News

December 2025: Ahsanul defends his MS (Thesis). Congratulations Ahsanul!

November 2025: Our group's paper is published in APL Electronic Devices. Congratulations to the team: Ahsanul (lead author) and Emerson (co-author).

September 2025: Esmat receives her first DoD grant from AFOSR as the Lead PI. This is a collaborative project with Vanderbilt University that focuses on investigating radiation effects in (Ultra)-wide bandgap power devices. 

July 2025: Emerson's abstract is accepted for Oral presentation in GOX 2025 from Late News. He will be presenting his work on electrothermal co-design of vertical Ga2O3 devices. Congratulations Emerson!

June 2025: Our coauthored paper with Vanderbilt University on Single-event burnout of Ga2O3 Schottky diodes with scaling device thickness published in IEEE Transactions on Nuclear Science. 

April 2025:  Book Chapter contributed by Esmat on Vertical GaN power diode appears online by Springer. https://link.springer.com/chapter/10.1007/978-3-031-83056-3_9

December 2024:  Compound Semiconductor News features Esmat's research on Vertical GaN power devices https://compoundsemiconductor.net/article/120717/Advancing_GaN_power_devices_with_ammonia_MBE

November 2024: Esmat received an Invited Talk at the 2025 Microelectronics Reliability and Qualification Workshop (MRQW). She will be presenting her recent works on UWBG devices for aerospace and high-power electronics.

August 2024: Ahsanul's abstract is accepted for Oral presentation in 2024 MRS Fall Meeting. He will be presenting his research on high-power Ga2O3 devices in the symposium "Advanced Functional Materials for Extreme Conditions ". Congratulations Ahsanul!

August 2024: Esmat receives her first NSF grant on Gallium Oxide Device development from NSF Electronics, Photonics and Magnetic Devices. It will be a collaborative device-packaging research with UT Dallas where Esmat's group will conduct device fabrication and Prof. Mona Ghassemi's group at UT Dallas will investigate the packaging. https://www.nsf.gov/awardsearch/showAward?AWD_ID=2401579

June 2024: Esmat received an Invited Talk at the 2025 MRS Spring Meeting in the symposium "Radiation Effects in Semiconductors for Extreme Environments". 

June 2024: Our coauthored paper with Vanderbilt University on Single-event burnout of β-Ga2O3 Schottky diodes with respect to drift layer thickness effects was accepted for Oral presentation in RADECS 2024. 

May 2024: Esmat presented an Invited talk in IWGO 2024 at Berlin, Germany, which is the most prestigious international conference on Ga2O3. She presented her recent works on Vertical β-Ga2O3 devices for high-power and extreme radiation applications. https://grafox2022.pdi-berlin.de/iwgo-2024/program/

May 2024: Esmat has received the 2024 ORAU Ralph E. Powe Junior Faculty Enhancement Award for her proposed research on β-Ga2O3 power devices for extreme environment application. She is among the 37 awardees selected from 174 applications of 91 institutions. https://www.orau.org/partnerships/grant-programs/powe/index.html

March 2024: Esmat presented a talk on her research titled "Radiation-hard Low-loss β-Ga2O3 High-Power Diodes" in the Session "Radiation Hardened Characterization Mechanism " in GOMACTech 2024 Conference at South Carolina. 

February 2024: Our coauthored paper with Vanderbilt University on Single-event burnout of PtOx/Ga2O3 Schottky diodes with high-permittivity field-plate published in IEEE Transactions on Nuclear Science. 

November 2023: Paper selected as Editor's pick in Applied Physics Letters, titled  "Vertical PtOx/Pt/β-Ga2O3 Schottky diodes with high permittivity dielectric field plate for low leakage and high breakdown voltage". https://doi.org/10.1063/5.0171876.