Conference

International Conferences

[1] [Invited talk] Byung Chul Jang, “MoS2-based Nonvolatile Memory for High-density 3D NAND Flash Memory Application”, International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE) 2022, Jeju, Korea, 2022.11.08

Before KNU~

[22] Jihun Park, Junhwan Choi, Byung Chul Jang, Sang Yoon Yang, Sung Gap Im, and Sung-Yool Choi, “Oxide-based memristive neural network for brain-inspired computing”, International Conference on Advanced Materials and Devices (ICAMD) 2017, Jeju, Korea, 2017.12.07

[21] Khang June Lee, Byung Chul Jang, Hamin Park, Woonggi Hong, and Sung-Yool Choi, “Plasmon tunneling through graphene spacer with different incident wavelength”, International Conference on Advanced Materials and Devices (ICAMD) 2017 Jeju, Korea, 2017.12.07

[20] Byung Chul Jang, Sang Yoon Yang, Junhwan Choi, Sung Gam Im, and Sung-Yool Choi, “Flexible functional memristive circuit for battery-powered flexible electronic system” , International Conference on Advanced Materials and Devices (ICAMD) 2017, Jeju, Korea, 2017.12.07

[19] Hagyoul Bae, Weon-Guk Kim, Hongkeun Park, Seung-Bae Jeon, Soo-Ho Jung, Hye Moon Lee, Myung-Su Kim, IL-WOong Tcho, Byung Chul Jang, Hwon Im, Sung-Yool Choi, Sung Gap Im, and Yang-Kyu Choi, “Energy-Efficient All Fiber-based Local Body Heat Mapping Circuitry Combining Thermistor and Memristor for Wearable Healthcare Device”, 2017 International Electron Devices Meeting (IEDM), 2017.12.04, USA

[18] Byung Chul Jang, Sang Yoon Yang, Junhwan Choi, Sung Kyu Kim, Sung Gap Im, and Sung-Yool Choi, Flexible memristive logic-in-memory circuit toward low power flexible electronic systems, NANO KOREA 2017, Kintex, Korea, 2017.07.13

[17] Byung Chul Jang, Hyejeong Seong, Jong Yun Kim, Beom Jun Koo, Sung Kyu Kim, Sang Yoon Yang, Sung Gap Im, Sung-Yool Choi, Flexible Memristive Memory Arrays based on Vapor-Phase Deposited Polymer Thin Film, 2017 Material Research Society (MRS) Spring Meeting, 2017.04.21, Phoenix, USA

[16] Gwang Hyuk Shin, Choong-Ki Kim, Gyeong Sook Bang, Byung Chul Jang, Myung Hun Woo, Yang-Kyu Choi, and Sung-Yool Choi, Multilevel resistive switching memory based on GO/MoS2/GO stack, AsiaNANO 2016, 2016.10.12, Japan

[15] Byung Chul Jang, Gwang Hyuk Shin, Sung Kyu Kim, and Sung-Yool Choi, Nanoscale Memristors for Nonvolatile Memory and Logic Applications (Keynote), AsiaNANO 2016, 2016.10.12, Japan

[14] Myung Hun Woo, Byung Chul Jang, Junhwan Choi, Gwang Hyuk Shin, Hyejeong Seong, Sung Gap Im, and Sung-Yool Choi, MoS₂-based floating gate memory with metal nanoparticle and polymer tunneling dielectric layer, ESSCIRC-ESSDERC 2016, 2016.09.14, Switzerland

[13] Gwang Hyuk Shin, Gyeong Sook Bang, Byung Chul Jang, Myung Hun Woo, and Sung-Yool Choi, Multilevel Resistive Swithing Memory using Solution Process with Two-dimensional(2D) Materials, NANO KOREA 2016, 2016.07.15, Korea

[12] Byung Chul Jang, Hyejeong Seong, Jong Yun Kim, Beom Jun Koo, Sung Kyu Kim, Sang Yoon Yang, Sung Gap Im, Sung-Yool Choi, Interface engineering by inserting multilayer graphene barrier electrode for low power and highly uniform polymer nonvolatile memory, Graphene 2016, 2016.04.21, Italy

[11] Gwang Hyuk Shin, Choong-Ki Kim, Gyeong Sook Bang, Byung Chul Jang, Myung Hun Woo, Yang-Kyu Choi, and Sung-Yool Choi, Multilevel resistive switching memory based on two-dimensional materials using simple solution process, Graphene 2016, 2016.04.21, Italy

[10] Khang June Lee, Byung Chul Jang, Hamin Park, Dae Yool Jung, Woonggi Hong, Tae Keun Kim, and Sung-Yool Choi, Uniaxial crumpled graphene structure as a spacer for improving plasmonic coupling, Graphene 2016, 2016.04.19, Italy

[9] Myung Hun Woo, Byung Chul Jang, Junhwan Choi, Gwang Hyuk Shin, Hyejeong Seong, Sung Gap Im, Sung-Yool Choi, MoS2-based floating gate memory with metal nanoparticle and polymer tunneling dielectric layer, ICAMD 2015, 2015.12.09, Korea

[8] Gwang Hyuk Shin, Choong-Ki Kim, Gyeong Sook Bang, Jong Yun Kim, Byung Chul Jang, Beom Jun Koo, Myung Hun Woo, Sung-Yool Choi, Multilevel resistive switching memory using two dimensional (2D) layered materials, ICAMD 2015, 2015.12.08, Korea

