Publications

Viswanath G Akkili, Sanghyun Jeong, Frederick Aziadzo, Ashish A Patil, Minjae Sung, Jung-Sub Wi, Joon Sik Park, Hoon-Hwe Cho, Choong-Heui Chung, Jong Beom Ko, Dong-Eun Kim, Eui-Tae Kim, Jun-Hui Choi, R Thangavel, Jae-Hyun Lee, Sangyeob Lee , Fabrication and Defect-driven Analysis of CMOS Inverters using SnOx/ZnO TFTs: Implications for Balanced Performance, Journal of Alloys and Compounds, 1036, (2025), 182034 [Link]

Kim, Hwa Young; Cho, Seong-In; Shin, Dong Yeob; Chung, Kwun-Bum; Park, Sang-Hee Ko; Ko, Jong Beom*, Optimized Hydrogen-Supplying Gate Insulator for High-Mobility Indium Oxide TFTs via Atomic-Level Oxygen Reactant Engineering, Journal of Alloys and Compounds, 1020, (2025), 179353 [Link]

Ko, Jong Beom; Park, Sang-Hee Ko; Atomic layer deposition of multicomponent amorphous oxide semiconductors with sequential dosing of metal precursors. Materials Letters, 363, (2024), 136297 [Link]

Jeong, Wooseok; Cho, Seong-In; Park, Sang-Hee Ko; Ko, Jong Beom*, Modifying subgap states with hydrogen incorporation from source/drain alloys for oxide phototransistors, Materials Letters, 355, (2024), 135502 [Link]

Im, Youngjun; Cho, Seong-In; Kim, Jingyu; Woo, Namgyu; Ko, Jong Beom*; Park, Sang-Hee Ko*; Buffer Layer Engineering of Indium Oxide Based Trench TFT for Ultra High Current Driving. IEEE Electron Device Letters, (2023) [Link]

Jeon, Sori; Lee, Kwang-Heum; Lee, Seunghee; Cho, Seong-In; Hwang, Chi-Sun; Ko, Jong Beom*; Park, Sang-Hee Ko*; Contact Properties of a Low-resistance Aluminum-based Electrode with Metal Capping Layers in Vertical Oxide Thin-film Transistors, Journal of Materials Chemistry C, (2023) [Link]

 Ko, Jong Beom; Cho, Seong-In; Park, Sang-Hee Ko; Engineering a subnanometer interface tailoring layer for precise hydrogen incorporation and defect passivation for high-end oxide thin-film transistors, ACS Applied Materials & Interfaces, 15, (2023), 47799-47809 [Link]

Cho, Seong-In; Ko, Jong Beom; Lee, Seung Hee; Kim, Junsung; Park, Sang-Hee Ko; Remarkably stable high mobility self-aligned oxide TFT by investigating the effect of oxygen plasma time during PEALD of SiO2 gate insulator, Journal of Alloys and Compounds, 893, (2022), 162308 [Link]

Ko, Jong Beom; Lee, Seung Hee; Lee, Tae‐Ik; Lee, Sangmin; Kim, Jingyu; Kim, Hyeok; Kim, Taek‐Soo; Park, Sang‐Hee Ko;  Ultrathin, Flexible, and Transparent Oxide Thin‐Film Transistors by Delamination and Transfer Methods for Deformable Displays, Advanced Materials Technologies, 6, (2021), 2100431 [Link]

Lee, Seunghee; Kim, Miso; Mun, Geumbi; Ko, Jongbeom; Yeom, Hye-In; Lee, Gwang-Heum; Shong, Bonggeun; Park, Sang-Hee Ko;  Effects of Al precursors on the characteristics of indium–aluminum oxide semiconductor grown by plasma-enhanced atomic layer deposition, ACS Applied Materials & Interfaces, 13, (2021), 40134-40144 [Link]

Lee, Nayeun; Kim, Reehyang; Kim, Ju Young; Ko, Jong Beom; Park, Sang-Hee Ko; Kim, Sang Ouk; Brongersma, Mark L; Shin, Jonghwa; Self-assembled nano–lotus pod metasurface for light trapping, ACS Photonics, 8, (2021), 1616-1622 [Link]

Ko, Jong Beom; Lee, Seung-Hee; Park, Kyung Woo; Park, Sang-Hee Ko;  Interface tailoring through the supply of optimized oxygen and hydrogen to semiconductors for highly stable top-gate-structured high-mobility oxide thin-film transistors, RSC advances, 9, (2019), 36293-36300 [Link]

Park, Kyoung Woo; Jeon, Gukjin; Lee, Seunghee; Ko, Jong Beom; Park, Sang‐Hee Ko; Effects of Hydroxyl Group in AlOx Gate Insulator on the Negative Bias Illumination Instability of In‐Ga‐Zn‐O Thin Film Transistors, physica status solidi (a), 216, (2019), 1800737 [Link]

Kim, Jin‐Oh; Lee, Jeong‐Chan; Kim, Min‐Ji; Noh, Hyunwoo; Yeom, Hye‐In; Ko, Jong Beom; Lee, Tae Hoon; Ko Park, Sang‐Hee; Kim, Dong‐Pyo; Park, Steve; Inorganic Polymer Micropillar‐Based Solution Shearing of Large‐Area Organic Semiconductor Thin Films with Pillar‐Size‐Dependent Crystal Size, Advanced Materials, 30, (2018), 1800647 [Link]

Yeom, H-I; Ko, Jong Beom; Mun, Geumbi; Park, S-H Ko; High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition, Journal of Materials Chemistry C, 4, (2016), 6873-6880 [Link]

Lee, Han Eol; Kim, Seungjun; Ko, Jongbeom; Yeom, Hye‐In; Byun, Chun‐Won; Lee, Seung Hyun; Joe, Daniel J; Im, Tae‐Hong; Park, Sang‐Hee Ko; Lee, Keon Jae; Skin‐like oxide thin‐film transistors for transparent displays, Advanced Functional Materials, 26, (2016), 29-31 [Link]

Ko, Jong Beom; Yeom, Hye In; Park, Sang-Hee Ko; Plasma-enhanced atomic layer deposition processed SiO2 gate insulating layer for high mobility top-gate structured oxide thin-film transistors, IEEE Electron Device Letters, 37, (2015), 39-42 [Link]

Cho, Sung Haeng; Ko, Jong Beom; Ryu, Min Ki; Yang, Jong-Heon; Yeom, Hye-In; Lim, Sun Kwon; Hwang, Chi-Sun; Park, Sang-Hee Ko; Highly stable, high mobility Al: SnZnInO back-channel etch thin-film transistor fabricated using PAN-based wet etchant for source and drain patterning, IEEE Transactions on Electron Devices, 62, (2015), 3653-3657 [Link]