​JSPS Research Fellow, Quantum Device Engineering Group, NIMS.

Interest in solid-state devices R&D for detectors, sensors, memory, and multifunctional device

Experienced researcher with a demonstrated history of working in top research institute. Electrical and material science engineer with a skill set in fabrication, nanoarchitectonics, process and application improvement, data analysis, and nanomaterial science engineering. Interested in solid-state devices R&D for detectors, optical sensors, memory, and multifunctional device development.


​JSPS Research Fellow, Quantum Device Engineering Group,

International Center for Materials Nanoarchitectonics (MANA),

National Institute for Materials Science (NIMS),

1-1 Namiki Tsukuba, Ibaraki 305-0044, JAPAN,

Email: MUKHERJEE.Bablu@nims.go.jp & bablu.iitm@gmail.com


Assistant Professor

Department of Physics,

School of Advanced Sciences (SAS), VIT University,

Vellore - 632014, Tamil Nadu, India.


  • An experimentalist, 8+ years (including Ph.D.) experience in Nanomaterials & two-dimensional (2D) Nanocrystals (fabrication and characterizations) and new application developments.
  • A semiconductor physicist and device engineer with almost 6+ years of hands-on experience of clean-room nanodevice fabrication and characterization. Hands-on experience in laboratory instrumentation and measurement techniques (Opto-electronics, energy conversion, sensors). Extensive Experience in nanofabrication, device processing, and characterization techniques.
  • Excellent communication and writing skills, published manuscript in high impact international peer-reviewed journals, presented research work on many conferences, meetings. (APPENDIX)
  • Excellent leadership & management skills, raising independent project funding including project design, planning and execution, managed cutting-edge R&D projects.
  • Taught, trained and guided undergraduate, master degree & Ph.D. students to inspire them the importance of cutting edge research.


Experimental Solid State Physics; Nanoscience & Nanotechnology


Nanoscience & technology | Material Science | Physics | Optoelectronics | Energy Conversion | Sensor


R & D | Scientific & Technical Consultancy | Project Management | Application Development


Year of Birth: 1987

Nationality: Indian

Gender & Marital Status: Male & Married

Languages Known: English, Hindi & Bengali


National Institute for Materials Science (NIMS), JAPAN :: JSPS Fellow :: Nov. 2017 – Present

  • Interlayer Transition and Infrared Photodetection in MoTe2/ReS2 p-n van der Heterostructures
  • CMOS Technology Compatible Vertical p-Si/n-ReS2 Efficient Near-Infrared Photodiode
  • Floating-Gate (FG) Non-Volatile Memory (NVM) Devices Based on 2D Heterostructures of Layered Chalcogenides Materials

Role description: Principal investigator of the projects. Designed & completed the projects independently and wrote the manuscript.

Indian Institute of Technology Bombay :: Institute Post-Doctoral Fellow :: Sep. 2015 – April 2017

    • Few Layer ReS2 Plasmonic Phototransistor with High-Performance Optoelectronics
    • Reversible hysteresis inversion in MoS2 field effect transistors
    • Control of Two-dimensional Excitonic Light Emission via Periodic Structures and Applied Field

Role description: Independent institute researcher. Wrote manuscript as corresponding author.

The George Washington University, USA :: Post-Doctoral Scientist :: Mar. 2014 – Aug. 2015

    • Plasmonic Gold Arrays on Monolayer MoS2 with Refractive Index Sensing
    • Optical Properties and Extraction of Complex Electrical Permittivity of Monolayer MoS2
    • Enhancing Optical Absorption and Scattering of Monolayer MoS2 with Plasmonic Au NPs.

National University of Singapore (NUS) :: Ph.D. Project :: Aug. 2009 - July 2013

    • Nanobelts with Different Surface Morphologies for High-gain Photoconductivity
    • Photocurrent Characteristics & Transport Mechanism of Individual Nanowire, Nanobelt devices.
    • Laser Micropatterning of Nanostructures with Controlled Optoelectrical Properties for Sensors
    • Photodetectors nanodevices Based on Individual Single-Crystalline GeSe Nanosheet