Conference proceedings
2024
Hyeonsik Choi, Hyun Wook Kim, Eunryeong Hong, Nayeon Kim, Seonuk Jeon, Yunsur Kim, Hyoungjin Park, Jiae Jeong, and Jiyong Woo, “Highly Controllable Probabilistic Bits Leveraging Instability of SiOx-Based Threshold Switching Devices for Probabilistic Computing,” European Solid-State Electronics Research Conference (ESSERC), 2024.
Jiae Jeong, Hyoungjin Park, and Jiyong Woo, “Controllable Polarization Switching of Hafnia-Based Ferroelectric Bilayers,” IEEE Silicon Nanoelectronics Workshop (SNW), 2024.
Yunsur Kim, Hyeonsik Choi, and Jiyong Woo, “Engineering Strategies in HfOx RRAM-Based Analog Synapses Toward Linear Weight Update for Neuromorphic Hardware Accelerators,” IEEE Silicon Nanoelectronics Workshop (SNW), 2024.
Hyeonsik Choi, Nayeon Kim, Seonuk Jeon, Yunsur Kim, Hyoungjin Park, Jiae Jeong, and Jiyong Woo, “Role of oxide barrier in a NbOx layer with noninert electrodes for high-yield threshold switching characteristics,” Nano Convergence Conference (NCC), 2024.
Hyoungjin Park, Nayeon Kim, Seonuk Jeon, Yunsur Kim, Hyeonsik Choi, Jiae Jeong, and Jiyong Woo, “Effect of Al dopant concentration and distribution in HfO2 layer on ferroelectric switching characteristics,” Nano Convergence Conference (NCC), 2024.
Jiae Jeong, Nayeon Kim, Hyun Wook Kim, Eunryeong Hong, Seonuk Jeon, Yunsur Kim, Hyeonsik Choi, Hyoungjin Park, and Jiyong Woo, “Dual ferroelectric stack with tunable coercive voltage for high-density memory applications,” Nano Convergence Conference (NCC), 2024.
Yunsur Kim, Hyeonsik Choi, Hyoungjin Park, Jiae Jeong, and Jiyong Woo, “Synaptic behavior of selector-less HfOx-based RRAM for neuromorphic computing applications,” Nano Convergence Conference (NCC), 2024.
Hyoungjin Park, Seonuk Jeon, Hyun Wook Kim, Eunryeong Hong, Nayeon Kim, Yunsur Kim, Hyeonsik Choi, Jiae Jeong, and Jiyong Woo, “Effect of Al Dopant Distribution in HfO2 Layer on Ferroelectric Switching Characteristics,” The 31st Korean Conference on Semiconductors (KCS), 2024.
Hyeonsik Choi, Hyun Wook Kim, Eunryeong Hong, Nayeon Kim, Seonuk Jeon, Yunsur Kim, Hyoungjin Park, Jiae Jeong, and Jiyong Woo, “Role of oxide barrier in a NbOx layer with noninert electrodes for high-yield threshold switching characteristics,” The 31st Korean Conference on Semiconductors (KCS), 2024.
Jiae Jeong, Nayeon Kim, Hyun Wook Kim, Eunryeong Hong, Seonuk Jeon, Yunsur Kim, Hyeonsik Choi, Hyoungjin Park, and Jiyong Woo, “Novel Dual Ferroelectric Stack with Wide-Range Tunable Coercive Voltage for High-Density 3D FeNAND Applications,” The 31st Korean Conference on Semiconductors (KCS), 2024.
Nayeon Kim, Hyun Wook Kim, Eunryeong Hong, Seonuk Jeon, and Jiyong Woo, "Role of Post-Annealing in Transistors with Oxide Channel/High-k Dielectrric Stacks for 3D Stackable Memory Applications," The 31st Korean Conference on Semiconductors (KCS), 2024.
Yunsur Kim, Hyun Wook Kim, Eunryeong Hong, Nayeon Kim, Seonuk Jeon, Hyeonsik Choi, Hyoungjin Park, Jiae Jeong, and Jiyong Woo, “Impact of Al2O3 Layer on Nonlinearity of Selector-less HfOx-Based RRAM for Neuromorphic Computing Applications,” The 31st Korean Conference on Semiconductors (KCS), 2024.
Eunryeong Hong, Hyun Wook Kim, Seonuk Jeon, Nayeon Kim, and Jiyong Woo, "Artificial Neuron Based on Toxic Element-free SiOx Threshold Switch for Unconventional Oscillatory Neural Networks," The 31st Korean Conference on Semiconductors (KCS), 2024.
2023
Nir Tessler, Seonuk Jeon, and Jiyong Woo, “Enhancing Memory Retention of FAB Compatible ECRAM Devices using an Ion Blocking Layer,” 2023 MRS Fall Meeting, 2023.
Hyoungjin Park, Seonuk Jeon, Hyun Wook Kim, Eunryeong Hong, Nayeon Kim, Yunsur Kim, Hyeonsik Choi, Jiae Jeong, and Jiyong Woo, “Impact of Al dopant distribution in HfO2 layer on ferroelectric switching characteristics,” The 13th International Conference on Advanced Materials and Devices (ICAMD 2023), 2023.
