZr1-xO2 deposited by atomic layer deposition,

        Atomic Layer Deposition (ALD) 2020, Virtual Meeting, June 29-July 1, 2020.

065. S. M. Hwang, H. Kim‚ Z. Qin, A. Ravichandran, J. Lee, Y. C. Jung, S. J. Kim, J. Ahn, B. K. Hwang‚ L. Lee‚ X. Zhou, and J. Kim,

        High wet etch resistance SiO2 films deposited by plasma-enhanced atomic layer deposition using 1‚1‚1-tris(dimethylamino)disilane,

        Atomic Layer Deposition (ALD) 2020, Virtual Meeting, June 29-July 1, 2020.

064. [Invited] S. J. Kim*,

        Ferroelectric Hf0.5Zr0.5O2 thin films,

        The Korean Conference on Semiconductors (KCS) 2020, Gangwon-do, Korea, February 12-14, 2020.

[2019]

063. S. M. Hwang, X. Meng, S. J. Kim, A. Ravichandran, A. T. Lucero, J. Lee, B. K. Hwang, and J. Kim,

        Low-temperature PEALD SiNx on GaN MIS-HEMTs with crystalline interfacial layer,

        IEEE Semiconductor Interface Specialists Conference (SISC) 2019, San Diego, USA, December 11-14, 2019.

062. S. Hwang, X. Meng, S. J. Kim, A. Ravichandran, A. T. Lucero, J. Lee, B. K. Hwang, and J. Kim,

        Ex-situ grown low-temperature SiNx using hollow cathode plasma-enhanced atomic layer deposition with crystalline interfacial layer on AlGaN/GaN substrates,

        International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (IWDTF) 2019, Tokyo, Japan, November 18-20, 2019.

061. S. M. Hwang, Z. Qin, H. S. Kim, Y. C. Jung, S. J. Kim, B. K. Hwang, and J. Kim,

        Ozone based high temperature atomic layer deposition of SiO2 thin films,

        International Microprocesses and Nanotechnology Conference (MNC) 2019, Hiroshima, Japan, October 28-31, 2019.

060. S. J. Kim, J. Mohan, H. S. Kim, and J. Kim,

        Ferroelectric properties of low temperature Hf0.5Zr0.5O2 films,

        The Minerals, Metals & Materials Society (TMS) 2019, San Antonio, USA, March 10-14, 2019.

059. J. Mohan, S. J. Kim, and J. Kim,

        Ferroelectricity in hafnium zirconate using tungsten capping layer,

        The Minerals, Metals & Materials Society (TMS) 2019, San Antonio, USA, March 10-14, 2019.

058. H. S. Kim, S. J. Kim, J. Lee, A. Lucero, and J. Kim,

        Realization of spatially addressable library using Raman as combinatorial approach on atomic layer deposition,

        The Minerals, Metals & Materials Society (TMS) 2019, San Antonio, USA, March 10-14, 2019.

057. S. M. Hwang, A. Lucero, H. S. Kim, A. Kondusamy, S. J. Kim, and J. Kim,

        Investigation of hollow cathode plasma enhanced atomic layer deposition of silicon nitride (SiNx) thin films,

        The Minerals, Metals & Materials Society (TMS) 2019, San Antonio, USA, March 10-14, 2019.

[2018]

056. J. Kim, H. S. Kim, J. Huang, J. Mohan, L. Cheng, S. J. Kim, M. M. Sung, and J. Lee,

        Consecutive area-selective deposition using self-assembled monolayer,

        International Microprocesses and Nanotechnology Conference (MNC) 2018, Sapporo, Japan, November 13-16, 2018.

055. H. S. Kim, A. T. Lucero, S. J. Kim, and J. Kim,

        Realization of shifts in threshold voltage and subthreshold swing in atomic layer deposited zinc oxide as channel layer through in-situ half-cycle analysis,

        AVS International Symposium & Exhibition 2018, Long Beach, USA, October 21-26, 2018.

054. S. J. Kim, J. Mohan, H. S. Kim, J. Lee, and J. Kim,

        Ferroelectric and dielectric properties of Hf0.5Zr0.5O2 films,

        US-Korea Conference on Science, Technology, and Entrepreneurship (UKC) 2018, New York, USA, August 1-4, 2018.

