Journal
2024
Yunsur Kim, Hyejin Kim, Seonuk Jeon, Hyun Wook Kim, Eunryeong Hong, Nayeon Kim, Hyeonsik Choi, Hyoungjin Park, Jiae Jeong, Daeseok Lee, and Jiyong Woo, “Linear Synaptic Weight Update in Selector-less HfO2 RRAM Using Al2O3 Built-in-Resistor for Neuromorphic Computing Systems,” IEEE Transactions on Electron Devices, vol. , no. , 2024.
Dong Hyeop Shin, Seung Joo Myoung, Donguk Kim, Changwook Kim, Jong-Ho Bae, Sung-Jin Choi, Dong Myong Kim, Jiyong Woo, Dae Hwan Kim, “Effect of RF power on analog synaptic behavior of sputter-deposited InGaZnO films for neuromorphic computing applications,” Ceramics International, vol. , no. , 2024.
Jiae Jeong, Hyoungjin Park, Nayeon Kim, Hyun Wook Kim, Eunryeong Hong, Hyeonsik Choi, Seonuk Jeon, Yunsur Kim, and Jiyong Woo, “Dual Ferroelectric Stack of HfZrO2/Al:HfO2 with Tunable Coercive Voltage for High-density Memory Applications,” IEEE Transactions on Electron Devices, vol. 71, no. 6, 2024.
Hyoungjin Park, Jiae Jeong, Hyun Wook Kim, Eunryeong Hong, Nayeon Kim, Seonuk Jeon, Yunsur Kim, Hyeonsik Choi, and Jiyong Woo, “Effect of the number and distribution of Al2O3 atomiclayer deposition cycles within HfO2 layer on ferroelectric characteristics,” Applied Physics Letters, vol. 124, no. 13, 2024.
Seonuk Jeon, Nir Tessler, Nayeon Kim, Eunryeong Hong, Hyun Wook Kim, and Jiyong Woo, "Strategy to improve synaptic behavior of ion-actuated synaptic transistors - the use of ion blocking layer to improve state retention," Scientific Reports, vol. 14, no. 5030, 2024.
Tae Jun Yang, Jung Rae Cho, Hyunkyu Lee, Hee Jun Lee, Seung Joo Myoung, Da Yeon Lee, Sung-Jin Choi, Jong-Ho Bae, Dong Myong Kim, Changwook Kim, Jiyong Woo, and Dae Hwan Kim, "Improvement of the Symmetry and Linearity of Synaptic Weight Update by Combining the InGaZnO Synaptic Transistor and Memristor," IEEE Access, vol. 12, 2024.
Hyunjeong Kwak, Nayeon Kim, Seonuk Jeon, Seyoung Kim, and Jiyong Woo, "Electrochemical Random-access Memory: Recent Advances in Materials, Devices, and Systems Towards Neuromorphic Computing," Nano Convergence, vol. 11, no. 9, 2024.
Eunryeong Hong, Hyun Wook Kim, Hyeonsik Choi, Seonuk Jeon, Nayeon Kim, and Jiyong Woo, "Demonstration of Threshold Switching in Undoped SiOx Layer for Oscillation Neurons," IEEE Transactions on Electron Devices, vol. 71, no. 3, 2024.
Hyeonsik Choi, Hyun Wook Kim, Eunryeong Hong, Nayeon Kim, Seonuk Jeon, Yunsur Kim, and Jiyong Woo, "Role of oxide barrier in a NbOx layer with noninert electrodes for high-yield threshold switching characteristics," AIP Advances, vol. 14, no. 1, 2024.
Hyejin Kim, Geonhui Han, Seojin Cho, Jiyong Woo, and Daeseok Lee, "Internal Resistor Effect of Multilayer-Structured Synaptic Device for Low-Power Operation," nanomaterials, 14, 201, 2024.
2023
Seonuk Jeon, Heebum Kang, Hyunjeon Kwak, Kyungmi Noh, Seungkun Kim, Nayeon Kim, Hyun Wook Kim, Eunryeong Hong, Seyoung Kim, and Jiyong Woo, "WOx channel engineering of Cu-ion-driven synaptic transistor array for low-power neuromorphic computing," Scientific Reports, vol. 13, no. 1, 2023.
Hyeongwook Kim, Jihwan Lee, Hyun Wook Kim, Jiyong Woo, Min-Hwi Kim, and Sin-Hyung Lee, "Definition of a Localized Conducting Path via Suppressed Charge Injection in Oxide Memristors for Stable Practical Hardware Neural Networks," ACS Applied Materials & Interfaces, vol. 15, no. 44, 2023.
Hyejin Kim, Jongseon Seo, Seojin Cho, Seonuk Jeon, Jiyong Woo, and Daeseok Lee, "Three-dimensional vertical structural electrochemical random access memory for high-density integrated synapse device," Scientific Reports, vol. 13, no. 1, 2023.