Hyeonsik Choi, Hyun Wook Kim, Eunryeong Hong, Nayeon Kim, Seonuk Jeon, Yunsur Kim, Hyoungjin Park, Jiae Jeong, and Jiyong Woo, “Understanding the impact of oxide barriers in NbOx-based threshold switching selectors,” The 13th International Conference on Advanced Materials and Devices (ICAMD 2023), 2023.
Jiae Jeong, Nayeon Kim, Hyun Wook Kim, Eunryeong Hong, Seonuk Jeon, Yunsur Kim, Hyeonsik Choi, Hyoungjin Park, and Jiyong Woo, “Multilevel polarization switching in doped HfO2 layers by stack engineering for high-density memory applications,” The 13th International Conference on Advanced Materials and Devices (ICAMD 2023), 2023.
Yunsur Kim, Eunryeong Hong, Hyun Wook Kim, Nayeon Kim, Seonuk Jeon, Hyeonsik Choi, Hyoungjin Park, Jiae Jeong, and Jiyong Woo, “Synaptic behavior in selector-less AlOx/HfOx RRAM for neuromorphic computing applications,” The 13th International Conference on Advanced Materials and Devices (ICAMD 2023), 2023.
Joon Pyo Kim, Hyun Wook Kim, Jaeyong Jeong, Juhyuk Park, Seong Kwang Kim, Jongmin Kim, Jiyong Woo, and Sanghyeon Kim, “BEOL-compatible 4F2 Single Crystalline Semiconductor Oscillator for Low-power and Large-scale Oscillatory Neural Network Hardware,” 2023 IEEE International Electron Devices Meeting (IEDM), 2023.
Nayeon Kim, Hyun Wook Kim, Eunryeong Hong, Seonuk Jeon, and Jiyong Woo, "Role of Post-Annealing in Sputtered IGZO Transistor for 3D Stackable Memory Applications," 54th IEEE Semiconductor Interface Specialists Conference (SISC), 2023.
Eunryeong Hong, Hyun Wook Kim, Seonuk Jeon, Nayeon Kim, and Jiyong Woo, "Artificial Neuron Based on SiOx Threshold Switch for Oscillatory Neural Networks," 54th IEEE Semiconductor Interface Specialists Conference (SISC), 2023.
Seonuk Jeon, Nayeon Kim, Eunryeong Hong, Hyun Wook Kim, and Jiyong Woo, "Improved Symmetrical Analog Switching of CuOx/HfOx Synaptic Transistors Using Al2O3 Buffer Layer and Two-Step Programming Scheme for Neuromorphic Systems," 54th IEEE Semiconductor Interface Specialists Conference (SISC), 2023.
Seonuk Jeon, Nayeon Kim, Eunryeong Hong, Hyun Wook Kim, and Jiyong Woo, "First Demonstration of Novel Channel-less CuOx/HfOx Synaptic Transistor for Neuromorphic Computing Systems," 2023 International Conference on Solid State Devices and Materials (SSDM), 2023.
Hyun Wook Kim, Seyeong Jeon, Heebum Kang, Eunryeong Hong, Nayeon Kim, Seonuk Jeon, Hyeonsik Choi, Yunsur Kim, and Jiyong Woo, "Energy-Efficient Oscillatory Neural Networks Utilizing NbOx Oscillation Neurons for Edge Detection," NANO KOREA 2023, 2023.
Nayeon Kim, Heebum Kang, Hyun Wook Kim, Eunryeong Hong, Seonuk Jeon, Yunsur Kim, Hyeonsik Choi, and Jiyong Woo, "Elucidating Switching Mechanism of Nonvolatile Analog Redox Transistor Based on Mobile Ion-modulated-electrolyte Thickness Model for Neuromorphic Synaptic Devices," NANO KOREA 2023, 2023.
Yunsur Kim, Heebum Kang, Hyun Wook Kim, Eunryeong Hong, Nayeon Kim, Seonuk Jeon, Hyeonsik Choi, and Jiyong Woo, "Reliable Multilevel Resistance Achieved by Active Switching Layer Optimization in HfOx-based RRAM for Neuromorphic Synapse Devices," NANO KOREA 2023, 2023.
Hyeonsik Choi, Hyun Wook Kim, Heebum Kang, Eunryeong Hong, Nayeon Kim, Seonuk Jeon, Yunsur Kim, and Jiyong Woo, "Effect of Thickness and Oxygen Flux on NbOx Film for Threshold Switching Selector," NANO KOREA 2023, 2023.
Eunryeong Hong, Hyun Wook Kim, Kibong Moon, and Jiyong Woo, "Enhanced Image Recognition Performance with Reliable PrCaMnO RRAM-Based Kernels," Nano Convergence Conference (NCC), 2023.
Seonuk Jeon, Nayeon Kim, and Jiyong Woo, "Improved Fault Tolerance of Convolution Kernel Built with Non-ideal HfOx-Based RRAM," Nano Convergence Conference (NCC), 2023.
