[39] Ick-Joon Park* et al., " Interface Tailoring ~" (Under Review)

[38] Ick-Joon Park* et al., " Electronic Band ~" (Under Review)

[37] Ick-Joon Park* et al., " Wafer-Scale 3D ~" (Under Review)

[36] Ick-Joon Park* et al., " Interfacial ~" (Under Review)

[35] Ick-Joon Park* et al., " Band Offset at  ~" (Under Review)

[34] Ick-Joon Park* et al., "Quasi 2D ~" (Under Review)

[33] Hyo-Won Jang, Go-Eun Kim, Mi-Jeong Kim, Joong Bum Rhim, Tae In Kim, Hyuck-In Kwon*, and Ick-Joon Park*, Strategic Defect Engineering at the Buried Interface for Metal-Halide Transistors, Materials Horizons 12, 10218-10230, 2025. (IF:12.2, JCR <8.8%)

[32] Go-Eun Kim, Mi-Jeong Kim, Tae In Kim, Hyuck-In Kwon*, and Ick-Joon Park*, Vacancy-Modulated Vertical Heterojunction for High-Performance Self-Driven Photodetectors, Chemical Engineering Journal 523, 168640, 2025. (IF:13.2, JCR <3.0%)

[31] Ha-Eun Dang§, Mi-Jeong Kim§, Tae In Kim*, and Ick-Joon Park*, Band Offset Analysis at Two-Dimensional Molybdenum Disulfide/Boron Nitride Heterointerface for Non-Volatile Memory Applications, Journal of Alloys and Compounds 1010, 178160, 2025. (IF:5.8, JCR <8.3%)

[30] Joon-Young Lee, Tae In Kim, Hyuck-In Kwon*, and Ick-Joon Park*, Surface Crystallization Effects on Tellurium Oxide Thin Films for Low-Power Complementary Logic Circuit Applications, Applied Surface Science 669, 160536, 2024. (IF:7.392, JCR <2.4%)

[29] Yeong-Gil Kim†, Chae-Eun Oh†, Ye-Lim Han, Dong-Ho Lee, Joon-Young Lee, Kyoung Seok Son, Jun Hyung Lim, Ick-Joon Park, Sang-Hun. Song*, and Hyuck-In Kwon*, Effects of indium composition ratio on electrical stability of top-gate self-aligned coplanar IGZO TFTs under self-heating stress conditions, Journal of Semiconductor Technology and Science 24, 379-386, 2024. (IF:0.5, JCR <93.3%)

[28] Hyun-Ah Lee, Tae In Kim, Hyuck-In Kwon*, and Ick-Joon Park*, Effects of Solution Processable CuI Thin Films with Al2O3-Based Sandwiched Architecture for High-Performance p-Type Transistor Applications, Journal of Materials Chemistry C 12, 6457-6468, 2024. (IF:6.4, JCR <19.7%)

[27] Jong-Sang Oh, Tae In Kim, Hyuck-In Kwon*, and Ick-Joon Park*, Strain Modulation Effects on Two-Dimensional Tellurium for Advanced p-Type Transistor Applications, Applied Surface Science 651, 159288, 2024. (IF:7.392, JCR <2.4%)

[26] Tae In Kim*, Hyun-Ah Lee, Hyuck-In Kwon*, and Ick-Joon Park*, Band Alignment of γ-Phase CuI/high-k Al2O3 Heterointerface by X-Ray Photoelectron Spectroscopy, Surfaces and Interfaces 46, 104190, 2024. (IF:6.137, JCR <11.8%)

[25] Ick-Joon Park* and Tae In Kim*, Tunable Band Alignment of Phase-Engineered Two-Dimensional MoS2 Monolayers, ACS Applied Electronic Materials 5, 6212-6220, 2023. (IF:4.7, JCR <27.5%)

[24] Seung-Hyun Lim, Tae In Kim, Ick-Joon Park*, and Hyuck-In Kwon*, Synthesis of a Tellurium Semiconductor with an Organic-Inorganic Hybrid Passivation Layer for High-Performance p-Type Thin Film Transistors, ACS Applied Electronic Materials 5, 4816-4825, 2023. (IF:4.7, JCR <27.5%)

[23] Kie Yatsu, Hyun-Ah Lee, Ick-Joon Park*, and Hyuck-In Kwon*, Effects of High-Energy X-Ray Irradiation on the Electrical and Chemical Properties of In-Ga-Sn-O Thin Films with Al2O3 Passivation Layer for Thin-Film Transistor Applications, ACS Applied Electronic Materials 5, 2528-2537, 2023. (IF:4.7, JCR <27.5%)

[22] Ick-Joon Park* and Tae In Kim*, Band Alignment of 2H-Phase Two-Dimensional MoS2/Graphene Oxide van der Waals Heterojunction, Journal of Alloys and Compounds 936, 168244, 2023. (IF:6.371, JCR <5.7%)