Hyun Wook Kim, Seung-Youl Kang, Jaehyun Moon, Nayeon Kim, Eunryeong Hong, Seyeong Jeon, Seonuk Jeon, and Jiyong Woo, "Experimental Robust Spontaneous Synchronization in Coupled NbOx Oscillation Neruons for Unconventional Computing," IEEE Transactions on Electron Devices, vol. 70, no. 12, 2023.
Hyun Wook Kim, Seyeong Jeon, Seonuk Jeon, Eunryeong Hong, Nayeon Kim, and Jiyong Woo, "Brain-inspired Mutual Synchronization in Cross-coupled NbOx Oscillation Neurons for Oscillatory Neural Network Applications," IEEE Access, vol. 11, 2023.
Nir Tessler, Nayeon Kim, Heebum Kang, and Jiyong Woo, "Switching Mechanisms of CMOS-Compatible ECRAM Transistors - Electrolyte charging and ion plating," Journal of Applied Physics, vol. 134, no. 7, 2023.
Donguk Kim, Tae Jun Yang, Woo Sik Choi, Hee Jun Lee, Jun Tae Jang, Eunryeong Hong, Woo Young Yang, Min Woo Choi, Ki Yeon Yang, Chang Seung Lee, Jiyong Woo, and Dae Hwan Kim, "Understanding ovonic threshold switching of GeSe chalcogenide materials using electrical methodologies for extracting density of states," Applied Physics Letters, vol. 123, no. 7, 2023.
Seunghee Jin, Juye Jeon, Min Jung Kim, Kiseok Heo, Jeong Hun Kim, Jong-Pil Im, Sung-Min Yoon, Seung Eon Moon, Jiyong Woo, and Jae Woo Lee, "Interrelation between Ferroelectric Properties and Defects Based on Low-frequency Noise Analysis in HZO Ferroelectric Capacitor," Applied Physics Letters, vol. 122, no. 162904, 2023.
Hyun Wook Kim, Seonuk Jeon, Heebum Kang, Eunryeong Hong, Nayeon Kim, and Jiyong Woo, "Understanding Rhythmic Synchronization of Oscillatory Neural Networks Based on NbOx Artificial Neurons for Edge Detection," IEEE Transactions on Electron Devices, vol. 70, no. 6, 2023.
Seonuk Jeon, Eunryeong Hong, Heebum Kang, Hyun Wook Kim, Nayeon Kim, and Jiyong Woo, "Hybrid Precision in Resistive Memory-Based Convolutional Kernel for Fault-Resilient Neuromorphic Systems," IEEE Transactions on Electron Devices, vol. 70, no. 4, 2023.
Eunryeong Hong, Seon Uk Jeon, Nayeon Kim, Hyun Wook Kim, Heebum Kang, Kibong Moon, and Jiyong Woo, "Convolutional kernel with PrCaMnOx-based resistive random access memory for neuromorphic image processing," AIP Advances, vol. 13, no. 015318, 2023.
Donguk Kim, Jun Tae Jang, Changwook Kim, Hyun Wook Kim, Eunryeong Hong, Sanghyun Ban, Minchul Shin, Hanwool Lee, Hyung Dong Lee, Hyun-Sun Mo, Jiyong Woo, and Dae Hwan Kim, "Read Disturbances in Cross-point Phase-change Memory Arrays—Part II: Array Simulations Considering External Currents," IEEE Transactions on Electron Devices, vol. 70, no. 2, 2023.
Donguk Kim, Jun Tae Jang, Changwook Kim, Hyun Wook Kim, Eunryeong Hong, Sanghyun Ban, Minchul Shin, Hanwool Lee, Hyung Dong Lee, Hyun-Sun Mo, Jiyong Woo, and Dae Hwan Kim, "Read Disturbances in Cross-point Phase-change Memory Arrays—Part I: Physical Modeling with Phase-change Dynamics," IEEE Transactions on Electron Devices, vol. 70, no. 2, 2023.
2022
Heebum Kang, Nayeon Kim, Seon Uk Jeon, Hyun Wook Kim, Eunryeong Hong, Seyoung Kim, and Jiyong Woo, "Analysis of Electro-Chemical RAM Synaptic Array for Energy-Efficient Weight Update," Frontiers in Nanotechnology, 4:1034357, 2022.
Donguk Lee, Myonghoon Kwak, Jongwon Lee, Jiyong Woo, and Hyunsang Hwang, "Linear Frequency Modulation of NbO2-based Nanoscale Oscillator with Li-based electro-chemical random access memory for Compact Coupled Oscillatory Neural Network," Frontiers in Neuroscience, 16, 939687, 2022.
Wooseok Choi, Wonjae Ji, Seongjae Heo, Donguk Lee, Kyungmi Noh, Chuljun Lee, Jiyong Woo, Seyoung Kim, and Hyunsang Hwang, "Exploiting Read Current Noise of TiOx RRAM by Controlling Forming Conditions for Probabilistic Neural Network Hardware," IEEE Electron Device Letters, vol. 43, no. 9, 2022.
Nayeon Kim, Heebum Kang, Hyun Wook Kim, Eunryeong Hong, and Jiyong Woo, "Understanding synaptic characteristics of nonvolatile analog redox transistor based on mobile ion-modulated-electrolyte thickness model for neuromorphic applications," Applied Physics Letters, vol. 121, no. 7, 2022.
