Publications

Books

J. S. Speck and E. Farzana (Invited Editor), “Ultrawide Bandgap β-Ga2O3 Semiconductor: Theory and Applications,” American Institute of Physics (AIP), New York, (2023). https://doi.org/10.1063/9780735425033

Journals: Area-Ultrawide-bandgap Devices

10. S. Islam, A. Senarath, E. Farzana, D. Ball, A. Sengupta, N. Hendricks, A. Bhattacharyya, R. Reed, E. Zhang, J. Speck, D. Fleetwood, and R. Schrimpf, , "Single-Event Burnout in Vertical β-Ga2O3 Diodes with Pt/PtOx Schottky Contacts and High-κ Field-Plate Dielectrics," in IEEE Transactions on Nuclear Science (2024), doi: 10.1109/TNS.2024.3370190.

9. E. Farzana, S. Roy, N. S. Hendricks, S. Krishnamoorthy, and J. S. Speck, “Vertical PtOx/Pt/β-Ga2O3 Schottky diodes with high permittivity dielectric field plate for low leakage and high breakdown voltage,” Appl. Phys. Lett. 123, 192102 (2023). (Featured as Editor’s Pick in Applied Physics Letters)

8. E. Farzana, A. Bhattacharyya, N. S. Hendricks, T. Itoh, S. Krishnamoorthy, and J. S. Speck, “Oxidized Metal Schottky Contact with High-κ Dielectric Field Plate for Low-loss High-power Vertical β-Ga2O3 Schottky Diodes,” APL Materials 10, 111104 (2022). (Featured as Editor’s Pick in APL Materials)

7. E. Farzana, F. Alema, W. Y. Ho, A. Mauze, T. Itoh, A. Osinsky, and J. S. Speck, “Vertical β-Ga2O3 field plate Schottky barrier diode from metal-organic chemical vapor deposition,” Appl. Phys. Lett. 118, 162109 (2021).

6. E. Farzana, J. Wang, M. Monavarian, T. Itoh, K. S. Qwah, Z. J. Biegler, K. F. Jorgensen, and J. S. Speck, “Over 1 kV Vertical GaN-on-GaN p-n Diodes with Low On-Resistance using Ammonia Molecular Beam Epitaxy,” IEEE Electron Device Letters, 41 (12), 1806 (2020). (Featured as Editor’s Pick in IEEE Electron Device Letters)

5. E. Farzana, Z. Zhang, P. K. Paul, A. R. Arehart, and S. A. Ringel, “Influence of metal choice on (010) β-Ga2O3 Schottky diode properties,” Appl. Phys. Lett. 110 (20), 202102 (2017) (Featured as Editor’s Pick in Applied Physics Letters)

4. N. S Hendricks, E. Farzana, A. Islam, K. D. Leedy, K. Liddy, J. Williams, D. Dryden, A. Adams, J. S. Speck, K. Chabak, and A. J. Green, “Vertical metal-dielectric-semiconductor diode on (001) β-Ga2O3 with high-κ TiO2 interlayer exhibiting reduced turn-on voltage and leakage current and improved breakdown,” Appl. Phys. Express, 16, 071002, (2023).

3. R. M. Cadena, D. R. Ball, S. Islam, A. Senarath, E. X. Zhang, M. W. McCurdy, E. Farzana, J. S. Speck, N. Karom, A. O’Hara, B. R. Tuttle, S. T. Pantelides, A. F. Witulski, K. F. Galloway, M. L. Alles, R. A. Reed, D. M. Fleetwood, and R. D. Schrimpf, “Low-Energy Ion-Induced Single-Event Burnout in Gallium Oxide Schottky Diodes,” 70(4), 363, IEEE Trans Nucl Sci, (2023).

2. K. S. Qwah, E. Farzana, A. Wissel, M. Monavarian, T. Mates, and J. S. Speck, “Indium as a surfactant: Effects on growth morphology and background impurity in GaN films grown by ammonia-assisted molecular beam epitaxy,” APL Materials 10, 081107 (2022).

1. J. Wang, K. F. Jorgensen, E. Farzana, K. S. Qwah, M. Monavarian, Z. J. Biegler, T. Mates, and J. S. Speck, “Impact of growth parameters on the background doping of GaN films grown by ammonia and plasma-assisted molecular beam epitaxy for high-voltage vertical power switches,” APL Materials 9, 081118 (2021).

Journals: Area-Ultrawide-bandgap Defects

8. E. Farzana, A. Mauze, J. B. Varley, J. S. Speck, A. R. Arehart, and S. A. Ringel, “Influence of Neutron Irradiation on Deep Levels in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy,” APL Materials 7, 121102 (2019).