[21] Seung-Hyun Lim, Ick-Joon Park*, and Hyuck-In Kwon*, Effects of Rapid Thermal Annealing Temperature on NO2 Gas Sensing Properties of p-Type Mixed Phase Tin Oxide Thin Films, Ceramics International 49, 8478-8486, 2023. (IF:5.532, JCR <8.62%)

[20] Hyun-Ah Lee, Kie-Yatsu, Tae In Kim, Hyuck-In Kwon*, and Ick-Joon Park*, Synthesis of Vacancy-Controlled Copper Iodide Semiconductor for High-Performance p-Type Thin-Film Transistors, ACS Applied Materials & Interfaces 14, 56416-56426, 2022. (IF:10.383, JCR <14.06%)

[19] Ick-Joon Park§, Tae In Kim§, and Sung-Yool Choi*, Charge Transfer Dynamics of Doped Graphene Electrodes for Organic Light-Emitting Diodes, ACS Applied Materials & Interfaces 14, 43907-43916, 2022. (IF:10.383, JCR <14.06%)

[18] Kang-Hwan Bae, Seung-Hyun Lim, Kie-Yatsu, Ick-Joon Park*, and Hyuck-In Kwon*, Effects of hydrogen plasma treatment on the physical and chemical properties of tin oxide thin films for ambipolar thin-film transistor applications, Ceramics International 48, 24540-24549, 2022. (IF:5.532, JCR <8.62%)

[17] Kie-Yatsu, Hyun-Ah Lee, Dae Hwan Kim, Ick-Joon Park*, and Hyuck-In Kwon*, Highly Stable Oxide Thin-Film Transistors-Based Complementary Logic Circuits under X-Ray Irradiation, ACS Applied Electronic Materials 4, 3606-3614, 2022. (IF:4.7, JCR <27.5%)

[16] Seong-Hyun Hwang, Kie-Yatsu, Dong-Ho Lee, Ick-Joon Park*, and Hyuck-In Kwon*, Effects of Al2O3 surface passivation on the radiation hardness of IGTO thin films for thin-film transistor applications, Applied Surface Science 578, 152096, 2022. (IF:7.392, JCR <2.5%)

[15] Tae In Kim and Ick-Joon Park*, Selectively Defect Healed Graphene Electrodes for Tungsten Diselenide Thin-Film Transistors, Advanced Electronic Materials 8, 2100729, 2022. (IF:7.633, JCR <15.84%)

[14] Tae In Kim, Ick-Joon Park, Sumin Kang, Taek-Soo Kim, and Sung-Yool Choi*, Enhanced Triboelectric Nanogenerator Based on Tungsten Disulfide via Thiolated Ligand Conjugation, ACS Applied Materials & Interfaces 13, 21299-21309, 2021. (IF:10.383, JCR <14.06%)

[13] Tae In Kim, Ick-Joon Park, and Sung-Yool Choi*, Synthesis of Ultrathin Metal Nanowires with Chemically Exfoliated Tungsten Disulfide Nanosheets, Nano Letters 20, 3740-3746, 2020. (IF:12.262, JCR <7.76%)

[12] Tae In Kim, Jayoung Kim, Ick-Joon Park, Kyung-Ok Cho, and Sung-Yool Choi*, Chemically exfoliated 1T-phase transition metal dichalcogenide nanosheets for transparent antibacterial applications, 2D Materials 6, 025025, 2019. (IF:7.14, JCR <14.49%)

[11] Ick-Joon Park, Tae In Kim, Youngjun Woo, Gi-Woong Shim, Sumin Kang, Taek-Soo Kim, and Sung-Yool Choi*, Stretchable Thin-Film Transistors with Molybdenum Disulfide Channels and Graphene electrodes, Nanoscale 10, 16069-16078, 2018. (IF:6.97, JCR <11.82%)

[10] Ick-Joon Park, Tae In Kim, Taeshik Yoon, Sumin Kang, Hyunsu Cho, Nam Sung Cho, Jeong-Ik Lee, Taek-Soo Kim, and Sung-Yool Choi*, Flexible and Transparent Graphene Electrode Architecture with Selective Defect Decoration for Organic Light-Emitting Diodes, Advanced Functional Materials 28, 1704435, 2018. (IF:15.621, JCR <3.04%)

[9] Sung Yoon Min, Changsoon Cho, Gi Woong Shim, Ick-Joon Park, Dae Yool Jung, Youngjun Woo, Jung-Yong Lee, and Sung-Yool Choi*, Two-dimensional sheet resistance model for polycrystalline graphene with overlapped grain boundaries, FlatChem 7, 19-25, 2018. (IF:6.2, JCR <26.2%)