053. J. Mohan, S. J. Kim, S. R. Summerfelt, and J. Kim,

        Scaling ferroelectric Hf0.5Zr0.5O2 for back-end of line integration,

        Atomic Layer Deposition (ALD) 2018, Incheon, Korea, July 29-August 1, 2018. 

052. H. Kim, A. Lucero, S. J. Kim, and J. Kim,

        In-situ half-cycle analysis of atomic layer deposited zinc oxide as channel layer in thin film transistor,

        Atomic Layer Deposition (ALD) 2018, Incheon, Korea, July 29-August 1, 2018.

        - Outstanding Poster Paper Award.

051. H. Kim, A. Lucero, S. J. Kim, and J. Kim,

        Wafer-scale characterization of atomic layer deposited zinc oxide thin films using a temperature gradient combinatorial approach,

        Atomic Layer Deposition (ALD) 2018, Incheon, Korea, July 29-August 1, 2018.

050. H. Kim, X. Meng, A. Lucero, L. Cheng, S. J. Kim, Y.-C. Byun, S. M. Hwang, M. Telgenhoff, B. K. Hwang, and J. Kim,

       Study of hollow cathode plasma enhanced atomic layer deposited silicon nitride: Relationship between film properties and wet etch rate,

       Atomic Layer Deposition (ALD) 2018, Incheon, Korea, July 29-August 1, 2018.

049. S. M. Hwang, X. Meng, A. Lucero, H. Kim, S. J. Kim, B. K. Hwang, and J. Kim,

        Ozone based high temperature atomic layer deposition of SiO2 thin films,

        Atomic Layer Deposition (ALD) 2018, Incheon, Korea, July 29-August 1, 2018. 

048. X. Meng, J. Lee, A. V. Ravichandran, Y.-C. Byun, J.-G. Lee, A. Lucero, S. J. Kim, M.-W. Ha, C. Young, B. K. Hwang, and J. Kim,

        Ex-situ grown low-temperature SiNx on GaN with crystalline interfacial layer using hollow cathode PEALD,

        Atomic Layer Deposition (ALD) 2018, Incheon, Korea, July 29-August 1, 2018.

        - Outstanding Poster Paper Award.

047. S. J. Kim, J. Mohan, C. D. Young, L. Colombo, J. Kim, S. R. Summerfelt, and T. San,

        Ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors with low-voltage operation and high reliability for next-generation FRAM applications,

        IEEE International Memory Workshop (IMW) 2018, Kyoto, Japan, May 13-16, 2018.

046. J. Mohan, S. J. Kim, D. Narayan, J.-G. Lee, S. R. Summerfelt, and J. Kim,

        Study on the stress-induced ferroelectric polarization of hafnium zirconate thin films realized at low temperature,

        The Minerals, Metals & Materials Society (TMS) 2018, Phoenix, USA, March 11-15, 2018.

[2017]

045. S. J. Kim, J. Mohan, S. R. Summerfelt, T. San, L. Colombo, and J. Kim,

        Scaling of atomic layer deposited ferroelectric Hf0.5Zr0.5O2 thin films for next-generation FRAM applications,

        International Microprocesses and Nanotechnology Conference (MNC) 2017, Jeju, Korea, November 6-9, 2017.

044. A. T. Lucero, J. Lee, L. Cheng, H. S. Kim, S. J. Kim, and J. Kim,

        In-situ electrical characterization of surface functionalization and gate dielectric deposition processes on 2D transition metal dichalcogenides transistors,

        AVS International Symposium & Exhibition 2017, Tampa, USA, October 31-November 2, 2017.

043. X. Meng, S. J. Kim, Y.-C. Byun, J.-G. Lee, and J. Kim,

        Epitaxial growth of ZnO layer on AlGaN/GaN heterostructure via atomic layer deposition,

        International Materials Research Congress (IMRC) 2017, Cancun, Mexico, August 20-25, 2017.

042. X. Meng, S. J. Kim, J.-G. Lee, Y.-C. Byun, and J. Kim,

        In-situ ALD diethylzinc (DEZ) surface passivation on In0.53Ga0.47As MOS devices,

        International Materials Research Congress (IMRC) 2017, Cancun, Mexico, August 20-25, 2017.