7. E. Farzana, M. Chaiken, T. Blue, A. R. Arehart, and S. A. Ringel, “Impact of deep level defects induced by high energy neutron radiation in β-Ga2O3,” APL Materials 7 (2), 022502 (2019).

6. E. Farzana, E. Ahmadi, J. S. Speck, A. R. Arehart, and S. A. Ringel, “Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy,” J. Appl. Phys. 123(16), 161410 (2018). (Most cited article in 2019 in Journal of Applied Physics) https://aip-info.org/1XPS-6GW1Q-15KIZX1W2E/cr.aspx

5. E. Farzana, H. M. Foronda, C. M. Jackson, T. Razzak, Z. Zhang, J. S. Speck, A. R. Arehart, and S. A. Ringel, “Characterization of traps in InAlN by optically and thermally stimulated deep level defect spectroscopies,” J. Appl. Phys. 124 (14), 145703 (2018).

4. H. Ghadi, J. F. McGlone , C. M. Jackson , E. Farzana, Z. Feng, A. F. M. A. U. Bhuiyan, H. Zhao , A. R. Arehart , and S. A. Ringel, “Full bandgap defect state characterization of β-Ga2O3 grown by metal organic chemical vapor deposition,” APL Materials 8, 021111 (2020).

3. J. M. Johnson, Z. Chen, J. B. Varley, C. M. Jackson, E. Farzana, Z. Zhang, A. R. Arehart, H. Huang, A. Genc, S. A. Ringel, C. G. Van de Walle, D. A. Muller, and J. Hwang, “Unusual Formation of Point Defect Complexes in the Ultrawide-Band Gap Semiconductor β-Ga2O3,” Phys. Rev. X 9, 041027 (2019).

2. Z. Zhang, E. Farzana, A. R. Arehart, and S. A. Ringel, “Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy,” Appl. Phys. Lett. 108, 052105 (2016).

1. Z. Zhang, E. Farzana, W. Sun, J. Chen, E. Zhang, D. Fleetwood, R. Schrimpf, B. McSkimming, E. Kyle, J. S. Speck, A. R. Arehart, and S. A. Ringel, “Thermal stability of deep level defects induced by high energy proton irradiation in n-type GaN,” J. Appl. Phys. 118, 155701 (2015).

Conferences

21. E. Farzana, N. S. Hendricks, S. Islam, A. S. Senarath, R. M. Cadena, D. R. Ball, A. Sengupta, R. A. Reed, E. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, and J. S. Speck, “Radiation-hard Low-loss β-Ga2O3 High-Power Diodes,” GOMACTech, Charleston, SC (2024).

20. E. Farzana, S. Roy, N. S. Hendricks, S. Krishnamoorthy, and J. S. Speck, “Vertical β-Ga2O3 Diodes with PtOx/interlayer Pt Schottky Contact and High Permittivity Dielectric Field Plate for Low Loss and High Breakdown Voltage,” 6th U.S. Workshop on Gallium Oxide (GOX 2023), Buffalo, NY (2023).

19. E. Farzana, S. Roy, N. S. Hendricks, S. Krishnamoorthy, and J. S. Speck, “Vertical β-Ga2O3 Diodes with High Barrier PtOx Contacts and High-κ Field Plate on Low-Doped Epitaxy for High Breakdown Voltage,” 65th Electronic Materials Conference, Santa Barbara, CA (2023).

18. E. Farzana, K. Shek Qwah, Z. Biegler, A. Wissel-Garcia, I. Celupica-Liu, T. Itoh, J.S. Speck, “High-power Vertical GaN Diodes using Ammonia Molecular Beam Epitaxy,” 14th International Conference on Nitride Semiconductors (ICNS-14), Fukuoka, Japan, Nov (2023).

17. E. Farzana, N. S. Hendricks, A. Bhattacharyya, R. M. Cadena, D. R. Ball, S. Islam, A. S. Senarath, E. Zhang, D. M. Fleetwood, R. D. Schrimpf, and J. S. Speck, “Radiation Effects on Vertical β-Ga2O3 Power Diodes,” GOMACTech, San Diego (2023).

16. E. Farzana, A. Bhattacharyya, N. S. Hendricks, T. Itoh, S. Krishnamoorthy, and J. S. Speck, “Metal Oxide (PtOX) Schottky Contact with High-κ Dielectric Field Plate for Improved Field Management in Vertical β-Ga2O3 Devices,” The 5th Gallium Oxide Workshop (GOX 2022), Washington, D.C. (2022).

15. E. Farzana (Invited), F. Alema, T. Itoh, N. Hendricks, A. Mauze, A. Osinsky, and J. S. Speck, “β-Ga2O3 epitaxy and power devices from metal-organic chemical vapor deposition,” Oxide-based Materials and Devices XII, SPIE Photonics West, CA, (2022).