[8] Ick-Joon Park, Tae In Kim, In-Tak Cho, Chang-Woo Song, Ji-Woong Yang, Hongkeun Park, Woo-Seok Cheong, Sung Gap Im, Jong-Ho Lee, and Sung-Yool Choi*, Graphene electrode with tunable charge transport in thin-film transistors, Nano Research 11, 274-286, 2018. (IF:8.515, JCR <8.45%)

[7] Tae In Kim, Buki Kwon, Jonghee Yoon, Ick-Joon Park, Gyeong Sook Bang, YongKeun Park, Yeon-Soo Seo, and Sung-Yool Choi*, Antibacterial Activities of Graphene Oxide−Molybdenum Disulfide Nanocomposite Films, ACS Applied Materials & Interfaces 9, 7908-7917, 2017. (IF:8.097, JCR <8.95%)

[6] Hamin Park, Ick-Joon Park, Dae Yool Jung, Khang June Lee, Sang Yoon Yang, and Sung-Yool Choi*, Polymer-free graphene transfer for enhanced reliability of graphene field-effect transistors, 2D Materials 3, 021003, 2016. (IF:6.937, JCR <9.27%)

[5] Taeshik Yoon, Jae-Han Kim, Jun Hyung Choi, Dae Yool Jung, Ick-Joon Park, Sung-Yool Choi, Nam Sung Cho, Jeong-Ik Lee, Young-Duck Kwon, Seungmin Cho, and Taek-Soo Kim*, Healing Graphene Defects using Selective Electrochemical Deposition: Toward Flexible and Stretchable Devices, ACS Nano, 10, 1539-1545, 2016. (IF:13.942, JCR <3.08%)

[4] Ick-Joon Park, Chan-Yong Jeong, Myeonghun U, Sang-Hun Song, In-Tak Cho, Jong-Ho Lee, Eou-Sik Cho, and Hyuck-In Kwon*, Bias-stress-induced instabilities in p-type Cu2O thin-film transistors, IEEE Electron Device Letters 34, 647-649, 2013. (IF:3.023, JCR <11.49%)

[3] Chan-Yong Jeong, Ick-Joon Park, In-Tak Cho, Jong-Ho Lee, Eou-Sik Cho, Min Ki Ryu, Sang-Hee Ko Park, Sang-Hun Song, and Hyuck-In Kwon*, Investigation of the low-frequency noise behavior and its correlation with the subgap density of states and bias-induced instabilities in amorphous InGaZnO thin-film transistors with various oxygen flow rates, Japanese Journal of Applied Physics 51, 100206, 2012. (IF:1.067, JCR <63.77%)

[2] Ick-Joon Park, Chan-Yong Jeong, In-Tak Cho, Jong-Ho Lee, Eou-Sik Cho, Sang Jik Kwon, Bosul Kim, Woo-Seok Cheong, Sang-Hun Song, and Hyuck-In Kwon*, Fabrication of amorphous InGaZnO thin film transistor-driven flexible thermal and pressure sensors, Semiconductor Science and Technology 27, 105019-1-105019-6, 2012. (IF:1.921, JCR <20.78%)

[1]  In-Tak Cho, Ick-Joon Park, Dongshik Kong, Dae-Hwan Kim, Jong-Ho Lee, Sang-Hun. Song, and Hyuck-In Kwon*, Extraction of the channel mobility in InGaZnO TFTs using multi-frequency capacitance-voltage Method, IEEE Electron Device Letters 33, 815-817, 2012. (IF:2.789, JCR <10.49%) 

[50] Ha-Eun Dang, Mi-Jeong Kim, Ick-Joon Park, Tae In Kim, “Two-Dimensional Te/MoS2 Based Heterojunction Photodetector Application”, ICEIC 2026, Macau, China, Jan. 18-21, 2026.

[49] Go-Eun Kim, Hyo-Won Jang, Ick-Joon Park, Tae In Kim, Hyuck-In Kwon, “Hydrogen-Assisted Defect Engineering for High-Performance CuI Thin-Film Transistors”, ICEIC 2026, Macau, China, Jan. 18-21, 2026.

[48] Go-Eun Kim, Ick-Joon Park, Tae In Kim, Hyuck-In Kwon, “Vacancy-Engineered CuI/IGTO Vertical Heterojunctions for Self-Powered UV Photodetectors”, ICEIC 2026, Macau, China, Jan. 18-21, 2026. 

[47] Young-Roh Shin, Ick-Joon Park, and Tae In Kim, "Solution-Processed MoSe2 RRAM with Enhanced Switching for Multi-Bit Non-Volatile Memory", ICAMD 2025, Busan, Korea, Dec. 8~12, 2025.