Yeriaron Kim, Seung Youl Kang, Jiyong Woo, Jeong Hun Kim, Jong-Pil Im, Sung-Min Yoon, and Seung Eon Moon, "Improvement in Nonvolatile Memory Operations for Metal-FerroelectricInsulator-Semiconductor Capacitors Using HfZrO2 and ZrO2 Thin Films as Ferroelectric and Insulator Layers," Journal of Physics D: Applied Physics, 55, 335101, 2022.
Hyun Wook Kim, Heebum Kang, Eunryeong Hong, and Jiyong Woo, "Area and Thickness Scaling of NbOx-Based Threshold Switches for Oscillation Neurons," IEEE Journal of the Electron Devices Society, vol. 10, 397-401, 2022.
Heebum Kang, Jongseon Seo, Hyejin Kim, Hyun Wook Kim, Eun Ryeong Hong, Nayeon Kim, Daeseok Lee, and Jiyong Woo, "Ion-Driven Electrochemical Random-Access Memory-Based Synaptic Devices for Neuromorphic Computing Systems: A Mini-Review," Micromachines, vol. 13, no. 3, 2022.
Heebum Kang, Hyun Wook Kim, Eun Ryeong Hong, and Jiyong Woo, "Analog Synaptic Behavior of Mobile Ion Source-limited Electrochemical RAM Using CuOx Oxide Electrode for Deep Learning Accelerator," Applied Physics Letters, vol. 120, no. 12, 2022.
2021
Heebum Kang, Jinah Park, Dokyung Lee, Hyunwook Kim, Sol Jin, Minjoon Ahn, and Jiyong Woo, "Two- and Three terminal HfO2-Based Multilevel Resistive Memories for Neuromorphic Analog Synaptic Elements," Neuromorphic Computing and Engineering, vol. 1, no. 2, 021001, 2021.
Sangmin Lee, Hyunsang Hwang, and Jiyong Woo, "Hybrid Memory Characteristics of NbOx Threshold Switching Devices," Applied Physics Letters, vol. 119, no. 9, 092102, 2021.
Heebum Kang and Jiyong Woo, "Cu-ion-actuated Three-terminal Neuromorphic Synaptic Devices based on Binary Metal-oxide Electrolyte and Channel," Applied Physics Letters, vol. 119, no. 7, 072103, 2021.
2020
Jiyong Woo, Jeong Hun Kim, Jong-Pil Im, and Seung Eon Moon, "Recent Advancements in Emerging Neuromorphic Device Technologies," Advanced Intelligent Systems, vol. 2, no. 2000111, 2020.
Solyee Im, Seung-Youl Kang, Yeriaron Kim, Jeong Hun Kim, Jong-Pil Im, Sung-Min Yoon, Seung Eon Moon, and Jiyong Woo, "Ferroelectric switching in trilayer Al2O3/HfZrOx/Al2O3 structure," Micromachines, vol. 11, no. 10, 910, 2020.
Jiyong Woo, Tien Van Nguyen, Jeong Hun Kim, Jong-Pil Im, Solyee Im, Yeriaron Kim, Kyeong-Sik Min, and Seung Eon Moon, "Exploiting defective RRAM array as synapses of HTM spatial pooler with boost-factor adjustment scheme for defect-tolerant neuromorphic systems," Scientific Reports, vol. 10, no. 1, 2020.
Yeriaron Kim, Jiyong Woo, Solyee Im, Yeseul Lee, Jeong Hun Kim, Jong-Pil Im, Dongwoo Suh, Sang Mo Yang, Sung-Min Yoon, and Seung Eon Moon, "Optimized annealing conidtions to enhance stability of polarization in sputtered HfZrOx layers for non-volatile memory applications," Current Applied Physics, vol. 20, no. 12, 2020.
Junsoo Kim, Solyee Im, Jeong Hun Kim, Sang Moon Kim, Seung‐Min Lee, Jaewoo Lee, Jong Pil Im, Jiyong Woo, and Seung Eon Moon, "Artificial Perspiration Membrane by Programmed Deformation of Thermoresponsive Hydrogels," Advanced Materials, vol. 32, no. 6, 2020.
Jong-Pil Im, Jeong Hun Kim, Jae Woo Lee, Jiyong Woo, Sol Yee Im, Yeriaron Kim, Yong-Sung Eom, Won Chul Choi, Jun Soo Kim, and Seung Eon Moon, "Self-Powered Autonomous Wireless Sensor Node by Using Silicon-Based 3D Thermoelectric Energy Generator for Environmental Monitoring Application," Energies, vol. 13, no. 3, 2020.
2019
Jiyong Woo, Youngin Goh, Solyee Im, Jeong Hyeon Hwang, Yeriaron Kim, Jeong Hum Kim, Jong-Pil Im, Sung-Min Yoon, Seung Eon Moon, and Sanghun Jeon, “Improved Ferroelectric Switching in Sputtered HfZrOx Device Enabled by High Pressure Annealing,” IEEE Electron Device Letters, vol. 41, no. 2, 2019.
