Publications

1. Houqiang Fu, Kai Fu, Dinusha Herath Mudiyanselage, Cheng Chang, Imteaz Rahaman, and Yuji Zhao, “Selective Area Regrowth and Doping for Vertical GaN Power Devices”, chapter in “Gallium Nitride and Related Materials”, edited by Isik C. Kizilyalli, Jung Han, James S. Speck, and Eric P. Carlson, Springer, (2025). 

2. H. Fu, K. Fu, and Y. Zhao, “Vertical GaN on GaN power devices,” chapter in “Wide Bandgap Semiconductor-Based Electronics,” edited by Profs. Stephen J. Pearton and Ren Fan, IOP Science, 2020.

[126] I. Rahaman, M. E. Liao, Z. Wang, E. Y. Kwon, R. Sun, B. Li, H. D. Ellis, B. G. Duersch, D. Sun, J. Liu, M. S. Goorsky, M. A. Scarpulla, and K. Fu, “High thermal conductivity of rutile-GeO2 film by metal-organic chemical vapor deposition: 52.9 W m−1 K−1,” Appl. Phys. Lett., vol. 128, no. 8, p. 082101, Feb. 2026, doi: 10.1063/5.0310062.

[125] I. Rahaman, B. Li, H. D. Ellis, K. Anderson, F. Liu, M. A. Scarpulla, and K. Fu, “Phase Competition and Rutile Phase Stabilization of Growing GeO2 Films by MOCVD,” ACS Appl. Electron. Mater., Feb. 2026, doi: 10.1021/acsaelm.5c02249.

[124] G. Nyabere, H. Ellis, M. Gomez, W. Jia, Y. Liu, K. A. Higley, S. Krishnamoorthy, S. Blair, K. Fu, and B. Sensale-Rodriguez, “Control of extraordinary optical transmission in resonant terahertz gratings via lateral depletion in an AlGaN/GaN heterostructure,” J. Appl. Phys., vol. 139, no. 7, p. 073101, Feb. 2026, doi: 10.1063/5.0309604. (Featured Article)

[123] H. Ellis, I. Rahaman, A. Hillas, B. Li, V. Sarkar, and K. Fu, “β-Ga2O3-Based Radiation Detector for Proton Therapy,” IEEE Transactions on Nuclear Science, vol. 73, no. 2, pp. 400–406, Feb. 2026, doi: 10.1109/TNS.2026.3655218..

[122] I. Rahaman, A. Bolda, B. Li, H. Ellis, and K. Fu, “Study of Optical Properties of MOCVD-Grown Rutile GeO 2 Films,” J. Phys. D: Appl. Phys., 2025, doi: 10.1088/1361-6463/ae13ba.

[121] B. Li, I. Rahaman, H. Ellis, B. G. Duersch, K. Anderson, and K. Fu, “Phase Evolution and Substrate-Dependent Nucleation of Quartz GeO2 Films Grown by Metal-Organic Chemical Vapor Deposition on r- and c-Plane Sapphires,” physica status solidi (a), vol. n/a, no. n/a, p. e202500508, doi: 10.1002/pssa.202500508.

[120] H. Ellis, W. Jia, I. Rahaman, A. Hillas, B. Li, M. A. Scarpulla, B. Sensale Rodriguez, and K. Fu, “Degradation of 2.4-kV Ga₂O₃ Schottky Barrier Diode at High Temperatures Up to 500°C,” IEEE Transactions on Electron Devices, vol. 72, no. 10, pp. 5372–5378, Oct. 2025, doi: 10.1109/TED.2025.3601139.

[119] H. D. Ellis, B. Li, H. Xie, J. Fan, I. Rahaman, W. Gao, and K. Fu, “Carbon-Nanotube/β-Ga2O3 Heterojunction PIN Diodes,” ACS Appl. Electron. Mater., vol. 7, no. 18, pp. 8357–8363, Sep. 2025, doi: 10.1021/acsaelm.5c00631. (Journal Cover)

[118] I. Rahaman, H. D. Ellis, B. Li, M. Mohammadi, Y. Wang, and K. Fu, “Investigation of diamond/Ga2O3 and diamond/GaN hetero-p–n junctions using mechanical grafting,” Semicond. Sci. Technol., vol. 40, no. 8, p. 085002, Jul. 2025, doi: 10.1088/1361-6641/adf254.

[117] B. G. Duersch, I. Rahaman, and K. Fu, “In-Situ High-Temperature X-Ray Diffraction Study of Phase Transformation in MOCVD-Grown GeO2 Thin Films: Amorphous to Quartz and Rutile,” Microanal, vol. 31, no. Supplement_1, p. ozaf048.813, Jul. 2025, doi: 10.1093/mam/ozaf048.813.

[116] D. Wang, H. D. Ellis, D. H. Mudiyanselage, Z. He, B. Da, I. Rahaman, I. Baranowski, S. Gangwal, D. Vasileska, K. Fu, and H. Fu, “Multi-kV AlGaN/GaN Heterojunction Schottky Barrier Diodes With Hydrogen Plasma Guard Array Termination,” IEEE Electron Device Letters, vol. 46, no. 6, pp. 960–963, Jun. 2025, doi: 10.1109/LED.2025.3558166.

[115] Imteaz Rahaman, Botong Li, Hunter D. Ellis, Brian Roy Van Devener, Randy C. Polson, Kai Fu; A TEM study of MOCVD-grown rutile GeO2 films. Appl. Phys. Lett. 26 May 2025; 126 (21): 212106. https://doi.org/10.1063/5.0244206. (Featured Article)

[114] I. Rahaman, B. Li, B. G. Duersch, H. D. Ellis, and K. Fu, “Seed-Driven Stepwise Crystallization (SDSC) for Growing Rutile GeO2 Films via MOCVD,” ACS Appl. Electron. Mater., vol. 7, no. 7, pp. 2848–2854, Apr. 2025, doi: 10.1021/acsaelm.4c02361. (Journal Cover)

[113] B. Li, I. Rahaman, H. D. Ellis, H. Fu, Y. Zhao, Y. Cai, B. Zhang, and K. Fu, “Plasma Treatment Technologies for GaN Electronics,” Electronics, vol. 13, no. 22, Art. no. 22, Jan. 2024, doi: 10.3390/electronics13224343.

[112] I. Rahaman, B. G. Duersch, H. D. Ellis, M. A. Scarpulla, and K. Fu, “Epitaxial growth of rutile GeO2 via MOCVD,” Applied Physics Letters, vol. 125, no. 10, p. 102103, Sep. 2024, doi: 10.1063/5.0226661.

[111] I. Rahaman, H. D. Ellis, C. Chang, D. H. Mudiyanselage, M. Xu, B. Da, H. Fu, Y. Zhao, and K. Fu, “Epitaxial Growth of Ga2O3: A Review,” Materials, vol. 17, no. 17, Art. no. 17, Jan. 2024, doi: 10.3390/ma17174261. 

[110] I. Rahaman, H. D. Ellis, K. Anderson, M. A. Scarpulla, and K. Fu, “Growth of GeO2 on R-Plane and C-Plane Sapphires by MOCVD,” ACS Appl. Eng. Mater., vol. 2, no. 6, pp. 1724–1736, Jun. 2024, doi: 10.1021/acsaenm.4c00320.

[109] Q. Xie, J. Niroula, N. S. Rajput, M. Yuan, S. Luo, K. Fu, M. F. Isamotu, R. H. Palash, B. Sikder, S. R. Eisner, H. Surdi, A. J. Belanger, P. K. Darmawi-Iskandar, Z. Aksamija, R. J. Nemanich, S. M. Goodnick, D. G. Senesky, G. W. Hunter, N. Chowdhury, Y. Zhao, and T. Palacios, “Device and material investigations of GaN enhancement-mode transistors for Venus and harsh environments,” Applied Physics Letters, vol. 124, no. 17, p. 172104, Apr. 2024, doi: 10.1063/5.0186976.

[108] D. Herath Mudiyanselage, B. Da, J. Adivarahan, D. Wang, Z. He, K. Fu, Y. Zhao, and H. Fu, “β-Ga2O3-Based Heterostructures and Heterojunctions for Power Electronics: A Review of the Recent Advances,” Electronics, vol. 13, no. 7, Art. no. 7, Jan. 2024, doi: 10.3390/electronics13071234.

[107] K. Fu, S. Luo, H. Fu, K. Hatch, S. R. Alugubelli, H. Liu, T. Li, M. Xu, Z. Mei, Z. He, J. Zhou, C. Chang, F. A. Ponce, R. Nemanich, and Y. Zhao, “GaN-Based Threshold Switching Behaviors at High Temperatures Enabled by Interface Engineering for Harsh Environment Memory Applications,” IEEE Transactions on Electron Devices, vol. 71, no. 3, pp. 1641–1645, Mar. 2024, doi: 10.1109/TED.2023.3321562.

[106] Y. Zhao, M. Xu, X. Huang, J. Lebeau, T. Li, D. Wang, H. Fu, K. Fu, X. Wang, J. Lin, and H. Jiang, “Toward high efficiency at high temperatures: Recent progress and prospects on InGaN-Based solar cells,” Mater. Today Energy, vol. 31, 2023, doi: 10.1016/j.mtener.2022.101229.

[105] X. Zhang, B. Wang, K. Fu, R. Yue, H. Guo, S. Li, and Y. Cai, “Novel Pulsating-DC High-Voltage Linear Driving Scheme for GaN LED General Lighting,” Electronics, vol. 12, no. 3, Art. no. 3, Jan. 2023, doi: 10.3390/electronics12030764.

[104] M. Yuan, J. Niroula, Q. Xie, N. S. Rajput, K. Fu, S. Luo, S. K. Das, A. J. B. Iqbal, B. Sikder, M. F. Isamotu, M. Oh, S. R. Eisner, D. G. Senesky, G. W. Hunter, N. Chowdhury, Y. Zhao, and T. Palacios, “Enhancement-Mode GaN Transistor Technology for Harsh Environment Operation,” IEEE Electron Device Letters, vol. 44, no. 7, pp. 1068–1071, Jul. 2023, doi: 10.1109/LED.2023.3279813.

[103] Q. Xie, M. Yuan, J. Niroula, B. Sikder, S. Luo, K. Fu, N. S. Rajput, A. B. Pranta, P. Yadav, Y. Zhao, N. Chowdhury, and T. Palacios, “Towards DTCO in High Temperature GaN-on-Si Technology: Arithmetic Logic Unit at 300 °C and CAD Framework up to 500 °C,” in 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), Jun. 2023, pp. 1–2. doi: 10.23919/VLSITechnologyandCir57934.2023.10185364.

[102] P. Peri, K. Fu, H. Fu, J. Zhou, Y. Zhao, and D. J. Smith, “Impact of Substrate Morphology and Structural Defects in Freestanding Gallium Nitride on the Breakdown Characteristics of GaN-on-GaN Vertical Diodes,” J Electron Mater, vol. 52, no. 5, pp. 3343–3351, 2023, doi: 10.1007/s11664-023-10303-2.

[101] D. H. Mudiyanselage, R. Mandia, D. Wang, J. Adivarahan, Z. He, K. Fu, Y. Zhao, M. R. McCartney, D. J. Smith, and H. Fu, “Anisotropic electrical properties of NiOx/β-Ga2O3p-n heterojunctions on (2̅01), (001), and (010) crystal orientations,” Appl. Phys. Express, vol. 16, no. 9, p. 094002, Sep. 2023, doi: 10.35848/1882-0786/acf8ad.

[100] S. Luo, K. Fu, Q. Xie, M. Yuan, G. Gao, H. Guo, R. Xu, N. Giles, T. Li, Z. Mei, M. Xu, J. Zhou, Z. He, C. Chang, H. Zhu, T. Palacios, and Y. Zhao, “Investigation of vertical GaN-on-GaN p–n diode with regrown p-GaN for operation in Venus and other extreme environments,” Applied Physics Letters, vol. 123, no. 24, p. 243504, Dec. 2023, doi: 10.1063/5.0173535.

[99]   Z. He, K. Fu, M. Xu, J. Zhou, T. Li, and Y. Zhao, “Understanding the Breakdown Behavior of Ultrawide-Bandgap Boron Nitride Power Diodes Using Device Modeling,” Physica Status Solidi Rapid Res. Lett., 2023, doi: 10.1002/pssr.202200397.

[98]   J. Zhou, X. Zhao, R. Xu, K. Fu, T. Li, M. Xu, Z. He, J. T. Robinson, H. Zhu, X. Zhang, and Y. Zhao, “Characterizations of Second-order Nonlinear Optical Susceptibility for ϵ-phase Gallium Oxide,” in Compd. Semicond. Week, CSW, Institute of Electrical and Electronics Engineers Inc., 2022. doi: 10.1109/CSW55288.2022.9930385.

[97]   X. Zhang, X. Wei, P. Zhang, H. Zhang, L. Zhang, X. Deng, Y. Fan, G. Yu, Z. Dong, H. Fu, Y. Cai, K. Fu, and B. Zhang, “Low Threshold Voltage Shift in AlGaN/GaN MIS-HEMTs on Si Substrate Using SiNx/SiON as Composite Gate Dielectric,” Electronics (Switzerland), vol. 11, no. 6, 2022, doi: 10.3390/electronics11060895.

[96]   M. Yuan, Q. Xie, K. Fu, T. Hossain, J. Niroula, J. A. Greer, N. Chowdhury, Y. Zhao, and T. Palacios, “GaN Ring Oscillators Operational at 500 ◦C Based on a GaN-on-Si Platform,” IEEE Electron Device Lett, vol. 43, no. 11, pp. 1842–1845, 2022, doi: 10.1109/LED.2022.3204566.

[95]   M. Xu, D. Wang, K. Fu, D. H. Mudiyanselage, H. Fu, and Y. Hao, “A review of ultrawide bandgap materials: Properties, synthesis and devices,” Oxf. Op. Mater. Sci., vol. 2, no. 1, 2022, doi: 10.1093/oxfmat/itac004.

[94]   T. Li, J. Zhou, K. Fu, M. Xu, Z. He, and Y. Zhao, “Edge States Propagation within h-BN Topological Photonic Structures in UV-Vis Spectrum,” in Compd. Semicond. Week, CSW, Institute of Electrical and Electronics Engineers Inc., 2022. doi: 10.1109/CSW55288.2022.9930466.

[93]   T.-H. Kim, K. Fu, C. Yang, Y. Zhao, and E. T. Yu, “Electronic structure of epitaxially grown and regrown GaN pn junctions characterized by scanning Kelvin probe and capacitance microscopy,” J Appl Phys, vol. 131, no. 1, 2022, doi: 10.1063/5.0071422.

[92]   Z. He, K. Fu, M. Xu, J. Zhou, T. Li, and Y. Zhao, “Demonstration of Various h-BN Based Diodes with TCAD Simulation,” in Compd. Semicond. Week, CSW, Institute of Electrical and Electronics Engineers Inc., 2022. doi: 10.1109/CSW55288.2022.9930353.

[91]   K. A. Hatch, D. C. Messina, H. Fu, K. Fu, Y. Zhao, and R. J. Nemanich, “External charge compensation in etched gallium nitride measured by x-ray photoelectron spectroscopy,” J Appl Phys, vol. 131, no. 18, 2022, doi: 10.1063/5.0085529.

[90]   K. Fu, Z. He, C. Yang, J. Zhou, H. Fu, and Y. Zhao, “GaN-on-GaN p-i-n diodes with avalanche capability enabled by eliminating surface leakage with hydrogen plasma treatment,” Appl Phys Lett, vol. 121, no. 9, 2022, doi: 10.1063/5.0107677.

[89]   A. Biswas, M. Xu, K. Fu, J. Zhou, R. Xu, A. B. Puthirath, J. A. Hachtel, C. Li, S. A. Iyengar, H. Kannan, X. Zhang, T. Gray, R. Vajtai, A. Glen Birdwell, M. R. Neupane, D. A. Ruzmetov, P. B. Shah, T. Ivanov, H. Zhu, Y. Zhao, and P. M. Ajayan, “Properties and device performance of BN thin films grown on GaN by pulsed laser deposition,” Appl Phys Lett, vol. 121, no. 9, 2022, doi: 10.1063/5.0092356.

[88]   J. Zhou, H. Chen, K. Fu, and Y. Zhao, “Gallium oxide-based optical nonlinear effects and photonics devices,” J Mater Res, vol. 36, no. 23, pp. 4832–4845, 2021, doi: 10.1557/s43578-021-00397-x.

[87]   T.-H. Yang, J. Brown, K. Fu, J. Zhou, K. Hatch, C. Yang, J. Montes, X. Qi, H. Fu, R. J. Nemanich, and Y. Zhao, “AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MISHEMTs) using plasma deposited BN as gate dielectric,” Appl Phys Lett, vol. 118, no. 7, 2021, doi: 10.1063/5.0027885.

[86]   C. Yang, H. Fu, P. Peri, K. Fu, T.-H. Yang, J. Zhou, J. Montes, D. J. Smith, and Y. Zhao, “Enhancement-Mode Gate-Recess-Free GaN-Based p-Channel Heterojunction Field-Effect Transistor with Ultra-Low Subthreshold Swing,” IEEE Electron Device Lett, vol. 42, no. 8, pp. 1128–1131, 2021, doi: 10.1109/LED.2021.3092040.

[85]   C. Yang, H. Fu, K. Fu, T.-H. Yang, J. Zhou, J. Montes, and Y. Zhao, “Low-leakage kV-class GaN vertical p-n diodes with non-destructive breakdown enabled by hydrogen-plasma termination with p-GaN extension,” Semicond Sci Technol, vol. 36, no. 7, 2021, doi: 10.1088/1361-6641/ac038f.

[84]   X. Wei, X. Zhang, X. Zhou, Y. Ma, W. Tang, T. Chen, W. Liu, W. Tang, G. Yu, Y. Fan, K. Fu, Y. Cai, and B. Zhang, “Dual Current and Voltage Sensitivity Temperature Sensor Based on Lateral p-GaN/AlGaN/GaN Hybrid Anode Diode,” IEEE Sensors J., vol. 21, no. 20, pp. 22459–22463, 2021, doi: 10.1109/JSEN.2021.3109915.

[83]   P. Peri, K. Fu, H. Fu, Y. Zhao, and D. J. Smith, “Characterization of As-Grown and Regrown GaN-on-GaN Structures for Vertical p-n Power Devices,” J Electron Mater, vol. 50, no. 5, pp. 2637–2642, 2021, doi: 10.1007/s11664-021-08769-z.

[82]   S. Ghosh, K. Fu, F. Kargar, S. Rumyantsev, Y. Zhao, and A. A. Balandin, “Low-frequency noise characteristics of GaN vertical PIN diodes - Effects of design, current, and temperature,” Appl Phys Lett, vol. 119, no. 24, 2021, doi: 10.1063/5.0075498.

[81]   K. Fu, H. Fu, X. Deng, P.-Y. Su, H. Liu, K. Hatch, C.-Y. Cheng, D. Messina, R. V. Meidanshahi, P. Peri, C. Yang, T.-H. Yang, J. Montes, J. Zhou, X. Qi, S. M. Goodnick, F. A. Ponce, D. J. Smith, R. Nemanich, and Y. Zhao, “The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices,” Appl Phys Lett, vol. 118, no. 22, 2021, doi: 10.1063/5.0049473.

[80]   H. Fu, K. Fu, C. Yang, H. Liu, K. A. Hatch, P. Peri, D. Herath Mudiyanselage, B. Li, T.-H. Kim, S. R. Alugubelli, P.-Y. Su, D. C. Messina, X. Deng, C.-Y. Cheng, R. Vatan Meidanshahi, X. Huang, H. Chen, T.-H. Yang, J. Zhou, A. M. Armstrong, A. A. Allerman, E. T. Yu, J. Han, S. M. Goodnick, D. J. Smith, R. J. Nemanich, F. A. Ponce, and Y. Zhao, “Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress,” Mater. Today, vol. 49, pp. 296–323, 2021, doi: 10.1016/j.mattod.2021.04.011.

[79]   H. Fu, K. Fu, S. Chowdhury, T. Palacios, and Y. Zhao, “Vertical GaN Power Devices: Device Principles and Fabrication Technologies - Part II,” IEEE Trans. Electron Devices, vol. 68, no. 7, pp. 3212–3222, 2021, doi: 10.1109/TED.2021.3083209.

[78]   H. Fu, K. Fu, S. Chowdhury, T. Palacios, and Y. Zhao, “Vertical GaN Power Devices: Device Principles and Fabrication Technologies - Part i,” IEEE Trans. Electron Devices, vol. 68, no. 7, pp. 3200–3211, 2021, doi: 10.1109/TED.2021.3083239.

[77]   H. Chen, J. Zhou, D. Li, D. Chen, A. K. Vinod, H. Fu, X. Huang, T.-H. Yang, J. A. Montes, K. Fu, C. Yang, C.-Z. Ning, C. W. Wong, A. M. Armani, and Y. Zhao, “Supercontinuum Generation in High Order Waveguide Mode with near-Visible Pumping Using Aluminum Nitride Waveguides,” ACS Photonics, vol. 8, no. 5, pp. 1344–1352, 2021, doi: 10.1021/acsphotonics.0c01785.

[76]   J. Zhou, H. Chen, H. Fu, K. Fu, X. Deng, X. Huang, T.-H. Yang, J. A. Montes, C. Yang, X. Qi, B. Zhang, X. Zhang, and Y. Zhao, “Demonstration of low loss β-ga2o3 optical waveguides in the uv⇓nir spectra,” in Opt. InfoBase Conf. Pap, OSA - The Optical Society, 2020. doi: 10.1364/CLEO_AT.2020.JTh2F.26.

[75]   J. Zhou, H. Chen, H. Fu, K. Fu, X. Deng, X. Huang, T.-H. Yang, J. A. Montes, C. Yang, X. Qi, B. Zhang, X. Zhang, and Y. Zhao, “Demonstration of Low Loss β-Ga2O3 Optical Waveguides in the UV-NIR Spectra,” in Conf Proc Laser Electr Optic Soc Annu Meet CLEO, Institute of Electrical and Electronics Engineers Inc., 2020. Accessed: May 10, 2020. [Online]. Available: https://www.scopus.com/inward/record.uri?eid=2-s2.0-85091675385&partnerID=40&md5=53cedf28ff416f3df5c41d970b3cbfd3

[74]   T.-H. Yang, H. Fu, K. Fu, C. Yang, J. Montes, X. Huang, H. Chen, J. Zhou, X. Qi, X. Deng, and Y. Zhao, “Vertical GaN-on-GaN Schottky Barrier Diodes with Multi-Floating Metal Rings,” IEEE J. Electron Devices Soc., vol. 8, pp. 857–863, 2020, doi: 10.1109/JEDS.2020.3014133.

[73]   C. Yang, H. Fu, P.-Y. Su, H. Liu, K. Fu, X. Huang, T.-H. Yang, H. Chen, J. Zhou, X. Deng, J. Montes, X. Qi, F. A. Ponce, and Y. Zhao, “Demonstration of GaN-based metal-insulator-semiconductor junction by hydrogen plasma treatment,” Appl Phys Lett, vol. 117, no. 5, 2020, doi: 10.1063/5.0018473.

[72]   C. Yang, H. Fu, V. N. Kumar, K. Fu, H. Liu, X. Huang, T.-H. Yang, H. Chen, J. Zhou, X. Deng, J. Montes, F. A. Ponce, D. Vasileska, and Y. Zhao, “GaN Vertical-Channel Junction Field-Effect Transistors with Regrown p-GaN by MOCVD,” IEEE Trans. Electron Devices, vol. 67, no. 10, pp. 3972–3977, 2020, doi: 10.1109/TED.2020.3010183.

[71]   P.-Y. Su, H. Liu, C. Yang, K. Fu, H. Fu, Y. Zhao, and F. A. Ponce, “Lateral and vertical growth of Mg-doped GaN on trench-patterned GaN films,” Appl Phys Lett, vol. 117, no. 10, 2020, doi: 10.1063/5.0019349.

[70]   B. Raghothamachar, Y. Liu, H. Peng, T. Ailihumaer, M. Dudley, F. S. Shahedipour-Sandvik, K. A. Jones, A. Armstrong, A. A. Allerman, J. Han, H. Fu, K. Fu, and Y. Zhao, “X-ray topography characterization of gallium nitride substrates for power device development,” J Cryst Growth, vol. 544, 2020, doi: 10.1016/j.jcrysgro.2020.125709.

[69]   P. R. Peri, K. Hatch, D. Messina, K. Fu, Y. Zhao, R. Nemanich, and D. Smith, “Plasma Enhanced Atomic Layer-etched and Regrown GaN-on-GaN High Power p-n Diodes,” Microsc. Microanal., pp. 840–842, 2020, doi: 10.1017/S1431927620016049.

[68]   P. Peri, K. Fu, H. Fu, Y. Zhao, and D. J. Smith, “Structural breakdown in high power GaN-on-GaN p-n diode devices stressed to failure,” J. Vac. Sci. Technol. A Vac. Surf. Films, vol. 38, no. 6, 2020, doi: 10.1116/6.0000488.

[67]   J. Montes, C. Kopas, H. Chen, X. Huang, T.-H. Yang, K. Fu, C. Yang, J. Zhou, X. Qi, H. Fu, and Y. Zhao, “Deep level transient spectroscopy investigation of ultra-wide bandgap (2¯01) and (001) β -Ga2O3,” J Appl Phys, vol. 128, no. 20, 2020, doi: 10.1063/5.0021859.

[66]   X. Huang, D. Li, P.-Y. Su, H. Fu, H. Chen, C. Yang, J. Zhou, X. Qi, T.-H. Yang, J. Montes, X. Deng, K. Fu, S. P. DenBaars, S. Nakamura, F. A. Ponce, C.-Z. Ning, and Y. Zhao, “Anomalous carrier dynamics and localization effects in nonpolar m-plane InGaN/GaN quantum wells at high temperatures,” Nano Energy, vol. 76, 2020, doi: 10.1016/j.nanoen.2020.105013.

[65]   K. Fu, J. Zhou, X. Deng, X. Qi, D. J. Smith, S. M. Goodnick, Y. Zhao, H. Fu, X. Huang, T.-H. Yang, C.-Y. Cheng, P. R. Peri, H. Chen, J. Montes, and C. Yang, “Reverse Leakage Analysis for As-Grown and Regrown Vertical GaN-on-GaN Schottky Barrier Diodes,” IEEE J. Electron Devices Soc., vol. 8, pp. 74–83, 2020, doi: 10.1109/JEDS.2020.2963902.

[64]   K. Fu, X. Qi, H. Fu, P.-Y. Su, H. Liu, T.-H. Yang, C. Yang, J. Montes, J. Zhou, F. A. Ponce, and Y. Zhao, “Characterization of MOCVD regrown p-GaN and the interface properties for vertical GaN power devices,” Semicond Sci Technol, vol. 36, no. 1, 2020, doi: 10.1088/1361-6641/abc7d1.

[63]   H. Fu, J. Montes, X. Deng, X. Qi, S. M. Goodnick, F. A. Ponce, Y. Zhao, K. Fu, S. R. Alugubelli, C.-Y. Cheng, X. Huang, H. Chen, T.-H. Yang, C. Yang, and J. Zhou, “High Voltage Vertical GaN p-n Diodes with Hydrogen-Plasma Based Guard Rings,” IEEE Electron Device Lett, vol. 41, no. 1, pp. 127–130, 2020, doi: 10.1109/LED.2019.2954123.

[62]   J. Zhou, H. Chen, H. Fu, K. Fu, X. Deng, X. Huang, T.-H. Yang, J. A. Montes, C. Yang, X. Qi, B. Zhang, X. Zhang, and Y. Zhao, “Demonstration of low loss β -Ga2O3 optical waveguides in the UV-NIR spectra,” Appl Phys Lett, vol. 115, no. 25, 2019, doi: 10.1063/1.5133845.

[61]   T.-H. Yang, H. Fu, H. Chen, X. Huang, J. Montes, I. Baranowski, K. Fu, and Y. Zhao, “Temperature-dependent electrical properties of β-Ga 2 O 3 Schottky barrier diodes on highly doped single-crystal substrates,” J. Semicond., vol. 40, no. 1, 2019, doi: 10.1088/1674-4926/40/1/012801.

[60]   J. Montes, T.-H. Yang, H. Fu, H. Chen, X. Huang, K. Fu, I. Baranowski, and Y. Zhao, “Effect of Proton Radiation on Ultrawide Bandgap AlN Schottky Barrier Diodes,” IEEE Trans Nucl Sci, vol. 66, no. 1, pp. 91–96, 2019, doi: 10.1109/TNS.2018.2883400.

[59]   J. Montes, C. Yang, H. Fu, T.-H. Yang, K. Fu, H. Chen, J. Zhou, X. Huang, and Y. Zhao, “Demonstration of mechanically exfoliated β -Ga2O3/GaN p-n heterojunction,” Appl Phys Lett, vol. 114, no. 16, 2019, doi: 10.1063/1.5088516.

[58]   H. X. Liu, H. Q. Fu, K. Fu, S. R. Alugubelli, P. Y. Su, Y. J. Zhao, and F. A. Ponce, “Non-uniform Mg distribution in GaN epilayers grown on mesa structures for applications in GaN power electronics,” Appl. Phys. Lett., vol. 114, no. 8, p. 5, Feb. 2019, doi: 10.1063/1.5088168.

[57]   K. Fu, H. Fu, X. Huang, T. -H. Yang, H. Chen, I. Baranowski, J. Montes, C. Yang, J. Zhou, and Y. Zhao, “Threshold Switching and Memory Behaviors of Epitaxially Regrown GaN-on-GaN Vertical p-n Diodes With High Temperature Stability,” IEEE Electron Device Letters, vol. 40, no. 3, pp. 375–378, Mar. 2019, doi: 10.1109/LED.2019.2891391.

[56]   K. Fu, H. Fu, X. Huang, H. Chen, T. -H. Yang, J. Montes, C. Yang, J. Zhou, and Y. Zhao, “Demonstration of 1.27 kV Etch-Then-Regrow GaN  ${p}$ - ${n}$  Junctions With Low Leakage for GaN Power Electronics,” IEEE Electron Device Letters, vol. 40, no. 11, pp. 1728–1731, Nov. 2019, doi: 10.1109/LED.2019.2941830.

[55]   X. Q. Huang, W. Li, H. Q. Fu, D. Y. Li, C. M. Zhang, H. Chen, Y. Fang, K. Fu, S. P. DenBaars, S. Nakamura, S. M. Goodnick, C. Z. Ning, S. H. Fan, and Y. J. Zhao, “High-Temperature Polarization-Free III-Nitride Solar Cells with Self-Cooling Effects,” Acs Photonics, vol. 6, no. 8, pp. 2096–2103, Aug. 2019, doi: 10.1021/acsphotonics.9b00655.

[54]   X. Q. Huang, R. C. Fang, C. Yang, K. Fu, H. Q. Fu, H. Chen, T. H. Yang, J. G. Zhou, J. Montes, M. Kozicki, H. Barnaby, B. S. Zhang, and Y. J. Zhao, “Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide-based threshold switching device,” Nanotechnology, vol. 30, no. 21, p. 7, May 2019, doi: 10.1088/1361-6528/ab0484.

[53]   J. Han, J. H. Zhao, J. Zhao, Y. H. Xing, X. Cao, K. Fu, L. Song, X. G. Deng, and B. S. Zhang, “Impact of Interface Treatment on Dynamic Characteristic of AlGaN/GaN MIS-HEMTs,” Faguang Xuebao, vol. 40, no. 7, pp. 915–921, 2019, doi: 10.3788/fgxb20194007.0915.

[52]   H. Q. Fu, K. Fu, H. X. Liu, S. R. Alugubelli, X. Q. Huang, H. Chen, J. Montes, T. H. Yang, C. Yang, J. G. Zhou, F. A. Ponce, and Y. J. Zhao, “Implantation-and etching-free high voltage vertical GaN p-n diodes terminated by plasma-hydrogenated p-GaN: revealing the role of thermal annealing,” Appl. Phys. Express, vol. 12, no. 5, p. 6, May 2019, doi: 10.7567/1882-0786/ab1813.

[51]   H. Chen, J. Zhou, H. Fu, X. Huang, T.-H. Yang, K. Fu, J. A. Montes, C. Yang, and Y. Zhao, “Supercontinuum generation from dispersion engineered AlN nanophotonic waveguide arrays,” in Opt. InfoBase Conf. Pap, OSA - The Optical Society, 2019. doi: 10.1364/CLEO_SI.2019.SW4H.5.

[50]   H. Chen, J. Zhou, H. Fu, X. Huang, T.-H. Yang, K. Fu, J. A. Montes, C. Yang, and Y. Zhao, “Supercontinuum Generation from Dispersion Engineered A1N Nanophotonic Waveguide Arrays,” in Conf. Lasers Electro-Opt., CLEO - Proc., Institute of Electrical and Electronics Engineers Inc., 2019. doi: 10.23919/CLEO.2019.8749561.

[49]   H. Chen, H. Q. Fu, J. G. Zhou, X. Q. Huang, S. H. Yang, K. Fu, C. Yang, J. A. Montes, and Y. J. Zhao, “Study of crystalline defect induced optical scattering loss inside photonic waveguides in UV-visible spectral wavelengths using volume current method,” Opt Express, vol. 27, no. 12, pp. 17262–17273, Jun. 2019, doi: 10.1364/oe.27.017262.

[48]   S. R. Alugubelli, H. Fu, K. Fu, H. Liu, Y. Zhao, and F. A. Ponce, “Dopant profiling in p-i-n GaN structures using secondary electrons,” J Appl Phys, vol. 126, no. 1, 2019, doi: 10.1063/1.5096273.

[47]   S. R. Alugubelli, H. Fu, K. Fu, H. Liu, Y. Zhao, M. R. McCartney, and F. A. Ponce, “Determination of electronic band structure by electron holography of etched-and-regrown interfaces in GaN p-i-n diodes,” Appl. Phys. Lett., vol. 115, no. 20, 2019, doi: 10.1063/1.5127014.

[46]   J. Zhao, Y. H. Xing, K. Fu, P. P. Zhang, L. Song, F. Chen, T. T. Yang, X. G. Deng, S. Zhang, and B. S. Zhang, “Influence of channel/back-barrier thickness on the breakdown of AlGaN/GaN MIS-HEMTs,” J Semicond, vol. 39, no. 9, p. 5, Sep. 2018, doi: 10.1088/1674-4926/39/9/094003.

[45]   D. S. Zhao, R. Liu, K. Fu, G. H. Yu, Y. Cai, H. J. Huang, Y. Q. Wang, R. G. Sun, and B. S. Zhang, “An Al0.25 Ga0.75N/GaN Lateral Field Emission Device with a Nano Void Channel,” Chinese Phys Lett, vol. 35, no. 3, 2018, doi: 10.1088/0256-307X/35/3/038103.

[44]   L. Song, K. Fu, J. Zhao, G. Yu, R. Hao, Y. Fan, Y. Cai, and B. Zhang, “Degradation of AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors under off-state electrical stress,” Journal of Vacuum Science & Technology B, vol. 36, no. 4, p. 042201, Jul. 2018, doi: 10.1116/1.5023844.

[43]   L. Song, K. Fu, J. Zhao, G. H. Yu, R. H. Hao, X. D. Zhang, F. Chen, Y. M. Fan, Y. Cai, and B. S. Zhang, “Influence factors and temperature reliability of ohmic contact on AlGaN/GaN HEMTs,” AIP Adv., vol. 8, no. 3, p. 6, Mar. 2018, doi: 10.1063/1.5024803.

[42]   X. Huang, H. Chen, H. Fu, I. Baranowski, J. Montes, T.-H. Yang, K. Fu, B. P. Gunning, D. D. Koleske, and Y. Zhao, “Energy band engineering of InGaN/GaN multi-quantum-well solar cells via AlGaN electron- and hole-blocking layers,” Appl Phys Lett, vol. 113, no. 4, 2018, doi: 10.1063/1.5028530.

[41]   T. He, Y. Zhao, X. Zhang, W. Lin, K. Fu, C. Sun, F. Shi, X. Ding, G. Yu, K. Zhang, S. Lu, X. Zhang, and B. Zhang, “Solar-blind ultraviolet photodetector based on graphene/vertical Ga2O3 nanowire array heterojunction,” Nanophotonics, vol. 7, no. 9, pp. 1557–1562, 2018, doi: 10.1515/nanoph-2018-0061.

[40]   R. Hao, N. Xu, G. Yu, L. Song, F. Chen, J. Zhao, X. Deng, X. Li, K. Cheng, K. Fu, Y. Cai, X. Zhang, and B. Zhang, “Studies on Fabrication and Reliability of GaN High-Resistivity-Cap-Layer HEMT,” IEEE Trans. Electron Devices, vol. 65, no. 4, pp. 1314–1320, 2018, doi: 10.1109/TED.2018.2803521.

[39]   R. Hao, D. Wu, K. Fu, L. Song, F. Chen, J. Zhao, Z. Du, B. Zhang, Q. Wang, G. Yu, K. Cheng, Y. Cai, X. Zhang, and B. Zhang, “10 A/567 V normally off p-GaN gate HEMT with high-threshold voltage and low-gate leakage current,” Electron. Lett., vol. 54, no. 13, pp. 848–849, 2018, doi: 10.1049/el.2017.3981.

[38]   K. Fu, H. Fu, H. Liu, S. R. Alugubelli, T.-H. Yang, X. Huang, H. Chen, I. Baranowski, J. Montes, F. A. Ponce, and Y. Zhao, “Investigation of GaN-on-GaN vertical p-n diode with regrown p-GaN by metalorganic chemical vapor deposition,” Appl Phys Lett, vol. 113, no. 23, 2018, doi: 10.1063/1.5052479.

[37]   H. Fu, X. Zhang, K. Fu, H. Liu, S. R. Alugubelli, X. Huang, H. Chen, I. Baranowski, T.-H. Yang, K. Xu, F. A. Ponce, B. Zhang, and Y. Zhao, “Nonpolar vertical GaN-on-GaN p-n diodes grown on free-standing IMG ALIGN="MIDDLE" ALT="$(10\bar{1}0)$" SRC="AP180752if001.gif"/ m-plane GaN substrates,” Appl. Phys. Express, vol. 11, no. 11, 2018, doi: 10.7567/APEX.11.111003.

[36]   H. Fu, K. Fu, X. Huang, H. Chen, I. Baranowski, T.-H. Yang, J. Montes, and Y. Zhao, “High performance vertical GaN-on-GaN p-n power diodes with hydrogen-plasma-based edge termination,” IEEE Electron Device Lett, vol. 39, no. 7, pp. 1018–1021, 2018, doi: 10.1109/LED.2018.2837625.

[35]   Z. Zhang, L. Song, W. Li, K. Fu, G. Yu, X. Zhang, Y. Fan, X. Deng, S. Li, S. Sun, X. Li, J. Yuan, Q. Sun, Z. Dong, Y. Cai, and B. Zhang, “Mechanism of leakage of ion-implantation isolated AlGaN/GaN MIS-high electron mobility transistors on Si substrate,” Solid-State Electron., vol. 134, pp. 39–45, 2017, doi: 10.1016/j.sse.2017.05.007.

[34]   Z. Zhang, W. Li, K. Fu, G. Yu, X. Zhang, Y. Zhao, S. Sun, L. Song, X. Deng, Z. Xing, L. Yang, R. Ji, C. Zeng, Y. Fan, Z. Dong, Y. Cai, and B. Zhang, “AlGaN/GaN MIS-HEMTs of Very-Low Vth Hysteresis and Current Collapse With In-Situ Pre-Deposition Plasma Nitridation and LPCVD-Si3N4 Gate Insulator,” IEEE Electron Device Lett, vol. 38, no. 2, pp. 236–239, 2017, doi: 10.1109/LED.2016.2636136.

[33]   W. Yu, S. Li, Y. Zhang, W. Ma, T. Sun, J. Yuan, K. Fu, and Q. Bao, “Near-Infrared Photodetectors Based on MoTe2/Graphene Heterostructure with High Responsivity and Flexibility,” Small, vol. 13, no. 24, 2017, doi: 10.1002/smll.201700268.

[32]   T. Sun, Y. Wang, W. Yu, Y. Wang, Z. Dai, Z. Liu, B. N. Shivananju, Y. Zhang, K. Fu, B. Shabbir, W. Ma, S. Li, and Q. Bao, “Flexible Broadband Graphene Photodetectors Enhanced by Plasmonic Cu3− xP Colloidal Nanocrystals,” Small, vol. 13, no. 42, 2017, doi: 10.1002/smll.201701881.

[31]   L. Song, K. Fu, Z. Zhang, S. Sun, W. Li, G. Yu, R. Hao, Y. Fan, W. Shi, Y. Cai, and B. Zhang, “Interface Si donor control to improve dynamic performance of AlGaN/GaN MIS-HEMTs,” AIP Adv., vol. 7, no. 12, 2017, doi: 10.1063/1.5000126.

[30]   W. Li, Z. Zhang, K. Fu, G. Yu, X. Zhang, S. Sun, L. Song, R. Hao, Y. Fan, Y. Cai, and B. Zhang, “Design and simulation of a novel E-mode GaN MIS-HEMT based on a cascode connection for suppression of electric field under gate and improvement of reliability,” J. Semicond., vol. 38, no. 7, 2017, doi: 10.1088/1674-4926/38/7/074001.

[29]   M. Hua, Z. Zhang, J. Wei, J. Lei, G. Tang, K. Fu, Y. Cai, B. Zhang, and K. J. Chen, “Integration of LPCVD-SiNx gate dielectric with recessed-gate E-mode GaN MIS-FETs: Toward high performance, high stability and long TDDB lifetime,” in Tech. Dig. Int. Electron Meet. IEDM, Institute of Electrical and Electronics Engineers Inc., 2017, p. 10.4.1-10.4.4. doi: 10.1109/IEDM.2016.7838388.

[28]   R. Hao, W. Li, K. Fu, G. Yu, L. Song, J. Yuan, J. Li, X. Deng, X. Zhang, Q. Zhou, Y. Fan, W. Shi, Y. Cai, X. Zhang, and B. Zhang, “Breakdown Enhancement and Current Collapse Suppression by High-Resistivity GaN Cap Layer in Normally-Off AlGaN/GaN HEMTs,” IEEE Electron Device Lett, vol. 38, no. 11, pp. 1567–1570, 2017, doi: 10.1109/LED.2017.2749678.

[27]   F. Chen, S. Sun, X. Deng, K. Fu, G. Yu, L. Song, R. Hao, Y. Fan, Y. Cai, and B. Zhang, “High-resistivity unintentionally carbon-doped GaN layers with nitrogen as nucleation layer carrier gas grown by metal-organic chemical vapor deposition,” AIP Adv., vol. 7, no. 12, 2017, doi: 10.1063/1.4990099.

[26]   Z. Zhang, G. Yu, X. Zhang, X. Deng, S. Li, Y. Fan, S. Sun, L. Song, S. Tan, D. Wu, W. Li, W. Huang, K. Fu, Y. Cai, Q. Sun, and B. Zhang, “Studies on high-voltage GaN-on-Si MIS-HEMTs using LPCVD Si3N4 as gate dielectric and passivation layer,” IEEE Trans. Electron Devices, vol. 63, no. 2, pp. 731–738, 2016, doi: 10.1109/TED.2015.2510445.

[25]   Z. Zhang, S. Qin, K. Fu, G. Yu, W. Li, X. Zhang, S. Sun, L. Song, S. Li, R. Hao, Y. Fan, Q. Sun, G. Pan, Y. Cai, and B. Zhang, “Fabrication of normally-off AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors by photo-electrochemical gate recess etching in ionic liquid,” Appl. Phys. Express, vol. 9, no. 8, 2016, doi: 10.7567/APEX.9.084102.

[24]   W. Wang, K. Fu, C. Hu, F. N. Li, Z. C. Liu, S. Y. Li, F. Lin, J. Fu, J. J. Wang, and H. X. Wang, “Diamond based field-effect transistors with SiNx and ZrO2 double dielectric layers,” Diamond Relat. Mat., vol. 69, pp. 237–240, 2016, doi: 10.1016/j.diamond.2016.04.014.

[23]   S. Sun, K. Fu, G. Yu, Z. Zhang, L. Song, X. Deng, Z. Qi, S. Li, Q. Sun, Y. Cai, J. Dai, C. Chen, and B. Zhang, “AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with reduced leakage current and enhanced breakdown voltage using aluminum ion implantation,” Appl Phys Lett, vol. 108, no. 1, 2016, doi: 10.1063/1.4939508.

[22]   M. Hua, Y. Lu, S. Liu, C. Liu, K. Fu, Y. Cai, B. Zhang, and K. J. Chen, “Compatibility of AlN/SiNx passivation with LPCVD-SiNx gate dielectric in GaN-based MIS-HEMT,” IEEE Electron Device Lett, vol. 37, no. 3, pp. 265–268, 2016, doi: 10.1109/LED.2016.2519680.

[21]   M. Hua, Y. Lu, S. Liu, C. Liu, K. Fu, Y. Cai, B. Zhang, and K. J. Chen, “Compatibility of AlN/SiNx passivation technique with high-temperature process,” in CS MANTECH - Int. Conf. Compd. Semicond. Manuf. Technol., CS Mantech, 2016, pp. 233–236. Accessed: May 16, 2016. [Online]. Available: https://www.scopus.com/inward/record.uri?eid=2-s2.0-84978805846&partnerID=40&md5=276e104a98bc9e90316ee04f37b5239c

[20]   R. Hao, K. Fu, G. Yu, W. Li, J. Yuan, L. Song, Z. Zhang, S. Sun, X. Li, Y. Cai, X. Zhang, and B. Zhang, “Normally-off p -GaN/AlGaN/GaN high electron mobility transistors using hydrogen plasma treatment,” Appl Phys Lett, vol. 109, no. 15, 2016, doi: 10.1063/1.4964518.

[19]   Z. Zhang, G. Yu, X. Zhang, S. Tan, D. Wu, K. Fu, W. Huang, Y. Cai, and B. Zhang, “16.8 A/600 V AlGaN/GaN MIS-HEMTs employing LPCVD-Si3N4 as gate insulator,” Electron. Lett., vol. 51, no. 15, pp. 1201–1203, 2015, doi: 10.1049/el.2015.1018.

[18]   Z. Zhang, K. Fu, X. Deng, X. Zhang, Y. Fan, S. Sun, L. Song, Z. Xing, W. Huang, G. Yu, Y. Cai, and B. Zhang, “Normally off AlGaN/GaN MIS-High-Electron Mobility Transistors Fabricated by Using Low Pressure Chemical Vapor Deposition Si3N4 Gate Dielectric and Standard Fluorine Ion Implantation,” IEEE Electron Device Lett, vol. 36, no. 11, pp. 1128–1131, 2015, doi: 10.1109/LED.2015.2483760.

[17]   M. Hua, C. Liu, S. Yang, S. Liu, K. Fu, Z. Dong, Y. Cai, B. Zhang, and K. J. Chen, “GaN-based metal-insulator-semiconductor high-electron-mobility transistors using low-pressure chemical vapor deposition SiNx as gate dielectric,” IEEE Electron Device Lett, vol. 36, no. 5, pp. 448–450, 2015, doi: 10.1109/LED.2015.2409878.

[16]   M. Hua, C. Liu, S. Yang, S. Liu, K. Fu, Z. Dong, Y. Cai, B. Zhang, and K. J. Chen, “Characterization of leakage and reliability of SiNx gate dielectric by low-pressure chemical vapor deposition for GaN-based MIS-HEMTs,” IEEE Trans. Electron Devices, vol. 62, no. 10, pp. 3215–3222, 2015, doi: 10.1109/TED.2015.2469716.

[15]   M. Hua, C. Liu, S. Yang, S. Liu, Y. Lu, K. Fu, Z. Dong, Y. Cai, B. Zhang, and K. J. Chen, “650-V GaN-based MIS-HEMTs using LPCVD-SiNx as passivation and gate dielectric,” in Proc. Int. Symp. Power Semicond. Dev. ICs, Institute of Electrical and Electronics Engineers Inc., 2015, pp. 241–244. doi: 10.1109/ISPSD.2015.7123434.

[14]   S. Liu, G. Yu, K. Fu, S. Tan, Z. Zhang, C. Zeng, K. Hou, W. Huang, Y. Cai, B. Zhang, and J. Yuan, “12.5 A/350 v AlGaN/GaN-on-Si MOS-HEMT with low specific on-resistance and minimal threshold hysteresis,” Electron. Lett., vol. 50, no. 18, pp. 1322–1324, 2014, doi: 10.1049/el.2014.2020.

[13]   G. Chen, X. Q. Wang, K. Fu, X. Rong, H. Hashimoto, B. S. Zhang, F. J. Xu, N. Tang, A. Yoshikawa, W. K. Ge, and B. Shen, “Multi-bands photoconductive response in AlGaN/GaN multiple quantum wells,” Appl Phys Lett, vol. 104, no. 17, 2014, doi: 10.1063/1.4874982.

[12]   L. C. Yang, R. X. Wang, S. J. Xu, Z. Xing, Y. M. Fan, X. S. Shi, K. Fu, and B. S. Zhang, “Effects of annealing temperature on the characteristics of Ga-doped ZnO film metal-semiconductor-metal ultraviolet photodetectors,” J Appl Phys, vol. 113, no. 8, 2013, doi: 10.1063/1.4791760.

[11]   L. Yang, X. Zhou, D. Liu, H. Li, K. Fu, M. Xiong, and B. Zhang, “Extraordinary transmission based on deep perforated sub-wavelength metallic hole arrays for infrared photodetector,” J. Comput. Theor. Nanosci., vol. 10, no. 9, pp. 2131–2135, 2013, doi: 10.1166/jctn.2013.3178.

[10]   L. Yang, X. Zhou, H. Li, K. Fu, and B. Zhang, “Ultra-wideband multi-frequency terahertz square microstrip patch antenna on hybrid photonic crystal substrate,” J. Comput. Theor. Nanosci., vol. 10, no. 4, pp. 968–973, 2013, doi: 10.1166/jctn.2013.2794.

[9]     L. Yang, X. Shi, K. Chen, K. Fu, and B. Zhang, “Analysis of photonic crystal and multi-frequency terahertz microstrip patch antenna,” Phys B Condens Matter, vol. 431, pp. 11–14, 2013, doi: 10.1016/j.physb.2013.08.036.

[8]     R. X. Wang, L. C. Yang, Y. M. Zhang, S. J. Xu, K. Fu, B. S. Zhang, J. F. Wang, K. Xu, and H. Yang, “The effect of Ga-doped nanocrystalline ZnO electrode on deep-ultraviolet enhanced GaN photodetector,” Appl Phys Lett, vol. 102, no. 21, 2013, doi: 10.1063/1.4808381.

[7]     R. Wang, L. Yang, S. Xu, X. Zhang, X. Dong, Y. Zhao, K. Fu, B. Zhang, and H. Yang, “Bias-voltage dependent ultraviolet photodetectors prepared by GaO x + ZnO mixture phase nanocrystalline thin films,” J Alloys Compd, vol. 566, pp. 201–205, 2013, doi: 10.1016/j.jallcom.2013.03.039.

[6]     C. Yao, K. Fu, G. Wang, G. Yu, and M. Lu, “GaN-based p-i-n X-ray detection,” Phys. Status Solidi A Appl. Mater. Sci., vol. 209, no. 1, pp. 204–206, 2012, doi: 10.1002/pssa.201127446.

[5]     G. Wang, K. Fu, C.-S. Yao, D. Su, G.-G. Zhang, J.-Y. Wang, and M. Lu, “GaN-based PIN alpha particle detectors,” Nucl Instrum Methods Phys Res Sect A, vol. 663, no. 1, pp. 10–13, 2012, doi: 10.1016/j.nima.2011.09.003.

[4]     D. Liu, Y.-Q. Fu, L.-C. Yang, B.-S. Zhang, H.-J. Li, K. Fu, and M. Xiong, “Influence of passivation layers for metal grating-based quantum well infrared photodetectors,” Chin. Phys. Lett., vol. 29, no. 6, 2012, doi: 10.1088/0256-307X/29/6/060701.

[3]     M. Lu, G.-G. Zhang, K. Fu, G.-H. Yu, D. Su, and J.-F. Hu, “Gallium nitride schottky betavoltaic nuclear batteries,” Energy Convers. Manage., vol. 52, no. 4, pp. 1955–1958, 2011, doi: 10.1016/j.enconman.2010.10.048.

[2]     K. Fu, G. Yu, C. Yao, G. Wang, M. Lu, and G. Zhang, “X-ray detectors based on Fe doped GaN photoconductors,” Physica Status Solidi Rapid Res. Lett., vol. 5, no. 5–6, pp. 187–189, 2011, doi: 10.1002/pssr.201105163.

[1]     M. Lu, G.-G. Zhang, K. Fu, and G.-H. Yu, “Gallium nitride room temperature α particle detectors,” Chin. Phys. Lett., vol. 27, no. 5, 2010, doi: 10.1088/0256-307X/27/5/052901.

[84]   N. J. Nipa, K. Fu, M. T. Hassan, D. Lee, B. Li and I. Ahmad, "Effect of Growth Conditions on the Performance of Vertically Conducting β-Ga2O3 Diodes on 4H-SiC Substrate," 2025 IEEE 34st Microelectronics Design & Test Symposium (MDTS), Albany, NY, USA, 2025, pp. 1-6, doi: 10.1109/MDTS64924.2025.11177119.

[83]    Kai Fu, "Wide Bandgap Semiconductors for High Temperature Applications," Utah Symposium, Aug 1, Salt Lake City, Utah. (Oral)

[82]    Imteaz Rahaman, Botong Li, Hunter D. Ellis, Michael A. Scarpulla, and Kai Fu, "Seed-Driven Stepwise Crystallization for Phase Control in Growing Rutile GeO2 Films by MOCVD," GOX 2025, Aug 4-6, Salt Lake City, Utah. (Oral)

[81]    Imteaz Rahaman, Botong Li, Hunter D. Ellis, Michael A. Scarpulla, and Kai Fu, "Advanced MOCVD Growth and TEM Analysis of Rutile GeO2," GOX 2025, Aug 4-6, Salt Lake City, Utah. (Poster)

[80]    Hunter Ellis, Imteaz Rahaman, Jared Miller, Ajayyvarman Mallapillai, Apostoli Hillas, Vikren Sarkar, Kai Fu, "Evaluation of a β-Ga2O3 MSM Detectors for Proton Therapy," GOX 2025, Aug 4-6, Salt Lake City, Utah. (Oral)

[79]    Hunter Ellis, Botong Li, Wei Jia, Haoyu Xie, Jichao Fan, Weilu Gao, Kai Fu, "Thermal Degradation and Performance Enhancement of β-Ga2O3 Diodes Using CNT/Ga2O3 Heterojunctions ," GOX 2025, Aug 4-6, Salt Lake City, Utah. (Oral)

[78]    Botong Li, Imteaz Rahaman, Bobby Duersch, Hunter D. Ellis, Kai Fu, "Nucleation and Evolution of GeO2 Grown on Sapphire Substrates by MOCVD," GOX 2025, Aug 4-6, Salt Lake City, Utah. (Poster)

[77]    Botong Li, Imteaz Rahaman, Bobby Duersch, Hunter D. Ellis, Kai Fu, "In- situ Study of Crystal Quality and Phase Transition of Ga2O3 and GeO2 at High Temperatures up to 1000 C by XRD," GOX 2025, Aug 4-6, Salt Lake City, Utah. (Poster)

[76]    Hunter Ellis, Imteaz Rahaman, Apostoli Hillas,Vikren Sarkar, Kai Fu, "Ga2O3 as a Radiation-Hard Material for Enhanced Proton Detection in Proton Therapy," Fall 2024 meeting of the Rocky Mountain Chapter of the AAPM, Nov 9, 2024, Colorado Springs, Colorado.

[75]    Imteaz Rahaman, Mike Scarpulla, Kai Fu, “Exploring Growth of GeO2 using TMGe and TEGe Precursors by MOCVD”, GOX, 2024.

[74]    Kai Fu, “(Invited) Wide Bandgap Semiconductor Homoand Hetero-P-N Junctions”, 245th ECS Meeting, San Francisco, CA (May 26 - 30, 2024).

[73]    Imteaz Rahaman, Mike Scarpulla, Kai Fu, “Growth of GeO2 via MOCVD: Transition from Amorphous to Polycrystalline,” The 21st International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE XXI), May 12-17, 2024, Las Vegas, Nevada.

[72]    Xie, Qingyun, et al. "Towards DTCO in high temperature GaN-on-Si technology: Arithmetic logic unit at 300 C and CAD framework up to 500 C." 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits). IEEE, 2023.

[71]    H. Ellis and K. Fu, “Design of 10 Kv P-Diamond/I-Ga2O3/N-Ga2O3Power Pn Diodes”, GOX, 2023.

[70]    Qingyun Xie, Mengyang Yuan1, John Niroula, Bejoy Sikder, Shisong Luo, Kai Fu, Nitul S. Rajput, Ayan Biswas Pranta, Pradyot Yadav, Yuji Zhao, Nadim Chowdhury, and Tomás Palacios, “Towards DTCO in High Temperature GaN-on-Si Technology: Arithmetic Logic Unit at 300 °C and CAD Framework up to 500 °C”, 2023 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA).

[69]    Kai Fu, Tsung-Han Yang, Jesse Brown, Jingan Zhou, Kevin Hatch, Chen Yang, Jossue Montes, Xin Qi, Houqiang Fu, Robert J. Nemanich, and Yuji Zhao, “AlGaN/GaN MISHEMTs with BN as Gate Dielectric Deposited by ECR-MPCVD,” 2022 Compound Semiconductor Week (CSW 2022), May 2022, Poster Presentation.

[68]    Kai Fu, Chen Yang, Jingan Zhou, Tsung-Han Yang, Jossue Montes, Houqiang Fu, and Yuji Zhao, “GaN Vertical p-n Diodes with Avalanche Capability through Hydrogen Plasma Based Edge Termination,” 2021 Compound Semiconductor Week (CSW 2021), May 2021, online meeting, Oral Presentation.

[67]    P. R. Peri, K. Hatch, D. Messina, K. Fu, Y. Zhao, R. Nemanich, and D. Smith, “Plasma enhanced atomic layer etched and regrown GaN-on-GaN high power p-n diodes,” 2020 Microscopy & Microanalysis Meeting (M&M 2020), Aug 2020, Milwaukee, WI, Oral Presentation. (Online presentation due to COVID-19). 

- Selected for 2020 M&M Student Scholar Award

[66]    J. Montes, H. Fu, H. Chen, X. Huang, T. H. Yang, K. Fu, C. Yang, J. Zhou, X. Qi, X. Deng, and Y. Zhao, “Examining deep-level defects in (-201) β-Ga2O3 by deep level transient spectroscopy,” The 62nd Electronic Materials Conference (EMC 2020), Jun 2020, Columbus, OH, Oral Presentation. (Online presentation due to COVID-19).

[65]    K. Fu, H. Fu, X. Huang, H. Chen, T. H. Yang, J. Montes, C. Yang, J. Zhou, X. Qi, X. Deng, and Y. Zhao, “1.27 kV etch-then-regrow GaN p-n junctions with low leakage for GaN power electronics,” The 62nd Electronic Materials Conference (EMC 2020), Jun 2020, Columbus, OH, Oral Presentation. (Online presentation due to COVID-19).

[64]    T. H. Yang, K. Fu, H. Fu, C. Yang, J. Montes, X. Huang, H. Chen, J. Zhou, and Y. Zhao, “The investigation of vertical GaN Schottky barrier diode with floating metal guard rings,” The 62nd Electronic Materials Conference (EMC 2020), Jun 2020, Columbus, OH, Oral Presentation. (Online presentation due to COVID-19).

[63]    X. Huang, D. Li, P.Y. Su, H. Fu, H. Chen, K. Fu, T. H. Yang, J. Montes, C. Yang, J. Zhou, X. Qi, X. Deng, S. P. DenBaars, S. Nakamura, F. Ponce, C. Z. Ning, and Y. Zhao, “Carrier localization and dynamics of nonpolar m-plane InGaN/GaN MQWs at elevated temperatures,” The 62nd Electronic Materials Conference (EMC 2020), Jun 2020, Columbus, OH, Oral Presentation. (Online presentation due to COVID-19).

[62]    H. Fu, K. Fu, S. R. Alugubelli, C. Y. Cheng, X. Huang, H. Chen, T. H. Yang, C. Yang, J. Zhou, J. Montes, X. Deng, X. Qi, S. M. Goodnick, F. A. Ponce, and Y. Zhao, “Novel hydrogen-plasma based guard rings for high voltage vertical GaN-on-GaN p-n diodes,” The 62nd Electronic Materials Conference (EMC 2020), Jun 2020, Columbus, OH, Poster Presentation. (Online presentation due to COVID-19).  

[61]    J. Zhou, H. Chen, H. Fu, K. Fu, X. Deng, X. Huang, T. H. Yang, J. A. Montes, C. Yang, X. Qi, B. Zhang, X. Zhang, and Y. Zhao, “Demonstration of low loss β-Ga2O3 optical waveguides in the UV–NIR spectra,” 2020 CLEO, May 2020, San Jose, CA, Poster Presentation. (Online presentation due to COVID-19).

[60]    H. Fu, K. Fu, C. Yang, H. Liu, K. A. Hatch, S. R. Alugubelli, P. Y. Su, D. C. Messina, X. Deng, B. Li, P. R. Peri, C. Y. Cheng, X. Huang, H. Chen, D. J. Smith, S. M. Goodnick, E. T. Yu, J. Han, R. J. Nemanich, F. A. Ponce, and Y. Zhao, “Recent progress on selective area regrowth and doping for vertical GaN power transistors,” 2020 Compound Semiconductor Week (CSW 2020) and the 47th International Symposium on Compound Semiconductors (ISCS 2020), May 2020, Stockholm, Sweden, Oral Presentation. (canceled due to COVID-19).

[59]    C. Yang, H. Fu, V. N. Kumar, K. Fu, H. Liu, X. Huang, J. Montes, T. H. Yang, H. Chen, J. Zhou, X. Deng, F. A. Ponce, D. Vasileska, and Y. Zhao, “Normally-off GaN vertical-channel junction field-effect transistors with regrown p-GaN by MOCVD,” 2020 MRS Spring Meeting, Apr 2020, Phoenix, AZ, Oral Presentation. (canceled due to COVID-19).

[58]    J. Montes, H. Fu, H. Chen, X. Huang, T. H. Yang, K. Fu, C. Yang, J. Zhou, X. Qi, X. Deng, and Y. Zhao, “Examining deep-level defects in (-201) β-Ga2O3 by deep level transient spectroscopy,” 2020 MRS Spring Meeting, Apr 2020, Phoenix, AZ, Oral Presentation. (canceled due to COVID-19).

[57]    H. Fu, K. Fu, S. R. Alugubelli, C. Y. Cheng, X. Huang, H. Chen, T. H. Yang, C. Yang, J. Zhou, J. Montes, X. Deng, X. Qi, S. M. Goodnick, F. A. Ponce, and Y. Zhao, “KV-class GaN power p-n diodes with plasma-based guard rings,” 2020 MRS Spring Meeting, Apr 2020, Phoenix, AZ, Oral Presentation. (canceled due to COVID- 19).