[7] Chang Hoon Jeon, Byung Hyun Lee, Byung Chul Jang, Sung Yool Choi, Yang Kyu Choi, Experimental study on Quantum Mechanical Effect for Insensitivity of Threshold Voltage against Temperature Variation in Strained SOI MOSFETs, IEEE SOI-3D-Subthreshold Microelectronics Unified Conference (S3S), 2015.10.08, USA

[6] Beom Jun Koo, Jong Yun Kim, Byung Chul Jang, Khang June Lee, Gwang Hyuk Shin, Sung-Yool Choi, Unipolar resistive switching memory based on graphene oxide for flexible crossbar array applications, Nano Korea 2015, 2015.07.02, Korea

[5] Byung Chul Jang, Hyejeong Seong, Jong Yun Kim, Beom Jun Koo, SungGap Im, Sung-Yool Choi, Interface engineering using multilayer graphene barrier electrode for uniform and reliable polymer memory, Nano Korea 2015, 2015.07.02, Korea

[4] Khang June Lee, Daewon Kim, Byung Chul Jang, Da-jin Kim, Yang-Kyu Choi, Sung-Yool Choi, Crumpled graphene-Au hybrid substrate for the surface-enhanced Raman spectroscopy, Nano Korea 2015, 2015.07.01, Korea

[3] Beom Jun Koo, Jong Yun Kim, Byung Chul Jang, Sung-Yool Choi, Unipolar resistive switching memory using graphene oxide for flexible one diode-one resistor (1D-1R) cell array, Graphene 2015, 2015 03.10, Spain

[2] Byung Chul Jang, Hyejeong Seong, Jong Yun Kim, Beom Jun Koo, Sung Kyu Kim, Sang Yoon Yang, Sung Gap Im, Sung-Yool Choi, Highly uniform and reliable polymer memory via iCVD using multilayer graphene barrier electrode, Graphene 2015, 2015.03.10, Spain

[1] Byung Chul Jang, Hyejeong Seong, Jong Yun Kim, Beom Jun Koo, Sung Gap Im, SY Choi, Highly uniform and reliable polymer memory based on iCVD polymer and multilayer graphene barrier electrode, International Conference on Advanced Materials and Devices (ICAMD) 2013, 2013.12.11

Domestic Conferences

[9] Byung Chul Jang, Yunyong Nam, Khan June Lee, June Hwe Cha, Tae Gyu Kang, Sang-Hee Ko Park, Sung-Yool Choi, “Functional memristive integrated circuitry on plastic substrate toward energy-efficient electronic systems”, The 25th Korean Conference on Semiconductors, Gangwon , Korea, February 05-07 (2018).

[8] Sangcheol Yang, Byung chul Jang, Gi Woong Shim, Junhwan Choi, Sung Gap Im,and Sung-Yool Choi, “CVD-grown MoS2-based charge storage nonvolatile memory with high-k polymer dielectric”, The 4th Korean Graphene Symposium, 2017.04.06

[7] Gwang Hyuk Shin, Choong-Ki Kim, Gyeong Sook Bang, Byung Chul Jang, Yang-Kyu Choi, and Sung-Yool Choi, “Multilevel resistive switching memory based on MoS2 embedded graphene oxide”,  The 4th Korean Graphene Symposium, 2017.04.06

[6] Myung Hun Woo, Byung Chul Jang, Junhwan Choi, Gwang Hyuk Shin, Hyejeong Seong, Sung Gap Im, and Sung-Yool Choi, “Floating gate memory based on MoS2 channel and iCVD polymer dielectric with metal nanoparticle charge trapping layer”, The 3rd Korean Graphene Symposium, 2016.04.14

[5] Byung Chul Jang, Hyejeong Seong, Jong Yun Kim, Beom Jun Koo, Sung Kyu Kim, Sang Yoon Yang, Sung Gap Im, and Sung-Yool Choi, “Highly uniform, low power polymer memory via interface engineering using multilayer graphene barrier electrode”, The 23rd Korean Conference on Semiconductors, 2016.02.22

[4] Myung Hun Woo, Byung Chul Jang, Junhwan Choi, Gwang Hyuk Shin, Hyejeong Seong, Sung Gap Im, and Sung-Yool Choi, “Metal nanoparticle embedded floating gate memory based on MoS2 with polymer tunneling dielectric layer”, The 23rd Korean Conference on Semiconductors, 2016.02.22

[3] Gwang Hyuk Shin, Byung Chul Jang, Myung Hun Woo, and Sung-Yool Choi, “Multilevel Resistive Switching Memory based on Two-Dimensional (2D) Nanomaterials”, The 23rd Korean Conference on Semiconductors, 2016.02.22

[2] Beom Jun Koo, Jong Yun Kim, Byung Chul Jang, Khang June Lee, Gwang Hyuk Shin, Sung-Yool Choi, “Electrode dependence of unipolar resistive switching behavior in graphene oxide resistive switching memory”, The 2st Korean Graphene Symposium, 2015.03.26

[1] Byung Chul Jang, Hyejeong Seong, Jong Yun Kim, Beom Jun Koo, Sung Gap Im, Sung-Yool Choi, “Highly uniform and reliable RRAM based on iCVD polymer using multilayer graphene barrier electrode”, The 1st Korean Graphene Symposium, 2014.04.03