News

June 2024: Esmat received an Invited Talk at the 2025 MRS Spring Meeting in the symposium "Radiation Effects in Semiconductors for Extreme Environments". 

June 2024: Our coauthored paper with Vanderbilt University on Single-event burnout of β-Ga2O3 Schottky diodes with respect to drift layer thickness effects was accepted for Oral presentation in RADECS 2024. 

May 2024: Esmat presented an Invited talk in IWGO 2024 at Berlin, Germany, which is the most prestigious international conference on Ga2O3. She presented her recent works on Vertical β-Ga2O3 devices for high-power and extreme radiation applications. https://grafox2022.pdi-berlin.de/iwgo-2024/program/

May 2024: Esmat has received the 2024 ORAU Ralph E. Powe Junior Faculty Enhancement Award for her proposed research on β-Ga2O3 power devices for extreme environment application. She is among the 37 awardees selected from 174 applications of 91 institutions. https://www.orau.org/partnerships/grant-programs/powe/index.html

March 2024: Esmat presented a talk on her research titled "Radiation-hard Low-loss β-Ga2O3 High-Power Diodes" in the Session "Radiation Hardened Characterization Mechanism " in GOMACTech 2024 Conference at South Carolina. 

February 2024: Our coauthored paper with Vanderbilt University on Single-event burnout of PtOx/Ga2O3 Schottky diodes with high-permittivity field-plate published in IEEE Transactions on Nuclear Science. 

November 2023: Paper selected as Editor's pick in Applied Physics Letters, titled  "Vertical PtOx/Pt/β-Ga2O3 Schottky diodes with high permittivity dielectric field plate for low leakage and high breakdown voltage". https://doi.org/10.1063/5.0171876.