Dongwhee Kim received a B.S. degree in Semiconductor Systems Engineering followed by an M.S. degree in Semiconductor and Display Engineering from Sungkyunkwan University, Suwon, South Korea, in 2022 and 2024, respectively. In 2024, he joined the Memory Division at Samsung Electronics, Hwaseong, South Korea, where he has been involved in HBM I/O circuit design. Since 2025, he has been pursuing a Ph.D. degree at the University of Texas at Austin. His research interests include reliable quantum computing and memory systems within computer architecture.
The University of Texas at Austin (UT Austin) - Present
Ph.D., Electrical and Computer Engineering
Advisor: Prof. Poulami Das
Sungkyunkwan University (SKKU)
M.S., Semiconductor and Display Engineering, Feb. 2024
Thesis: “Unity ECC: Unified Memory Protection Against Bit and Chip Errors” (Advisor: Prof. Jungrae Kim)
B.S., Semiconductor Systems Engineering, Feb. 2022
Computer Architecture
Quantum Computing
Memory Systems
Reliability
Awards
Seoul Police Commendation (No.4453), Commissioner of Seoul Metropolitan Police Agency, Oct. 2017
Invited Position
Samsung AI Forum (SAIF), Presented a poster on outstanding research in Computer Engineering, Nov. 2023
Scholarships
UT Austin Engineering Fellowship, Aug. 2025 – 2029
Samsung Electronics Industry-Academia Scholarship (full tuition & stipend), Mar. 2020 – Feb. 2024
Merit-based Semiconductor Education Scholarship, Aug. 2019
Samsung Semiconductor Scholarship (full tuition, 8 semesters), Mar. 2016 – Feb. 2022
Sungkyunkwan University
Research Assistant, Scalable Architecture Lab (SAL), Sep. 2020 — Dec. 2023
Samsung Electronics Memory Division
HBM I/O Circuit Design Engineer, Mar. 2024 — May 2025