Papers

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Yearly Publication List

Presentations - Conferences

[Reliability, Solar Cells, and Biosensors] "Reliable Sensing with Unreliable Sensors: Reading the Heartbeats of Field Deployed Electronic Devices", Plenary Talk, XXII International Workshop on the Physics of Semiconductor Devices, Indian Institute of Technology, Mardas, Dec 13-17,  2023   

[Biosensors] "The Emergence of Microneedle-based Smart Sensor/Drug-Delivery Patches: A Scaling Theory Defines the Trade-off between Response Time and Limits of Detection", CSAC2023, September 16-30 ,  2023 .  

[Biosensors] "Reliable Sensing with Unreliable Sensors," Keynote presentation: 3rd International Conference on Advancement in Electrical and Electronic Engineering (ICAEEE 2024),  Dhaka University of Engineering & Technology, Gazipur (DUET). 

[Reliability]  "Topology and Reliability of Modern Solar Farms,"  Tutorial Presentation at IWPSD Conference,  Dec. 13, 2023. 

[Reliability]  "Reliable Electronics with Unreliable Devices: The Shanon-Hamming Era for Microelectronics," Plenary Talk at the IWPSD Conference, Chennai, Dec. 14, 2023. 

[Solar Cells]  "The Sun Also Rises: Learning to read the heartbeat of Desert Photovoltaics,"  M. Al. Alam, Seminar at Dubai Electric and Water Authority Research Center, July 23, 2023. 

[Solar Cells] "Physics-based Machine Learning for Photovoltaics," M. A. Alam, First Solar Seminar, Toledo, Ohio, Aug. 24, 2023. 

[Solar Cells] "Defining Desert Photovoltaics," M. A. Alam, Seminar at King Abdullah University of Science and Technology, Saudi Arabia,  Nov. 20, 2023. 

[Solar Cells] "Sun Also Rises: The Subcontinent Context," Keynote Presentation, 7th International Conference on the Developments in Renewable Energy Technology, ICDRET 2024 (https://icdret.uiu.ac.bd/), to be held on March 07-09, 2024. 

[Solar Cells] "Degradation mechanisms observed in hot desert regions,"  Distinguished Invited Presentation,  Dubai, Jan. 16,  2024.

2021

[Solar Cells]  "Light-activated interlayer contraction in 2D perovskites for high-efficiency solar cells,"  W. Li, S. Sidhik, H. Zhang, T. Boubacar, R. Asadpour, J. Hou, J. Essman, A. Torma, R. Saxena, J. J. Crochet , E. Tsai, J. Strzalka, C. Katan, M. A. Alam, J. Even, M. G. Kanatzidis, M. A. Alam, J.-C. Blancon, and A. D. Mohite, Nature Nanotechnology, 2021. PDF

[Transistors] "Highly Sensitive Active Pixel Image Sensor Array Driven by Large-area Bilayer MoS2 Transistor Circuitry,"  Seongin Hong, Nicolò Zagni, Sooho Choo, Na Liu, Seungho Baek, Arindam Bala, Hocheon Yoo, Byung Ha Kang, Hyun Jae Kim, Hyung Joong Yun, Muhammad Ashraful Alam,  and Sunkook Kim, Nature Photonics, 2021. 

[Solar Cells]   "Module Technology for Agrivoltaics: Vertical Bifacial vs. Tilted Monofacial Farms,"  M. H. Riaz, R. Younas, H. Imran, M. A. Alam, and N. Z.  Butt,  IEEE Journal of Photovoltaics, IEEE Journal of Photovoltaics,  11(2), 469-477, 2021.  DOI: 10.1109/JPHOTOV.2020.3048225

[Solar Cells] "A review of next-generation bifacial solar farms: predictive modeling of energy yield, economics, and reliability"  R. Khan,  T. Patel, R. Asadpour, I. Reza, N. Butt, and M. A. Alam et al. in Journal of Physics D: Applied Physics, 2021. (Invited Review Article)

[Solar Cells] "Global analysis of next-generation utility-scale PV: tracking bifacial solar farms," M. Tahir Patel, M. Sojib Ahmed, Hassan Imran, Nauman Z. Butt, M. Ryyan Khan,  and Muhammad A. Alam, Applied Energy, 2021. 

[Solar Cells] "Crop-specific Optimization of Bifacial PV Arrays for Agrivoltaic Food-Energy Production: The Light-Productivity-Factor Approach," Muhammad Hussnain Riaz, Hassan Imran, Habeel Alam, Muhammad Ashraful Alam, and Nauman Zafar Butt, Journal of Photovoltaic Technology, 2021.   

[Reliability]  "Space Charge Redistribution in Epoxy Mold Compounds of High-Voltage ICs at the Dry and Wet Conditions: Theory and Experiment," Woojin  Ahn; Davide  Cornigli; Dhanoop   Varghese; Srikanth   Krishnan; Susanna  Reggiani; Muhammad Ashraful Alam, IEEE Transaction on Dielectrics and Electrical Insulation, 2021. 

[Reliability]  "Three-Point I-V Spectroscopy Deconvolves Region-Specific Degradations in LDMOS Transistors, "  Yen-Pu Chen, Bikram K. Mahajan, Dhanoop Varghese, Srikanth Krishnan, Vijay Reddy, Muhammad Ashraful Alam,  Applied Physics Letters,  119(12), 2021.  DOI: 10.1063/5.0058477 https://doi.org/10.1063/5.0058477.

[Reliability]  "Quantifying Region-Specific Hot Carrier Degradation in LDMOS Transistors using a Novel Charge Pumping Technique, "  Bikram K. Mahajan, Yen-Pu Chen, Dhanoop Varghese, Srikanth Krishnan, Vijay Reddy, Muhammad Ashraful Alam,  IEEE IRPS, 2021. 

[Reliability]  "Super Single Pulse Charge Pumping Technique for Spatially Resolving Interface Defects, "  Yen-Pu Chen, Bikram K. Mahajan, Dhanoop Varghese, Srikanth Krishnan, Vijay Reddy, Muhammad Ashraful Alam,  IEEE Transactions of Electron Devices, 68(2), 726-732, DOI: 10.1109/TED.2020.3046168, 2021.  

[Reliability] "An Analytical Model of Hot Carrier Degradation in Power Transistors: Rediscovery of Universal Scaling"  Bikram K. Mahajan, Yen-Pu Chen, and Muhammad Ashraful Alam,  IEEE Transaction on Electron Devices,  68, 8, 2021.

[Reliability] "Hot carrier Degradation in Classical and Emerging Logic and Power Electronic Devices: Rethinking Reliability for Next-Generation Electronics"  Muhammad Ashraful Alam, Bikram K. Mahajan and Yen-Pu Chen,  IEEE Electron Devices Technology and Manufacturing Conference,  EDTM, 2021 (Invited). 

[Reliability] "Thermal Faraday Cage: A Potential Packaging Solution to High Voltage Power Transistor,"  Bikram K. Mahajan, Asad Z. Mamun, Yen-Pu Chen, and Muhammad A. Alam, SRC Techcon, 2021. 

[Reliability] "Self-Heating and Reliability-Aware “Intrinsic” Safe Operating Area of Wide Bandgap Semiconductors – An Analytical Approach,"  Bikram K. Mahajan, Yen-Pu Chen,  N. Zagni, and M. A. Alam, IEEE Transaction of Device and Materials Reliability, 2021. (In Press)

[Reliability] "Training a quantum annealing based restricted  Boltzmann machine on cybersecurity data,"  Vivek Dixit, Raja Selvarajan, Tamer Aldwairi, Yaroslav Koshka, Mark A. Novotny, Travis S. Humble, Muhammad A. Alam, and Sabre Kais, IEEE Trans.   Emerging Topics In Computational  Intelligence,  2021 (To appear).  https://arxiv.org/abs/2011.13996 

[Solar Cells] "Machine Learning Allows Synthesis and Functional Inteporation of Computational and Field-Data for Worldwide Utility-Scale PV Systems,"  Muhammed Tahir Patel and Muhammad A. Alam, Proc. of PVSC, 2021. (Best Student Paper Finalist)

[Solar Cells] "Worldwide Physics-Based Modeling of Solder Bond Failure in c-Si Solar Modules for Lifetime Prediction," Reza Asadpour, Muhammad Tahir Patel, Steven Clark,  and Muhammad A. Alam, PVSC Proc. 2021.  (Accepted for an oral presentation)

[Biosensors] "A Label-Free Disposable Electrochemical Immunosensor for the Detection of Calprotectin as a Biomarker in Diagnosis of Inflammatory Bowel Diseases." Vidhya Selvamani, Marco Fratus, Jiangshan Wang, Muhammad A Alam, Mohit S. Verma, Rahim Rahimi, Analyst, 2021. (In review)

[Solar Cells] "Ligand-Driven Grain Engineering of Two-Dimensional Perovskite Thin Film Transistors,"  Aihui Liang, Yao Gao, Reza Asadpour, Zitang Wei, Blake P. Finkenauer, Linrui Jin, Jiaqi Yang, Peilin Liao, Chenhui Zhu, Libai Huang, Bryan W. Boudouris, Muhammad A. Alam, Letian Dou, Nature Electronics,  2021. (In review)

[Reliability] "Reliability Challenges of Ferroelectric/Negative Capacitance Transistors for Memory/Logic Applications: An Integrative Perspective, "(Invited article). Nicolò Zagni and Muhammad Ashraful Alam, Journal of Material Research, DOI:10.1557/s43578-021-00420-1, 2021. 

[Reliability] "Hot Carrier Degradation and Positive Bias Temperature Instability of Back-end-of-Line,  nm-thick,  In2O3 Thin-Film Transistors," Yen-Pu Chen, P. Ye, et al. 2021 (In review)

[Biosensors] "Physics-informed Machine Learning for Soil Sensing.", S Chandra Mouli, Sotoudeh Sedaghat, Muhammed Ramazan Oduncu, Ajanta Saha, Rahim Rahimi, Muhammad A. Alam, Alexander Wei, Ali Shakouri and Bruno Ribeiro, AAAI Fall Symposium, Track:  Where AI Meets Food Security: Intelligent Approaches for Climate-Aware Agriculture, 2021. (Accepted)

2020

[Landau Switch] "Design Principles of Self-compensated NBTI-Free Negative Capacitor FinFET," Kamal Karda, Chandra Mouli and Muhammad Ashraful Alam, IEEE Trans. Elec. Devices, 2020 .  DOI: 10.1109/TED.2020.2983634 

[Landau Switch] "A Memory Window Expression to Predict the Scaling Trends and Endurance of FeFETs," N. Zagni, P. Pavan, P. and M. A. Alam,  Applied Physics Letters,  117(15), 2020.  DOI: 10.1063/5.0021081 https://doi.org/10.1063/5.0021081

[Solar Cells]  "Dark Lock-in Thermography Identifies Solder Bond Failure as the Root Cause of Series Resistance Increase in Fielded Solar Modules," R. Asadpour, D. B. Sulas-Kern, S. Johnston, J. Meydbray and M. A. Alam, in IEEE Journal of Photovoltaics, doi: 10.1109/JPHOTOV.2020.3003781. 

