A. George, W. Shim, M. Je, J. Lee, “A 1V 46nF/10MΩ Input-Range Digital-Intensive Reconfigurable RC-to-Digital Converter with Parasitic-Insensitive Femto-Farad Baseline Capacitance Sensing in 0.18μm CMOS,” IEEE Symposium on VLSI Circuits, 2018.
VDD: 1V & Power: 140μW
Sensor type: Capacitive & Resistive
Input range: 46nF / 10MΩ
Capacitance resolution: 114aF
Temp. range: -50 to 125˚C
Temp. coefficient: <64.2 ppm/˚C
Chip area: 0.175mm²
S. Baik, T. Seal, S. Lee, G. Kim, S-H Cho, A. George, J. Lee, “A 2.54μJ∙ppm2-FOMS Supply- and Temperature-Independent Time-Locked ΔΣ Capacitance-to-Digital Converter in 0.18-μm CMOS,” IEEE Symposium on VLSI Circuits, 2022.
VDD: 1.2 to 2.2V & Power: 42.7μW
Capacitance resolution: 70.5aF
FOMS/FOMW: 2.54uJ〮ppm² / 74fJ/c-s
Temp. coefficient: 49.1ppm/˚C
Supply sensitivity: ±0.55%
Chip area: 0.2mm²