The global gallium nitride device market was valued at USD 20.56 billion in 2019 and is expected to grow from USD 21.18 billion in 2020 to USD 39.74 billion by 2032, exhibiting a CAGR of 5.20% during the forecast period (2020–2032). In 2019, North America led the market, accounting for a 35.89% share.
GaN devices are increasingly favored over traditional silicon components due to their higher efficiency, faster switching speeds, and superior thermal performance. The ongoing adoption of 5G networks, the rising penetration of electric vehicles (EVs), and significant advancements in power electronics are among the key growth drivers.
Infineon Technologies AG (Germany)
Efficient Power Conversion Corporation. (The U.S.)
EPISTAR Corporation (Taiwan)
GaN Systems (Canada)
MACOM (The U.S.)
Microsemi (The U.S.)
Mitsubishi Electric Corporation (Japan)
NICHIA CORPORATION (Japan)
Northrop Grumman Corporation (The U.S.)
NXP Semiconductors. (Netherland)
Qorvo, Inc (The U.S.)
Texas Instruments Incorporated. (The U.S.)
Toshiba Corporation (Japan)
Expansion of the Telecommunications Sector to Boost Growth
The increasing demand for energy-efficient gallium nitride (GaN) devices is being driven by the rapid expansion of the telecommunications sector. Many internet service providers are now prioritizing lower latency through optical fiber connections, along with enhancing connectivity and network capacity. Additionally, the growing adoption of GaN devices in 5G infrastructure is expected to further accelerate gallium nitride device market growth in the coming years. However, the high costs associated with the maintenance and development of gallium nitride devices may pose a challenge to this growth.
Opto-semiconductor Device Segment to Grow Rapidly Backed by Increasing Usage in Lasers
Based on device type, the opto-semiconductor device segment procured the highest gallium nitride device market share in 2019. This growth is attributable to their increasing usage in various aerospace applications, such as Light Detection and Ranging (LiDAR) and pulsed lasers. Besides, they are used in optoelectronics, LEDs, lasers, photodiodes, and solar cells.
High Demand for Wireless Devices to Favor Growth in Europe
Geographically, North America generated USD 7.38 billion in 2019 because of the presence of numerous prominent manufacturers, such as MACOM, Cree, Inc., Northrop Grumman Corporation, Efficient Power Conversion Corporation, Microsemi, and others in this region.
Europe, on the other hand, is anticipated to grow significantly on account of the rising demand for wireless devices in Germany, France, and the U.K. In Asia Pacific, the rising demand for gallium nitride devices from emerging nations, such as India and China would aid growth.
https://www.fortunebusinessinsights.com/gallium-nitride-gan-devices-market-103367
January 2025 - Wolfspeed launched its Gen 4 MOSFET technology platform, delivering breakthrough performance for high-power applications, enhancing efficiency and reliability in real-world conditions.
November 2024 - Infineon introduced the world's first 300mm power gallium nitride (GaN) wafer technology at electronica 2024, marking a significant advancement in power electronics manufacturing.