Hyun Wook Kim, Heebum Kang, Eunryeong Hong, and Jiyong Woo, "Artificial Neurons Based on NbOx Metal-Insulator Transition Devices for Neuromorphic Computing Systems," Nano Convergence Conference (NCC), 2023.
Hyun Wook Kim, Eunryeong Hong, Seonuk Jeon, Heebum Kang, Nayeon Kim, and Jiyong Woo, "Energy-efficient Neuromorphic Systems Driven by Emerging Device Technologies," The 30th Korean Conference on Semiconductors (KCS), 2023.
Seonuk Jeon, Eunryeong Hong, Heebum Kang, Hyun Wook Kim, Nayeon Kim, and Jiyong Woo, "Fault-tolerant RRAM-based Convolutional Kernel Using Hybrid Precision Quantization for Image Processing," The 30th Korean Conference on Semiconductors (KCS), 2023.
Hyun Wook Kim, Heebum Kang, Eunryeong Hong, Nayeon Kim, Seonuk Jeon, and Jiyong Woo, "Oscillatory Neural Networks with NbOx Threshold Switch-Based Neurons for Image Edge Detection," The 30th Korean Conference on Semiconductors (KCS), 2023.
Heebum Kang, Hyun Wook Kim, Eunryeong Hong, Nayeon Kim, Seonuk Jeon, and Jiyong Woo, "Fully Parallel, Highly Linear Synaptic Weight Update Enabled by Ion-limited CuOx/HfOx/WOx ECRAM Synapse for Neuromorphic Systems," The 30th Korean Conference on Semiconductors (KCS), 2023.
Eunryeong Hong, Seonuk Jeon, Heebum Kang, Hyun Wook Kim, Nayeon Kim, Kibong Moon, and Jiyong Woo, "Hardware Convolutional Kernels with Reliable PrCaMnOx-based RRAM Array for Neuromorphic Image Processing," The 30th Korean Conference on Semiconductors (KCS), 2023.
Nayeon Kim, Heebum Kang, Hyun Wook Kim, Eunryeong Hong, Seonuk Jeon, and Jiyong Woo, "Understanding Switching Mechanism of Analog Redox Synaptic Transistor Based on Effective Electrolyte Thickness Model," The 30th Korean Conference on Semiconductors (KCS), 2023.
2022
Eunryeong Hong, Seonuk Jeon, Heebum Kang, Hyun Wook Kim, Nayeon Kim, Kibong Moon, and Jiyong Woo, "Improved State Stability of PCMO-based RRAM by Asymmetric Programming Voltage for Convolutional Kernels," 2022 International Conference on Solid State Devices and Materials (SSDM).
Heebum Kang, Hyun Wook Kim, Eun Ryeong Hong, Nayeon Kim, and Jiyong Woo, "Linear and Symmetric Weight Update of CuOx/HfOx/WOx ECRAM Synapse for Neuromorphic Systems," IEEE Silicon Nanoelectronics Workshop 2022.
Seonuk Jeon, Eunryeong Hong, Heebum Kang, Hyun Wook Kim, Nayeon Kim, and Jiyong Woo, "Impact of State-Stability of HfOx RRAM based Convolutional Kernel on Feature Extraction for Image Recognition," NANO KOREA 2022.
Nayeon Kim, Heebum Kang, Hyun Wook Kim, Eunryeong Hong, and Jiyong Woo, "Characterization and Modeling of Cu Ion-Driven Electrochemical RAM for Neuromorphic Synaptic Devices," NANO KOREA 2022.
Heebum Kang, Hyun Wook Kim, Eunryeong Hong, Nayeon Kim, and Jiyong Woo, "Filament-Free Electrochemical RAM with CuOx Gate Electrode for Analog Synaptic Devices," The 20th International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2022.
Nayeon Kim, Heebum Kang, Hyun Wook Kim, Eunryeong Hong, and Jiyong Woo, "Understanding Switching Mechanism of Nonvolatile Analog Redox Transistor-based Synaptic Devices via Modeling," The 20th International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2022.
Eunryeong Hong, Heebum Kang, Hyun Wook Kim, Nayeon Kim, Kibong Moon, and Jiyong Woo, "Interface-type RRAM with TiN/PCMO for Analog Non-volatile Synaptic Device," The 20th International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2022.
Heebum Kang, Hyun Wook Kim, Eun Ryeong Hong, Nayeon Kim, and Jiyong Woo, “뉴로모픽 반도체 소재 및 응용,” 대한금속 재료학회 춘계 학술대회, 2022.
Eun Ryeong Hong, Heebum Kang, Hyun Wook Kim, Nayeon Kim, and Jiyong Woo, "Impact of Device Area on Multilevel Characteristics of HfOx based RRAM for Synaptic Elements," 제 17차 유전체 연합 심포지엄, 2022.
Hyun Wook Kim, Sol Jin, Heebum Kang, Eun Ryeong Hong, and Jiyong Woo, "Hold Voltage Behavior in NbOx Based Threshold Switches for Selector Technology and Neuromorphic Computing Applications," 6th IEEE Electron Devices Technology and Manufacturing Conference (EDTM 2022), 2022.
