Publications
PUBLICATIONS MATRIX - PEER REVIEWED JOURNAL PAPERS:
(More details: http://orcid.org/0000-0002-5625-5948)
Total SCI/SCOPUS indexed Articles: 27 + 10 (conference papers)
Total First Author SCI/SCOPUS Indexed Articles: 16
TOTAL CITATION: 1000+ h-INDEX: 17 i10-INDEX: 20
Google Scholar: https://scholar.google.com/citations?user=nGDnjbQAAAAJ&hl=en (h-index: 17)
Scopus ID: http://www.scopus.com/authid/detail.uri?authorId=56494131400 (h-index: 17)
Web of Science: https://www.webofscience.com/wos/author/record/699292 (ResearcherID: C-7203-2009)
PUBLICATIONS LIST- PEER REVIEWED JOURNAL PAPERS
Journal Papers (First & Corresponding author)
1. ReS2/h-BN/Graphene Heterostructure Based Multifunctional Devices: Tunnelling Diodes, FETs, Logic Gates & Memory
http://dx.doi.org/10.1002/aelm.202000925, Advanced Electronic Materials (I.F. 6.6), 7(1), 2000925, 2021, Bablu Mukherjee*, R. Hayakawa, K. Watanabe, T. Taniguchi, S. Nakaharai, Y. Wakayama. 18 November 2020, ISSN 2199-160X
2. Laser Assist Multi-Level Nonvolatile Memory Few layer-ReS2/h-BN/Floating-gate Graphene Heterostructures
http://dx.doi.org/10.1002/adfm.202001688, Advanced Functional Materials (I.F. 16.8), 30 (42) 2001688, 2020, Bablu Mukherjee*, A. Zulkefli, K. Watanabe, T. Taniguchi, Y. Wakayama, S. Nakaharai. (Citation: 02), 25 August 2020, ISSN 1616-3028 (Highlighted: (News coverage: Nano Werk, Tech Xplore blogs & Nanotechjapan)& NIMS - Press Release: https://www.nims.go.jp/news/press/2020/08/202008250.html)
EE Times Japan Coverage: Link
3. Enhanced Quantum Efficiency in Vertical Mixed-thickness n-ReS2/p-Si Heterojunction Photodiodes
http://dx.doi.org/10.1021/acsphotonics.9b00580, ACS Photonics (I.F. 6.88), 6 (9), 2277 - 2286, 2019, Bablu Mukherjee*, A. Zulkefli, R. Hayakawa, Y. Wakayama, S. Nakaharai, (Citation: 04), 21 August 2019, ISSN 2330-4022.
4. Exciton Emission Intensity Modulation of Monolayer MoS2 via Au Plasmon Coupling
http://dx.doi.org/10.1038/srep41175, Nature - Scientific Reports (I.F. 5.2), 7, 41175, 2017,
Bablu Mukherjee*, N. Kaushik, Ravi P. N. Tripathi, A. M. Joseph, P. K. Mohapatra, S. Dhar, B. P. Singh, G. V. Pavan Kumar, E. Simsek, S. Lodha (Citation: 38), 30 January 2017, ISSN 2045-2322
Journal Papers (First author)
1. NIR Schottky Photodetectors Based on Individual Single-Crystalline GeSe Nanosheet
http://dx.doi.org/10.1021/am402550s, ACS Applied Materials & Interfaces (I.F. 8.75), 5 (19), 2013, 9594-9604, Bablu Mukherjee, Y. Cai, H. R. Tan, Y. P. Feng, E. S. Tok, and C. H. Sow, (Citation: 143) September 12, 2013, ISSN: 1944-8252
2. Stepped-surfaced GeSe2 nanobelts with high-gain photoconductivity
http://dx.doi.org/10.1039/C2JM35006H, Journal of Material Chemistry (I.F. 7.4), 22, 2012, 24882–24888
Bablu Mukherjee, Z. Hu, M. Zheng, Y. Cai, Y. P. Feng, E. S. Tok and C. H. Sow, (Citation: 20) 25 Sep 2012, ISSN 0959-9428
3. Direct Laser Micropatterning of GeSe2 Nanostructures with Controlled Optoelectrical Properties
http://dx.doi.org/10.1039/C3RA46790B, RSC Advances (I.F. 3.8), 4, 2014, 10013-10021
Bablu Mukherjee, G. Murali, X. Lim, M. Zheng, E. S. Tok, and C. H. Sow, (Citation: 06) 28 Jan 2014, ISSN 2046-2069
4. Photocurrent Characteristics of Individual GeSe2 Nanobelt with Schottky Effects
http://dx.doi.org/+10.1063/1.4823779, Journal of Applied Physics (I.F. 2.2), 114 (13), 2013, 134302-134310, Bablu Mukherjee, E. S. Tok and C. H. Sow, (Citation: 14) 01 October 2013, ISSN: 0021-8979
