A. Deyasi and J. P. Banerjee, “Quantum-MechanicalAnalysis of Breakdown Characteristics of Si p+nn+ Device”, National Conference for Device, Communication & Networking, pp. 220-223, Aug 2008 [978-81-900531-8-3]
R. Mandal and A.Deyasi, “Theoretical Analysis of Mobility in Short-Channel MOS using Two-Dimensional Electron Gas”, National Conference for Device, Communication & Networking, pp. 183-186, Aug 2008 [978-81-900531-8-3]
A. Deyasi, “AProposed Theoretical Model for Impact Ionizationin Si & GaAs Considering different Scattering Mechanisms”, Indian Conference on Trends in Modern Engineering Systems, pp. 65-73, Feb 2008 [978-81-906401-0-7]
A. Deyasi, “Effect of Optical Illumination on Asymmetric MSM Structure”, National Seminarin Creativity in Engineering Education in the Era of Globalization, pp. 58-63, Feb2008