Jiyong Woo, Panni Wang, and Shimeng Yu, “Integrated Crossbar Array with Resistive Synapses and Oscillation Neurons,” IEEE Electron Device Letters, vol. 40, no. 8, 2019.
Jiyong Woo and Shimeng Yu, “Impact of Selector Devices in Analog RRAM based Crossbar Arrays for Inference and Training of Neuromorphic System,” IEEE Transactions on Very Large Scale Integration, vol. 27, no. 9, 2019.
Myungjun Kim, Chuljun Lee, Yubin Song, Sang-Mo Koo, Jong-Min Oh, Jiyong Woo, and Daeseok Lee, "Energy-Storing Hybrid 3D Vertical Memory Structure," IEEE Electron Device Letters, vol. 40, no. 10, 2019.
Jaesung Park, Chuljun Lee, Myunghoon Kwak, Solomon Amsalu Chekol, Seokjae Lim, Myungjun Kim, Jiyong Woo, Hyunsang Hwang, and Daeseok Lee, "Microstructural engineering in interface-type synapse device for enhancing linear and symmetric conductance changes," Nanotechnology, vol. 30, no. 30, 2019.
Kibong Moon, Seokjae Lim, Jaesung Park, Changhyuck Sung, Seungyeol Oh, Jiyong Woo, Jongwon Lee, and Hyunsang Hwang, "RRAM-based synapse devices for neuromorphic systems," Faraday discussions, vol. 213, 2019.
Chuljun Lee, Jaewon Lee, Myungjun Kim, Jiyong Woo, Sang-Mo Koo, Jong-Min Oh, and Daeseok Lee, “Two-terminal structured synaptic device using ionic electrochemical reaction mechanism for neuromorphic system,” IEEE Electron Device Letters, vol. 40, no. 4, 2019.
2018
Jiyong Woo and Shimeng Yu, “Two-Step Read Scheme in One-Selector and One-RRAM Crossbar based Neural Network for Improved Inference Robustness,” IEEE Transactions on Electron Devices, vol. 65, no. 12, 2018.
Jiyong Woo and Shimeng Yu, “Resistive Memory based Analog Synapse: The Pursuit for Linear and Symmetric Weight Update,” IEEE Nanotechnology Magazine, vol. 12, no. 3, 2018.
Jiyong Woo and Shimeng Yu, “Comparative Study of Cross-point MRAM Array with Exponential and Threshold Selectors for Read Operation,” IEEE Electron Device Letters, vol. 39, no. 5, 2018.
Myonghoon Kwak, Jaesung Park, Jiyong Woo, and Hyunsang Hwang, "Implementation of Convolutional Kernel Function Using 3-D TiOx Resistive Switching Devices for Image Processing," IEEE Transactions on Electron Devices, vol. 65, no. 10, 2018.
Seokjae Lim, Jongmyung Yoo, Jeonghwan Song, Jiyong Woo, Jaehyuk Park, Hyunsang Hwang, "CMOS compatible low-power volatile atomic switch for steep-slope FET devices," Applied Physics Letters, vol. 113, no. 3, 2018.
Andrea Padovani, Jiyong Woo, Hyunsang Hwang, and Luca Larcher, "Understanding and Optimization of Pulsed SET Operation in HfOx-Based RRAM Devices for Neuromorphic Computing Applications," IEEE Electron Device Letters, vol. 39, no. 5, 2018.
2017
Jiyong Woo, Dongwook Lee, Yunmo Koo, and Hyunsang Hwang, “Dual functionality of threshold and multilevel resistive switching characteristics in nanoscale HfO2-based RRAM devices for artificial neuron and synapse elements,” Microelectronic Engineering, 182, 2017.
Jiyong Woo, Andrea Padovani, Kibong Moon, Myounghun Kwak, Luca Larcher, and Hyunsang Hwang, “Linking Conductive Filament Properties and Evolution to Synaptic Behavior of RRAM Devices for Neuromorphic Applications,” IEEE Electron Device Letters, vol. 38, no. 9, 2017.
Jeonghwan Song, Jiyong Woo, Seokjae Lim, Solomon Amsalu Chekol, and Hyunsang Hwang, "Self-limited CBRAM with threshold selector for 1S1R crossbar array applications," IEEE Electron Device Letters, vol. 38, no. 11, 2017.
Jeonghwan Song, Jiyong Woo, Jongmyung Yoo, Solomon Amsalu Chekol, Seokjae Lim, Changhyuck Sung, and Hyunsang Hwang, "Effects of Liner Thickness on the Reliability of AgTe/TiO2-Based Threshold Switching Devices," IEEE Transactions on Electron Devices, vol. 64, no. 11, 2017.
Seokjae Lim, Jiyong Woo, and Hyunsang Hwang, "Excellent threshold selector characteristics of Cu2S-based atomic switch device," ECS Journal of Solid State Science and Technology, vol. 6, no. 9, 2017.