041. H. S. Kim, X. Meng, S. M. Hwang, A. T. Lucero, S. J. Kim, Y.-C. Byun, and J. Kim,

        Origin of the wet chemical resistance in silicon nitride films,

        US-Korea Conference on Science, Technology, and Entrepreneurship (UKC) 2017, Washington, USA, August 9-12, 2017.

040. S. J. Kim, D. Narayan, J.-G. Lee, J. Mohan, S. R. Summerfelt, and J. Kim,

        A study on the oxygen source and annealing temperature effects of atomic layer deposited ferroelectric Hf0.5Zr0.5O2 thin films,

        Atomic Layer Deposition (ALD) 2017, Denver, USA, July 15-18, 2017.

039. A. Lucero, J. Lee, L. Cheng, H. Kim, S. J. Kim, and J. Kim,

        Novel in-situ electrical characterization of the atomic layer deposition process on 2D transition metal dichalcogenides transistors,

        Atomic Layer Deposition (ALD) 2017, Denver, USA, July 15-18, 2017.

038. S. J. Kim, D. Narayan, J.-G. Lee, J. Mohan, J. S. Lee, J. Lee, C. D. Young, J. Kim, S. R. Summerfelt, T. San, and L. Colombo,

        Low temperature (400°C) ferroelectric Hf0.5Zr0.5O2 capacitors for next-generation FRAM applications,

        IEEE International Memory Workshop (IMW) 2017, Monterey, USA, May 14-17, 2017.

037. D. Narayan, S. J. Kim, J.-G. Lee, Y.-C. Byun, J. Lee, A. Lucero, S. Summerfelt, and J. Kim,

        The effect of H2O vs. O3 as the ALD oxidant on the ferroelectric phase transition of hafnium-zirconium oxide,

        The Minerals, Metals & Materials Society (TMS) 2017, San Diego, USA, February 26-March 2, 2017.

[2016]

036. B. H. Kang, S. J. Kim, Y. J. Tak, and H. J. Kim,

        Repair techniques for indium-gallium-zinc-oxide thin-film transistors: a comparison between vacuum and solution processes,

        Materials Research Society (MRS) 2016 fall, Boston, USA, November 27-December 2, 2016.

[2015]

035. S. J. Kim, S. Yoon, Y. J. Tak, and H. J. Kim,

        Simple method for low-temperature processed In-Ga-Zn-O thin-film transistors by vertical diffusion technique,

        Society for Information Display (SID) 2015, San Jose, USA, June 2-4, 2015.

034. [Invited] M.-K. Kang*, S. J. Kim*, and H. J. Kim,

        High-performance polycrystalline Si thin-film transistors using pressure-induced nucleation technology,

        Society for Information Display (SID) 2015, San Jose, USA, June 2-4, 2015.

        *These authors contributed equally to this work.

[2014]

033. T. S. Jung, S. J. Kim, J. Jung, J. Na, and H. J. Kim,

        Effects of germanium doping in solution-processed indium-zinc-oxide thin-film transistors,

        International Meeting on Information Display (IMID) 2014, Daegu, Korea, August 26-29, 2014.

[2013]

032. S. J. Kim, J. Jung, D. H. Yoon, T. S. Jung, K. W. Lee, and H. J. Kim,

        Solution-processed oxide thin-film transistors for DNA sensing systems,

        Materials Research Society (MRS) 2013 fall, Boston, USA, December 1-6, 2013.

031. T. S. Jung, S. J. Kim, D. H. Yoon, and H. J. Kim,

        Role of germanium doping in solution-processed indium-zinc-oxide thin-film transistors,

        Materials Research Society (MRS) 2013 fall, Boston, USA, December 1-6, 2013.

030. D. H. Yoon, Y. J. Tak, J. Jung, S. J. Kim, and H. J. Kim,

        Resistive random access memory,

        AVS International Symposium & Exhibition 2013, Long Beach, USA, October 27-November 1, 2013.

029. J. Jung, S. J. Kim, D. H. Yoon, Y.-G. Kim, K. W. Lee, S. H. Park, and H. J. Kim,

        Low-temperature solution-processed oxide thin-film transistors for DNA biosensor,

        International Conference on Materials Chemistry (MC11), Coventry, UK, July 8-11, 2013.

028. S. Yoon, S. J. Kim, Y.-G. Kim, and H. J. Kim,

        Channel engineering of solution-processed oxide thin-film transistors,

        The International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO) 2013, Kanazawa, Japan, June 17-20, 2013.

027. S. J. Kim, J. Jung, D. H. Yoon, K. W. Lee, S. R. Dugasani, S. H. Park, and H. J. Kim,

        Application of solution-processed oxide thin-film transistors in DNA biosensors,

        Materials Research Society (MRS) 2013 spring, San Francisco, USA, April 1-5, 2013.

026. J. Jung, S. J. Kim, D. H. Yoon, K. W. Lee, S. H. Park, and H. J. Kim,

        An electrical method for amplified detection of DNA nanostructure based on solution-processed In-Ga-Zn-O thin-film transistors with multi-stacked active layers,

        Materials Research Society (MRS) 2013 spring, San Francisco, USA, April 1-5, 2013.

025. D. H. Yoon, S. J. Kim, J. Jung, and H. J. Kim,

        Resistive switching characteristics of solution-processed Ni-Hf-O thin film,

        Materials Research Society (MRS) 2013 spring, San Francisco, USA, April 1-5, 2013.

[2012]

024. D. H. Yoon, H. S. Lim, S. J. Kim, J. Jung, and H. J. Kim,

        The effect of annealing temperature in solution-processed In-Ga-O thin-film transistors,

        International Display Workshop (IDW) 2012, Kyoto, Japan, December 4-7, 2012. 

023. D. K. Kim, S. J. Kim, and H. J. Kim,

        Thermite reaction of CuO nanowires coated with deposited nano-Al,

        International Meeting on Information Display (IMID) 2012, Daegu, Korea, August 28-31, 2012.

022. S. J. Kim, J. Jung, D. H. Yoon, and H. J. Kim,

        Investigation of the back channel effect of various solvents on solution-processed oxide thin-film transistors,

        European Material Research Society (E-MRS) 2012 spring, Strasbourg, France, May 14-18, 2012.

021. S. Y. Kim, S. J. Kim, D. H. Yoon, J. Jung, and H. J. Kim,

        Investigation of gate bias stress stability for BaInZnO channel based thin-film transistors using solution process,

        European Material Research Society (E-MRS) 2012 spring, Strasbourg, France, May 14-18, 2012.

020. D. J. Kim, Y. S. Rim, S. J. Kim, and H. J. Kim,

        Achievement of a low temperature solution-processed ZrO2 gate insulator through pressurized O2 ambient annealing,

        European Material Research Society (E-MRS) 2012 spring, Strasbourg, France, May 14-18, 2012.

[2011]

019. S. J. Kim, J. Jung, D. H. Yoon, B. Kim, S. H. Park, and H. J. Kim,

        DNA detection using a solution-processed InGaZnO thin-film transistor,

        Materials Research Society (MRS) 2011 fall, Boston, USA, November 28-December 2, 2011.

018. D. H. Yoon, S. J. Kim, J. Jung, and H. J. Kim,

        Excellent reproducible resistive switching characteristics of solution-processed polycrystalline NiO thin-films,

        Materials Research Society (MRS) 2011 fall, Boston, USA, November 28-December 2, 2011.

017. S. J. Kim, D. N. Kim, D. L. Kim, D. H. Yoon, and H. J. Kim,

        Stability of solution-processed LaInZnO thin-film transistors,

        International Meeting on Information Display (IMID) 2011, Seoul, Korea, October 12-15, 2011.

        - Outstanding Poster Paper Award.

016. D. H. Yoon, S. J. Kim, and H. J. Kim,

        Investigation of solution-processed nitrogen doped In-Zn-O thin-film transistor,

        International Meeting on Information Display (IMID) 2011, Seoul, Korea, October 12-15, 2011.

015. S. J. Kim, D. H. Yoon, S. M. Ko, Y. S. Rim, and H. J. Kim,

        A low temperature solution-processed ZrO2 gate insulator using a high-pressure annealing method,

        E-MRS ICAM IUMRS 2011 spring, Nice, France, May 9-13, 2011.

014. D. L. Kim, Y. S. Rim, W. H. Jeong, S. J. Kim, D. N. Kim, and H. J. Kim,

        The property changes in solution-processed tin zinc oxide semiconductor depending on residual ligands after annealing process,

        International Thin-Film Transistor Conference (ITC) 2011, Cambridge, UK, March 3-4, 2011.

