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차세대시스템반도체 설계·소자·공정기술개발사업 "64 레벨(6bit) 초고용량 낸드 플래시 메모리 개발을 위한 소자 및 설계 핵심 요소기술 개발" 한국산업기술평가관리원 (KEIT), (2022.04~2024.12) [연구 책임자]
우수신진연구 사업 "플렉서블 IoT 시스템 용 소프트 기능성 나노 소재 기반 뉴로모픽 및 보안 집적 소자 원천기술 개발" 한국연구재단 (NRF), (2022.03~2025.02)
[연구 책임자]
1. Multi-bit (4bit, 5bit, 6bit) 3D NAND Flash memory device and process
1. Multi-bit (4bit, 5bit, 6bit) 3D NAND Flash memory device and process
We develop multi-level (4bit, 5bit, 6bit) technology of 3D NAND Flash memory device and process using new materials and novel process scheme.
We develop multi-level (4bit, 5bit, 6bit) technology of 3D NAND Flash memory device and process using new materials and novel process scheme.
Surf. Interfaces 32, 102179 (2022)
2. Stackable DRAM Cell device (3D, 4D, 4F2 stucture)
2. Stackable DRAM Cell device (3D, 4D, 4F2 stucture)
We develop stackable DRAM cell device using innovative material, structure, and novel process scheme to break the existing scaling limit of DRAM.
We develop stackable DRAM cell device using innovative material, structure, and novel process scheme to break the existing scaling limit of DRAM.
3. Novel device-based neuromorphic computing for AI
3. Novel device-based neuromorphic computing for AI
We develop novel device (memristor, charge trap memory) for neuromorphic computing using nanoscale phtolithography process and advanced electron microscopy methods. Our major research articles are as follows:
We develop novel device (memristor, charge trap memory) for neuromorphic computing using nanoscale phtolithography process and advanced electron microscopy methods. Our major research articles are as follows:
Adv. Intell. Syst. 4, 2200018 (2022)
Nanoscale 12, 14301-14930 (2020)
Nano Lett. 19, 839-849 (2019)
Adv. Funct. Mater. 28, 1804844 (2018)
4. Low-dimensional materials-based nonvolatile memory
4. Low-dimensional materials-based nonvolatile memory
We develop low-dimensional materials-based nonvolatile memory for next-generation flexible nonvolatile memory. Our major research articles are as follows:
We develop low-dimensional materials-based nonvolatile memory for next-generation flexible nonvolatile memory. Our major research articles are as follows:
Adv. Electron. Mater. 5, 1800688 (2019)
Adv. Funct. Mater. 27, 1703545 (2017)
5. Novel processing-in-memory circuit
5. Novel processing-in-memory circuit
We develop zero-static power nonvolatile processing-in-memory circuit to overcome von-Nuemann bottleneck. This research is related to the Processing-in-Memory (PIM) technology.
Our major research articles are as follows:
We develop zero-static power nonvolatile processing-in-memory circuit to overcome von-Nuemann bottleneck. This research is related to the Processing-in-Memory (PIM) technology.
Our major research articles are as follows:
Adv. Funct. Mater. 28, 1704725 (2018)
Nano Lett. 17, 6443-6452 (2017)
Nano Res. 10, 2459-2470 (2017)
6. MRAM (Magnetic Random Access Memory)
6. MRAM (Magnetic Random Access Memory)
We develop spintronic devices which make use of spin property of electrons. This spin property enables non-volatility and new logic functions. This new device present an important milestone to develop new type of computing systems that
This work will be in collaboration with KIST.
Co-worker information @ KIST
We develop spintronic devices which make use of spin property of electrons. This spin property enables non-volatility and new logic functions. This new device present an important milestone to develop new type of computing systems that
This work will be in collaboration with KIST.
Co-worker information @ KIST
Dr. Seung-heon Chris Baek
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