5. Synthesis, characterization & electrical properties of hybrid Zn2GeO4–ZnO nanowire arrays
http://dx.doi.org/10.1016/j.jcrysgro.2012.02.008, Journal of Crystal Growth (I.F. 1.7), 346(1), 2012, 32–39, Bablu Mukherjee, B. Varghese, M. Zheng, K Karthik, N. Mathews, S. G. Mhaisalkar, E. S. Tok, C. H. Sow, (Citation: 10), May 2012, ISSN: 0022-0248
6. Photoconductivity in VO2-ZnO Inter-nanowire Junction and Nanonetwork Device
http://dx.doi.org/10.1166/nnl.2016.2066, Nanoscience and Nanotechnology Letters (NNL), (I.F. 1.4), 8, 2016, 492-497, Bablu Mukherjee, B. Varghese, M. Zheng, E. S. Tok, E. Simsek, C. H. Sow, (Citation: 02) June 2016, ISSN 1941-4900
7. Absorptance of PbS Quantum Dots Thin Film Deposited On Trilayer MoS2
http://dx.doi.org/10.5185/amlett.2015.6094, Advanced Materials Letters (I.F. 1.9), 6(11), 936-940, 2015, Bablu Mukherjee, A. Guchhait, Y. T. Chan, E. Simsek, (Citation: 05), 30 August 2015, ISSN 0976-3961
8. Raman analysis of gold on WSe2 single crystal film
http://dx.doi.org/10.1088/2053-1591/2/6/065009, Materials Research Express (I.F. 1.15), 2 (6), 2015, 065009, Bablu Mukherjee, W. S. Leong, Y. Li, H. Gong, L. Sun, Z. X. Shen, E. Simsek, J. T. L. Thong, (Citation: 15) 18 June 2015, ISSN: 2053-1591
9. Complex Electrical Permittivity of the Monolayer MoS2 in Near UV and Visible
http://dx.doi.org/10.1364/OME.5.000447, Optical Materials Express (I.F. 2.84), 5 (2), 2015, 447-455
Bablu Mukherjee, F. Tseng, D. Gunlycke, K. K. Amara, G. Eda, E. Simsek, (Citation: 97) 27 Jan 2015, ISSN: 2159-3930 -One of the most downloaded papers (TOP 10) in Optical Material Express, OSA, October 2016.
10. Utilization of monolayer MoS2 in Bragg Stacks and Metamaterial Structures as Broadband Absorbers
http://dx.doi.org/10.1016/j.optcom.2016.02.038, Optics Communications (Elsevier) (I.F. 1.88), 369, 2016, 89-93, Bablu Mukherjee and Ergun Simsek, (Citation: 18) 15 June 2016, ISSN: 0030-4018
11. Plasmonics Enhanced Average Broadband Absorption of Monolayer MoS2
http://dx.doi.org/10.1007/s11468-015-0053-9, Plasmonics (Springer) (I.F. 2.36), 11, 2015, 1-5
Bablu Mukherjee and Ergun Simsek, (Citation: 23) 14 August 2015, ISSN: 1557-1963
12. Reaction Mechanism & Selectivity Control of Si-Compound ALE Based on Plasma Modification and F-radical Exposure
Langmuir (ACS) (I.F. 3.88), xx, 2021
René Vervuurt,* Bablu Mukherjee,* Kazuya Nakane, Takayoshi Tsutsumi, Masaru Hori, Nobuyoshi Kobayashi , *equal first author, 7 October 2021, ISSN: 0743-7463
Journal Papers (Contributing-author)
1. Enhanced Selectivity in Volatile Organic Compound Gas Sensors Based on ReS2-FETs under Light-Assisted and Gate-Bias Tunable Operation
https://doi.org/10.1021/acsami.1c10054, ACS Applied Mat. & Interfaces (I.F. 9.23), 2021, A. Zulkefli, Bablu Mukherjee, R. Sahara, R. Hayakawa, T. Iwasaki, S. Nakaharai, Y. Wakayama, August 31, 2021, ISSN: 1944-8252
2. Gate-Bias Assisted Humidity Sensor based on ReS2 Field-Effect Transistors
https://doi.org/10.35848/1347-4065/abd2a0, Japanese Journal of Applied Physics (I.F. 1.37), 60, SBBH01, 2020, A. Zulkefli, Bablu Mukherjee, T. Iwasaki, R. Hayakawa, Y. Wakayama and S. Nakaharai ISSN: 1347-4065
3. Light-Assisted and Gate-Tunable Oxygen Gas Sensor based on ReS2 Field-Effect Transistors
https://doi.org/10.1002/pssr.202000330, Physica Status Solidi (RRL) - Rapid Research Letters (I.F. 2.29), 4(11), 2000330, 2020, A. Zulkefli, Bablu Mukherjee, T. Iwasaki, R. Hayakawa, Y. Wakayama, S. Nakaharai