Hyun Wook Kim, Sol Jin, Heebum Kang, Eun Ryeong Hong, and Jiyong Woo, "Scaling Analysis of NbOx-Threshold Switching Devices," The 29th Korean Conference on Semiconductors (KCS), 2022.
Heebum Kang, Jinah Park, Do Kyung Lee, Hyun Wook Kim, Eun Ryeong Hong, Minjoon Ahn, Sol Jin, and Jiyong Woo, "Reliable Artificial Synapse Using Multilevel HfO2 RRAM for Neuromorphic Computing Applications," The 29th Korean Conference on Semiconductors (KCS), 2022.
Seunghee Jin, Dong Geun Park, Jungchun Kim, Donghyun Kim, Seain Bang, Min Jung Kim, Seoyeon Choi, Kiseok Heo, Jiyong Woo, Jeong Hun Kim, Jong-Pil Im, Seung Eon Moon , and Jae Woo Lee, "The Influence of Annealing Temperature and Time on HfZrO Ferro-Capacitor," The 29th Korean Conference on Semiconductors (KCS), 2022.
Heebum Kang, Hyun Wook Kim, Eun Ryeong Hong, and Jiyong Woo, “Synaptic Device Design for Neuromorphic Computing Applications,” Nano Convergence Conference (NCC), 2022.
2021
Heebum Kang, Jinah Park, Dokyung Lee, Hyun Wook Kim, Minjoon Ahn, Sol Jin, and Jiyong Woo, “Characterization and Analysis of Multilevel Programming in HfO2-Based RRAM for Neuromorphic Synapse,” The 12th International Conference on Advanced Materials and Devices (ICAMD 2021), 2021.
Jiyong Woo, Heebum Kang, Hyun Wook Kim, and Eun Ryeong Hong, “Cu-Based Three-Terminal ECRAM Device for Analog Neuromorphic Synapse,” The 12th International Conference on Advanced Materials and Devices (ICAMD 2021), 2021.
Heebum Kang, Minjoon Ahn, Sol Jin, Hyun Wook Kim, Do Kyung Lee, Jinah Park, and Jiyong Woo, “Linking Between Switching Parameters and Electrical Characteristics of HfO2 based RRAM for Storage Class Memory and Neuromorphic Synapse,” NANO KOREA 2021, 2021.
Jiyong Woo, "Device Engineering Strategy of Zr-doped HfOx Ferroelectric Memory for Unconventional Computing Applications," IEEE International Symposium on Circuits and Systems (ISCAS), 2021.
2020
Jiyong Woo, Miyoung Lee, Jeong Hun Kim, Jong-Pil Im, Solyee Im. Yeriaron Kim, Seung Eon Moon, and Joohyun Lee, "Impact of Variability Issues of Resistive Memory Synapses on Pattern Recognition Systems," International SoC Design Conference (ISOCC), 2020.
2019
Jiyong Woo and Shimeng Yu, “Design Space Exploration of Ovonic Threshold Switch (OTS) for Sub-Threshold Read Operation in Cross-Point Memory Arrays,” IEEE International Symposium on Circuits and Systems (ISCAS), 2019.
Jiyong Woo and Shimeng Yu, “Device Design and Material Considerations of Ovonic Threshold Switch (OTS) for Cross-point MRAM Array,” Electron Devices Technology and Manufacturing Conference (EDTM), 2019.
Jiyong Woo and Shimeng Yu, “Device and material considerations of Ovonic Threshold Switch (OTS) for cross-point memory technology,” Materials Research Society (MRS) Spring Meeting, 2019.
2018
Jiyong Woo, Xiaochen Peng, and Shimeng Yu, “Design considerations of selector device in cross-point RRAM array for neuromorphic computing,” IEEE International Symposium on Circuits and Systems (ISCAS), 2018.
2017
Andrea Padovani, Luca Larcher, Jiyong Woo, Hyunsang Hwang, "A multiscale modeling approach for the simulation of OxRRAM devices," 17th Non-Volatile Memory Technology Symposium (NVMTS), 2017.
Attilio Belmonte, Ludovic Goux, Jiyong Woo, Umberto Celano, Augusto Redolfi, Sergiu Clima, and Gouri Sankar Kar, "Enhancement of CBRAM performance by controlled formation of a hourglass-shaped filament," 17th Non-Volatile Memory Technology Symposium (NVMTS), 2017.
2016
Jiyong Woo, Jeonghwan Song, Kibong Moon, Sangheon Lee, Jaesung Park, and Hyunsang Hwang, “Multilevel Conductance Switching of a HfO2 RRAM Array Induced by Controlled Filament for Neuromorphic Applications,” IEEE Silicon Nanoelectronics Workshop 2016 (SNW), Oral presentation, 2016.
Jiyong Woo and Hyunsang Hwang, “Reliability of Hour-Glass Shaped Filament in a Cu-based Al2O3/WO3 Conductive Bridge RAM System,” The 23rd Korean Conference on Semiconductors (KCS), Oral presentation, 2016.