[46] Yeong. -Gwon. Jeong, Kie Yastu, Ick-Joon Park, and Hyuck-In Kwon, "Radiation Stability of Al₂O₃-Passivated IGTO Thin Film Transistors under High-Energy X-Ray Irradiation" ICCE-ASIA 2025, Busan, Korea, October. 27-29, 2025.

[45] Joo-Hyun Oh, Eun-Ha Kim, Chang-Hyeon Kim, Ick-Joon Park, and Tae-Jun Ha, "Temperature Sensors Based on Tellurium Thin-Film Transistors for Interactive Displays", IMID 2025, Busan, Korea, August 19~22, 2025.

[44] Hyeong-Min Kim, Kie Yatsu, Hyun-Ah Lee, Ick-Joon Park, and Hyuck-In Kwon, "Optimization of Al2O3 Passivation for Enhanced X-ray Radiation Stability in IGTO Thin-Film Transistors, ITC-CSCC 2025, Seoul, Korea, Jul. 7~10, 2025.

[43] Go-Eun Kim, Seung-Hyun Lim, Ick-Joon Park, Tae In Kim, and Hyuck-In Kwon, "Strain-Engineered Tellurium Thin-Film Transistors Using Organic–Inorganic Hybrid Passivation", ITC-CSCC 2025, Seoul, Korea, Jul. 7~10, 2025.

[42] Ha-Eun Dang, Jun Kim, Mi-Jeong Kim, Seo-Yeon Kim, Ick-Joon Park, and Tae In Kim, "MoS2/BN/BCN van der Waals Stack for High Performance NAND Flash Memory", ITC-CSCC 2025, Seoul, Korea, Jul. 7~10, 2025.

[41] Young-Roh Shin, Sujin Kim, Ga Yoon Lee, Chaeyeon Byeon, Ick-Joon Park, and Tae In Kim, "Defect-Engineered Graphene for p-Type Tungsten Diselenide Transistors", ITC-CSCC 2025, Seoul, Korea, Jul. 7~10, 2025.

[40] Hyo-Won Jang, Hyun-Ah Lee, Tae In Kim, Ick-Joon Park, and Hyuck-In Kwon, “Enhancing P-Type Transistor Performance through Al2O3-Sandwiched CuI Thin Films”, ICEIC 2025, Osaka, Japan, Jan. 19~22, 2025.

[39] Go-Eun Kim, Hyun-Ah Lee, Tae In Kim, Ick-Joon Park, and Hyuck-In Kwon, “Vacancy Engineering of CuI Semiconductor for p-Type Thin-Film Transistors”, ICEIC 2025, Osaka, Japan, Jan. 19~22, 2025.

[38] Chang-Hyeon Kim, Jong-Sang Oh, Tae In Kim, Ick-Joon Park, and Hyuck-In Kwon, “Advancements in Electrical Performance of P-type Tellurium Thin-Film Transistors through Strain Modulation”, ICEIC 2025, Osaka, Japan, Jan. 19~22, 2025.

[37] Joon-Young Lee, Tae In Kim, Ick-Joon Park, and Hyuck-In Kwon, “Enhancement of Low-Power Complementary Logic Circuit Using Surface Crystallization Effects on Tellurium Oxide Thin Films”, ICEIC 2025, Osaka, Japan, Jan. 19~22, 2025.

[36] Young-Roh Shin, Ha-Eun Dang, Tae In Kim, Ick-Joon Park, “High-Performance Tungsten Diselenide Transistors With Transparent Graphene Electrodes via Selective Defect Healing Technique”, ICEIC 2025, Osaka, Japan, Jan. 19~22, 2025.

[35] Ha-Eun Dang, Young-Roh Shin, Ick-Joon Park, Tae In Kim, “Investigation of Hexagonal Boron Nitride/Molybdenum Disulfide Heterojunction for NAND Flash Memory Applications”, ICEIC 2025, Osaka, Japan, Jan. 19~22, 2025.

[34] Joon-Young Lee, Jong-Sang Oh, Tae In Kim, Ick-Joon Park, and Hyuck-In Kwon, “Improvement of Electrical Performances of p-type Tellurium Thin-Film Transistor Using Strain Modulation Technique”, IMID 2024, Jeju, Korea, August 20-23, 2024.

[33] Hyo-Won Jang, Hyun-Ah Lee, Tae In Kim, Ick-Joon Park, and Hyuck-In Kwon, “High-Performance CuI p-Type Thin-Film Transistors with ALD Al2O3-Based Sandwiched Structure”, IMID 2024, Jeju, Korea, August 20-23, 2024.

[32] Hyun-Ah Lee, Kie Yatsu, Tae In Kim, Ick-Joon Park, and Hyuck-In Kwon, “Vacancy Engineering for High-Performance p-Type CuI Thin-Film Transistors,” ICSE 2023, Busan, Korea, Nov. 19-24, 2023.