4. Reversible hysteresis inversion in MoS2 field effect transistors
http://dx.doi.org/10.1038/s41699-017-0038-y, Nature - npj 2D Materials and Applications (I.F. 9.3) 1, 34, 2017, N. Kaushik, D. Mackenzie, K. Thakkar, N. Goyal, Bablu Mukherjee, P. Boggild, D. H. Petersen, S. Lodha, (Citation: 27), 18 October 2017, ISSN 2397-7132
5. Multilayer ReS2 Photodetector with Gate Tunability for High Responsivity and High Speed Applications, http://dx.doi.org/ 10.1021/acsami.8b11248, ACS Applied Mat. & Interfaces (I.F. 8.75) 10, 36512, 2018, Kartikey Thakkar, Bablu Mukherjee, Sameer Grover, Naveen Kaushik, Mandar Deshmukh, and S. Lodha (Citation: 12), September 25, 2018, ISSN: 1944-8252
6. Cation Exchange Synthesis of Uniform PbSe/PbS Core/Shell Tetra-pods and their use as Near-Infrared Photodetectors, http://dx.doi.org/10.1039/C6NR02579J, Nanoscale (I.F. 7.39), 8, 14203-14212, 2016
N. Mishra, Bablu Mukherjee, G. Xing, S. Chakrabortty, A. Guchhait, J. Y. Lim, (Citation: 15), 22 Jun 2016, ISSN: 2040-3364
7. Visibility of Atomically Thin Layered Materials Buried in Silicon Dioxide
http://dx.doi.org/10.1088/0957-4484/26/45/455701, Nanotechnology (IOP) (I.F. 3.8), 26, 2015, 455701-08, Ergun Simsek and Bablu Mukherjee, (Citation: 06) 16 October 2015, ISSN: 0957-4484
8. K-enriched WO3 Nanobundles: High Electric Conductivity and Significant Photocurrent with Controlled Polarity
http://dx.doi.org/10.1021/am303253p, ACS Applied Materials & Interfaces (I.F. 8.75), 5(11), 2013, 4731
Z. Hu, Z. Ji, W. W. Lim, Bablu Mukherjee, C. Zhou, E. S. Tok and C. H. Sow, (Citation: 17) April 22, 2013, ISSN: 1944-8252
9. Electrical and photoresponse properties of Co3O4 nanowires
http://dx.doi.org/+10.1063/1.4712497, Journal of Applied Physics (I.F. 2.2), 111(10), 2012, 104306-104312, B. Varghese, Bablu Mukherjee, K. R. G. Karthik, K. B. Jinesh, S. G. Mhaisalkar, E. S. Tok, and C. H. Sow, (Citation: 42) 21 May 2012, ISSN: 0021-8979
10. Area-selective plasma-enhanced atomic layer etching (PE-ALE) of silicon dioxide using a silane coupling agent
https://doi.org/10.1116/6.0002044, Journal of Vacuum Science & Technology (I.F. 3.2), 40(6), 2022, 062601, Airah P Osonio, Takayoshi Tsutsumi, Yoshinari Oda, Bablu Mukherjee, Ranjit Borude, Nobuyoshi Kobayashi, Masaru Hori, (Citation: 00) 31 October 2022, ISSN: 1520-8559
11. Topographically-selective atomic layer etching of SiO2 using radical fluorination of the surface followed by Ar ion bombardment
https://doi.org, Jpn. J. Appl. Phys. (I.F. 1.5), XX, 2023, Airah P Osonio, Takayoshi Tsutsumi, Bablu Mukherjee, Ranjit Borude, Nobuyoshi Kobayashi, Masaru Hori, (Citation: 00)
PUBLICATIONS LIST- CONFERENCE PROCEEDINGS PAPERS
1. Physics and Modeling of Two-dimensional (2D) RF Transistors and Photodetectors,
IEEE – 3rd EDTM Conference, Singapore, Mar. 12-15, 2019, 18738917, INVITED Paper
S. Lodha, K. Thakar, S. Singh, Bablu Mukherjee, N. Kaushik, S. Grover, B. Muralidharan, M. Deshmukh
https://ieeexplore.ieee.org/document/8731169
2. Plasmonic Enhancement in Anisotropic Thin Films of Rhenium Disulphide (ReS2),
31st Annual Conference of IEEE Photonics Society (IPC), 18262906, Reston, VA, USA, Sep.30-Oct.4, 2018
Bablu Mukherjee, S. Roy, E. Simsek, S. Ghosh, V. G. Achanta, S. Lodha
https://doi.org/10.1109/IPCon.2018.8527296
3. Suspended ReS2 FET for Improved Photocurrent-time Response,
75th Device Research Conference (DRC), 17082434, Notre Dame, Indiana, USA, June 25-28, 2017,