Jeonghwan Song, Jaehyuk Park, Kibong Moon, Jiyong Woo, Seokjae Lim, Jongmyung Yoo, Dongwook Lee, and Hyunsang Hwang, “Monolithic Integration of AgTe/TiO2 based Threshold Switching Device with TiN liner for Steep Slope Field-Effect Transistor,” 2016 IEEE International Electron Devices Meeting (IEDM), 2016.
Seokjae Lim, Jongmyung Yoo, Jeonghwan Song, Jiyong Woo, Jaehyuk Park, and Hyunsang Hwang, “Excellent threshold switching device (IOFF~1 pA) with atom-scale metal filament for steep slope (< 5mV/dec), ultra low voltage (VDD=0.25 V) FET applications,” 2016 IEEE International Electron Devices Meeting (IEDM), 2016.
L. Goux, A. Belmonte, U. Celano, Jiyong Woo, S. Folkersma, C. Y. Chen, A. Redolfi, A. Fantini, R. Degraeve, S. Clima, W. Vandervorst, M. Jurczak, “Retention, disturb and variability improvements enabled by local chemical-potential tuning and controlled Hour-Glass filament shape in a novel W/WO3/Al2O3/Cu CBRAM,” 2016 Symposia on VLSI Technology and Circuits (VLSI), 2016.
Sangheon Lee, Jeonghwan Song, Changhyuk Seong, Jiyong Woo, Jong-moon Choi, Soon-chan Kwon, Ho-joon Kim, Hyun-suk Kang, Soo Gil Kim, Hoe Gwon Jung, Kee-won Kwon, Hyunsang Hwang, “Full Chip Integration of 3-D Cross-Point ReRAM with Leakage-Compensating Write Driver and Disturbance-Aware Sense Amplifier,” 2016 Symposia on VLSI Technology and Circuits (VLSI), 2016.
Jaesung Park, Jiyong Woo, Amit Prakash, Kibong Moon, Changhyuck Sung, and Hyunsang Hwang, “Suppression of the Reset Breakdown Failure by using RuO2 Electrode in HfOx-based RRAM,” The 23rd Korean Conference on Semiconductors (KCS), 2016.
Seokjae Lim, Sangheon Lee, Jiyong Woo, and Hyungsang Hwang, “Effects of N-GST Buffer Layer on Switching Characteristics of CBRAM,” The 23rd Korean Conference on Semiconductors (KCS), 2016.
Jeonghwan Song, Amit Prakash, Jiyong Woo, Euijun Cha, Sangheon Lee, and Hyunsang Hwang, “Bidirectional Threshold Switching in Ag:Cu2O-based Multilayer Stack for Cross-Point Selector Application,” The 23rd Korean Conference on Semiconductors (KCS), 2016.
Sangheon Lee, Jeonghwan Song, Jiyong Woo, Changhyuk Sung, and Hyunsang Hwang, “Demonstration of Bi-Directional Selector in 8 inch Wafer Process with Fully CMOS Compatibility for ReRAM Cross-Point Array,” The 23rd Korean Conference on Semiconductors (KCS), 2016.
2015
Jaesung Park, Amit Prakash, Kibong Moon, Daeseok Lee, Jiyong Woo, Euijun Cha, Sangheon Lee, Jeonghwan Song,Yunmo Koo, Jaehyuk Park, Seokjae Lim and Hyunsang Hwang, “TiOx-based Filamentary ReRAM Synapse for Neuromorphic Systems,” The 22nd Korean Conference on Semiconductors (KCS), 2015.
Amit Prakash, J. -S. Park, J. Song, S. -J. Lim, J. -H. Park, Jiyong Woo, E. Cha, Hyunsang Hwang, “Multi-state resistance controllability and variability analysis of binary oxide RRAM for ultra-high density memory applications,” The 22nd Korean Conference on Semiconductors (KCS), 2015.
Jaehyuk Park, Euijun Cha, Daeseok Lee, Jiyong Woo, Sangheon Lee, Jeonghwan Song, Jaesung Park, Yunmo Koo and Hyunsang Hwang, “Sub-Oxide Dependence of Insulator Metal Transition Characteristics on 3-D Structural Niobium Oxide Selector,” The 22nd Korean Conference on Semiconductors (KCS), 2015.
Jeonghwan Song, Daeseok Lee, Jiyong Woo, Euijun Cha, Sangheon Lee and Hyunsang Hwang, “Improvement in reliability characteristics (retention and endurance) of RRAM by using high-pressure hydrogen annealing,” The 22nd Korean Conference on Semiconductors (KCS), 2015.
Sangheon Lee, Jiyong Woo, Jaesung Park, Jeonghwan Song, Daeseok Lee, and Hyunsang Hwang, “Selector-less ReRAM with an Excellent Selectivity by the Tunnel Barrier Engineered Multi-layer Titanium Oxide and Triangular Shaped AC Pulse,” The 22nd Korean Conference on Semiconductors (KCS), 2015.