[31] Ick-Joon Park, “Vacancy Engineering of Solution Processable Copper Iodide for High-Performance p-type Transistors”, IMID 2023, Busan, Korea, August 22-25, 2023. (Invited)

[30] Jong-Sang Oh, Seung-Hyun Lim, Joon-Young Lee, Ick-Joon Park, and Hyuck-In Kwon, “Implementation of Ambipolar Tin Oxide Thin-Film Transistors using Hydrogen Plasma Treatment”, AWAD 2023, Yokohama, Japan, July 10-11, 2023.

[29] Hyun-Ah Lee, Hyo-Won Jang, Tae In Kim, Ick-Joon Park, and Hyuck-In Kwon, “Vacancy Engineering of CuI Semiconductor for p-Type Thin-Film Transistors”, AWAD 2023, Yokohama, Japan, July 10-11, 2023.

[28] Hyun-Ah Lee, Sung-Hyun Hwang, Hyo-Won Jang, Ick-Joon Park, and Hyuck-In Kwon, “Surface Passivation Effects on the Radiation Tolerance of IGTO Thin-Film Transistors under Proton Irradiation”, AWAD 2023, Yokohama, Japan, July 10-11, 2023.

[27] Hyo-Won Jang, Hyun-Ah Lee, Tae In Kim, Ick-Joon Park, and Hyuck-In Kwon, “Vacancy Engineered Copper Iodide Semiconductor for p-Type Thin-Film Transistors”, IEEE-NANO 2023, Jeju, Korea, July 2-5, 2023.

[26] Tae In Kim, Ick-Joon Park, and Sung-Yool Choi, Synthesis of Ultrathin Copper Nanowires Using Chemically-Exfoliated TMD Nanosheets, ICAMD 2019, Jeju, Korea, Dec. 10-13, 2019.

[25] Ick-Joon Park, Hamin Park, Dae Yool Jung, Youngjun Woo, Sang Yoon Yang, and Sung-Yool Choi, “Graphene and 2D Materials for Flexible Display Application”, IMID 2019, Gyeongju, Korea, August 27-30, 2019.

[24] Tae In Kim, Ick-Joon Park, Jayoung Kim, and Sung-Yool Choi, “1T-Phase Transition Metal Dichalcogenides based Transparent Film for Biomedical Displays”, Nano Korea 2019, Goyang, Korea, July 2-5, 2019.

[23] Ick-Joon Park, Hamin Park, Dae Yool Jung, Sang Yoon Yang, and Sung-Yool Choi, “Engineering Graphene Electrodes for Flexible Display Applications”, 1&2DM CONFERENCE & EXHIBITION, Tokyo, Japan, January 29-30, 2019.

[22] Tae In Kim, Ick-Joon Park, Jayoung Kim, and Sung-Yool Choi, “1T-phase Transition Metal Dichalcogenide Nanosheet based Antimicrobial Applications for Display Device”, IMID 2018, Busan, Korea, August 28-31, 2018.

[21] Ick-Joon Park, Youngjun Woo, Gi Woong Shim, Woonggi Hong, Sang Yoon Yang, and Sung-Yool Choi, “Graphene and 2D Materials for Display Applications”, IUMRS-ICEM 2018, Daejeon, Korea, August 22, 2018.

[20] Ick-Joon Park, Youngjun Woo, Gi Woong Shim, Woonggi Hong, Sang Yoon Yang, and Sung-Yool Choi, “Graphene and 2D Materials for Display Technology”, Graphene 2018, Dresden, Germany, June 26, 2018.

[19] Ick-Joon Park, Tae In Kim, Sumin Kang, Taeshik Yoon, Min-Sun Cho, Taek-Soo Kim, and Sung-Yool Choi, “Graphene Electrode Architecture with Selective Defect Healing: Toward Flexible, Stretchable and Transparent Displays”, ICAMD 2017, Jeju, Korea, December 5-8, 2017.

[18] Ick-Joon Park, Tae In Kim, Hongkeun Park, Sung Gap Im, and Sung-Yool Choi, “Tunable Charge Transport of Graphene Electrode in Metal-Oxide based Thin-Film Transistors”, IMID 2017, Busan, Korea, August 28-31, 2017.

[17] Tae In Kim, Ick-Joon Park, Buki Kwon, YongKeun Park and Sung-Yool Choi, “Two-Dimensional Nanocomposite Based Antibacterial Film for Display Device Applications”, IMID 2017, Busan, Korea, August 28-31, 2017.

[16] Hamin Park, Sang Yoon Yang, Dae Yool Jung, Ick-Joon Park, Sung-Yool Choi, “Interface Engineering for High Performance Graphene Devices”, 2017 SNU Winter Workshop on 2D Materials, Seoul, Korea, Feb. 2, 2017.