[Solar Cells] "Temperature-dependent Energy Gain of Bifacial PV Farms: A Global Perspective, " M. T. Patel, R. Vijayan, R. Asadpour, M.  Varadharajaperumal, M. R. Khan, and M. A. Alam, Applied Energy, 276,115405, 2020.  Link

[Solar Cells] "Bifacial PV Modules and Systems: Experience and Results from International Research and Pilot Applications 2020" Contributing authors: M. Alam, M. Ryyan Khan, and M. Tahir Patel,  Ed. J. S. Stein and C. Reise, Report IEA-PVPS T13-XX:2020, Task 13: Performance and Reliability of PV Systems,  PV Power Systems Program, International Energy Agency , 2020. 

[Reliability] "Effects of Filler Configuration on Moisture Transport in Epoxy Molding Compounds for HV-ICs Encapsulation,"  W. Ahn, D. Cornigli, D. Varghese, S. Krishnan, S. Reggiani, and M. A. Alam,  IEEE Transactions on Components, Packaging and Manufacturing Technology, 10(9), pp. 1534-1541,  2020. ISSN: 2156-3985 Digital Object Identifier: 10.1109/TCPMT.2020.3015658

[Reliability]  "A Novel ‘I-V Spectroscopy’ Technique to Deconvolve Threshold Voltage and Mobility Degradation in LDMOS," Yen-Pu Chen, Bikram K. Mahajan,  Dhanoop Varghese, Srikanth Krishnan, Vijay Reddy and Muhammad A.  Alam ,  IEEE International Reliability Physics Symposium, 2020. 

[Solar Cells]  "DEEDS: A Next-Generation Scientific Data Sharing and Analyzing Platform for PV Applications,"  T. Patel, R. Asadpour, and M. Alam, IEEE Photovoltaic Specialist Conference, 2020. 

[Solar Cells] " When and Where to Track: A Worldwide Comparison of Single-axis Tracking vs. Fixed Tilt Bifacial Farms", M. T. Patel, H. Imran, M. S. Ahmed, N. Z. Butt, M. A. Alam, and M. R. Khan, Proc. of IEEE Photovoltaic Specialist Conference, 2020. 

[Machine Learning]  "Training and Classification using a Restricted Boltzmann Machine on the D-Wave 2000Q," V. Dixit, R. Selvarajan, M. A. Alam, T. S. Humble, and S. Kais,  2020. 

[Reliability] "Training a Quantum Annealing based Restricted Boltzmann Machine on Cybersecurity Data,"   V. Dixit, R. Selvarajan, M. A. Alam, T. S. Humble, and S. Kais, 2020. (In review) 

[Biosensors] "Printable Nonenzymatic Glucose Biosensors Using Carbon Nanotube-PtNP Nanocomposites Modified with AuRu for Improved Selectivity"  Tran N.H Nguyen; Xin Jin; James K Nolan; Jian Xu, PhD; Khanh Vy H.Le; Stephanie Lam; Yi Wang; Muhammad A Alam; and Hyowon Lee ,  ACS Biomaterials Science and Engineering, 2020. 

[Biosensors] "Modeling, Design Guidelines, and Detection Limits of Self-powered Enzymatic Biofuel Cell Amperometric Sensor,"   Xin Jin, Amay J. Bandodkar, Marco Fratus, Reza Asadpour, John A. Rogers, and Muhammad A. Alam, Biomaterials and Bioelectronics, 2020. 

[Biosensors] "Fractal Web Design of Hemispherical Photodetector Array With Organic Dye-Sensitized Graphene Hybrid Composites,"   Eun Kwang Lee, Ratul Kumar Baruah, Jung Woo Leem, Woohyun Park, Zahyun Ku, Young L. Kim, Muhammad Ashraful Alam, and Chi Hwan Lee,  Advanced Materials, 2020  (In Review). 

[Biosensors] "Predicting Response of Printed Potentiometric Nitrate Sensors Using Image Based Machine Learning," Qingyu Yang, Kerry Maize, Xin Jin, Hongjie Jiang, M. A.  Alam, Rahim Rahimi, George T.C. Chiu, Ali Shakouri, Jan P. Allebach, Proc. of Printing for Fabrication Conference, 2020. 

[Solar Cells] "Light-activated contraction and phase transition in  2D perovskites enables high-efficiency photovoltaics." Wenbin Li, Siraj Sidhik, Boubacar Traore, Reza Azadpour, Jin Hou, Hao Zhang, Joseph Essman, Jared J. Crochet, Esther Tsai, Joe Strzalka, Claudine Katan, Muhammad A. Alam, Mercouri G. Kanatzidis, Jacky Even, Jean-Christophe Blanconand Aditya D. Mohite. (In review).

[Reliability] "Resilient Cyberphysical Systems and their Application Drivers: A Technology Roadmap,"  Chaterji, Somali; Naghizadeh, Parinaz; Alam, Ashraf; Bagchi, Saurabh; Chiang, Mung; Corman, David; Henz, Brian; Jana, Suman; Li, Na; Mou, Shaoshuai; Oishi, Meeko; Peng, Chunyi; Rompf, Tiark; Sabharwal, Ashutosh; and Sundaram, Shreyas,  IEEE Open Journal of the Computer Society, 2020.

2019

[Landau Switch] "Halide perovskite high-k field-effect transistors with dynamically reconfigurable ambipolarity,"   Canicoba, Noelia; Zagni, Nicolò; Liu, Fangze; McQuistian, Gary ; Fernando, Kasun; Belleza, Hugo ; Traore, Boubacar; Rogel, Régis; Tsai, Hsinshan ; Brizoual, Laurent Le; Nie, Wanyi; Crochet, Jared; Tretiak, Sergei; Katan, Claudine; Even, Jacky; Kanatzidis, Mercouri; Alphenaar, Bruce; Blancon, Jean-Christophe; Alam, Muhammad; Mohite, Aditya, ACS Materials Letters,  2019. (Editor's choice article)

[Solar Cells]  "Shockley-Queisser Triangle Predicts the Thermodynamic Efficiency Limits of Arbitrarily Complex Multi-junction Tandem and Bifacial Solar Cells,"  M. A. Alam and M. R. Khan,  Proc. National Academy of Sciences, 2019. 

[Biosensors]  "Two-dimensional MoS2 negative capacitor transistors for enhanced (super-Nernstian) signal-to-noise performance of next-generation nano biosensors," N. Zagni, P. Pavan, and M. A. Alam,  (Editor's choice article] Applied Physics Letters, 114, 233102, 2019. doi: 10.1063/1.5097828

[Biosensors] "Compliant submental skin sensor patch with remote monitoring controls for management of oropharyngeal swallowing disorders," Min Ku Kim, Cagla Kantarcigi, Bongjoong Kim, Ratul Kumar Baruah, Shovan Maity, Yeonsoo Park, Kyunghun Kim, Seungjun Lee, Jaime Bauer Malandraki, Shitij Avlani, Anne Smith, Shreyas Sen, Muhammad A. Alam, Georgia Malandraki, Chi Hwan Lee, Science Advances, 2019.  

[Biosensors]  "Generalized modeling framework of metal oxide-based non-enzymatic glucose sensor: concepts, methods, and challenges," Xin  Jin and Muhammad Ashraful Alam, IEEE J. of Biomedical Engineering, 2019.

[Biosensors]  "Flexible Electronic/Optoelectronic Microsystems with Scalable Designs for Chronic Bio-Integration" , E. Song C-H. Chiang, R. Li, Xin Jin,  J, Zhao, M. Hill , Y. Xia , L. Li, Y. Huang, SM Won , KJ Yu , X. Sheng, H. Fang ,  M A Alam , Y. Huang, J. Viventi, J-K Chang , J. A. Rogers, Proc. of Nat. Academy of Sciences, 2019.  

[Biosensors] "Image Based Quality Assurance of Fabricated Nitrate Sensor" Jan P Allebach Qingyu Yang, Yang Yan, Kerry Maize, Xin Jin, Hongjie Jiang, Muhammad Ashraful Alam, Babak Ziaie, George Chiu, Ali Shakouri. NIP & Digital Fabrication Conference, 2019

[Landau Switch] "Negative Capacitor Field Effect Transistor: A Review,"  M. Alam, M. Si, and P. Ye,  Applied Physics Letters, 2019.  PDF   Editorial

[Solar Cells] "Ground-sculpted Vertical Bifacial Solar Farms," M. Ryyan Khan, E. Sakr, X. Sun, P. Bermel, and M. Alam,  Applied Energy, 241, 592-598, 2019.  PDF

[Solar Cells] "Tailoring Interdigitated Back Contacts for High-performance Bifacial Silicon Solar Cells,"  Y. Sun,  Z. Zhou, R. Asadpour, M. A. Alam, and P. Bermel,  Appl. Phys. Lett. 114, 103901 (2019); https://doi.org/10.1063/1.5080075 

[Solar Cells] "Electrical Signatures of Corrosion and Solder Bond Failure in c-Si Solar Cells and Modules," Reza Asadpour, Xingshu Sun, and Muhammad Ashraful Alam, IEEE Journal of Photovoltaics 9 (3), 759-767, 2019; DOI: https://dx.doi.org/10.1109/JPHOTOV.2019.2896898 

[Solar Cells]  "A Worldwide Cost-based Design and Optimization of Tilted Bifacial Solar Farms,"  M. Tahir Patel, M. Ryyan Khan, Xingshu Sun, and Muhammad A. Alam, Applied Energy, 247, 467-479,  2019.

[Reliability]  "Reliabilty Physics of Self-heated Transistors,"  M. Alam,  International Reliability Physics Symposium, 2019. 

[Reliability]  “An Analytical Transient Joule Heating Model for an Interconnect in a Modern IC: Comparison of Material (Cu, Co, Ru) and Cooling Strategies,”  W. Ahn and M. A. Alam, International Reliability Physics Symposium, 2019. 

[Reliability] "Highly-stable self-aligned Ni-InGaAs and non-self-aligned Mo contact for Heat Shunting by and Thermal Stability of Innovative Source/Drain Contact to Enable Monolithic 3D Integration of InGaAs MOSFETs,"  S. Kim,  Seong  Kim, S.-H. Shin, J.-H. Han, D.-M. Geum, J.-P.  Shim, S. Lee, H. S.  Kim, G. Ju, J. D.  Song, M. A. Alam, and H.-J.  Kim,   IEEE Trans. Elec. Device,  2019 .

[Solar Cells]  "Implications of Seasonal and Spatial Albedo Variation on the Energy Output of Bifacial Solar Farms: A Global Perspective," M. T. Patel, M. Ryyan Khan, Aaesha Alnuaimi, Omar Albadwawwi, Jim J. John, and M. A. Alam, IEEE Photovoltaic Specialist Conference, 2019. 

[Solar Cells] "LCOE*: Re-thinking LCOE for Photovoltaic Systems," M. Tahir Patel, R. Asadpour, M. Woodhouse, C. Deline, and M. A. Alam,  IEEE Photovoltaic Specialist Conference, 2019. 

[Solar Cells] "Electrical Signature of Contact Degradation on the I-V Characteristics of a c-Si Solar Cell,"  R. Asadpour, X. Sun, and and M. A. Alam, Photovoltaic Specialist Conference, 2019. 

[Solar Cells] "Is Damp-Heat Degradation of a c-Si Solar Cell Essentially Univeral?" R. Asadpour and M. A. Alam,  Photovoltaic Specialist Conference, 2019. 

[Solar Cells]  "A Generalized Analytic Model to Tailor Back Contact Design of bifacial PERC-type Cu(In,Ga)Se2 solar cells."  Yubo Sun, Muhammad Ashraful Alam, and Peter Bermel, Proc. of IEEE Photovoltaics Specialists Conference,  2019. 

[Reliability]  "A Closed-form Transient Joule Heating Model for an Interconnect in an Integrated Circuit," Woojin Ahn, Haojun Zhang, Tian Shen, Patrick Justison, and M. A. Alam,  IEEE Electron Device Letters, 2019. 

[Reliability]  "A Device-to-System Perspective Regarding Self-Heating Enhanced Hot Carrier Degradation in Modern Field-Effect Transistors: A Topic Review ,"  Muhammad A. Alam, Bikram K. Mahajan, Yen-Pu Chen, Woojin Ahn, Hai Jiang and Sang Hoon Shin,  IEEE Trans. Electron Dev. 2019.  DOI: 10.1109/TED.2019.2941445

[Reliability]  "Electrothermal Performance Limit of β-Ga2O3 field -effect transistors," Bikram K. Mahajan, Yen-Pu Chen, Jinhyun Noh, Peide D. Ye and Muhammad A. Alam,  Applied Physics Letters, 115, 173508, 2019. (Editor's Choice Article)

2018

[Reliability] “Design and Optimization of β-Ga2O3 on (h-BN layered) Sapphire for High Efficiency Power Transistors: A Device-Circuit-Package Perspective ,” Bikram K. Mahajan, Yen-Pu Chen, Woojin Ahn, Nicolo Zagni and Muhammad A. Alam, IEEE International Electron Device Meeting, 2018. 

[Biosensors]  "Ultrathin Trilayer Assemblies as Long-Lived Barriers against Water and Ion Penetration in Flexible Bioelectronic Systems,"  Song, Enming, Rui Li, Xin Jin, Muhammad A. Alam, et al. ACS Nano (2018). 

[Biosensors] "Real-Time Characterization of Uptake Kinetics of Glioblastoma vs. Astrocytes in 2D Cell Culture Using Microelectrode Array," Jose F. Rivera,  Siddarth V. Sridharan, James K. Nolan, Stephen A. Miloro,  Muhammad A. Alam, Jenna L. Rickus,  and David B. Janes, Analyst, 2018, DOI: 10.1039/C8AN01198B 

[Solar Cells] "Real‐time monitoring and diagnosis of photovoltaic system degradation only using maximum power point—the Suns‐Vmp method," X. Sun, R. Vamsi Krishna Chavali, M. A. Alam, Progress in Photovoltaics,  http://dx.doi.org/10.1002/pip.3043 , 2018.

[Solar Cells]  "Atom-to-System Modeling of Solar Cells,"  Pradeep R. Nair and Muhammad A. Alam, Book Chapter,  SERIIUS Vignette  Springer Book, 2018.

[Solar Cells] "Design principles for electronic charge transport in solution-processed vertically stacked 2D perovskite quantum wells,"  Hsinhan Tsai, Reza Asadpour, Jean-Christophe Blancon, Constantinos C. Stoumpos, Jacky Even, Pulickel M. Ajayan, Mercouri G. Kanatzidis, Muhammad A. Alam, Aditya D. Mohite, and Wanyi Nie, Nat. Commun. 9, 2130 (2018) doi:10.1038/s41467-018-04430-2  PDF

[Landau Switch] "Steep-slope WSe2 Negative Capacitance Field-effect Transistors,"  M. Si C.Jiang, W.Chung, Y.Du, M. Alam, and P. Ye, Nano Letters, 2018 10.1021/acs.nanolett.8b00816

[Reliability] “[Invited] Integrated modeling of Self-heating of confined geometry (FinFET, NWFET, and NSHFET) transistors and its implications for the reliability of sub-20nm modern integrated circuits,” W. Ahn, S. H. Shin, C. Jiang, H. Jiang, M. A. Wahab, and M. A. Alam,  Microelectronics Reliability, 2018.

[Landau Switch] "A self-consistent, semiclassical electro-thermal modeling framework  for Mott devices," K. Karda, Chandra Mouli,  Shriram Ramanathan  and  M. A. Alam, IEEE Trans. Elec. Dev. 2018. 

[Landau Switch] "Proton-doped strongly correlated perovskite nickelate memory devices," K. Karda,  Shriram Ramanathan  and  M. A. Alam,  IEEE Elec. Dev. Lett. 2018.  

[Reliability] "Performance Potential of Ge CMOS Technology from a Material-Device-Circuit Perspective," S.-H. Shin, H. Jiang, W. Ahn, and M. A. Alam, IEEE Trans. Electron Devices, 65,(5), 2018. DOI: 10.1109/TED.2018.2816576

[Solar Cells] "Light-induced lattice expansion leads to high-efficiency and stable perovskite solar cells," Hsinhan Tsai, Reza Asadpour, Jean-Christophe Blancon, Oliver Durand, Joseph W. Strzalka, Pulickel M. Ajayan, Sergei Tretiak, Mercouri G. Kanatzidis, Jacky Even, Muhammad Ashraful Alam, Wanyi Nie, and Aditya D. Mohite, Science 360, 67–70, 2018. http://science.sciencemag.org/content/360/6384/67 

[Biosensors] “Droplet-based Electrical Sensing and Analytical Modeling interpret the Thermal Stability of Cell Membrane of Salmonella typhimurium,” A. Ebrahimi, L. N. Csonka, and M. A. Alam, Biophysical Journal, 2018 .

[Solar Cells] “Device Physics Underlying Passivating Contact Silicon Solar Cells: A Review,” R. V. Chavali, Stefaan De Wolf, M. A. Alam,  Progress in Photovoltaics: Research and Applications, 10.1002/pip.2959, 2018. 

[Solar Cells]  “Optimization and Performance of Bifacial Solar Modules: A Global Perspective,” X. Sun, M. R. Khan, C. Deline, and M.A. Alam, Applied Energy, 2018. 

[Biosensors] “Quantitative Sensing of Transient Hydrogen Peroxide Concentration Gradients with Millisecond and Micron-scale Resolution Using On-chip Microelectrode Array,"  Sridharan, Siddarth; Rivera, Jose; Jin, Xin; Alam, Muhammad; Rickus, Jenna; Janes, David, Biosensors and Biotechnology, 2018.

[Biosensors] “On-chip microelectrode array and in situ transient calibration for measurement of transient concentration gradients near surfaces of 2D cell cultures,” Sridharan, S.V., Rivera, J.F., Nolan, J.K., Alam, M.A., Rickus, J.L. and Janes, D.B., Sensors and Actuators B: Chemical, 260, 519-528, 2018.

[Reliability] “Thermoreflectance Imaging of Electromigration Evolution in Asymmetric Aluminum Constrictions,” H. Tian, W. Ahn, K. Maize, M. Si, P. Ye, M. A. Alam, A. Shakouri, and P. Bermel, and M. A. Alam,  J. of Applied Physics, 2018.

[Landau Switch]  "A Closed Form Analytical Model of Back-Gated 2D Semiconductor Negative Capacitance Field Effect Transistors", C. Jiang, M. Si,  J. Xu, P.  Ye, and M. A. Alam, IEEE J. Electron Device Society, 2018. 

[Solar Cells] “Thermodynamic limit of solar to fuel conversion for generalized photovoltaic-electrochemical system”, M. Tahir Patel, M. Ryyan Khan, Muhammad A. Alam, IEEE Journal of  Photovoltaics, 8(4), pp. 2156-3381, 2018.  DOI. 10.1109/JPHOTOV.2018.2831446 

[Solar Cells] “Direct Measurement of Bulk and Interface Trap Density in Planar Hybrid Perovskite Solar Cells," Nie, Wanyi; Tsai, Hsinhan; Blancon, Jean-Christophe; Crochet, Jared; Tretiak, Sergei; Even, Jacky; Ajayan, Pulickel M; Alam, Muhammad; Gupta, Gautam; Mohite, Aditya Corresponding Author: Dr. Aditya Mohite, ACS Energy Letters, 2017 (in review). 

[Reliability]  "BVDSS (drain to source breakdown voltage) instability in shield gate trench power MOSFETs,"  J. Hao, A. Ghosh, M. Rinehimer, J. Yedinak , M. A. Alam, International Reliability Physics Symposium, 2018. 

[Reliability] "Heat Shunting by Innovative Source/Drain Contact to Enable Monolithic 3D Integration of InGaAs MOSFETs," S.H. Kim, S. K. Kim, S.H. Shin, J.-H. Han, D.  M. Geum, J.-P. Shim, S. Lee, H. S. Kim, G. Ju, J. D. Song, M. A. Alam, and H.-J. Kim,  IEEE S3S Conference, 2018. 

[Solar Cells] "Physics and Performance Limits of Bifacial Solar Farms: A Global Perspective," M. A. Alam, X, Sun, M. Ryyan Khan, and Chris Deline, Invited presentation at the 2018 Workshop on Bifacial Solar Cells," 2018. 

[Solar Cells] "Shockley-Queisser Triangle: An Elegant Analytical Tool for Predicting the Thermodynamic Efficiency Limits of Multi-junction Tandem and Bifacial Cells with Arbitrary Concentration and Series Resistance," M. A. Alam and M. Ryyan Khan, Late News paper, Photovoltaic Specialists Conference, 2018. 

[Solar Cells] "Online Simulation Tools for Global Photovoltaic Performance:  Purdue University Meteorological Tool (PUMET) and Bifacial Module Calculator (PUB)," Binglin Zhao, Xingshu Sun, and Muhammad Ashraful Alam, Photovoltaic Specialists Conference,  2018. 

2017

[Solar Cells]  "Silicon Heterojunction System Field Performance ," D. Jordan, C. Deline, S. Johnston,  S. Rummel, B. Sekulic,  P. Hacke, D. Kristopher, X. Sun, M. A. Alam,  and  R. Sinton, IEEE Journal of Photovoltaics, 2017. 

[Solar Cells]  “Radiative Cooling to The Sky: Fundamental Physics, Cooling Materials and Structures, and Potential Applications,” X. Sun, Y. Sun, Z. Zhou, M.A. Alam, and P. Bermel, Nanophotonics, 2017. (Invited)

[Solar Cells]   “Modeling and designing multilayer 2D perovskite / silicon bifacial tandem photovoltaics for high efficiencies and long-term stability,” H. Chung, X. Sun, A. D. Mohite, R. Singh, L. Kumar, M. A. Alam, and P. Bermel, Optics Express, 2017.

[Solar Cells] “Vertical bifacial solar farms: Physics, design, and global optimization,” M. R. Khan*, A. Hanna*, X. Sun*, and Muhammad A. Alam*, Applied Energy, 2017. (*equal contribution) PDF

[Landau Switch] "Steep Slope Hysteresis-free Negative Capacitance MoS2 Transistors" by Mengwei Si, Chun-Jung Su, Chunsheng Jiang, Nathan Conrad, Hong Zhou, Kerry Maize, Gang Qiu, Chien-Ting Wu, Ali Shakouri, Muhammad Alam, and Peide Ye, Nature Nanotechnology, 2017.  doi:10.1038/s41565-017-0010-1

[Landau Switch] “Sub-60 mV/dec Ferroelectric HZO MoS2 Negative Capacitance Field-effect Transistor with Internal Metal Gate: the Role of Parasitic Capacitance”, M. Si, C. Jiang, C.-J. Su, Y.-T. Tang, L. Yang, W. Chung, M. A. Alam and P. D. Ye, International Electron Device Meeting, 2017. 

[Reliability] "A New Framework of Physics-Based Compact Model Predicts Reliability of Self-Heated Modern ICs: FinFET, NWFET, NSHFET Comparison,"  W. Ahn, C. Jiang, and M. A. Alam, International Electron Device Meeting, 2017. 

[Reliability]  "A Compact Quasi-Static Terminal Charge and Drain Current Model for Double-Gate Junctionless Transistors and Its Circuit Validation,"  C. Jiang, R. Liang, J. Xu, and M. Alam, IEEE Trans. Elecron Dev. 2017. 

[Reliability] "A Predictive Model for IC Self-Heating Based on Effective Medium and Image Charge Theories and Its Implications for Interconnect and Transistor Reliability," W. Ahn, H. Zhang, T. Shen, C. Christiansen, P. Justison, S.H. Shin, and M. A. Alam, IEEE Transactions on Electron Devices, 2017.

[Solar Cells]  “An Optics-Based Approach to Thermal Management of Photovoltaics: Selective-Spectral and Radiative Cooling," X. Sun, T. J Silverman, Z. Zhou, M. R. Khan, and M. A. Alam, IEEE Journal of Photovoltaics,  2017. 

[Biosensors]"Transferred, Ultrathin Oxide Bilayers as Biofluid Barriers for Flexible Electronic Implants," E. Song, Y. K. Lee, R. Li, J. Li, X. Jin, K. J. Yu, et al. ,Advanced Functional Materials, 2017.

[Biosensors]"Thin, Transferred Layers of Silicon Dioxide and Silicon Nitride as Water and Ion Barriers for Implantable Flexible Electronic Systems,"  E. Song, H. Fang, X. Jin, J. Zhao, C. Jiang, K. J. Yu, et al. ,Advanced Electronic Materials, 2017. 

[Biosensors]"Stability of MOSFET-Based Electronic Components in Wearable and Implantable Systems,"  X. Jin, C. Jiang, E. Song, H. Fang, J. A. Rogers, and M. A. Alam,IEEE Transactions on Electron Devices, vol. 64, pp. 3443-3451, 2017. 

[Biosensors] “A Physics-Based (Verilog-A) Compact Model for DC, Quasi-Static Transient, Small Signal, and Noise Analysis of MOSFET-based pH-sensors,” P. Dak, W. Seo, B. Jung, and M. A. Alam, IEEE Transaction on Electron Devices, 2017. 

[Solar Cells] “An Analysis of the Cost and Performance of Photovoltaic Systems as a Function of Module Area,”K. A. W. Horowitz, R. Fu, X. Sun, T. J, Silverman, M. Woodhouseand, and M. A. Alam, NREL Report, 2017.

[Solar Cells] "Directing solar photons to sustainably meet food, energy, and water needs," E. Gençer , C. Miskin , X. Sun , M. R. Khan , P. Bermel, M. A. Alam, and R. Agrawal, " Scientific Reports, 2017. 

[Reliability] The Impact of Self-heating on HCI Reliability in High Performance Digital Circuits,”H. Jiang, S. H. Shin, X. Liu, X. Zhang, and M. A. Alam, “ IEEE Electron Device Letters, 2017.

[Solar Cells]  “Role of Photon Recycling in Perovskite Solar Cells”, M. Ryyan Khan, Xufeng Wang, Reza Asadpour, Mark Lundstrom, and Muhammad A. Alam, Applied Physics Letter, 2017 (In review). 

[Reliability] "Role of the insulating fillers in the encapsulation material on the charge transport in encapsulation materials for HV-ICs" I. Imperiale, S. Reggiani, G. Pavarese, E. Gnani, A. Gnudi, G. Baccarani, D. Varghese, A. Hernandez-Luna, L. Nguyen, S. Krishnan,A. W. Ahn, M. A. Alam, IEEE Trans. Elec. Devices, 2017. 

[Solar Cells] “A Generalized Theory Explains Anomalous Suns-Voc Response of Si Heterojunction Solar Cells”, R. V. K. Chavali, J. V. Li, C. Battaglia, S. D. Wolf, J. L. Gray, M. A. Alam, IEEE Journal of Photovoltaics, 7(1), 169-176,  2017. 

2016

1991-2015

[Reliability] “3D Modeling of Spatio-temporal Heat-Transport in III-V Gate-All-Around Transistors Allows Accurate Estimation and Optimization of Nanowire Temperature”, M. A. Wahab, S.-H. Shin, and M. A. Alam, IEEE Trans. Elec. Dev. 2015. 

[Solar Cells] Bermel, Peter, Reza Asadpour, Chao Zhou, and Muhammad Ashraful Alam. "A modeling framework for potential induced degradation in PV modules." In Reliability of Photovoltaic Cells, Modules, Components, and Systems VIII, vol. 9563, pp. 98-105. SPIE, 2015.

[Reliability] “Low-Frequency Noise and Random Telegraph Noise on Near-Ballistic III-V MOSFETs” M.  Si, N. Conrad, S.-H. Shin, J. Gu, J. Zhang, M. Alam, & P. Ye,. Electron Devices, IEEE Transactions on, 62(11), 3508-3515, 2015. 

[Reliability] “Direct Observation of self-heating in III-V Gate-all-around Nanowire MOSFETs”, S.-H. Shin, M.A. Wahab, P. Ye, M. A. Alam, IEEE Trans. Elec. Dev. 2015. 

[Nanonets] “Super-Joule Heating in Graphene and Silver Nanowire Network”, K. Maize, S. Das, A. Mohammed, A. Shakouri, D. Janes, and MA Alam, Applied Physics Letters, 106(14), 143104, 2015.

[Landau switches] “An Anti-Ferroelectric Gated Landau Transistors to Achieve sub-60mV/dec Switching at Low voltage and High Speed”, K. Karda, A. Jain, C. Mouli, and MA Alam, Applied Physics Letters, 106(16), 163501, 2015. 

[Solar Cells] “A Physics-based Analytical Model for Perovskite Solar Cells,” X. Sun, R. Asadpour, W. Nie, AD Mohite, and MA Alam, IEEE Journal of Photovoltaics, 5(5), 1389-1394, 2015. 

[Biosensors] “Time-resolved PCA of droplet impedance identifies DNA hybdrization at nM concentration”, A. Ebrahimi and M. A. Alam, Sensors and Actuators B, Chemical 215, 215-224, 2015. 

[Nanonets] "Single Layer Graphene as a barrier layer for intense UV laser induced damages for Silver Nanowire Network", S. Das, Suprem, Q. Nian, M. Saei, P. Kumar, D. Janes, M. Alam, G. Cheng, ACS Nano, 9(11), 11121-11133, 2015. PDF

[2D Transistors] "High-mobility transistors based on large-area and highly crystalline CVD-grown MoSe2 films on insulating substrates", Jong-Soo Rhyee, Junyeon Kwon, Piyush Dak, Jin Hee Kim, Seung Min Kim, Jozeph Park, Young Ki Hong, Wongeon Song, Inturu Omkaram, Muhammad A. Alam*, and Sunkook Kim*, Advanced Materials, 2015.

[Nanonets] "Recent Progress in purifying semiconducting single-walled carbon nanotubes for transistor applications", A. E. Islam, J. Rogers, and M. A. Alam, Advanced Materials, 2015. 2015, DOI: 10.1002/adma.201502918. 

[2D Detector] "Substrate Induced photo-field effect in graphene phototransistors", N. Butt, B. Sarkar, Y. P. Chen, and M. A. Alam, IEEE Trans. Electron Devices, 62(11), 3734, 2015. 

[Solar Cells] "Thermal and Electrical Effects of Partial Shading in Monolithic Thin-Film Photovoltaic Modules", T. J. Silverman, M. G. Deceglie, X. Sun, R. Garris, M. A. Alam, C. Deline, S. Kurtz, IEEE Journal of Photovoltaics, 2015. : http://www.nrel.gov/docs/fy16osti/65164.pdf.

[Solar Cells] “Bifacial HIT-Perovskite Organic-Inorganic Tandem to Produce Highly Efficient Solar Cell,” R. Asadpour, R. V. K. Chavali, M. R. Khan, and M. A. Alam, Applied Physics Letters, 106 (24), 243902, 2015.

[Solar Cells] “Frozen Potential Approach to Separate the Photo-Current and Diode Injection Current in Solar Cells,” R. V. K. Chavali, J. E. Moore, X. Wang, M. A. Alam, M. S. Lundstrom, J. L. Gray, IEEE Journal of Photovoltaics, 5(3), 865-873, 2015. 

[Solar Cells] “Multi-Probe Characterization of Inversion Charge for Self-Consistent Parameterization of HIT cells,”  R. V. K. Chavali, S. Khatavkar, C. V. Kannan, V. Kumar, P. Nair, J. L. Gray, M. A. Alam, IEEE Journal of Photovoltaics, 5(3), 725-735, 2015. 

[Nanonets] “Direct Current Injection and Thermo-capillarity for Purification of Aligned Arrays of Single-Walled Carbon Nanotubes,” X. Xie, M. A. Wahab, Y. Li, A. E. Islam, B. Tomic, J. Huang, B. Burns, E Seabron, S. N. Dunham, F. Du, J. Lin, W. L. Wilson, J. Song, Y. Huang, M. A. Alam, and J. A. Rogers, J. of Applied Physics, 117(13), 134303, 2015. 

[Solar Cells] “High Efficiency Solution-Processed Perovskite Solar Cells with Millimeter-Scale Grains,” W. Nie, H. Tsai, R. Asadpour, J.-C. Blancon, A. J. Neukirch, G. Gupta, J. Crochet, M. Chhowalla, S. Tretiak, M. A. Alam, H.-L. Wang, and A. D. Mohite,  Science 347 (6221), 522, 2015.

[Biosensors] “Electrostatic desalting for controlling the ionic environment in droplet based biosensing platforms,” V. Swaminathan, P. Dak, B. Reddy, E. Salm, C. D-Guevara, Y. Zhong, A. Fischer, Y.-S. Liu, M. Alam, R. Bashir, Applied Physics Letters, 105, 053105,  2015.

[Solar Cells] “Enhanced Selective Thermal Emission with a Meta-Mirror following Generalized Snell’s Law” MR Khan, X. Wang, E. Sakr, MA Alam, and P. Bermel, MRS Proceedings, 1728, mrsf14-1728-I02-09, 2015. 

[Solar Cells] “Thermodynamic Limit of Bifacial Double-Junction Tandem Solar Cells”, M. R. Khan and M. A. Alam, Applied Physics Letters, 107, 223502, 2015. 

[Solar Cells] “A Collection Limited Theory Interprets the Extraordinary Response of Single Semiconductor Organic Solar Cells”, B. Ray, A. Baradwaj, R. Khan, B. Boudouris, and M. A. Alam, Proc. of National Academy of Sciences, 112(36), 11193-11198,  2015. 

[Reliability] “The Role of Dielectric Heating and Effects of Ambient Humidity in the Electrical Breakdown of Polymer Dielectrics,” S. Palit, D. Varghese, H. Guo, S. Krishnan, and M. Alam, IEEE TDMR, 15(3), pp. 308-318, 2015. 

[Biosensors] “Two-dimensional Layered MoS2 Biosensors Enable Highly Sensitive Detection of Biomolecules,” J. Lee, P. Dak, Y. Lee, H. Park, W. Choi, M. A. Alam, and S. Kim, Scientific Reports 4, 7352, 2014. 

[Reliability] “Implications of Rough Dielectric Surfaces on Charging-Adjusted Actuation of RF-MEMS”, S. Palit, X. Xu, A. Raman, and M. A. Alam, IEEE Electron Device Letters, 35(9), 948-950, 2014.

[Landau switches] “Stability-Constraints Define the Minimum Sub-threshold Swing of a Negative Capacitance Field Effect Transistors", A. Jain and M. A. Alam, IEEE Trans. Elec. Devices, 2014.

[Biosensors] “Non-Faradaic Impedance Characterization of an Evaporating Droplet for Microfluidic and Biosensing Applications”, P. Dak, A. Ebrahimi and M. A. Alam, Lab on a Chip, 2014. PDF

[Landau switches] “Proposal of a Hysteresis-Free Zero Subthreshold Swing Field Effect Transistors (ZSubFET)”, A. Jain and M. Alam, IEEE Trans. Elec. Devices, 2014. 

[Biosensors] “Improved Signal-to-Noise Ratio in Critical Point Flexure Biosensor due to Intrinsic Low-Pass Filtering”, A. Jain and M. A. Alam, Applied Physics Letters, 2014.

[Solar Cells] "Defect Characterization in Organic Semiconductors by Forward Bias Capacitance-Voltage (FB-CV) Analysis", B. Ray, A. Baradwaj, B. Boudouris, M. A. Alam, Journal of Physical Chemistry, 104 (21), 213306 2014. 

[Solar Cells] “Quantification of the Solid-State Charge Mobility in a Model Radical Polymer”, A. Baradwaj, L. Rostro, M. A. Alam, and B. Boudouris, Applied Physics Letters, 2014. 

[Solar Cells] “Nanostructured Electrodes Improve the Fill Factor of Organic Photovoltaics”, J. H. Beck, B. Ray, R. R. Grote, R. M. Osgood, C. T. Black, M. A. Alam and I. Kymissis, IEEE Journal of PV, 2014.

[Solar Cells] “Correlation of built-in potential and IV crossover in thin film solar cells”, J. Moore, S. Dongaonkar, R. V. Chavali, M. A. Alam and M. Lundstorm, IEEE JPV,  4(4), 1138-1148, 2014.

[Solar Cells] “Enhanced light trapping in solar cells with a meta-mirror following Generalized Snell’s Law”, M. R. Khan, X. Wang, P. Bermel, and M. A. Alam, Optical Express, 2014.

[Nanonets] “Electrodeposition of InSb branched Nanowires: Controlled Growth with Structurally Tailored Properties’, Suprem R. Das, Cem Akatay, Asaduzzaman Mohammad, Mohammad Ryyan Khan, Kosuke Maeda, Russell S. Deacon, Koji Ishibashi, Yong P Chen, Timothy D. Sands, Muhammad A. Alam, and David B. Janes, Journal of Applied Physics,  2014. 

[Solar Cells] “Correlated Non-Ideal Effects of Dark and Light I-V Characteristics in a-Si/c-Si Heterojunction Solar Cells”, R. V. Chavali, J. Wilcox, B. Ray, J. L. Gray and M. A. Alam, IEEE JPV, 4(3), 761-771, 2014 PDF.

[Solar Cells] “From Process to Modules: End-to-End Modeling of CSS-Deposited CdTe Solar Cells”, E. S. Mungan, Y. Wang, S. Dongaonkar, D. R. Ely, E. Garcia and M. A. Alam, IEEE J. of Photovoltaics, 4(3), 954-961, 2014. PDF

[Landau Switches] “Effective Nanometer Airgap of NEMS Devices using Negative Capacitance of Ferroelectric Materials”, M. Masuduzzaman, and M. Alam, NanoLetters, 2014 PDF

[Reliability] “Observation and Control of Hot Atom Damage in Ferroelectric Devices”, M. Masuduzzaman, D. Varghese, J. Rodriguez, S. Krishnan, and M. Alam, IEEE TED, 2014.

[Reliability] “Off-state degradation and correlated gate dielectric breakdown in high voltage drain extended transistors: A review”, D. Varghese, V. Reddy, S. Krishnan, M. A. Alam, Microelectronics Reliability, 54(8), 1477,  2014 PDF

[Reliability] “Origin and Implication of Hot Carrier Degradation of Gate-all-around III-IV MOSFETs”, S. H. Shin, M.A. Wahab, M. Si, J.J Gu, P.D. Ye, M. Masuduzzaman, and M.A. Alam, Proc. of International Reliability Physics Symposium (IRPS), 2014. PDF

[Reliability] “Electrical breakdown in polymers for BEOL applications: dielectric heating and humidity effects”, S. Palit and M. A. Alam, Proc. of International Reliability Physics Symposium (IRPS), 2014. PDF

[Nanonets] “Implications of Electrical Cross-Talk at High Density Aligned-Array of Single-Wall Carbon Nanotubes”, M. A. Wahab and M. A. Alam, IEEE Trans. Elec. Devices, 2014.

[Nanonets] “Microwave Purification of Large-Area Horizontally Aligned Arrays of Single-Walled Carbon Nanotubes,”  X. Xie, S. H. Jin, M. A. Wahab, A. E. Islam, C. Zhang, F. Du, E. Seabron, T. Lu, S. N. Dunham, H. I. Cheong, Y.-C. Tu, Z. Guo, H. U. Chung, Y. Li, Y. Liu, J.-H. Lee, J. Song, Y. Huang, M. A. Alam, W. L. Wilson, and J. A. Rogers, Nature Communications, 5, 5332, 2014. 

[Biosensors]  “The Future Scalability of pH-Based Genome Sequencers: A Theoretical Perspective”, J. Go and M. A. Alam, Journal of Applied Physics, 2013. PDF

[Biosensors] “Nanotextured Superhydrophobic Electrodes enable Detection of attomolar-scale DNA concentration within a Droplet by non-Faradaic Impedance Spectroscopy" A. Ebrahimi, P. Dak, E. Salm, S. Dash, S. Garimella, R. Bashir, and M. Alam, Lab on a Chip, DOI: 10.1039/C3LC50517K, 2013.  

[Biosensors] “A Compact Analytical Formulation For Current Transients In Electrochemical Systems,” P. R. Nair And M. A. Alam, The Analyst,  138(2):525-38. doi: 10.1039/c2an35346f, 2013.  

[Biosensors] “Ultra-localized Thermal Reactions in Sub-Nanoliter Droplets-in-Air,” E. Salm, C. D. Guevara, P. Dak, B. Dorvel, B. Reddy, M. A. Alam, and R. Bashir, Proc. of National Academy of Sciences, DOI:10.1073/pnas.1219639110, 2013.  

[Landau switches]  “Prospects of Hysteresis-Free Abrupt Switching (0mV/dec) in Landau Switches”, A. Jain and M. A. Alam, IEEE Transaction on Electron Devices, 60 (12), pp. 4269-4276, 2013. 

[Landau switches] “Universal Resonant and Pull-in Characteristics of Tunable-Gap Electromechanical Actuators”, A. Jain and M. A. Alam, IEEE Transactions on Electron Devices, 60(12), pp. 4240-4247, 2013. 

[Landau switches] “Extending and Tuning the Travel Range of Microelectromechanical Actuators using Reconfigurable Nanostructured Electrodes”, A. Jain and M. A. Alam, IEEE/ASME Journal of Microelectromechanical Systems, 2013. 

[Landau switches] “Universal Scaling and Intrinsic Classification of Electromechanical Switches,” S. Palit, A. Jain, and M. A. Alam, Journal of Applied Physics, 2013.

[Reliability] “Performance and Variability Studies of InGaAs Gate-all-around Nanowire MOSFETs”, Invited Talk, N. Conrad, S. Shin, J. Gu, M. Si, H. Wu, M. Masuduzzaman, M. A. Alam, P. Ye, IEEE Transactions on Device and Materials Reliability, 13(4), 489-496, 2013.

[Reliability] “A Comparative Study of Different Physics Based NBTI Models,”, S. Mahapatra, N. Goel, S. Desai, S. Gupta, B. Jose, S. Mukhopadhyay, K. Joshi, A. Jain, A. E. Islam, and M. A. Alam, IEEE Trans. Electron. Devices, 60 (3),  pp. 901-916, 2013.

“Role of Atomic Variability in Dielectric Charging: A First Principles-based Multi-scale Modeling Study”, R. P. Vedula, S. Palit, M. A. Alam, and A. Strachan, Physical Review B,  vol. 88 (20), pp. 205204, 2013.

“Using Nanoscale Thermocapillary Flow to Create Arrays of Purely Semiconducting Single Walled Carbon Nanotubes”, S. Hun Jin, S. N. Dunham,  J. Song, X. Xie, J. Kim, C. Lu, A. Islam, J. Kim, F. Du, J. R. Felts, Y. Li, F. Xiong, M. A. Wahab, M. Menon, E. Cho1, K. L. Grosse, E. Pop, M. A. Alam, W. P. King, Y. Huang, J. A. Rogers,  Nature Nanotechnology, 2013.

[Flexible Electronics] “Electrostatic Dimension of Aligned Array Carbon Nanotube Field Effect Transistors,” A. Wahab, S.-H. Jin, A.E. Islam, Jaeseong Kim, J. Kim, Woon-Hong Yeo, D. Lee, H. Chung, J. Rogers, M. A. Alam, ACS Nano, 2013. 

[Flexible Electronics] “Co-percolating Graphene-Wrapped Silver Nanowire Network for High Performance, Highly Stable, Transparent Conducting Electrodes”, R. Chen, S. Das, C. Jeong, M. R. Khan, D. Janes, and M. A. Alam,  Advanced Functional Materials, 2013. 

[Solar Cells] “Prospects of Layer-Split Tandem Cells for High-Efficiency OPV”,  R. Khan, B. Ray, and M. A. Alam, Special Issue of Solar Energy Materials and Solar Cells, Sept. 2013.

[Solar Cells] “Fundamentals of PV Efficiency Interpreted by a Two-Level Model”, M. A. Alam and M. R. Khan, American Journal of Physics, 2013. 

[Solar Cells]“Geometrical Design of Thin Film PV Module for Improved Shade Tolerance and Performance”, S. Dongaonkar and M. A. Alam,  Progress in Photovoltaics: Research and Applications, 2013.  arXiv:1303.4604 

[Solar Cells] “Performance and Reliability Implications of Two Dimensional Shading in Monolithic Thin Film Photovoltaic Modules”, S. Dongaonkar, C. Deline, and M. A. Alam,  IEEE Journal of Photovoltaics, 2013.  arXiv:1303.4445

[Solar Cells] “In-Line Post-Process Scribing for Reducing Cell to Module Efficiency Gap in Monolithic Thin-Film Photovoltaics”, S. Dongaonkar and M. A. Alam,  IEEE Journal of Photovoltaics, 2013.  

[Solar Cells] “The Essence and Efficiency Limits of Bulk-Heterostructure Organic Solar Cells: A Polymer-to-Panel Perspective,” J. Mat. Research. Invited Feature Article, 2013.

[Solar Cells] “Modeling the Effects of Na Incorporation on CIGS Solar Cells,” S. Mungan, X. Wang, and M. A. Alam, IEEE Journal of Photovoltaics, 3(1), p. 451, 2013. 

[Solar Cells] “Design of GaAs Solar Cells Operating Close to the Shockley-Queisser Limit”, X. Wang, M. R. Khan, J. Gray, M. Alam, and M. Lundstrom, IEEE J. Photovoltaics, 99, 1-8, 2013. PDF

[Solar Cells] “Universal Statistics of Parasitic Shunt Formation in Solar Cells and Its Implications for Cell-Module Efficiency Gap”, S. Dongaonkar, S. Loser, E. J. Sheets, K. Zaunbrecher, R. Agrawal, T. Mark, and M. A. Alam, Energy and Environmental Sciences, 10.1039/C3EE24167J, 2013.

"The Origin of Broad Distribution of Breakdown Times in Polycrystalline Thin Film Dielectrics", M. Masuduzzaman, M. A. Alam, Applied Physics Letters, 2012. PDF.  

“Wavelength Dependent Absorption in Structurally Tailored Randomly Branched Vertical InSb Nanowires”, M. Asaduzzaman, S. Das, R. Khan, M. A. Alam, and D. Janes, Nano letters 12.12 (2012): 6112-6118.2012. 

[Solar Cells]“Achieving Fill factor exceeding 80% by Interface Engineering”, Biswajit Ray and Muhammad Alam, Journal of Photovoltaic Technology, 2012. 

[Solar Cells]n"Nano-structured Electrode for Organic Solar Cells: Analysis and Design Fundamentals", B. Ray, R. Khan, M. A. Alam, Journal of PV Technology, 2012.

[Biosensors] “The Flexure-FET Biosensor to Break the Fundamental Sensitivity Limits of Nanobiosensors using Nonlinear ElectroMechanical”, A. Jain, P. Nair, and M. A. Alam, Proc. of National Academy of Sciences, 109 (24) 9304-9308, 2012. PDF

[Solar Cells] “Self-assembly of Single Dielectric Nanoparticle Layers and Integration in Polymer-based Solar Cells,” J. E. Allen, B. Ray, M. Ryyan Khan, K. G. Yager, M. A. Alam and C.T. Black, Applied Physics Letters,101, 063105, 2012. PDF

[Nanonets] “Electroluminescence in Aligned Arrays of Single-Wall Carbon Nanotubes with Asymmetric Contacts”, X. Xie, A. E. Islam, M. A. Wahab, Y. Lina, X. Ho, M. A. Alam, and J. A. Rogers, ACS Nano, DOI: 10.1021/nn3025496, 2012.

[Biosensors] “Theory of Signal and Noise in Double Gated Nanoscale Electronic pH Sensing”, J. Go, P. Nair, and M. A. Alam, Journal of Applied Physics, 112(3), 034516, 2012. PDF

[Biosensors] “Fabrication of High-k Hafnium Oxide Based Silicon Nanowires for Sensitive Detection of Small Nucleic Acid Oligomers”,  Brian Dorvel, B. Reddy, J. Go, M. A. Alam, and R. Bashir, ACS Nano, 6(7), 6150-6164, 2012.

[Biosensors] “Coupled Heterogeneous Nanowire-Nanoplate Planar Transistor Sensors for Giant (>10V/pH) Nernst Response",  J. Go, P. Nair, B. Reddy, B. Dorvel, R. Bashir,  and M. A. Alam, ACS Nano, 6(7):5972-9. 2012. 

[Reliability] “Theory of charging and charge transport in 'intermediate' thickness dielectrics and its implications for characterization and reliability",  S. Palit and M. A. Alam, Journal of Applied Physics,  6 (7),  5972–5979, 2012. 

[Reliability] “Probing Bulk Defect Energy Bands Using Generalized Charge Pumping Method”, M. Masuduzzaman, B. Wier, and M. A. Alam, Journal of Applied Physics, 111(7), 074501,  2012.   

[Solar Cells] “Random vs. Regularized OPV: Limits of Performance Gain of Organic Bulk Heterojunction Solar Cells by Morphology Engineering,” B. Ray and M. A. Alam,  Solar Energy Materials and Solar Cells, 2012. 

[Solar Cells]“Can Morphology Tailoring Improve the Open Circuit Voltage of Organic Solar Cell”, B. Ray, M. S. Lundstrom, and M. A. Alam,  Applied Physics Letters, 100, 013307, 2012.  

[Nanonets] “On the Threshold of Hierarchal Percolating Systems,” J. Li, B. Ray, M. Alam, and M. Ostling, Physical Review E, 2012.   

[Solar Cells] “Fundamentals of PV Efficiency Interpreted by a Two-Level Model”, M. A. Alam and M. R. Khan, 2012. PDF

[Nanonets] “Sources Of Hysteresis In CNT-FET Transistors And Their Elimination Via Methylsiloxane Encapsulants And Optimized Growth Procedures” S-.H. Jin, A. E. Islam, T.-I. Kim, J.-H. Kim, M. Alam, And J. Rogers, Adv. Functional Mater. 2012.   

[Solar Cells] “Modeling and Simulation in Photovoltaics Research, Development, and Manufacturing”, M. S. Lundstrom, M. A. Alam, and R. H. Havemann, Future of Photovoltaics, Dec. 2011.

[Nanonets] “Prospects of Nanowire-Doped Polycrystalline Graphene Films for an Untratransparent, High Conductive Electrode”, C. Jeong, P. Nair, M. Khan, M. Lundstrom, and M. Alam, Nanoletters, DOI:10.1021/nl203041n, 2011.  

[Reliability] “The Origin and Consequences of Push-Pull Breakdown in Series Connected Dielectrics”, M. Masuduzzaman, D. Varghese, H. Guo, S. Kirshnan, and M. A. Alam, Applied Physics Letters, 99, 263506, 2011.  

[Nanonets] “Self-Consistent Electro-Thermal Analysis of Nanotube Network Transistors”, S. Kumar, N. Pimparkar, J. M. Murthy, and M. A. Alam, Journal of Applied Physics, 109, 014315, 2011.  

[Nanonets] “Diameter-dependent analytical model for light spot movement in carbon nanotube array transistors,” T.M. Abdolkader and M. A. Alam, Applied Physics Letters, 98, 1, 2011. PDF

[Reliability, MEMS] “Strategies for Dynamic Soft-Landing in Capacitive Microelectromechanical Switches”, A. Jain, P. Nair, and M. Alam, 98, 234104, 2011.  

[Reliability, MEMS] “A Physics-Based Predictive Modeling Framework for Dielectric Charging and Creep in RF MEMS Capacitive Switches and Varactors”, A. Jain, S. Palit, and M. Alam, Journal of MEMS, 21(2), 420, 2011. 

[Solar Cells] “Physics and Statistics of  Non-ohmic Shunt Conduction and Metastability in Amorphous Silicon p-i-n Solar Cells”, S. Dongaonkar, Karthik Y., S. Mahapatra, and M. Alam, IEEE J. of Photovoltaics,  1(2), 111-117, 2011.  

[Reliability] “Markov-Chain Formulation of Reaction-Diffusion Model and Its Implications for Statistical Distribution of Interface Defects in Nanoscale Transistors”, A. E. Islam and M. A. Alam, J. of Computational Electronics,  2011.   

[Solar Cells] “A Compact Physics Model for Morphology Induced Intrinsic Degradation in Polymer based Bulk Heterojection Solar Cells”, B. Ray and M. A. Alam, Applied Physics Letters, 99, 033303, 2011. PDF(Also selected for the July 2011 issue of APL: Organics Electronics and Photonics)

[Solar Cells] “Annealing Dependent Performance of Organic Bulk-Heterojunction Solar Cells:  A Theoretical Perspective”, B. Ray, P. Nair, and M. Alam, Solar Energy Materials and Solar Cells,doi:10.1016/j.solmat.2011.07.0062011.  

[Biosensors] “Silicon Field Effect Transistors as Dual-Use Sensor-Heater Hybrids”, B. Reddy, O. Elibol, P. Nair,  B. Dorvel, F, Butler, Z. Ahsan, D. Bergstrom, M. Alam, and R. Bashir,  Analytical Chemistry,dx.doi.org/10.1021/ac102566f, 2011. PDF.

[Biosensors] “High-k dielectric Al2O3 nanowire and nanoplate field effect sensors for improved pH sensing”, B. Reddy, B. Dorvel, J. Go, P. Nair, O. Elibol, C. Credo, J. Daniels, E. Chow, X. Su, M. Varma, M. Alam, and R. Bashir,  Biomedical Microdevices, DOI 10.1007/s10544-010-9497-z, 2011. PDF.

[Reliability] “Essential Aspects of Negative Bias Temperature Instability” (Invited Paper), A. E.  Islam, S. Mahapatra, S. Deora, and V.D. Maheta, and M. A. Alam, 219the ECS Meeting, vol. 35(4), 2011. In Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics, Editor: R. Sah. PDF. Audio

[Nanonet] “The Physics of Nanonet Fabrics and Its Application in Electronic, Optoelectronics, Biosensing, Energy Storage, and MEMS Applications”, (Invited Tutorial Paper) M. A. Alam, S. Kumar, N. Pimparkar, P. Nair, J. Go. And A. Jain, 219the ECS Meeting, vol. 35(3), pp. 55-65, 2011. PDF.

[Reliability] “On State Hot Carrier Degradation in Drain Extended NMOS Transistors”, D. Varghese, P. Moens, and M. A. Alam, IEEE Trans. Elec. Devices, 2010.

[Biosensors] “Theory of Selectivity of Label-Free Nanobiosensors: A Geometro-Physical Perspective”, P.R. Nair and M.A. Alam, Journal of Applied Physics, vol. 107, pp. 064701, 2010. PDF

[Nanonets] “Scaling Properties in Transistors that Use Aligned Arrays of Single Wall Carbon Nanotubes”, X. Ho, L. Ye, S. Rotkin, Q. Cao, S. Unarunotai, S. Salamat, M. A. Alam,  J. Rogers,  Nano Letters,  10(2), pp. 499-503, 2010. PDF

[Biosensors] “Kinetic Response of Surfaces defined by Finite Fractals”, P. Nair and M.A. Alam, Fractals, 2010. PDF

[Reliability] “On-State Hot Carrier Degradation in Drain Extended NMOS Transistors”, D. Varghese, P. Moens, M. A. Alam, IEEE Trans. on Electron Devices, 57(10), pp. 2704-2710, 2010. PDF

[Transistors] “Bipolar Mode Operation and Scalability of Double Gate Capacitorless 1T DRAM Cells”, G. Guisi, M. A. Alam, F. Crupi, and S. Pierro, IEEE Trans. Electron Devices, vol. 57(8), 1743-1750, 2010.  PDF

[Solar Cells] “On the Nature of Anomalous Shunt Leakage in Amorphous Silicon p-i-n Solar Cells”, S. Dongaonkar, D. Wang, M. Frei, S. Mahapatra, and M. Alam, IEEE Electron Device Letters, 2010. PDF

[Biosensors] “Detection Limits of Magnetic Biobarcode Sensors and the Phase Space of Nanobiosensing”, P.R. Nair and M.A. Alam, Analyst, 2010. PDF

[Solar Cells] “Universality of non-ohmic Shunt Leakage in Thin Film Solar Cells”, S. Dongaonkar, J. Servaites, G. Ford, S. Loser, J. Moore, R. Gelfand, H. Mohensi, H. Hillhouse, R. Agrawal, M. Ratner, T. Marks, M.Lundstrom, and M. Alam. Journal of Applied Physics, 108, 124509, 2010. PDF

[Reliability] “Extraction of Interface Trap States of MOS Devices on Alternative High-Mobility Substrates from the Low Frequency Gate C-V Characteristics”,  Md. M. Satter, D. Varghese, A. E. Islam, M. A. Alam, andAnisul Haque, Solid State Electronics, 2010. 

[Reliability] “Isolation of NBTI Stress Generated Interface Trap and Hole Trapping Components in PNO p-MOSFETs”, S. Mahapatra, V.D. Maheta, A. E. Islam, M.A. Alam, Trans. On Electron Devices, vol. 56(2), pp. 236-242, 2009.

[Biosernsors] “Localized Heating on Silicon Field Effect Transistors: Device Fabrication and Temperature Measurements in Fluid”, O.H. Elibol, B. Reddy Jr., P.R. Nair, B. Dorvel, F. Butler, Z. Ahsan, D. E. Bergstrom, M.A. Alam, R. Bashir, Lab On a Chip, 9, pp. 2789-2795, 2009. PDF

[Biosensors] “Device Considerations for Development of Conductance based Sensors”, K. Lee, P.R. Nair, A. Scott, M. A. Alam, and D. Janes, Journal of Applied Physics, 105, pp. 102046, 2009. PDF

“Statistical Interpretation of Femto-Molar Detection”, J. Go and M.A. Alam, Applied Physics Letters, 95(3), p. 033110, 2009. 

“A Common Framework of NBTI Generation and Recovery in Plasma Nitrided SiON p-MOSFETs”, S. Doera, V.D. Maheta, A.E. Islam, M.A. Alam, and S. Mahapatra, IEEE Electron Device Letters, 30(9), pp. 978-980, 2009. PDF

"Material Dependence of Negative Bias Temperature Instability (NBTI) Stress and Recovery in SiON p-MOSFETs," S. Mahapatra, V. D. Maheta, S. Deora, E. N. Kumar, S. Purawat, C. Olsen, K. Ahmed, A. E. Islam and M. A. Alam, (Invited), Journal of Electrochemical Society, pp. 243-263, 2009. PDF

“Theory and Practice of ‘Striping’ for Improved On/Off Ratioin Carbon Nanotube Thin Film Transistors”, N. Pimparkar, Q. Cao, J. Rogers, M.A. Alam, Nano Research, vol. 2(2), pp. 167-175, 2009.

“Charge-Pumping as a Monitor of OFF-state TDDB in Asymmetrically Stressed Transistors”, D. Varghese and M. Alam, IEEE Electron Device Letters, 39(9), pp. 972-974, 2009. PDF

“Importance of Diameter Distribution in a Directly-Bridging CNT Array Transistors,” S. Salamat, X. Ho, J. A. Rogers, and M. A. Alam, IEEE Nanotechnology, 2010.

S. Deora, V. D. Maheta, A. E. Islam, M. A. Alam, and S. Mahapatra, “A Common Framework of NBTI Generation and Recovery in Plasma Nitrided SiON p-MOSFETs”, IEEE Electron Device Letters, 30(9), pp. 978-980, 2009. 

 “Charge-Pumping as a Monitor of OFF-state TDDB in Asymmetrically Stressed Transistors”, D. Varghese and M. Alam, IEEE Electron Device Letters, 30, 972-974,  2009.

“Material Dependence of Negative Bias Temperature Instability (NBTI) Stress and Recovery in SiON p MOSFETs”, S. Mahapatra, V. D. Maheta, S. Deora, E. N. Kumar, S. Purawat, C. Olsen, K. Ahmed, A. E. Islam and M. A. Alam, (Invited Paper) Journal of Electrochemical Society, 2009.

“Exploring the Capability of Multi-Frequency Charge Pumping in Resolving Location and Energy Levels of Traps within Dielectric”, M. Masuduzzaman, A. E. Islam, and M. A. Alam, IEEE Transaction of Electron Devices (T-ED), 55(12), pp. 3421-3431, 2008. PDF

 “Isolation of NBTI Stress Generated Interface Trap and Hole Trapping Components in PNO p-MOSFETs”, S. Mahapatra, V.D. Maheta, A. E. Islam, M.A. Alam, Trans. On Electron Devices, vol. 56(2), pp. 236-242, 2009.

 “Theory and Practice of ‘Striping’ for Improved On/Off Ratioin Carbon Nanotube Thin Film Transistors”, N. Pimparkar, Q. Cao, J. Rogers, M.A. Alam, Nano Research, 2(2), pp. 167-175, 2009. PDF

“Medium Scale Carbon Nanotube Thin Film Integrated Circuits on Flexible Plastic Substrates”, Q. Cao, H.-S. Kim, N. Pimparkar, J.P. Kulkarni, C. Wang, M. Shim, K. Roy, M.A. Alam, J. Rogers, vol. 454(24), pp. 495-500, 2008. 

 “On the Possibility of Degradation-Free Field Effect Transistors,” A. E. Islam, and M. A. Alam, Applied Physics Letter, 92, 173504, 2008. PDF 

“On-chip Pattering of Biomolecules in  Fluid for Integrated Sensor Platform,” Eibol, J. Reddy, P. Nair, D. Bergstrom, M. Alam and R. Bashir, Proc. of National Academy of Sciences, 2009.

“Optimization of Gate Leakage and NBTI for Plasma-Nitrided Gate Oxides by Numerical and Analytical Models (Invited),” A. E. Islam, G. Gupta, K. Ahmed, S. Mahapatra and M. A. Alam, IEEE Transaction on Electron Devices, 55(5), pp. 1143-1152, May 2008. PDF 

“Screening-limited Response of Nanobiosensors”, P. Nair and M. Alam, Nanoletters, 2008. PDF 

“Electrical Detection of Biological Interaction between TAT Peptide and TAR RNA via GaAs Junction Field Effect Transistors,” Kangho Lee, Pradeep R Nair, Muhammad A. Alam, and David B. Janes,  Journal of Applied Physics, 103(11), pp. 114510-114510-7, 2008.

“Defect generation in p-MOSFETs Under Negative Bias Stress: An Experimental Perspective,” (Invited) S. Mahapatra and M. A. Alam, IEEE Transaction on Material and Reliability, March 2008. PDF

“A Bottom-up Redefinition for Mobility and  the Effect of Poor Tube-Tube Contact on the Performance of CNT Nanoelectronics,” N. Pimparkar and M. Alam, IEEE Electron Device Letters, 2008.

 “Exploring the Capability of Multi-Frequency Charge Pumping in Resolving Location and Energy Levels of Traps Within Dielectric”, Muhammad Masudduzzaman, A. E. Islam, and M. A. Alam, Transaction on Electron Devices, vol. 55(12), pp. 3421-3431, 2008. PDF

“Theory of Breakdown Position Determination by Voltage- and Current Ratio Methods”.  M. A. Alam, D. Varghese and B. Kaczer, Transaction on Electron Devices, vol. 55(11), pp. 3150-3158, 2008. PDF

“Reliability- and Process Variation Aware Design of Integrated Circuits, (Invited) ” M. A. Alam, Microelectronics Reliability, 48, pp. 1114-1122,  2008. 

[Nanonets] “Percolation Effects on the Thermal Conductivity of 3D Nanotube Composites”, S. Kumar, M. Alam, J. Murthy, Proc. of ASME International, 2008. 

[Solar Cells] “Device Optimization for Organic Photovoltaics with CNT Networks as Transparent Electrode,” N. Pimparkar, M. Chowala, M. Alam, IEEE Photovoltaics Specialist Conference, Aug. 2008. PDF

[Biosensors] “Surface Passivation Issues for Nanoplate Sensors,” Brian R. Dorvel, Oguz H. Elibol, Bobby Reddy, Jr., Pradeep R. Nair, Muhammad A. Alam, Rashid Bashir, Proc. of American Chemical Soceity, 2009.

[Reliability] “Mobility Degradation Due to Interface Traps in Plasma Oxinitride PMOS Devices”, A. E. Islam, V. D. Maheta, H. Das, S. Mahapatra, and M. A. Alam, Proc. of International Reliability Physics Symposium, Apr 2008, pp. 87-96.   PDF      Breeze Presentation

[Reliability] “Separation method of hole trapping and interface trap generation and their roles in NBTI Reaction-Diffusion model”, J. H. Lee, W. H. Wu, A. E. Islam, M. A. Alam and A. S. Oates, Proc. of International Reliability Physics Symposium, Apr 2008, pp. 745-746. PDF

[Reliability] “Single Event Upsets in Floating Gate Memory Cells,” N. Z. Butt, and M. A. Alam, Proc. of International Reliability Physics Symposium, Apr 2008, pp. 547-555. PDF

[Reliability] “A Comprehensive Analysis of Off-State Stress in Drain Extended PMOS Transistors: Theory and Characterization of Parametric Degradation and Dielectric Failure,” D. Varghese, V. Reddy, H. Shichijo, D. Mosher, S. Krishnan, and M. A. Alam, Proc. of International Reliability Physics Symposium, Apr 2008, pp. 566-574. PDF

[Biosensors]  “Dimensionally Frustrated Diffusion Towards a Fractal Aborber,” P. Nair  and M. Alam, Physical Review Letters, 99, 256101, 2007. 

[Nanonets] “Limits of Performance Gain of Aligned CNT over Randomized Network: Theoretical Predictions and Experimental Validation,” N. Pimparkar, C. Kocabas, S. J. Kang, J. Rogers and M. A. Alam, Electron Device Letters, 28(7), pp. 593-595, July 2007. PDF 

[Biosensors] “Design Considerations of Nanowire Biosensors”, P. Nair and M. Alam, IEEE Transaction on Electron Devices, 2007. 54(12), pp. 3400-3408.

[Transistors] “Simulation of Carbon Nanotube FETs including Hot-Phonon and Self-Heating Effects,” Sayed Hasan, M. A. Alam and M. S. Lundstrom, IEEE Transaction on Electron Devices, Special Issue on Modeling and Simulation, 54(9), pp. 2352-2361, 2207.

[Transistors] “Scaling Limits of Double-Gate and Surround Gate Z-RAM Cells,” N. Butt and M. A. Alam, , IEEE Transaction on Electron Devices, Special Issue on Modeling and Simulation, 54(9), pp. 2255-2262, 2007.

[Reliability] “Soft Error Trends and New Physical Model for Ionizing Dose Effects in Double Gate Z-RAM Cell,” N. Butt and M. A. Alam, IEEE Trans. on Nuclear Science, 54(6), pp. 2363-2370, 2007. 

[Reliability] “Recent Issues in Negative-Bias Temperature Instability: Initial Degradation, Field Dependence of Interface Trap Generation, Hole Trapping Effects, and Relaxation,” (Invited paper) A. E. Islam, H. Kufluoglu, D. Varghese, S. Mahapatra, and M. A. Alam, IEEE Transaction on Electron Devices, Special Issue on Modeling and Simulation, 54(9), pp. 2143-2154, 2007.

[Reliability] “Off state Degradation in Drain Extended NMOS Transistors: Interface Damage and Correlation to Dielectric Breakdown,” D. Varghese, H. Kufluoglu, V. Reddy, H. Shichijo, S. Krishnan and M. A. Alam, IEEE Trans. Electron Devices, 54(10), pp. 2669-2678,  2007. 

“Experimental and Theoretical Studies of Transport through Large Scale, Partially Aligned Arrays of Single Walled Carbon Nanotubes in Thin Film Type Transistors”,  C. Kocabas, N. Pimparkar, O. Yesilyurt , M. A. Alam and J.A. Rogers, Nanoletters, Web Release Date: 30-Mar-2007; DOI: 10.1021/nl062907m, 2007. 

“High Performance Electronics Based on Dense, Perfectly Aligned Arrays of Single Walled Carbon Nanotubes”,  Seong Jun Kang, Coskun Kocabas, Taner Ozel, Moonsub Shim, Ninad Pimparkar, Muhammad A. Alam8, Slava Rotkin9 John A. Rogers, Nature Nanotechnology, Published online: 25 March 2007 | doi:10.1038/nnano.2007.77.  

“Current-Voltage Characteristics of Long-Channel Nanobundle Thin-Film Transistors: A Bottom-Up Perspective”, N. Pimparkar, Q. Cao, S. Kumar, J. Murthy, J. Rogers, and M. Alam, Electron Devices Letters, 28(2), pp. 157-160, Jan. 2007.

“A Generalized Reaction-Diffusion Model With Explicit H-H2 Dynamics for Negative Bias Temperature Instability Degradation” H. Kufluoglu and M. Alam, IEEE Trans. Electron Devices, 54(5), pp. 1101-1107, 2007.  

“Impact of Negative Bias Temperature Instability in Nano-Scale SRAM Array: Modeling and Analysis,” K. Kang, K. Roy, H. Kufluoglu and M. A. Alam, IEEE Transactions on Computer-Aided Design of Integrated Circuits and System, 26(10), 1770-1781,  2007.

“N-type Field-effect Transistors using Multiple Mg-doped ZnO Nanorods”,  Sanghyun Ju, Jianye Li, Ninad Pimparkar , Muhammad A. Alam, R.P.H. Chang and David B. Janes, IEEE Transaction on Nanotechnology,  2007. 

[Nanonets] “Effect of Percolation on Thermal Transport in Nanotube Composites,” S. Kumar, M. Alam, and J. Murthy, Applied Physics Letters, 90(10), 104105,  2007. 

 “A Critical Analysis of short-term NBTI measurements: Explaining the effect of time-zero delay for On-the-Fly Measurements”, A. E. Islam, H. Kufluoglu, D. Varghese, M. Alam, Applied Physics Letter, 90,  083505, 2007.

 “Sub-Bandgap Impact Ionization and Excitation in Carbon Nanotube Transistors" , J. Guo, M. Alam, and Y. Ouyang, Journal of Applied Physics, 2007.

“Performance Assessment of Sub-Percolating Nanobundle Network Thin Film Transistors by an Analytical Model” by N. Pimparkar, J. Guo, and M.A. Alam, Transaction on Electron Devices,  54(4), 2007. 

“Negative Bias Temperature Instability: Estimation and Design for Improved Reliability of Nanoscale Circuits,” B. C. Paul, K. Kang, H. Kufluoglu, M. A. Alam, K. Roy,  IEEE Transactions on Computer-Aided Design of Integrated Circuits and System, 26(4), 743-751,  April 2007.

“Computational Model for Transport in Nanotube-Based Composites with Applications to Flexible Electronics”, S. Kumar, J. Murthy, and M. Alam, Journal of Heat Transfer, 129(4), pp. 500-508, 2007.

“Electrical and Thermal Transport in Thin-Film Nanotube Composites with Applications to Macroelectronics”, S. Kumar, M. Alam, and J. Murthy, Journal of Nanomanufacturing, 2007. 

“A Bottom-up Redifinition for Mobility and Effect of Poor Tube-Tube Contact on Performance of CNT-TFT" N. Pimparkar and M. Alam, Device Research Conference, South Bend, June 18-20, 2007. PDF

“Estimation of Statistical Variation in Temporal NBTI Degradation and its Impact in Lifetime Circuit Performance,”, K. Kang, S. P. Park,M. A. Alam, and K. Roy, Proc. of 2007 International Conference on Computer Aided Design (ICCCAD), (Finalists for the IEEE/ACM William J. McCalla ICCAD Best Paper Award), Nov. 2007. PDF

“Interface Damage as a Predictor for Gate Dielectric Breakdown during Off-State Stress of Drain Extended NMOS Transistors,” D. Varghese, H. Kufluoglu, V. Reddy, S. Krishnan, M. Alam, International Electron Devices Meeting (IEDM), Washington DC, USA, Dec 2007. PDF

“Theory and Practice of Ultra-fast Measurements for NBTI Degradation: Challenges and Opportunities”, A.E. Islam, E. N. Kumar, H. Das, S. Purawat, V. Maheta, H. Aono, E. Murakami, S. Mahapatra, and M.A. Alam, International Electron Devices Meeting (IEDM), Washington DC, USA, Dec 2007. PDF

“Multi-probe Two-Dimensional Mapping of Off-State Degradation in DeNMOS Transistors: How and Why Interface Damage Predicts Gate Dielectric Breakdown,” D. Varghese, H. Kufluoglu, V. Reddy, H. Shichijo, D. Mosher, S. Krishnan, M. Alam, International Electron Devices Meeting (IEDM), Washington DC, USA, Dec 2007. PDF

 “Material Dependence of NBTI Physical Mechanism in Silicon Oxynitride (SiON) p-MOSFETs: A Comprehensive Study by Ultra-Fast On-The-Fly (UF-OTF) IDLIN Technique,” E. N. Kumar, V. D. Maheta, S. Purawat, A. E. Islam, C. Olsen, K. Ahmed, M. A. Alam and S. Mahapatra,  International Electron Devices Meeting (IEDM), Washington DC, USA, Dec 2007.  PDF

 “Characterization and Estimation of Circuit Reliability Degradation under NBTI using On-Line Iddq Measurement,” K. Kang, K. Kim, A. E. Islam, M. Alam, and K. Roy, Design Automation Conference, June 2007, pp. 358-363 (Nominated for best paper Award). PDF

“Estimation of NBTI Degradation Using On-Chip Iddq Measurement,” K. Kang, M. Alam, K. Roy, Proceedings of International Reliability Physics Symposium, April 2007, pp. 10-16. PDF

“Selective Heating Characterization of Nanoplate Devices for Sensing Applications,” “O.H. Elibol, B. Reddy, Jr. , P.R. Nair, M.A. Alam ,D.E. Bergstrom and R. Bashir, NSTI Nanotech Conference, Santa Clara, CA, May 20-24,  2007.

 “On The Physical Mechanism of NBTI In Silicon Oxynitride P-MOSFETs: Can Differences In Insulator Processing Conditions Resolve The Interface Trap Generation vs. Hole Trapping Controversy?—S. Mahapatra, K. