Spin-orbit torques

Spin-Orbit Torque-Magnetic Random Access Memory (SOT-MRAM) is a fast, Non-Volatile Memory (NVM) being developed to replace current generation of CMOS based memories such as eFlash. These memories rely on the SOTs generated when a current flows in a Normal Metal (NM) with a large spin-orbit coupling, such as platinum. These torques act on the Ferro-Magnet (FM) adjacent to this layer, switching the orientation of the magnetization. This forms the write process of SOT-MRAMs. In this work, we use second harmonic torque measurements to quantify these SOTs in order to uncover the underlying mechanisms and be able to engineer it for utilization in SOT-MRAMs.

• J. Nath, A. V. Trifu, M. Gabor, A. Hallal, S. Auffret, S. Labau, A. Mahjoub, E. Chan, A. V. Chaurasiya, A. K. Mondal, H. Yang, E. Schmoranzerova, M. A. Nsibi, I. Joumard, A. Barman, B. Pelissier, M. Chshiev, G. Gaudin, I. M. Miron, “Mechanism of spin-orbit torques in platinum oxide systems," (in preparation).

• M. S. Gabor, T. Petrisor Jr., M. Nasui, M. A. Nsibi, J. Nath, I. M. Miron, “Spin-Orbit Torques and Magnetization Switching in Epitaxial Pd/Co₂FeAl/MgO Structures,” Phys. Rev. Appl., Vol. 13, 054039, 2020.

• R. Juge, S.-G. Je, D. de S. Chaves, L. D. Buda-Prejbeanu, J. Peña-Garcia, J. Nath, I. M. Miron, K. G. Rana, L. Aballe, M. Foersterm F. Genuzio, T. O. Mentes, A. Locatelli, F. Maccherozzi, S. S. Dhesi, M. Belmeguenai, Y. Roussigné, S. Auffret, S. Pizzini, G. Gaudin, J. Vogel, O. Boulle, “Current-driven dynamics of magnetic skyrmions in ultrathin nanostructures: experiments and modelling,” Phys. Rev. Appl., Vol. 12, 044007, 2019.