Sangheon Lee, Daeseok Lee, Jiyong Woo, Euijun Cha, Jeonghwan Song, Jaesung Park, and Hyunsang Hwang, “Study on the Effect of Oxygen Vacancy Modulation of Tunnel Barrier and Switching Layer of ReRAM on Low Leakage current and Voltage Symmetry for ReRAM Cross-point Array,” 19th Conference of Insulating Films on Semiconductors (INFOS), 2015.
Euijun Cha, Jaehyuk Park, Kibong Moon, Jeonghwan Song, Yunmo Koo, Jaehsung Park, Jiyong Woo, Amit Prakash and Hyunsang Hwang, “AC pulse characteristics of 1S (Selector) 1R (ReRAM) device,” 19th Conference of Insulating Films on Semiconductors (INFOS), 2015.
Jaehyuk Park, Euijun Cha, Daeseok Lee, Sangheon Lee, Jiyong Woo, Jeonghwan Song, Jaesung Park, Yunmo Koo, Kibong Moon, Seokjae Lim, Jongmyung Yoo and Hyunsang Hwang, “Improved Threshold Switching Characteristics of Multi-layer NbOx for 3-D Selector Application,” 19th Conference of Insulating Films on Semiconductors (INFOS), 2015.
Amit Prakash, J-S. Park, J. Song, S-J. Lim, J-H. Park, Jiyong Woo, E. Cha, Hyunsang Hwang, “Multi-state resistance switching and variability analysis of HfOx based RRAM for ultra-high density memory applications,” The 4th International Symposium on Next Generation Electronics (ISNE 2015), 2015.
2014
Jiyong Woo, Jeonghwan Song, Kibong Moon, Jihyun Lee, Euijun Cha, Amit Prakash, Daeseok Lee, Sangheon Lee, Jaesung Park, Yunmo Koo, Changyung Park, and Hyunsang Hwang, “Electrical and Reliability Characteristics of a Scaled (~30 nm) Tunnel Barrier Selector (W/Ta2O5/TaOx/TiO2/TiN) with Excellent Performance (JMAX> 107A/cm2),” 2014 Symposia on VLSI Technology and Circuits (VLSI), 2014.
Jiyong Woo, Jeonghwan Song, Kibong Moon, Jongmin Baek, Seokjae Lim, Daeseok Lee, Sangheon Lee, Euijun Cha, Amit Prakash, Kee-won Kwon, and Hyunsang Hwang, “8’’ Wafer-scale HfOx-based RRAM for 1S-1R Cross-point Memory Applications,” 2014 14th Non-Volatile Memory Technology Symposium (NVMTS), 2014.
Jiyong Woo, Daesoek Lee, Euijun Cha, Sangheon Lee, Sangsu Park, and Hyunsang Hwang, “Towards High Performance Selector Device for 3D Stacked Cross-point Arrays,” The 21st Korean Conference on Semiconductors (KCS), Oral presentation, 2014.
Behnoush Attarimashalkoubeh, Amit Prakash, Sangheon Lee, Jaesung Park, Jeonghwan Song, Daeseok Lee, Jiyong Woo, Kibong Moon, Yunmo Koo, and Hyunsang Hwang, “Improvement in the ON/OFF Ratio (~107) and Switching Uniformity of an Atom Switch Using TiOx Layer for Reconfigurable Logic Application,” The 21st Korean Conference on Semiconductors (KCS), 2014.
Sangheon Lee, Daeseok Lee, Jiyong Woo, Euijun Cha, and Hyunsang Hwang, “A Two-Step Set Operation for Reliability of ReRAM with Triple-Layer ReRAM,” The 21st Korean Conference on Semiconductors (KCS), 2014.
Jeonghwan Song, Daeseok Lee, Jiyong Woo, and Hyunsang Hwang, “Improved Reliability of RRAM by Optimizing Pulse Shape to Minimize Current Overshoot,” The 21st Korean Conference on Semiconductors (KCS), 2014.
Jaesung Park, Daeseok Lee, Jiyong Woo, Euijun Cha, Sangheon Lee, Kibong Moon, Yunmo Koo, Jeonghwan Song, and Hyunsang Hwang, “An Investigation of Electrical Characteristics in TiOx Thin Film by Controlling Oxygen Vacancy,” The 21st Korean Conference on Semiconductors (KCS), 2014.
Nusrat Tamanna, Saiful Haque Misha, Amit Prakash, Daeseok Lee, Jiyong Woo, Euijun Cha, Jeonghwan Song, Kibong Moon, and Hyunsang Hwang, “Excellent Non-Linear I-V Characteristics of Ti/HfOx ReRAM with Ultrathin TiOy Tunnel Barrier for Cross Point Memory Application,” The 21st Korean Conference on Semiconductors (KCS), 2014.
Saiful Haque Misha, Nusrat Tamanna, Euijun Cha, Daeseok Lee, Amit Prakash, Jiyong Woo, Jeonghwan Song, and Hyunsang Hwang, “Metal-Insulator-Transition in Nano Scale SmNiO3 for Selector Application with BEOL Compatibility,” The 21st Korean Conference on Semiconductors (KCS), 2014.
