One of the most critical considerations in designing power conversion devices such as SMPS (Switched Mode Power Supplies) is effectively suppressing surge voltages experienced by switching devices. These surge voltages arise from parasitic inductances in wiring or transformers combined with high di/dt during fast switching transitions. If not properly managed, the resulting voltage spikes can drive switching devices outside their Safe Operating Area (SOA), risking potential damage.

High-speed switching also generates electromagnetic interference (EMI) and surge voltages, both of which can be mitigated using snubber circuits. Such circuits typically consist of passive components like RC or RCD that absorb transient energy and damp the voltage spikes. Notably, minimizing the physical distance between the switching device and the snubber capacitor is crucial to reducing parasitic inductance and effectively controlling surge voltages.

As power conversion systems continue to increase in power density, there is ongoing research focused on integrating snubber circuits directly into the PCB substrate. This approach shortens interconnect lengths and improves overall surge and EMI suppression capabilities.

In the realm of high-performance computing, high-bandwidth memory (HBM) has emerged as a key technology, driving the need for high-speed interfaces that can accommodate a large number of I/O channels between GPUs and memory. Traditional PCB substrates alone often struggle to meet both extremely fine pitch and high data transmission speeds simultaneously. Consequently, 2.5D packaging based on silicon (Si) interposers has gained prominence.

Silicon interposers can integrate Through-Silicon Vias (TSVs), Redistribution Layers (RDLs), and Power Delivery Network (PDN) structures. By leveraging relatively mature semiconductor Back-End of Line (BEOL) processes, they enable fine pitch interconnects and maintain robust signal integrity. Furthermore, emerging technologies such as Embedded Multi-die Interconnect Bridge (EMIB), which embeds RDLs within the package substrate, are also being developed to efficiently handle large I/O counts.

Critical considerations in these advanced packaging designs include optimizing PDN to deliver stable power, minimizing insertion loss in high-speed signal pathways, and controlling near-end and far-end crosstalk (NEXT, FEXT) while ensuring proper impedance matching. By carefully addressing these factors, systems can effectively leverage high-bandwidth memory like HBM to achieve reliable high-speed communication with GPUs and other processors.

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