14. E. Farzana, J. Wang, K. F. Jorgensen, K. S. Qwah, M. Monavarian, T. Itoh, Z. J. Biegler, and J. S. Speck, “Vertical GaN Devices for High-Power Electronics,” 240th ECS Meeting, Orlando, FL (2021).

13. E. Farzana, F. Alema, W. Y. Ho, A. Mauze, T. Itoh, A. Osinsky, and J. S. Speck, “Vertical β-Ga2O3 Schottky diodes from metal-organic chemical vapor deposition with low on-resistance and high average breakdown field,” Oxide-based Materials and Devices XII, 11687, 116870G, SPIE Photonics West, CA (2021).

12. E. Farzana, A. Mauze, J. S. Speck, A. Arehart, and S. A. Ringel, “Impact of Neutron Irradiation on Deep Levels in Ge-doped (010) β-Ga2O3 Layers Grown by Plasma-assisted Molecular Beam Epitaxy,” MRS Fall Meeting, Boston, MA (2018).

11. E. Farzana, T. Blue, A. R. Arehart, and S. A. Ringel, “Investigation of Neutron Irradiation on Deep Levels in β-Ga2O3,” Lester Eastman Conference, Columbus, OH (2018).

10. E. Farzana, Z. Zhang, S. Kaun, J. S. Speck, A. R. Arehart, and S. A. Ringel, “Characterization of Deep Level Defects in β-Ga2O3,” 58th Electronic Materials Conference, Delaware, NE (2016).

9. E. Farzana, Z. Zhang, E. C. H. Kyle, E. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, J. S. Speck, A. R. Arehart, and S. A. Ringel, “Comparison of electron and proton irradiation-induced traps in n-type GaN,” 57th Electronic Materials Conference, Columbus, OH (2015).

8. Z. Biegler, E. Farzana, W. Y. Ho, S. Krishnamoorthy, and J. S. Speck, “GaN Lateral Schottky Superjunction Diodes,” 14th International Conference on Nitride Semiconductors (ICNS-14), Fukuoka, Japan, Nov (2023).

7. J. S. Speck, E. Farzana, K. S. Qwah, Z. J. Biegler, A. Wissel-Garcia, I. Celupica-Liu, and T. Itoh, “Gallium Nitride for Vertical Power Devices: Improving Morphology and Unintentional Impurities for Better Devices,” 244th ECS Meeting, Gothenburg, Sweden, October (2023).

6. N. A. Allen, Q. Shao, Z. J. Biegler, E. Farzana, S. Krishnamoorthy, J. S. Speck, L. F. Voss, “Gallium Nitride Lateral Charge-Balanced Layers for Superjunction Devices,” 244th ECS Meeting, Gothenburg, Sweden, October (2023).

5. S. Islam, A. Senarath, A. Sengupta, En Xia Zhang, D. Ball, D. Fleetwood, R. Schrimpf, E. Farzana, A. Bhattacharyya, N. Hendricks, and J. S. Speck, "Single-Event Burnout by Cf-252 Irradiation in Vertical β-Ga2O3 Diodes with Pt and PtOx Schottky Contacts and High Permittivity Dielectric Field Plate," 2023 Device Research Conference, Santa Barbara, CA, USA, (2023), pp. 1-2.

4. N. Hendricks, A. Green, A. Islam, K. Leedy, K. liddy, J. Williams, E. Farzana, J. Speck, K. Chabak,, “Field Plated β-Ga2O3 MIS Diodes with High-κ TiO2 Interlayer for Increased Breakdown and Reduced Leakage Current,” The 5th Gallium Oxide Workshop (GOX 2022), Washington, D.C. (2022).

3. R. Cadena, D. R. Ball, R. D. Schrimpf, D. M. Fleetwood, R. A. Reed, M. L. Alles, M. W. McCurdy, S. T. Pantelides, K. F. Galloway, A. F. Witulski, E. Farzana, and J. Speck, “Low-Energy Ion-Induced Single-Event Burnout in Gallium Oxide Schottky Diodes,” IEEE Nuclear & Space Radiation Effects Conference (NSREC), Salt Lake City, UT (2022).

2. W. Sun, Z. Zhang, T. Mohsin, E. Farzana, B. McSkimming, C. Lee, P. Saunier, J. Speck, S. A. Ringel, and A. R. Arehart, “General model for irradiation-induced degradation of GaN HEMTs,” ROCS, Indian Wells, CA (2017).

1. Z. Zhang, E. Farzana, E. Kyle, N. Young, S. Keller, U. Mishra, J. Speck, A. Arehart and S. Ringel, “Deep Level States in p-type GaN Grown by Ammonia-based Molecular Beam Epitaxy and Metal Organic Chemical Vapor Deposition,” Best paper award, 57th Electronic Materials Conference, Columbus, OH (2015).