Euijun Cha, Jiyong Woo, Daeseok Lee, Sangheon Lee, Hyunsang Hwang, “Selector Devices for 3-D Cross-Point ReRAM,” 2014 IEEE International Symposium on Circuits and Systems (ISCAS), 2014.
J. Song, D. Lee, Jiyong Woo, E. Cha, S. Lee, J. Park, K. Moon, Y. Koo, A. Prakash, and H. Hwang, “Improvement in Reliability Characteristics (retention and endurance) of RRAM by using High-Pressure Hydrogen Annealing,” IEEE Silicon Nanoelectronics Workshop 2014 (SNW), 2014.
K. Moon, S. Park, D. Lee, Jiyong Woo, E. Cha, S. Lee, and H. Hwang, “Resistive-switching Analogue Memory Device for Neuromorphic Application,” IEEE Silicon Nanoelectronics Workshop 2014 (SNW), 2014.
Sangheon Lee, Jiyong Woo, Daeseok Lee, Euijun Cha, and Hyunsang Hwang, “Effect of TiOx-based tunnel barrier on non-linearity and switching reliability of resistive random access memory,” 2014 14th Non-Volatile Memory Technology Symposium (NVMTS), 2014.
Seokjae Lim, Sangheon Lee, Jiyong Woo, Daeseok Lee, Jaesung Park, A. Prakash, and Hyunsang Hwang, “The Effect of Nitrogen doped GST Buffer Layer on Switching Characteristics of Conductive-Bridging RAM,” 2014 14th Non-Volatile Memory Technology Symposium (NVMTS), 2014.
2013
Jiyong Woo, Wootae Lee, Sangsu Park, Seonghyun Kim, Daesoek Lee, Godeuni Choi, Euijun Cha, Jihyun Lee, Wooyoung Jung, Changyung Park, and Hyunsang Hwang, “Multi-layer Tunnel Barrier (Ta2O5/TaOx/TiO2) Engineering for Bipolar RRAM Selector Applications,” 2013 Symposia on VLSI Technology and Circuits (VLSI), 2013.
Jiyong Woo, Daesoek Lee, Godeuni Choi, Euijun Cha, Seonghyun Kim, Wootae Lee, Sangsu Park, and Hyunsang Hwang, “Selector-less RRAM with Non-linearity of Device for Cross-point Array Applications,” 18th Conference of Insulating Films on Semiconductors (INFOS), Oral presentation, 2013.
Daeseok Lee, Jiyong Woo, Euijun Cha, Seonghyun Kim, Wootae Lee, Sangsu Park, Hyunsang Hwang, “Interface engineering for low power and uniform resistive switching in bi-layer structural filament type ReRAM,” 18th Conference of Insulating Films on Semiconductors (INFOS), 2013.
Sangheon Lee, Daeseok Lee, Jiyong Woo, Euijun Cha, and Hyunsang Hwang, “A Two-Step Set Operation for Highly Uniform Resistive Swtiching ReRAM by Controllable Filament,” 43rd European Solid-State Device Research Conference (ESSDERC), 2013.
Daeseok Lee, Jaesung Park, Sangsu Park, Jiyong Woo, Euijun Cha, Sangheon Lee, Yunmo Koo, Kibong Moon, Jeonghwan Song, and Hyunsang Hwang, “Conducting filament engineering by triple-layer RRAM for uniform resistive switching,” 2013 International Conference on Solid State Devices and Materials (SSDM), 2013.
YunMo Koo, Yonghoon Choi, Euijun Cha, Daeseok Lee, Jiyong Woo, Jeonghwan Song, Kibong Moon, Jaesung Park, Sangheon Lee, and Hyunsang Hwang, “Study on nano-scale threshold switching behavior of NbOx film for ReRAM selector application,” 2013 International Conference on Solid State Devices and Materials (SSDM), 2013.
Jeonghwan Song, Daeseok Lee, Jiyong Woo, Yunmo Koo, Euijun Cha, Sangheon Lee, Jaesung Park, Kibong Moon, and Hyunsang Hwang, “Excellent Reliability and Switching Uniformity of RRAM by Optimizing SET/RESET Pulse Shape to Minimize Current Overshoot,” 2013 International Conference on Solid State Devices and Materials (SSDM), 2013.
E. Cha, Jiyong Woo, D. Lee, S. Lee, J. Song, Y. Koo, J. Lee, C. Park, M. Yang, K. Kamiya, K. Shiraishi, B. Magyari-Köpe, Y. Nishi, H. Hwang, “Nanoscale (~10nm) 3D Vertical ReRAM and NbO2 Threshold Selector with TiN Electrode,” 2013 IEEE International Electron Devices Meeting (IEDM), 2013.
S. Lee, D. Lee, Jiyong Woo, E. Cha, J. Song, J. Park, H. Hwang, “Selector-less ReRAM with an Excellent Non-Linearity and Reliability by the Band-Gap Engineered Multi-Layer Titanium Oxide and Triangular Shaped AC Pulse,” 2013 IEEE International Electron Devices Meeting (IEDM), 2013.