[15] Ick-Joon Park, Dohong Kim, Tae In Kim, Young-Wook Ha, Kyung Cheol Choi and Sung-Yool Choi, “Investigation of Cs2CO3 Doped Transparent Graphene Electrode as a Cathode of Inverted Organic Light Emitting Diodes”, IMID 2016, Jeju, Korea, August 23-26, 2016.

[14] Tae In Kim, Buki Kwon, Ick-Joon Park and Sung-Yool Choi, “Enhanced antibacterial properties of graphene oxide-MoS2 nanocomposite film”, IMID 2016, Jeju, Korea, August 23-26, 2016.

[13] Ick-Joon Park, Tae In Kim, In-Tak Cho, Jong-Ho Lee and Sung-Yool Choi, “Low-Frequency Noise Behavior in a-IGZO TFTs with n-Type Doped Graphene S/D Electrodes via Cs2CO3”, ICAMD 2015, Jeju, Korea, December 7-9, 2015.

[12] Tae In Kim, Gyung Sook Bang, Ick-Joon Park, Buki Kwon and Sung-Yool Choi, “Antibacterial effect of graphene-based nanosheets stacked with chemically exfoliated MoS2”, ICAMD 2015, Jeju, Korea, December 7-9, 2015.

[11] Sang Yoon Yang, Ick-Joon Park, Dae Yool Jung, Hamin Park and Sung-Yool Choi, “Recent Advances in Interface Engineering and Transfer Process for Graphene Devices”, Nano Korea 2015, Seoul, Korea, Jul. 1~3, 2015.

[10] Ick-Joon Park, Chang-Woo Song, Young-Wook Ha, Hamin Park, Tae In Kim, Sung-Yool Choi, “The Effect of N-type Doped Graphene via Cs2CO3 for S/D Electrodes in Amorphous InGaZnO Thin-Film Transistors”, Nano Korea 2015, Seoul, Korea, Jul. 1~3, 2015.

[9] Hamin Park, Ick-Joon Park, Young-Wook Ha, Sung-Yool Choi, “Bias stress effect in graphene field-effect transistors based on passivation layer”, Nano Korea 2015, Seoul, Korea, Jul. 1~3, 2015.

[8] Chan Hak Yu, Choong Ki Kim, Gwang Hyuk Shin, Hamin Park, Ick-Joon Park, Yang-Kyu Choi, Sung-Yool Choi, “Low-Frequency Noise in Hysteresis-Free Multilayer MoS2 FETs.”, Nano Korea 2015, Seoul, Korea, Jul. 1~3, 2015.

[7] Young-Wook Ha, Ick-Joon Park, Hamin Park, Khang-Jun. Lee, Tae In Kim, Sung-Yool. Choi, “Investigation of Cs2CO3 doping defects in CVD grown graphene”, Nano Korea 2015, Seoul, Korea, Jul. 1~3, 2015.

[6] Ick-Joon Park, Chang-Woo Song, Young-Wook Ha, Hamin Park, Sung-Yool Choi, “Investigation of Graphene N-type Doping Effects for S/D Electrodes via Cs2CO3 Doping in Amorphous InGaZnO Thin-Film Transistors”, Graphene 2015, Bilbao, Spain, Mar. 10~13, 2015.

[5] Young-Wook Ha, Ick-Joon Park, Hamin Park, Sung-Yool Choi, “Work-function engineering of CVD-grown graphene using Cs2CO3”, Graphene 2015, Bilbao, Spain, Mar. 10~13, 2015.

[4] Hamin Park, Ick-Joon Park, Young-Wook Ha, Sung-Yool Choi, “Bottom-gate graphene field-effect transistors with enhanced reliability based on passivation layer”, Graphene 2015, Bilbao, Spain, Mar. 10~13, 2015.

[3] Hamin Park†, Ick-Joon Park†, Sung-Yool Choi, “Investigation of bias-stress-induced instability in graphene field-effect transistor using new polymer-free transfer method”, ICEIC 2015, Singapore, Jan. 28~31, 2015.

[2] Hyuck-In Kwon, Chan-Yong Jeong, Ick-Joon Park, Myeonghun U. Sang-Hun Song, In-Tak Cho, and Jong-Ho Lee, “Fabrication of Electrical Characterization of P-type Oxide Thin-Film Transistors”, ICAE 2013, Jeju, Korea, Nov. 12-15, 2013.

[1] In-Tak Cho, Ick-Joon Park, Jong-Ho Lee, Sang-Hun Song, Hyuck-In Kwon, “Effect of subgap states on the channel mobility in amorphous indium-gallium-zinc oxide thin film transistors”, ICEIC 2012, Jeongseon, Korea, Feb. 1-3, 2012.