Changhyuck Sung, Jeonghwan Song, Jiyong Woo, Hyunsang Hwang, "Effect of a self-limited reset operation on the reset breakdown characteristics of a monolithically integrated 1T1R RRAM," ECS Journal of Solid State Science and Technology, vol. 6, no. 7, 2017.
Seungyeol Oh, Taeho Kim, Myunghoon Kwak, Jeonghwan Song, Jiyong Woo, Sanghun Jeon, In Kyeong Yoo, Hyunsang Hwang, "HfZrOx-Based Ferroelectric Synapse Device With 32 Levels of Conductance States for Neuromorphic Applications," IEEE Electron Device Letters, vol. 38, no. 6, 2017.
Fekadu Gochole Aga, Jiyong Woo, Jeonghwan Song, Jaehyuk Park, Seokjae Lim, Changhyuck Sung, Hyunsang Hwang, "Controllable quantized conductance for multilevel data storage applications using conductive bridge random access memory," Nanotechnology, vol. 28, no. 11, 2017.
2016
Jiyong Woo, Kibong Moon, Jeonghwan Song, Myounghun Kwak, Jaesung Park, and Hyunsang Hwang, “Optimized Programming Scheme Enabling Linear Potentiation in Filamentary HfO2 RRAM Synapse for Neuromorphic Systems,” IEEE Transactions on Electron Devices, vol. 63, no. 12, 2016.
Jiyong Woo, Kibong Moon, Jeonghwan Song, Sangheon Lee, Myounghun Kwak, Jaesung Park, and Hyunsang Hwang, “Improved Synaptic Behavior under Identical Pulses using AlOx/HfO2 Bilayer RRAM Array for Neuromorphic Systems,” IEEE Electron Device Letters, vol. 37, no. 8, 2016.
Jiyong Woo, Attilio Belmonte, Augusto Redolfi, Hyunsang Hwang, Malgorzata Jurczak, and Ludovic Goux, “Role of Local Chemical Potential of Cu on Data Retention Properties of Cu-Based Conductive-Bridge RAM,” IEEE Electron Device Letters, vol. 37, no. 2, 2016.
Jiyong Woo, Attilio Belmonte, Augusto Redolfi, Hyunsang Hwang, Malgorzata Jurczak, and Ludovic Goux, “Introduction of WO3 Layer in a Cu-based Al2O3 Conductive Bridge RAM System for Robust Cycling with Larger Memory Window,” IEEE Journal of Electron Devices Society, vol. 4, no. 3, 2016.
Jiyong Woo and Hyunsang Hwang, “Comprehensive Assessment of a Back-to-Back Schottky Diode with Ultrathin TiO2 layer for Cross-point Selector Applications,” ECS Journal of Solid State Science and Technology, 5, 6, Q188-Q190, 2016.
Jiyong Woo and Hyunsang Hwang, “Impact of Filament Instability in an Ag2S-based Conductive-Bridge RAM for Cross-point Selector Applications,” ECS Journal of Solid State Science and Technology, 5, 3, Q98-Q100, 2016.
Seokjae Lim, Jiyong Woo, Sangheon Lee, Jaesung Park, and Hyunsang Hwang, "Hourglass-Shaped Metal-Filament Switching Device with Multi-Layer (AlOX/TiO2) Oxide Electrolytes," ECS Journal of Solid State Science and Technology, vol. 5, no. 9, 2016.
Geoffrey W. Burr, Robert M. Shelby, Abu Sebastian, Sangbum Kim, Seyoung Kim, Severin Sidler, Kumar Virwani, Masatoshi Ishii, Pritish Narayanan, Alessandro Fumarola, Lucas L. Sanches, Irem Boybat, Manuel Le Gallo, Kibong Moon, Jiyong Woo, Hyunsang Hwang, and Yusuf Leblebici, “Neuromorphic computing using non-volatile memory,” Advances in Physics: X, vol. 2, 2016.
Jaesung Park, Myunghoon Kwak, Kibong Moon, Jiyong Woo, Dongwook Lee, and Hyunsang Hwang, “TiOx-Based RRAM Synapse With 64-Levels of Conductance and Symmetric Conductance Change by Adopting a Hybrid Pulse Scheme for Neuromorphic Computing,” IEEE Electron Device Letters, vol. 37, no. 12, 2016.
Jeonghwan Song, Jiyong Woo, Sangheon Lee, Amit Prakash, Jongmyung Yoo, Kibong Moon, and Hyunsang Hwang, “Steep Slope Field-Effect Transistors with Ag/TiO2-based Threshold Switching Device,” IEEE Electron Device Letters, vol. 37, no. 7, 2016.
Jaesung Park, Jiyong Woo, Amit Prakash, Sangheon Lee, Seokjae Lim, and Hyunsang Hwang, “Improved reset breakdown strength in a HfOx-based resistive memory by introducing RuOx oxygen diffusion barrier,” AIP Advances, 6, 5, 055114, 2016.
Jeonghwan Song, Daeseok Lee, Jiyong Woo, Euijun Cha, Sangheon Lee, and Hyunsang Hwang, “Effects of High-Pressure Hydrogen Annealing (HPHA) on Reliability Characteristics of RRAM,” Journal of Nanoscience and Nanotechnology, 16, 5, pp. 4758-4761, 2016.