D. Lee, J. Park, S. Park, Jiyong Woo, K. Moon, E. Cha, S. Lee, J. Song, Y. Koo, H. Hwang, “BEOL Compatible (300oC) TiN/TiOx/Ta/TiN 3D nanoscale (~10nm) IMT Selector,” 2013 IEEE International Electron Devices Meeting (IEDM), 2013.
2012
Jiyong Woo, Jubong Park, Jungho Shin, Godeuni Choi, Seonghyun Kim, Wootae Lee, Sangsu Park, Daeseok Lee, Euijun Cha, and Hyunsang Hwang “Bidirectional Selection Device Characteristics of Ultra-Thin (<3 nm) TiO2 layer for 3D Vertically Stackable ReRAM Application,” IEEE Silicon Nanoelectronics Workshop 2012 (SNW), Oral presentation, 2012.
Jiyong Woo, Seungjae Jung, Jubong Park, Seonghyun Kim, Wootae Lee, Daeseok Lee, Euijun Cha, and Hyunsang Hwang, “Improved Switching Uniformity in Ge2Sb2Te5 Based Resistive Switching Memory Device by Using Internal Resistor,” 19th Korea Conference on Semiconductor (KCS), Oral presentation, 2012.
S. Kim, X. Liu, J. Park, S. Jung, W. Lee, Jiyong Woo, J. Shin, G. Choi, C. Cho, S. Park, D. Lee, E. -j. Cha, B. -H. Lee, H. D. Lee, S. G. Kim, S. Jung, H. Hwang, “Ultrathin (<10nm) Nb2O5/NbO2 Hybrid Memory with Both Memory and Selector Characteristics for High Density 3D Vertically Stackable RRAM Applications,” 2012 Symposia on VLSI Technology and Circuits (VLSI), 2012.
W. Lee, J. Park, J. Shin, Jiyong Woo, S. Kim, G. Choi, S. Jung, S. Park, D. Lee, E. Cha, H.D. Lee, S.G. Kim, S. Chung, H. Hwang, “Varistor-type Bidirectional Switch (JMAX>107A/cm2, Selectivity~104) for 3D Bipolar Resistive Memory Arrays,” 2012 Symposia on VLSI Technology and Circuits (VLSI), 2012.
Sangsu Park, Jubong Park, Seonghyun Kim, Wootae Lee, Jungho Shin, Daeseok Lee, Godeuni Choi, Jiyong Woo, Euijun Cha, Byoung Hun Lee, and Hyunsang Hwang, “Programmable Analog Circuits with Multi-level Memristive device,” 43rd IEEE Semiconductor Interface Specialists Conference (SISC), 2012.
G. Choi, D. Lee, Jiyong Woo, and H. Hwang, “TiOx Layer Engineering for Producing Non-Linear Characteristic in HfOx-based Resistive Random Access Memory,” 43rd IEEE Semiconductor Interface Specialists Conference (SISC), 2012.
S. Park, H. Kim, M. Choo, J. Noh, A. Sheri, S. Jung, K. Seo, J. Park, S. Kim, W. Lee, J. Shin, D. Lee, G. Choi, Jiyong Woo, E. Cha, J. Jang, C. Park, M.Jeon, B. Lee, B.H. Lee, H. Hwang, “RRAM-based Synapse for Neuromorphic System with Pattern Recognition Function,” 2012 IEEE International Electron Devices Meeting (IEDM), 2012.
2011
Jiyong Woo, Seungjae Jung, Sharif Md. Sadaf, Euijun Cha, and Hyunsang Hwang, “Effect of Interfacial oxide layer on Switching Uniformity of Ge2Sb2Te5 Based Resistive Switching Memory Device,” 2011 International Conference on Solid State Device and Materials (SSDM), Oral presentation, 2011.
D. Lee, J. Park, S. Jung, G. Choi, J. M. Lee, M. Siddik, J. Shin, S. Kim, Jiyong Woo and H. Hwang, “switches with high switch speed and reliability for cross point array applications,” 2011 International Conference on Solid State Devices and Materials (SSDM), 2011.
S. M. Sadaf, X. Liu, S. H. Choudhury, J. Shin, Jiyong Woo, M. Siddik and H. Hwang, “Highly Uniform and Reliable Switching Properties in NbOx Based RRAM Devices,” 2011 International Conference on Solid State Devices and Materials (SSDM), 2011.
S. Jung, M. Siddik, W. Lee, J. Park, X. Liu, Jiyong Woo, G. Choi, J. Lee, N. Lee,Y. Jang, H. Hwang, “Thermally-assisted Ti/Pr0.7Ca0.3MnO3 ReRAM with Excellent Switching Speed and Retention Characteristics,” 2011 IEEE International Electron Devices Meeting (IEDM), 2011.
J. Park, W. Lee, M. Choi, S. Jung, M. Son, S. Kim, S. Park, J. Shin, D. Lee, Jiyong Woo, G. Choi, E. Cha, T. Lee, H. Hwang, “Quantized Conductive Filament Formed by Limited Cu Source in Sub-5nm Era,” 2011 IEEE International Electron Devices Meeting (IEDM), 2011.