Bablu Mukherjee, Kartikey Thakar, Naveen Kaushik, Saurabh Lodha. ISBN: 978-1-5090-6328-4
https://doi.org/10.1109/DRC.2017.7999439
4. Light-Matter Interactions in Complex Media with 2D Materials, Metamaterials, Quantum Dots,
IEEE AP-S/URSI Conference, 16412123, Fajardo, Puerto Rico, USA, June 26 - July 1, 2016, ISSN 1947-1491
Bablu Mukherjee, Ergun Simsek. IEEE Xplore https://doi.org/10.1109/APS.2016.7696197
5. Photoconductivity of Interconnected Nanowires and Their Electromagnetic-Circuit Co-Simulation, ISBN 978-1-5090-2852-8 https://doi.org/10.1109/USNC-URSI.2016.7588513
IEEE AP-S/URSI 2016 Conference, Fajardo, 16378267, Puerto Rico, USA, June 26 - July 1, 2016
Bablu Mukherjee, Ergun Simsek, Binni Varghese, Minrui Zheng, Eng Soon Tok, and Chorng Haur Sow
6. Enhanced absorption with quantum dots, metal nanoparticles, and 2D materials,
SPIE Photonics West Conference, SPIE OPTO, 97580G, San Francisco, CA, USA, 16th February, 2016
Ergun Simsek, Bablu Mukherjee, Asim Guchhait, Yin Thai Chan https://doi.org/10.1117/12.2213054
7. Keeping 2D materials visible even buried in SOI wafers, https://doi.org/10.1117/12.2213085
SPIE Photonics West Conference, 97520R, CA, USA, 16th February, 2016, E. Simsek, B Mukherjee
8. Plasmonics Enhanced Average Broadband Absorption of Monolayer MoS2,
28th Annual IEEE Photonics Conference, IPC, 15600756, Reston, VA, USA, 7th October, 2015, B. Mukherjee, E. Simsek, ISSN 1092-8081, IEEE Xplore. https://doi.org/10.1109/IPCon.2015.7323495
9. Enhancing Scattering and Absorption in Two-Dimensional Layered Material Systems with Surface Plasmons and Periodicity, ISBN 978-0-9960-0781-8, 22th March 2015,
ACES (The Applied Computational Electromagnetics Society), 15143527, Williamsburg, VA, US, 2015
Bablu Mukherjee, Ergun Simsek, IEEE Xplore https://ieeexplore.ieee.org/document/7109617/
10. Topographically-selective Atomic Layer Etching of SiO2 using fluorine-containing plasma,
3-7 October 2022, 75th Annual Gaseous Electronics Conference, Sendai International Center, Sendai, Japan
Airah Osonio, Takayoshi Tsutsumi, Bablu Mukherjee, Ranjit Borude, Nobuyoshi Kobayashi, Masaru Hori, Bulletin of the American Physical Society https://meetings.aps.org/Meeting/GEC22/Session/FW5.3
11. Atomic Layer Etching of Ti-Compounds: Mechanism and Etch Selectivity Control for Advanced Device Fabrication,
Sep 29, 2022, International Conference on Solid State Devices, SSDM, The Japan Society of Applied Physics.
Bablu Mukherjee, René Vervuurt, Airah Peraro Osonio, Takayoshi Tsutsumi, Masaru Hori, Nobuyoshi Kobayashi, https://doi.org/10.7567/SSDM.2022.G-10-06
PUBLICATIONS LIST- FILLED PATENTS
1. Etching Processes and Processing Assemblies,
US Patent Number 63/339,561, Filled Date: 2022/05/09,
Bablu Mukherjee, René Henricus Jozef Vervuurt, Takayoshi Tsutsumi, Nobuyoshi Kobayashi, Hori Masaru, https://patents.google.com/patent/US20230386792A1/en
2. Methods and Assemblies for Depositing Material in a Gap,
US Patent Number 63/523,935, Filled Date: 2023/06/29,
Ranjit Borude, Bablu Mukherjee, René Henricus Jozef Vervuurt, Viljami Pore, Takayoshi Tsutsumi, Nobuyoshi Kobayashi, Masaru Hori
3. Methods for filling a gap and related systems and devices
US Patent Number 17/530,983 , Filled Date: 2022/05/26,
Zecheng Liu, KIM Sunja, Viljami Pore, Jia Li Yao, Ranjit Borude, Bablu Mukherjee, René Henricus Jozef Vervuurt, Takayoshi Tsutsumi, Nobuyoshi Kobayashi, Masaru Hori, https://patents.google.com/patent/US20220165569A1/en