[28] Min Seok Kim, Jangguen Shin, Young-Roh Shin, Tae In Kim, and Ick-Joon Park, “Enhanced Electrical Performance of WSe2 Transistors with Defect-Healed Graphene Electrodes”, The 33th Korean Conference on Semiconductors, Jeongseon, Korea, Jan. 27~30, 2026.

[27] Jangguen Shin, Seo Yeon Kim, Su-Yeon Ye, Hyuck-In Kwon, Tae In Kim, and Ick-Joon Park, “Interfacial Electronic Structure of ALD-Grown Al2O3/CuI-Based Heterojunction”, The 33th Korean Conference on Semiconductors, Jeongseon, Korea, Jan. 27~30, 2026.

[26] Su-Yeon Ye, Min Seok Kim, Ha-Eun Dang, Ick-Joon Park, and Tae In Kim, “Vertically Stacked MoS2/Graphene Oxide van der Waals Heterointerface”, The 33th Korean Conference on Semiconductors, Jeongseon, Korea, Jan. 27~30, 2026.

[25] Hyeong-Min Kim, Hyo-Won Jang, Tae In Kim, Ick-Joon Park, and Hyuck-In Kwon, “Enhanced Electrical Performance of CuI Transistors through Hydrogen-induced Buried Interface Engineering”, The 33th Korean Conference on Semiconductors, Jeongseon, Korea, Jan. 27~30, 2026.

[24] Seo Yeon Kim, Ga-Ram Park, Jae-Yeon Kim, Ick-Joon Park, and Tae In Kim, “Development of CuI/In2Se3 pn Heterojunction for Optoelectronic Applications”, The 33th Korean Conference on Semiconductors, Jeongseon, Korea, Jan. 27~30, 2026.

[23] Go-Eun Kim, Tae-In Kim, Ick-Joon Park, and Hyuck-In Kwon, “Vacancy-Engineered CuI/IGTO Vertical Heterojunction for High-Performance Self-Powered Ultraviolet Photodetectors”, The 33th Korean Conference on Semiconductors, Jeongseon, Korea, Jan. 27~30, 2026.

[22] Mi-Jeong Kim, Ha-Eun Dang, Ga-Ram Park, Tae In Kim, and Ick-Joon Park, “Two-Dimensional MoS2/h-BN Heterostructures for NAND Flash Memory Device”, The 33th Korean Conference on Semiconductors, Jeongseon, Korea, Jan. 27~30, 2026.

[21] Ga-Ram Park, Jae-Yeon Kim, Mi-Jeong Kim, Ick-Joon Park, and Tae In Kim, “Phase Engineering of Two-Dimensional MoS2 Monolayers for Tuning Optical Properties”, The 33th Korean Conference on Semiconductors, Jeongseon, Korea, Jan. 27~30, 2026.

[20] 오주현, 김은하, 김창현, 박익준, 하태준, "텔루륨 박막트랜지스터의 온도 변화에 따른 전하 전이 특성 분석" 대한전자공학회 2025년도 추계종합학술대회, 곤지암, 대한민국, 2025년 11월 28일-29일. 

[19] 김건희, 장효원, 이제훈, 최병선, 박익준, 권혁인, "CuI 트랜지스터의 묻힌 채널/전극 계면에서의 상호보완적 결함 패시베이션" 대한전자공학회 2025년도 추계종합학술대회, 곤지암, 대한민국, 2025년 11월 28일-29일.

[18] 김형민, 김고은, 김태인, 박익준, 권혁인, "결함 제어 및 인터페이스 엔지니어링을 통한 CuI/IGTO 기반 자가구동 자외선 포토디텍터의 고성능화" 대한전자공학회 2025년도 추계종합학술대회, 곤지암, 대한민국, 2025년 11월 28일-29일.

[17] 정영권, 이준영, 김형민, 이제훈, 최병선, 박익준, 권혁인, "표면 결정화 기반 향상된 텔루륨 산화막 박막 트랜지스터와 저전력 CMOS 논리 회로 응용" 대한전자공학회 2025년도 추계종합학술대회, 곤지암, 대한민국, 2025년 11월 28일-29일.

[16] 김형민, 임승현, 김태인, 박익준, 권혁인, "유무기 하이브리드 패시베이션을 통한 텔루륨 박막 트랜지스터의 성능 및 안정성 향상" 대한전자공학회 2025년도 하계종합학술대회, 제주도, 대한민국, 2025년 6월 25일.

[15] 정영권, 임승현, 박익준, 권혁인, "급속 열처리 온도에 따른 p형 혼합 상 산화주석 박막의 NO₂ 가스 감지 특성 변화" 대한전자공학회 2025년도 하계종합학술대회, 제주도, 대한민국, 2025년 6월 25일.

