INTRODUCTION

The research interests include now SMPS and AC drivers for LED lighting systems.

LED DRIVERs

Alternating Current Light Emitting Diode Lighting Technology with Improved Light Flicker, Journal of Nanoelectronics and Optoelectronics, Vol. 10, No. 2, 234-238, 2015. 4
전원제어회로(10-1255190)
전원회로(10-1104205)

BATTERY MANAGEMENT SYSTEM(1)

Monitoring: the battery pack voltage, current, cell voltage, temperature, isolation, and interlocks
Protection; includes detecting the operating mode, setting fault criteria, authenticating, and identifying the system, predicting the pack/cell overvoltage and overcurrent, predicting the isolation fault, and detecting the high/low temperature
Charging and Discharging Management: BMS controls the charge current, turns on/off active switches between the pack and load/charger, runs the pre-charge sequence, sets dynamic power limits, and conducts active and passive balancing
Diagnosis: BMS estimates and predicts the depth of discharge (DOD), state of charge (SOC), battery capacity, cell temperature, state of fitness (SOF), available energy, charging time, remaining useful life (RUL), remaining runtime, and the inner impedance of cell and current capability to ensure efficient battery performance. BMS is also responsible for detecting faults, such as fires, thermal runaways, explosions, and minimizing the consequences of fault effects
Communication
Data Management

SONOS STRUCTURE

Single Power Supply Operated and Highly Reliable SONOS EEPROMs, J. Korean Phys. Soc. Vol. 40, No. 4, 642-644, 2002. 4
A scaled SONOS single-transistor memory cell for a high density NOR structure with common source lines, J. Korean Phys. Soc. Vol. 41, No. 6, 945-948, 2002. 12
Quantitative Analysis of Chemical Compositions in the Ultra-thin Oxide-Nitride-Oxide Stacked Films having Wet Oxidized Blocking Layer, Thin Solid Films, 515, 6915-6920, 2007. 7
A direct observation of the distributions of local trapped-charges and the interface-states near the drain region of the Silicon-Oxide-Nitride-Oxide-Silicon device for reliable four-bit/ cell Operations, Japanese Journal of Applied Physics, Vol. 49, No. 11R, 2010. 11
A Four-Bit-Per-Cell Program Method with Substrate-Bias Assisted Hot Electron Injection for Charge Trap Flash Memory Devices, J. Nanosci. Nanotechnol. 13, 3293-3297, 2013
Investigation of Endurance Degradation in a CTF NOR Array Using Charge Pumping Methods, Transactions on Electrical and Electronic Materials, Vol. 17, No. 1, 25-28, 2016
Nonvolatile Memory Device and Method of Manufacturing the Same(US7208365)
Nonvolatile Memory Device and Method of Manufacturing the Same(US7112842)
비휘발성 메모리 소자 및 그 제조 방법(10-0499151)

Re-Oxidized nitrous oxide

A New Charge-Trapping Nonvolatile Memory based on the Re-oxidized Nitrous Oxide, Microelectronic Engineering, Vol. 77, Issue 1, 21-26, 2005. 1

Re-Oxidized nitrided oxide

Feasibility of Re-Oxidized Nitrided Oxide (RONO) as a Charge-Trapping Medium for the Non-Volatile Memory, Solid-State Electronics, 51, 1009-1013, 2007. 6

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