[56]    J. Zhou, H. Chen, H. Fu, K. Fu, X. Deng, X. Huang, T. H. Yang, J. A. Montes, C. Yang, X. Qi, B. Zhang, X. Zhang, and Y. Zhao, “Demonstration of low loss β-Ga2O3 optical waveguides in the UV–visible spectra,” 2020 MRS Spring Meeting, Apr 2020, Phoenix, AZ, Oral Presentation. (canceled due to COVID-19).

[55]    X. Huang, D. Li, H. Fu, P. Su, H. Chen, K. Fu, S. P. DenBaars, S. Nakamura, F. Ponce, C. Z. Ning, and Y. Zhao, “High temperatures carrier dynamics of nonpolar InGaN/GaN MQWs,” 2020 MRS Spring Meeting, Apr 2020, Phoenix, AZ, Poster Presentation. (canceled due to COVID-19).

[54]    K. Fu, H. Fu, X. Huang, H. Chen, T. H. Yang, J. Montes, C. Yang, J. Zhou, X. Qi, X. Deng, and Y. Zhao, “Etchthen-regrow vertical GaN p-n diodes with high breakdown voltage and low leakage current,” 2020 MRS Spring Meeting, Apr 2020, Phoenix, AZ, Poster Presentation. (canceled due to COVID-19).

[53]    P. Peri, K. Fu, Y. Zhao, and D. J. Smith, “Characterization of etched and grown GaN-GaN Schottky diodes,” 2019 Microscopy & Microanalysis Meeting (M&M 2019), Aug 2019, Portland, OR, Poster Presentation.

[52]    H. Fu, K. Fu, H. Liu, S. R. Alugubelli, F. A. Ponce, and Y. Zhao, “Effective selective area doping for GaN vertical power transistors enabled by epitaxial regrowth,” The 19th International Conference on Crystal Growth and Epitaxy (ICCGE-19) and the 19th US Biennial Workshop on Organometallic Vapor Phase Epitaxy (OMVPE-19), Jul 2019, Keystone, CO, Oral Presentation.

[51]    H. Chen, H. Fu, X. Huang, J. Zhou, T. H. Yang, K. Fu, J. Montes, C. Yang, and Y. Zhao, “Supercontinuum generation from dispersion engineered AlN waveguide arrays,” The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Jul 2019, Bellevue, WA, Oral Presentation.

[50]    H. Fu, K. Fu, H. Liu, S. R. Alugubelli, X. Huang, H. Chen, J. Montes, T. H. Yang, C. Yang, J. Zhou, F. A. Ponce, and Y. Zhao, “High voltage implantation-free vertical GaN power p-n diodes with a novel low-temperature plasma-based planar edge termination,” The 13th International Conference on Nitride Semiconductors 2019 (ICNS- 13), Jul 2019, Bellevue, WA, Oral Presentation.

[49]    K. Fu, H. Fu, X. Huang, H. Chen, T. H. Yang, J. Montes, C. Yang, J. Zhou, and Y. Zhao, “Threshold switching and memory behaviors of GaN-on-GaN regrown vertical p-n diodes with high temperature stability,” The 13th International Conference on Nitride Semiconductors (ICNS-13), Jul 2019, Bellevue, WA, Oral Presentation.

[48]    C. Yang, J. Montes, H. Fu, T. H. Yang, K. Fu, H. Chen, J. Zhou, X. Huang, and Y. Zhao, “Demonstration of mechanically exfoliated β-Ga2O3/GaN p-n heterojunction,” The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Jul 2019, Bellevue, WA, Oral Presentation.

[47]    H. Chen, J. Zhou, T. H. Yang, H. Fu, J. Montes, X. Huang, K. Fu, J. Montes, C. Yang, and Y. Zhao, “Study of optical scattering loss induced by crystalline defects inside AlN waveguides using volume current method,” The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Jul 2019, Bellevue, WA, Oral Presentation.

[46]    X. Huang, D. Li, H. Fu, H. Chen, K. Fu, C. Yang, T. H. Yang, J. Zhou, J. Montes, S. P. DenBaars, S. Nakamura, C. Z. Ning, and Y. Zhao, “Carrier dynamics of nonpolar and polar InGaN/GaN MQWs at high temperatures,” The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Jul 2019, Bellevue, WA, Oral Presentation.

[45]    J. Montes, H. Fu, T. H. Yang, H. Chen, X. Huang, K. Fu, I. Baranowski, and Y. Zhao, “Effects of 3 MeV proton radiation on ultrawide bandgap aluminum nitride Schottky barrier diodes,” The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Jul 2019, Bellevue, WA, Poster Presentation.

[44]    X. Huang, R. Fang, C. Yang, K. Fu, H. Fu, H. Chen, T. H. Yang, J. Zhou, J. Montes, M. Kozicki, H. Barnaby, B. Zhang, and Y. Zhao, “Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide based threshold switching device,” The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Jul 2019, Bellevue, WA, Poster Presentation.

[43]    H. Liu, S. R. Alugubelli, P. Y. Su, H. Fu, K. Fu, Y. Zhao, and F. A. Ponce, “Nonuniform Mg doping in GaN epilayers grown on mesa structures,” The 13th International Conference on Nitride Semiconductors 2019 (ICNS- 13), Jul 2019, Bellevue, WA, Oral Presentation.

[42]    S. R. Alugubelli, H. Fu, K. Fu, H. Liu, Y. Zhao, and F. A. Ponce, “Dopant profiling in p-i-n GaN high power devices using secondary electrons,” The 13th International Conference on Nitride Semiconductors 2019 (ICNS- 13), Jul 2019, Bellevue, WA, Oral Presentation.

[41]    S. R. Alugubelli, H. Fu, K. Fu, H. Liu, Y. Zhao, and F. A. Ponce, “Electronic band structure of etch-andregrowth interface in p-i-n GaN films using electron holography,” The 13th International Conference on Nitride Semiconductors 2019 (ICNS-13), Jul 2019, Bellevue, WA, Poster Presentation.

[40]    K. A. Hatch, D. Messina, H. Fu, K. Fu, X. Wang, M. Hao, Y. Zhao, and R. J. Nemanich, “ALE of GaN (0001) for removal of etch-induced damage,” The 13th International Conference on Nitride Semiconductors 2019 (ICNS- 13), Jul 2019, Bellevue, WA, Poster Presentation.

[39]    H. Chen, J. Zhou, H. Fu, X. Huang, T. S. Yang, K. Fu, J. Montes, C. Yang, and Y. Zhao, “Supercontinuum generation from dispersion engineered AlN nanophotonics waveguide arrays,” CLEO 2019, May 2019, San Jose, CA, Oral Presentation.

[38]    H. Chen, J. Zhou, H. Fu, X. Huang, and Y. Zhao, “Study of Crystalline defect induced optical scattering loss inside AlN waveguides in UV-Visible spectral wavelengths,” CLEO 2019, May 2019, San Jose, CA, Poster Presentation.

[37]    K. Fu, H. Fu, H. Liu, S. R. Alugubelli, X. Huang, H. Chen, T. H. Yang, J. Montes, C. Yang, J. Zhou, F. A. Ponce, and Y. Zhao, “1.2 kV regrown GaN vertical p-n power diodes with ultra low leakage using advanced materials engineering,” 2019 Compound Semiconductor Week (CSW 2019) and the 46th International Symposium on Compound Semiconductors (ISCS 2019), May 2019, Nara, Japan, Oral Presentation (Late News).

[36]    K. Fu, H. Fu, X. Huang, T. H. Yang, H. Chen, J. Montes, C. Yang, J. Zhou, and Y. Zhao, “Threshold and resistive switching behaviors in epitaxially regrown GaN P-N diodes for high temperature applications,” 2019 Compound Semiconductor Week (CSW 2019) and the 46th International Symposium on Compound Semiconductors (ISCS 2019), May 2019, Nara, Japan, Poster Presentation.

[35]    K. Fu, H. Fu, H. Liu, S. R. Alugubelli, T. H. Yang, X. Huang, H. Chen, I. Baranowski, J. Montes, F. A. Ponce, and Y. Zhao, “Investigation of GaN-on-GaN vertical p-n diode with regrown p-GaN by metalorganic chemical vapor deposition,” 2019 MRS Spring Meeting, Apr 2019, Phoenix, AZ, Oral Presentation.

[34]    T. H. Yang, H. Fu, H. Chen, X. Huang, J. Montes, I. Baranowski, K. Fu, and Y. Zhao, “The study on inhomogeneity of Ga2O3 Schottky barrier diodes by modified thermionic emission model,” 2019 MRS Spring Meeting, Apr 2019, Phoenix, AZ, Oral Presentation.

[33]    H. Fu, K. Fu, X. Huang, H. Chen, T. H. Yang, J. Montes, C. Yang, J. Zhou, and Y. Zhao, “Observation of threshold and resistive switching behaviors in epitaxially regrown GaN p-n diodes by MOCVD,” 2019 MRS Spring Meeting, Apr 2019, Phoenix, AZ, Poster Presentation (Late News).

[32]    S. R. Alugubelli, H. Fu, K. Fu, H. Liu, Y. Zhao, and F. A. Ponce, “Dopant profiling using low-voltage SEM for GaN power electronics,” 2019 MRS Spring Meeting, Apr 2019, Phoenix, AZ, Poster Presentation.

[31]    H. Liu, H. Fu, K. Fu, S. R. Alugubelli, P.-Y. Su, Y. Zhao, and F. A. Ponce, “Non-uniform Mg doping in GaN epilayers on mesa structures,” 2019 MRS Spring Meeting, Apr 2019, Phoenix, AZ, Poster Presentation.

[30]    K. A. Hatch, K. Fu, H. Fu, J. Brown, D. C. Messina, X. Wang, M. Hao, Y. Zhao, and R.J. Nemanich, “Atomic layer etching for selective area doping of GaN,” 2018 MRS Fall Meeting, Nov 2018, Boston, MA, Poster Presentation.

[29]    Y. Zhao, J. Montes, H. Fu, K. Fu, X. Huang, H. Chen, T. H. Yang, and I. Baranowski, “Progress on radiation effects in ultra-wide bandgap AlN Schottky barrier diodes,” 2018 IEEE Nuclear and Space Radiation Effects Conference (IEEE NSREC 2018), Jul 2018, Kona, HI, Poster Presentation.

[28]    X. Huang, H. Fu, H. Chen, I. Baranowski, J. Montes, T. H. Yang, K. Fu, B. P. Gunning, D. Koleske, and Y. Zhao, “Thermal reliability analysis of InGaN MQW solar cells,” 2018 Compound Semiconductor Week (CSW 2018) and the 45th International Symposium on Compound Semiconductors (ISCS 2018), May 2018, Boston, MA, Oral Presentation.