Fekadu Gochole Aga, Jiyong Woo, Sangheon Lee, Jeonghwan Song, Jaesung Park, Jaehyuk Park, Seokjae Lim, Changhyuck Sung, and Hyunsang Hwang, “Retention modeling for ultra-thin density of Cu-based conductive bridge random access memory (CBRAM),” AIP Advances, 6, 2, 025203, 2016.
Euijun Cha, Jaehyuk Park, Jiyong Woo, Daeseok Lee, Amit Prakash, and Hyunsang Hwang, “Comprehensive scaling study of NbO2 insulator-metal-transition selector for cross point array application,” Applied Physics Letters, 108, 18, 153502, 2016.
2015
Jongmyung Yoo, Jiyong Woo, Jeonghwan Song, and Hyunsang Hwang, “Threshold switching behavior of Ag-Si based selector device and hydrogen doping effect on its characteristics,” AIP Advances, 5, 12, 127221, 2015.
Sangheon Lee, Daeseok Lee, Jiyong Woo, Euijun Cha, Jaesung Park, Kibong Moon, Jeonghwan Song, and Hyunsang Hwang, “The band-gap energy dependence of metal oxides on non-linear characteristics in the HfO2-based resistive random access memory,” Microelectronic Engineering, 147, pp. 321-324, 2015.
Jeonghwan Song, Amit Prakash, Daeseok Lee, Jiyong Woo, Euijun Cha, Sangheon Lee, and Hyunsang Hwang, “Bidirectional threshold switching in engineered multilayer (Cu2O/Ag:Cu2O/Cu2O) stack for cross-point selector application,” Applied Physics Letters, 107, 11, 113504, 2015.
Seokjae Lim, Sangheon Lee, Jiyong Woo, Daeseok Lee, Amit Prakash, and Hyunsang Hwang, “Effects of N-Doped GeSbTe Buffer Layer on Switching Characteristics of Cu/Al2O3-Based CBRAM,” ECS Solid State Letters, 4, 7, pp. Q25-28, 2015.
Jeonghwan Song, Jiyong Woo, Amit Prakash, Daeseok Lee, and Hyunsang Hwang, “Threshold Selector with High Selectivity and Steep Slope for Cross-point Memory Array,” IEEE Electron Device Letters, vol. 36, no. 7, 2015.
Yunmo Koo, Stefano Ambrogio, Jiyong Woo, Jeonghwan Song, Daniele Ielmini, and Hyunsang Hwang, “Accelerated Retention Test Method by Controlling Ion Migration Barrier of ReRAM,” IEEE Electron Device Letters, vol. 36, no. 3, 2015.
Saiful Haque Misha, Nusrat Tamanna, Jiyong Woo, Sangheon Lee, Jeonghwan Song, Jaesung Park, Seokjae Lim, Jaehyuk Park, and Hyunsang Hwang, “Effect of nitrogen doping on variability of TaOx-RRAM for low-power 3-bit MLC applications,” ECS Solid-State Electronics, 4, 3, pp. Q25-28, 2015.
Daeseok Lee, Jaesung Park, Jaehyuk Park, Jiyong Woo, Euijun Cha, Sangheon Lee, Kibong Moon, Jeonghwan Song, Yunmo Koo, and Hyunsang Hwang, “Structurally Engineered Stackable and Scalable 3D Titanium-oxide Switching devices for High-density Nanoscale Memory,” Advanced Materials, 27, 1, pp. 59-64, 2015.
Sangheon Lee, Jeonghwan Song, Daeseok Lee, Jiyong Woo, Euijun Cha, Hyunsang Hwang, “Effect of AC pulse overshoot on non-linearity and reliability of selector-less resistive random access memory in AC pulse operation,” Solid-State Electronics, 104, 70-4, 2015.
Amit Prakash, Jaesung Park, Jeonghwan Song, Jiyong Woo, Eui-Jun Cha, and Hyunsang Hwang, “Demonstration of low power 3-bit multi-level cell characteristics in a TaOx-based RRAM by stack engineering,” IEEE Electron Device Letters, vol. 36, no. 1, 2015.
2014
Jiyong Woo, Daeseok Lee, Euijun Cha, Sangheon Lee, Sangsu Park, and Hyunsang Hwang, “Control of Cu Conductive Filament in Complementary Atom Switch for Cross-point Selector Device Application,” IEEE Electron Device Letters, vol. 35, no. 1, 2014.
Kibong Moon, Sangsu Park, Junwoo Jang, Daeseok Lee, Jiyong Woo, Euijun Cha, Sangheon Lee, Jaesung Park, Jeonghwan Song, Yunmo Koo, and Hyunsang Hwang, “Hardware implementation of associative memory characteristics with analogue-type resistive-switching device,” Nanotechnology, 25, 49, 495204, 2014.
Sangheon Lee, Jiyong Woo, Daeseok Lee, Euijun Cha, and Hyunsang Hwang, “Stepwise set operation for reliable switching uniformity and low operating current of ReRAMs,” Solid-State Electronics, 102, pp. 42-45, 2014.
Sangheon Lee, Daeseok Lee, Jiyong Woo, Euijun Cha, Jaesung Park, and Hyunsang Hwang, “Engineering oxygen vacancy of tunnel barrier and switching layer for both selectivity and reliability of selector-less ReRAM,” IEEE Electron Device Letters, vol. 35, no. 10, 2014.
Sangsu Park, Manzar Siddik, Jinwoo Noh, Daeseuk Lee, Kibong moon, Jiyong Woo, Byoung Hun Lee, and Hyunsang Hwang, “A nitrogen-treated memristive device for tunable electronic synapses,” Semiconductor Science and Technology, 29, 10, pp. 104006-104010, 2014.
Nusrat Tamanna, Saiful Haque Misha, Amit Prakash, Jeonghwan Song, Daeseok Lee, Jiyong Woo, Jaesung Park, and Hyunsang Hwang, “Highly Non-Linear Nitrogen Doped ZnO Based Selector Device for Cross-Point Array,” ECS Solid State Letters, 3, 11, pp. 136-139, 2014.
Daeseok Lee, Jiyong Woo, Euijun Cha, Sangheon Lee, and Hyunsang Hwang, “Effects of High-Pressure Hydrogen Annealing on the Formation of Conducting Filaments in Filament-Type Resistive Random-Access Memory,” Journal of Electronic Materials, 43, 9, pp.3635-3639, 2014.
Nusrat Tamanna, Saiful Haque Misha, Amit Prakash, Daeseok Lee, Jiyong Woo, Euijun Cha, Behnoush Attarimashalkoubeh, Jeonghwan Song, Sangheon Lee, Kibong Moon, and Hyunsang Hwang, “Non-linear I-V characteristics of TiOy film by optimizing thickness and trap density for selector-less ReRAM,” ECS Solid State Letters, 3, 10, pp. 117-119, 2014.
Sangheon Lee, Jiyong Woo, Daeseok Lee, Euijun Cha, and Hyunsang Hwang, “Internal Resistor of Multi-Functional Tunnel Barrier for Selectivity and Switching Uniformity in Resistive Random Access Memory,” Nanoscale Research Letters, 9:364, 2014.
Daeseok Lee, Jiyong Woo, Sangsu Park, Euijun Cha, Sangheon Lee, and Hyunsang Hwang, “Low-temperature spin-on-glass method involving high-pressure annealing for filling high-aspect-ratio structures,” Japanese Journal of Applied Physics, 53, 6, 068007, 2014.
Jeonghwan Song, Daeseok Lee, Jiyong Woo, Yunmo Koo, Euijun Cha, Sangheon Lee, Jaesung Park, Kibong Moon, Saiful Haque Misha, Amit Prakash, and Hyunsang Hwang, “Effects of RESET Current Overshoot and Resistance State on Reliability of RRAM,” IEEE Electron Device Letters, vol. 35, no. 6, 2014.
Daeseok Lee, Jiyong Woo, Sangsu Park, Euijun Cha, Sangheon Lee, and Hyunsang Hwang, “Dependence of reactive metal layer on resistive switching in a bi-layer structure Ta/HfOx filament type resistive random access memory,” Applied Physics Letters, 104, 8, 083507, 2014.
Sangheon Lee, Jiyong Woo, Daeseok Lee, Euijun Cha, Jaesung Park, Kibong Moon, Jeonghwan Song, Yunmo Koo, and Hyunsang Hwang, “Tunnel Barrier Engineering of Titanium Oxide for High Non-Linearity of Selector-less Resistive Random Access Memory,” Applied Physics Letters, 104, 5, 052108, 2014.
Daeseok Lee, Jeonghwan Song, Jiyong Woo, Jaesung Park, Sangsu Park, Euijun Cha, Sangheon Lee, Yunmo Koo, Kibong Moon, and Hyunsang Hwang, “Optimized Lightning-rod Effect to Overcome Trade-off between Switching Uniformity and On/off Ratio in ReRAM,” IEEE Electron Device Letters, vol. 35, no. 2, 2014.
2013
Jiyong Woo, Daeseok Lee, Euijun Cha, Sangheon Lee, Sangsu Park, and Hyunsang Hwang, “Multilayer-oxide-based Bidirectional Cell Selector Device for Cross-point Resistive Memory Applications,” Applied Physics Letters, 103, 202113, 2013.
Jiyong Woo, Daeseok Lee, Euijun Cha, Sangheon Lee, Sangsu Park, and Hyunsang Hwang, “Vertically Stacked ReRAM Composed of a Bidirectional Selector and CB-RAM for Cross-point Array Applications,” IEEE Electron Device Letters, vol. 34, no. 12, 2013.
Jiyong Woo, Seonghyun Kim, Wootae Lee, Daeseok Lee, Sangsu Park, Godeuni Choi, Euijun Cha, and Hyunsang Hwang, “Thermally Activated Non-linearity of Device in Resistance-switching Memory for Cross-point Array Applications,” Applied Physics Letters, 102, 122115, 2013.
