S. Lee, A. George, and J. Lee, “A 110dB-CMRR 100dB-PSRR Multi-channel Neural Recording Amplifier System Using Differentially Regulated Rejection Ratio Enhancement in 0.18um CMOS,” ISSCC, 2018.
VDD: 1.5V & Power: 51.7μW
16 Channel neural recording
Flat-band gain: 40dB(10-10kHz)
Input referred noise: 3μVrms
CMRR: 110dB @1kHz
PSRR: 100dB @1kHz
S. Lee, Y. Choi, G. Kim, A. George, and J. Lee, “A 0.7V 17fJ/step-FOMW 178.1dB-FOMSNDR 10kHz-BW 560mVPP True-ExG Biopotential Acquisition System with Parasitic-Insensitive 421MΩ Input-Impedance in 0.18μm-CMOS,” ISSCC, 2022.
T. Seol, S. Lee, G.Kim, A.George and J. Lee, “A 1V 136.6dB-DR 4kHz-BW ΔΣ Current-to-Digital Converter with a Truncation-Noise-Shaped Baseline-Servo-Loop in 0.18um CMOS,” ISSCC, 2023.
VDD: 1V & Power: 260.4μW
Dynamic Range: 136.6dB
Maximum Input: 200μA
Input referred noise: 29pArms
Bandwidth: 4kHz
SNDR: 96.3dB, SFDR: 109.2dB
G. Kim, S. Lee, T. Seol, A. George, and J. Lee, “A 1V-Supply, 1.85Vpp-Input-Range, 1kHz-BW, 181.9dB-FOMDR, 179.4dB-FOMSNDR, 2nd-Order Noise-Shaping SAR-ADC with Enhanced-Input-Impedance in 0.18μm CMOS,” ISSCC, 2023.
VDD: 1V & Power: 9.29μW
Input referred noise: 4.69μVrms
Input Range: 1.85Vpp
Input Impedance: >30MΩ @ DC
FOMSNDR: 179.4dB
FOMDR: 181.9dB
T. Seol, G.Kim, S. Lee and J. Lee, “A Hybrid Recording System with 10kHz-BW 630mVPP 84.6dB-SNDR 173.3dB-FOMSNDR and 5kHz-BW 114dB-DR for Simultaneous ExG and Biocurrent Acquisition,” ISSCC, 2024.
VDD: 0.8V & Power: 13.5μW
Simultaneous V & I Recording
SNDR(voltage mode): 84.6dB
SFDR(voltage mode): 101dB
FOMSNDR: 173.3dB
DR(current mode): 114dB
S. Lee, T. Seol, G.Kim and J. Lee, “A 97dB-PSRR 178.4dB-FOMDR Calibration-Free VCO-ΔΣ ADC Using a PVT-Insensitive Frequency-Locked Differential Regulation Scheme for Multi-Channel ExG Acquisition,” VLSI, 2024.
VDD: 1V & Power: 9.29μW
Input referred noise: 5.5μVrms
PSRR: >97dB @ 1kHz
Input Impedance: >211MΩ @ DC
FOMSNDR: 174.2dB
FOMDR: 178.4dB