[27]    X. Huang, H. Fu, H. Chen, I. Baranowski, J. Montes, T. H. Yang, K. Fu, B. P. Gunning, D. Koleske, and Y. Zhao, “Band engineering of InGaN/GaN multiple-quantum-well (MQW) solar cells,” 2018 Compound Semiconductor Week (CSW 2018) and the 45th International Symposium on Compound Semiconductors (ISCS 2018), May 2018, Boston, MA, Oral Presentation.

[26]    K. Fu, R. Hao, B. Zhang, and Y. Zhao, “Normally-off p-GaN/AlGaN/GaN HEMTs by hydrogen plasma treatment,” 2018 Compound Semiconductor Week (CSW 2018) and the 45th International Symposium on Compound Semiconductors (ISCS 2018), May 2018, Boston, MA, Oral Presentation.

[25]    J. Montes, H. Fu, T. H. Yang, H. Chen, X. Huang, I. Baranowski, K. Fu, and Y. Zhao, “Gamma-ray and proton radiation effects in AlN Schottky barrier diodes,” 2018 Compound Semiconductor Week (CSW 2018) and the 45th International Symposium on Compound Semiconductors (ISCS 2018), May 2018, Boston, MA, Poster Presentation.

[24]    Baranowski, H. Chen, H. Fu, J. Montes, K. Fu, T. H. Yang, X. Huang, and Y. Zhao, “Thermal performance of silicon dioxide conduction blocking layers in GaN VHEMT devices,” 2018 Compound Semiconductor Week (CSW 2018) and the 45th International Symposium on Compound Semiconductors (ISCS 2018), May 2018, Boston, MA, Poster Presentation.

[23]    T. H. Yang, H. Fu, X. Huang, H. Chen, J. Montes, I. Baranowski, K. Fu, and Y. Zhao, “Temperature-dependent electrical properties of beta-Ga2O3 Schottky barrier diodes on highly doped single-crystal substrates and their reverse current leakage mechanisms,” 2018 Compound Semiconductor Week (CSW 2018) and the 45th International Symposium on Compound Semiconductors (ISCS 2018), May 2018, Boston, MA, Poster Presentation.

[22]    L. Song, K. Fu, G.Yu, R. Hao, J. Yuan, Y. Cai, B. Zhang, “Degradation of AlGaN/GaN MIS-HEMTS with off-state electrical bias,” 8th Asia-Pacific Workshop on Widegap Semiconductors (APWS2017), Sep. 2017, Qingdao, Shandong, China.

[21]    K. Fu, “(invited) E-mode p-GaN/AlGaN/GaN HEMT based on hydrogen plasma,” 2nd “Green Chip” Academic Salon, May 2017, Dongwan, China, Oral Presentation. 

[20]    K. Fu, Z. Zhang, W. Li, L. Song, G. Yu, Y. Cai, B. Zhang, “Improvement of dynamic performance of AlGaN/GaN MIS-HEMTs by surface pre-treatment,” 2nd National Wide Bandgap Semiconductor Academic Conference, Aug. 2017, Xining, China, Poster Presentation.

[19]    X. Zhang, Z. Zhang, W. Li, L. Song, X. Deng, R. Hao, K. Fu, G. Yu, Y. Fan, G. Pan, Y. Cai, and B. Zhang, “Normally-off AlGaN/GaN MIS-HEMTs by Ionic Liquid Wet Etching and LPCVD-Si3N4 Gate Insulator,” 2nd National Wide Bandgap Semiconductor Academic Conference, Aug. 2017, Xining, China, Oral Presentation.

[18]    M. Hua, Z. Zhang, J. Wei, J. Lei, G. Tang, K. Fu, Y. Cai, B. Zhang and K. J. Chen, “Integration of LPCVD-SiNx Gate Dielectric with Recessed-gate E-mode GaN MIS-FETs: Toward High Performance, High Stability and Long TDDB Lifetime,” 62nd International Electron Devices Meeting (IEDM), 2016, San Francisco.

[17]    K. Fu, R. Hao, G. Yu, Y. Cai, X. Zhang, B. Zhang, “E-mode p-GaN/AlGaN/GaN HEMT based on hydrogen plasma,” 2nd National Symposium on New Semiconductor Power Devices and Application Technology, Nov. 2016, Kunming, China, Oral Presentation.

[16]    L. Song, K. Fu, G. Yu, Z. Zhang, S. Sun, X. Deng, Y. Cai, and B. Zhang, “AlGaN/GaN HEMT with low current collapse by optimizing LPCVD-SiNx passivation,” 2nd National Symposium on New Semiconductor Power Devices and Application Technology, Nov. 2016, Kunming, China, Oral Presentation.

[15]    S. Sun, K. Fu, G. Yu, X. Deng, J. Yuan, Z. Zhang, L. Song, J. Dai, C. Chen, Y. Cai, and B. Zhang, “MOCVD epitaxy growth and device study of vertical AlGaN/GaN HEMT with P-GaN as current barrier layer,” 2nd National Symposium on New Semiconductor Power Devices and Application Technology, Nov. 2016, Kunming, China, Poster Presentation.

[14]    Z. Zhang, W. Li, K. Fu, G. Yu, S. Sun, L. Song, Y. Cai, and B. Zhang, “High-performance AlGaN/GaN MIS-HEMTs based on in-situ plasma treatment and gate dielectric of LPCVD-SiNx,” 10th China Semiconductor Industry Association Semiconductor Discrete Devices Branch Annual Meeting and 2016’ National Symposium on Semiconductor Device Industry Development, Innovative Products and New Technology, Jul. 2016, Jilin, China, Oral Presentation. 

[13]    W. Li, Z. Zhang, K. Fu, G. Yu, S. Sun, L. Song, Y. Cai, and B. Zhang, “Design and simulation of a new E-mode GaN MIS-HEMT to suppress the electric field under the gate and improve its reliability,” 10th China Semiconductor Industry Association Semiconductor Discrete Devices Branch Annual Meeting and 2016’ National Symposium on Semiconductor Device Industry Development, Innovative Products and New Technology, Jul. 2016, Jilin, China, Oral Presentation. 

- Excellent Paper Award

[12]    X. Li, G. Yu, K. Fu, S. Sun, L. Song, Y. Cai, and B. Zhang, “Improvement of GaN ohmic contact by pre-treatment method,” 10th China Semiconductor Industry Association Semiconductor Discrete Devices Branch Annual Meeting and 2016’ National Symposium on Semiconductor Device Industry Development, Innovative Products and New Technology, Jul. 2016, Jilin, China, Oral Presentation.

[11]    M. Hua, C. Liu, S. Yang, S. Liu, Y. Lu, K. Fu, Z. Dong, Y. Cai, B. Zhang, and K. J. Chen, “650-V GaN-Based MIS-HEMTs Using LPCVD-SiNx as Passivation and Gate Dielectric,” 27th International Symposium on Power Semiconductor Devices & Ic's (ISPSD), 2015, Hong Kong, China. 

[10]    K. Fu, G. Yu, Z. Zhang, X. Zhang, Y. Cai and B. Zhang, “Fabrication and Characterization of High Breakdown Voltage Enhancement-Mode AlGaN/GaN MIS-HEMTs on Silicon Substrates,” 11th International Conference on Nitride Semiconductors (ICNS), 2015, Beijing, China, Oral Presentation.

[9]    L. Song, K. Fu, Z. Zhang, S. Sun, G. Yu, Y. Cai, and B. Zhang, “Influence of SiNx thickness under field plate on current collapse of AlGaN/GaN HEMT,” 1st National Wide Bandgap Semiconductor Academic Conference, Oct. 2015, Suzhou, China, Oral Presentation.

[8]    S. Sun, K. Fu, G. Yu, Z. Zhang, L. Song, C. Chen, Y. Cai, and B. Zhang, “Influence of field ring by F ion implantation on the high performance of AlGaN/GaN HEMTs,” 1st National Wide Bandgap Semiconductor Academic Conference, Oct. 2015, Suzhou, China, Oral Presentation.

[7]    Z. Zhang, Y. Cai, G. Yu, K. Fu, X. Zhang, S. Sun, L. Song, and B. Zhang, “Research on E-mode MIS-HEMTs by F ion implantation,” 1st National Wide Bandgap Semiconductor Academic Conference, Oct. 2015, Suzhou, China, Oral Presentation.

[6]    L. Song, K. Fu, Z. Zhang, G. Yu, S. Sun, S. Tan, Y. Cai, and B. Zhang, “High-performance AlGaN/GaN MIS-HEMT based on optimization of field plate,” 9th China Semiconductor Industry Association Semiconductor Discrete Devices Branch Annual Meeting and 2015’ National Symposium on Semiconductor Device Industry Development, Innovative Products and New Technology, Jul. 2015, Chengdu, China, Oral Presentation.

[5]    S. Sun, K. Fu, G. Yu, Z. Zhang, L. Song, C. Chen, Y. Cai, and B. Zhang, “The influence of the thickness of LPCVD-SiNx on the performance of AlGaN/GaN MIS-HEMT,” 9th China Semiconductor Industry Association Semiconductor Discrete Devices Branch Annual Meeting and 2015’ National Symposium on Semiconductor Device Industry Development, Innovative Products and New Technology, Jul. 2015, Chengdu, China, Oral Presentation. 

- Excellent Paper Award

[4]    Z. Zhang, Y. Cai, G. Yu, K. Fu, X. Zhang, S. Sun, L. Song, and B. Zhang, “E-mode MIS-HEMT achieved by F ion implantation,” 9th China Semiconductor Industry Association Semiconductor Discrete Devices Branch Annual Meeting and 2015’ National Symposium on Semiconductor Device Industry Development, Innovative Products and New Technology, Jul. 2015, Chengdu, China, Oral Presentation.

[2]    K. Fu, S. Tan, Z. Zhang, G. Yu, Y. Cai, and B. Zhang, “Influence of SiNx dielectric on the leakage and transfer characteristics of AlGaN/GaN HEMT,” 8th China Semiconductor Industry Association Semiconductor Discrete Devices Branch Annual Meeting and 2014’ National Symposium on Semiconductor Device Industry Development, Innovative Products and New Technology, 2014, Taiyuan, Shanxi, China, Oral Presentation. 

- Excellent Paper Award

[2]    K. Fu, H. Li, Y. Cai, M. Xiong, W. Tian, T. Wang, C. Chen, and B. Zhang, “Design and optical characterization of GaN/AlGaN superlattices for infrared detectors,” Nanoelectronics and Nanophotonics Workshop, 2013, Hong Kong, China, Poster Presentation.

[1]    K. Fu, G. Yu, M. Lu, “Time Response of GaN Schottky Detector for X Ray Detection,” 6th Academic Exchange of Nuclear Technology Application of Beijing Nuclear Society and the National Academic Seminar of Nuclear Technology and Industrial Application of Radiation, 2010, Suzhou, China, Oral Presentation. 

- Outstanding Youth Science and Technology Paper Award