Jiyong Woo, Daeseok Lee, Godeuni Choi, Euijun Cha, Seonghyun Kim, Wootae Lee, Sangsu Park, and Hyunsang Hwang, “Selector-less RRAM with Non-linearity of Device for Cross-point Array Applications,” Microelectronic Engineering, 109, 360-363, 2013.
Sangheon Lee, Daeseok Lee, Jiyong Woo, Euijun Cha, Jaesung Park, Jeonghwan Song, Kibong Moon, Yunmo Koo, Behnoush Attari, Nusrat Tamanna, Misha Saiful Haque, and Hyunsang Hwang, “Highly reliable resistive switching without an initial forming operation by defect engineering,” IEEE Electron Device Letters, vol. 34, no. 12, 2013.
Daeseok Lee, Jiyong Woo, Euijun Cha, Sangsu Park, Sangheon Lee, Jaesung Park, and Hyunsang Hwang, “Defect engineering using bi-layer structure in filament type ReRAM,” IEEE Electron Device Letters, vol. 34, no. 10, 2013.
Daeseok Lee, Jiyong Woo, Euijun Cha, Seonghyun Kim, Wootae Lee, Sangsu Park, and Hyunsang Hwang, “Interface engineering for low power and uniform resistive switching in bi-layer structural filament type ReRAM,” Microelectronic Engineering, 109, pp. 385-388, 2013.
Seonghyun Kim, Jubong Park, Jiyong Woo, Chunhum Cho, Wootae Lee, Jungho Shin, Godeuni Choi, Sangsu Park, Daeseok Lee, Byoung Hun Lee, and Hyunsang Hwang, “Threshold-Switching Characteristics of a Nanothin-NbO2-layer-based Pt/NbO2/Pt stack for Use in Cross-point-type Resistive Memories,” Microelectronic Engineering, 107, pp. 33-36, 2013.
2012
Sangsu Park, Seungjae Jung, Manzar Siddik, Minseok Jo, Jubong Park, Seonghyun Kim, Wootae Lee, Jungho Shin, Daeseok Lee, Godeuni Choi, Jiyong Woo, Euijun Cha, Byoung Hun Lee, and Hyunsang Hwang, “Self-formed Schottky barrier induced selector-less RRAM for cross-point memory applications,” Physica Status Solidi-Rapid Research Letters, 6, 11, pp. 454-456, 2012.
Seonghyun Kim, Daeseok Lee, Jubong Park, Seungjae Jung, Wootae Lee, Jungho Shin, Jiyong Woo, Godeuni Choi, and Hyunsang Hwang, “Defect engineering: Reduction effect of hydrogen atom impurities in HfO2-based resistive-switching memory devices,” Nanotechnology, 23, 32, 325702, 2012.
Wootae Lee, Jubong Park, Seonghyun Kim, Jiyong Woo, Jungho Shin, Godeuni Choi, Sangsu Park, Daeseok Lee, Euijun Cha, Byoung Hun Lee, and Hyunsang Hwang, “High Current Density and Nonlinearity Combination of Selection Device Based on TaOX/TiO2/TaOX Structure for One Selector-One Resistor Arrays,” ACS Nano, 6, 9, pp. 8166-8172, 2012.
Wootae Lee, Jubong Park, Seonghyun Kim, Jiyong Woo, Jungho Shin, Daeseok Lee, Euijun Cha, Hyunsang Hwang, “Improved switching uniformity in resistive random access memory containing metal-doped electrolyte due to thermally agglomerated metallic filaments,” Applied Physics Letters, 100, 14, 142106, 2012.
Jubong Park, Seungjae Jung, Wootae Lee, Seonghyun Kim, Jungho Shin, Daeseok Lee, Jiyong Woo, and Hyunsang Hwang, “Improved Switching Variability and Stability by Activating a Single Conductive Filament,” IEEE Electron Device Letters, vol. 33, no. 5, 2012.
Jungho Shin, Godeuni Choi, Jiyong Woo, Jubong Park, Sangsu Park, Wootae Lee, Seonghyun Kim, Myungwoo Son, Hyunsang Hwang, “MIM-type cell selector for high-density and low-power cross-point memory application,” Microelectronic Engineering, 93, pp. 81-84, 2012.
Daeseok Lee, Jubong Park, Seungjae Jung, Godeuni Choi, Joonmyoung Lee, Seonghyun Kim, Jiyong Woo, Manzar Siddik, Eujun Cha, and Hyunsang Hwang, “Operation Voltage Control in Complementary Resistive Switches Using Heterodevice,” IEEE Electron Device Letters, vol. 33, no. 4, 2012.
2011
Jiyong Woo, Seungjae Jung, Manzar Siddik, Euijun Cha, Sharif Md. Sadaf, and Hyunsang Hwang, “Effect of Interfacial Oxide Layer on the Switching Uniformity of Ge2Sb2Te5-based Resistive Change Memory Devices,” Applied Physics Letters, 99, 162109, 2011.