[2010]

013. W. H. Jeong, J. H. Bae, K. M. Kim, D. L. Kim, Y. S. Rim, S. J. Kim, H. J. Kim, M.-K. Ryu, K.-B. Park, J.-B. Seon, and S.-Y. Lee,

        Solution process for metal oxide thin film transistors under 350°C post-annealing,

        International Display Workshop (IDW) 2010, Fukuoka, Japan, December 1-3, 2010.

        - Outstanding Poster Paper Award.

012. S. J. Kim, D. L. Kim, Y. S. Rim, D. N. Kim, D. H. Yoon, and H. J. Kim,

        Effect of yttrium composition ratio on solution-processed hafnium oxide gate insulator for thin-film transistors,

        Materials Research Society (MRS) 2010 fall, Boston, USA, November 29-December 3, 2010.

011. D. H. Yoon, S. J. Kim, W. H. Jeong, D. L. Kim, Y. S. Rim, and H. J. Kim,

        Realization of quenching effect on the solution-processed InGaZnO thin film,

        Materials Research Society (MRS) 2010 fall, Boston, USA, November 29-December 3, 2010. 

010. S. J. Kim, W. H. Jeong, D. L. Kim, Y. S. Rim, D. N. Kim, D. H. Yoon, and H. J. Kim,

        The formation of Ba incorporated InZnO lattice by solution process for thin-film transistors,

        International Union of Materials Research Societies-International Conference on Electronic Materials (IUMRS-ICEM) 2010, Seoul, Korea, August 22-27, 2010.

009. D. H. Yoon, S. J. Kim, W. H. Jeong, D. L. Kim, Y. S. Rim, and H. J. Kim,

        Role of strontium doping in solution-processed indium zinc oxide thin-film transistor,

        International Union of Materials Research Societies-International Conference on Electronic Materials (IUMRS-ICEM) 2010, Seoul, Korea, August 22-27, 2010.

008. Y. S. Rim, D. L. Kim, W. H. Jeong, S. J. Kim, and H. J. Kim,

        Performance of Zr doped TZO thin film transistors fabricated by sol-gel process,

        International Union of Materials Research Societies-International Conference on Electronic Materials (IUMRS-ICEM) 2010, Seoul, Korea, August 22-27, 2010.

007. D. N. Kim, D. L. Kim, G. H. Kim, S. J. Kim, and H. J. Kim,

        Solution-processed amorphous lanthanum indium zinc oxide thin-film transistors,

        Society for Information Display (SID) 2010, Seattle, USA, May 23-28, 2010.

006. D. L. Kim, D. N. Kim, Y. S. Rim, S. J. Kim, and H. J. Kim,

        Performance modification in solution-processed tin zinc oxide TFT,

        Material Research Society (MRS) 2010 spring, San Francisco, USA,  April 5-9, 2010.

[2009]

005. S. J. Kim, D. L. Kim, D. N. Kim, and H. J. Kim,

        Oxide thin-film transistors with polymethylphenylsilane-spin-on glass as a gate insulator,

        European Material Research Society (E-MRS) 2009 spring, Strasbourg, France, June 8-12, 2009.

004. D. N. Kim, G. H. Kim, D. L. Kim, S. J. Kim, and H. J. Kim,

        Analysis of thermal activation effect on zinc oxide thin-film transistors,

        European Material Research Society (E-MRS) 2009 spring, Strasbourg, France, June 8-12, 2009.

[2008]

003. S. J. Kim, D. L. Kim, and H. J. Kim,

        New method of fabricating SiO2 films by solution-based process,

        International Conference on Microelectronics And Plasma technology (ICMAP) 2008, Jeju, Korea, August 18-20, 2008. 

002. D. L. Kim, S. J. Kim, and H. J. Kim,

        Pyrolysis behavior of poly(methylphenylsilane) prepared by rapid thermal annealing,

        European Material Research Society (E-MRS) 2008 spring, Strasbourg, France, May 26-30, 2008.

[2007]

001. S. H. Pak, T. H. Jeong, S. J. Kim, and H. J. Kim,

        Dynamic stress analysis of a bottom gate TFT having an active layer of amorphous/microcrystalline Si double-layers,

        International Meeting on Information Display (IMID) 2007, Daegu, Korea, August 27-31, 2007.

        - Outstanding Poster Paper Award.