Nanosheet MOSFETs are being developed as a potential successor to traditional planar MOSFETs due to the challenges of scaling down the size of planar MOSFETs. The primary advantage of nanosheet MOSFETs is that they can provide better electrostatic control over the channel, which can improve performance and reduce leakage current. Additionally, the gate-all-around (GAA) structure of nanosheet MOSFETs allows for better gate control over the channel, increased effective channel width over FinFET, reduced short-channel effects, and improved transistor characteristics.
The short-channel effects and analog performance with different physical factors are being studied through TCAD simulation.
β-Ga2O3 MOSFETs have a wide bandgap of 4.8 eV, which enables them to operate at high voltages and temperatures. They also have a high breakdown voltage, high electron mobility, and high electron saturation velocity, making them suitable for power-switching applications. But due to the absence and complexity of p-type doping for β-Ga2O3, designing a normally off device is a major challenge. Numerous researchers have recently put forth various types of strategies to address this problem and various types of structures to develop enhancement mode devices.
In this work, we are trying to design and analyze an enhancement mode β-Ga2O3 MOSFET and improve its performance parameters through TCAD. A recessed gate structure with a thin β-Ga2O3 channel on a Fe-doped semi-insulating substrate is being used to get a positive threshold voltage. We are modeling the structure with different physical models and analyzing the results through Silvaco TCAD.
Metalenses have a wide range of potential applications, including in imaging, sensing, and communication systems. Understanding how TiO2 nanorods can enhance the performance of metalenses opens doors to innovative optical technologies. The primary goal of this study is to design and analyze a metalens that employs TiO2 nanorods to manipulate the propagation of light.
In this study, we are utilizing hyperuniform random TiO2 nanorods to achieve the required phase shift and compared the results with those of uniformly distributed TiO2 nanorod metalens.