The global gallium nitride device market was valued at approximately USD 20.56 billion in 2019 and is expected to expand to around USD 39.74 billion by 2032, reflecting a compound annual growth rate (CAGR) of 5.20% from 2020 to 2032. In 2019, North America held a significant portion of the market, accounting for 35.89% of the total share. This growth trajectory indicates a strong demand for GaN devices across various applications in the coming years.
The gallium nitride (GaN) device market is experiencing significant growth, driven by increasing demand across various applications. This expansion reflects advancements in technology and the rising adoption of GaN devices in sectors such as telecommunications, automotive, and consumer electronics. North America is a key player in this market, showcasing a substantial share. Overall, the outlook for the GaN device market remains positive, with expectations for continued innovation and development in the coming years.
Infineon Technologies AG (Germany)
Efficient Power Conversion Corporation. (The U.S.)
EPISTAR Corporation (Taiwan)
GaN Systems (Canada)
MACOM (The U.S.)
Microsemi (The U.S.)
Mitsubishi Electric Corporation (Japan)
NICHIA CORPORATION (Japan)
Northrop Grumman Corporation (The U.S.)
NXP Semiconductors. (Netherland)
Qorvo, Inc (The U.S.)
Texas Instruments Incorporated. (The U.S.)
Toshiba Corporation (Japan)
https://www.fortunebusinessinsights.com/gallium-nitride-gan-devices-market-103367
The gallium nitride (GaN) device market is segmented by various factors, including device type, wafer size, component, application, end user, and geography. Device types encompass opto-semiconductor, power semiconductor, and RF semiconductor devices. Wafer sizes range from 2-inch to 6-inch and above. Key components include transistors, diodes, rectifiers, and power integrated circuits (ICs). Applications for GaN devices span light detection and ranging, wireless and electric vehicle charging, as well as radar and satellite radio frequencies. End users include sectors such as aerospace, defense, healthcare, renewables, and information and communication technology. Geographically, the market is divided into regions such as North America, Europe, Asia-Pacific, the Middle East, and the rest of the world, with specific countries like the U.S., Canada, China, and Germany highlighted for their device type contributions.
Expansion of the Telecommunications Sector to Boost Growth
The increasing demand for energy-efficient gallium nitride (GaN) devices is being driven by the rapid expansion of the telecommunications sector. Many internet service providers are now prioritizing lower latency through optical fiber connections, along with enhancing connectivity and network capacity. Additionally, the growing adoption of GaN devices in 5G infrastructure is expected to further accelerate gallium nitride device market growth in the coming years. However, the high costs associated with the maintenance and development of gallium nitride devices may pose a challenge to this growth.
Opto-semiconductor Device Segment to Grow Rapidly Backed by Increasing Usage in Lasers
Based on device type, the opto-semiconductor device segment procured the highest gallium nitride device market share in 2019. This growth is attributable to their increasing usage in various aerospace applications, such as Light Detection and Ranging (LiDAR) and pulsed lasers. Besides, they are used in optoelectronics, LEDs, lasers, photodiodes, and solar cells.
High Demand for Wireless Devices to Favor Growth in Europe
Geographically, North America generated USD 7.38 billion in 2019 because of the presence of numerous prominent manufacturers, such as MACOM, Cree, Inc., Northrop Grumman Corporation, Efficient Power Conversion Corporation, Microsemi, and others in this region.
Europe, on the other hand, is anticipated to grow significantly on account of the rising demand for wireless devices in Germany, France, and the U.K. In Asia Pacific, the rising demand for gallium nitride devices from emerging nations, such as India and China would aid growth.
January 2025 - Wolfspeed launched its Gen 4 MOSFET technology platform, delivering breakthrough performance for high-power applications, enhancing efficiency and reliability in real-world conditions.
November 2024 - Infineon introduced the world's first 300mm power gallium nitride (GaN) wafer technology at electronica 2024, marking a significant advancement in power electronics manufacturing.