Conf@2009
A. Deyasi, and J. P. Banerjee, “Numerical Studies of D.C Properties of Si-based SDR Structure Designed for IMPATT Diode at Ka-Band”, International Conference of BITM Transaction on EECC, vol. 1, pp. 455-458, 2009 [0974-9527]
A. Deyasi, and J. P. Banerjee, “Numerical Studies of D.C Properties of Si-based SDR Structure Designed for IMPATT Diode at Ka-Band”, International Conference of BITM Transaction on EECC, vol. 1, pp. 455-458, 2009 [0974-9527]