[14] Joo-Hyun Oh, Eun-Ha Kim, Chang-Hyeon Kim, Ick-Joon Park, Tae-Jun Ha, “Tellurium-based gas sensors operating at room temperature for detection of NO down to ppb-level”, KSS 2025, Seoul, Korea, Apr. 2-3, 2025.

[13] Hyo-Won Jang, Hyun-Ah Lee, Tae In Kim, Ick-Joon Park, Hyuck-In Kwon, “High-Performance p-Type CuI TFTs with Al₂O₃ Sandwiched Structure”, KCS 2025, Jeongseon, Korea, Feb. 12-14, 2025.

[12] Go-Eun Kim, Hyun-Ah Lee, Tae In Kim, Ick-Joon Park, and Hyuck-In Kwon, “Advancements in Electrical Performance of P-type CuI Thin-Film Transistors through Vacancy Engineering”, KCS 2025, Jeongseon, Korea, Feb. 12-14, 2025.

[11] Joon-Young Lee, Hyun-Woo Lee, Tae In Kim, Ick-Joon Park, Hyuck-In Kwon, “Crystallization Effects on Tellurium Oxide Thin Films for Low-Power Complementary Logic Circuit”, KCS 2025, Jeongseon, Korea, Feb. 12-14, 2025.

[10] Hyun-Ah Lee, Hyo-Won Jang, Kie Yatsu, Ick-Joon Park, Hyuck-In Kwon, “Effects of Al2O3 Surface Passivation on the Radiation Stability of IGTO Thin Film Transistors under High-Energy X-ray Irradiation”, KCS 2024, Gyeongju, Korea, Jan. 24-26, 2024.

[9] Hyun-Ah Lee, Hyo-Won Jang, Tae In Kim, Ick-Joon Park, Hyuck-In Kwon, “Vacancy Engineering for High-Performance p-Type CuI Thin-Film Transistors”, KCS 2024, Gyeongju, Korea, Jan. 24-26, 2024.

[8] Jong-Sang. Oh, Joon-Young Lee, Seung-Hyun Lim, Tae In Kim, Ick-Joon Park, Hyuck-In Kwon, “High-Performance p-Type Tellurium Thin Film Transistors with Organic-Inorganic Hybrid Passivation Layer”, KCS 2024, Gyeongju, Korea, Jan. 24-26, 2024.

[7] Seung-Hyun Lim, Jong-Sang Oh, Ick-Joon Park, Hyuck-In Kwon, “Effects of Rapid Thermal Annealing Temperature on p-type NO2 Gas Sensing Properties of RF Sputtered Tin Oxide Thin Films”, The 30th Korean Conference on Semiconductors, Jeongseon, Korea, Feb. 13~15, 2023.

[6] Seung-Hyun Lim, Kang-Hwan Bae, Jong-Sang Oh, Ick-Joon Park, and Hyuck-In Kwon, “Implementation of Ambipolar Tin oxide Thin-Film Transistors using Hydrogen plasma Treatment”, The 30th Korean Conference on Semiconductors, Jeongseon, Korea, Feb. 13~15, 2023.

[5] Hyun-Ah Lee, Kie Yatsu, Chae-Eun Oh, Ick-Joon Park, and Hyuck-In Kwon, “Radiation Robust Oxide-TFT-Based Complementary Logic Circuits”, The 30th Korean Conference on Semiconductors, Jeongseon, Korea, Feb. 13~15, 2023.

[4] 황성현, 야쯔기에, 이동호, 배강환, 박익준, 권혁인, “Al2O3 보호막 층의 증착두께와 방법이 IGTO TFT의 내방사선성에 미치는 영향에 관한 연구”, The 29th Korean Conference on Semiconductors, Jeongseon, Korea, Jan. 24~26, 2022.

[3] Ick-Joon Park, Tae In Kim, Taeshik Yoon, Taek-Soo Kim, and Sung-Yool Choi, “Selective Decoration of Graphene Defects via Electroplating Method for Transparent and Flexible Electronics”, The 4th Korean Symposium on Graphene and 2D Materials, Buyeo, Korea, Apr. 6~7, 2017.

[2] Tae In Kim, Ick-Joon Park, YongKeun Park, and Sung-Yool Choi, “Label-Free Tracing and Antibacterial Mechanisms of Two-Dimensional Nanocomposite Film”, The 4th Korean Symposium on Graphene and 2D Materials, Buyeo, Korea, Apr. 6~7, 2017.

[1] Young-Wook Ha, Ick-Joon Park, Hamin Park, Sung-Yool Choi, “Cs2CO3 도핑에 따른 CVD 성장 그래핀의 일함수 제어”, The 2nd Korean Graphene Symposium, Buyeo, Korea, Mar. 26~27, 2015.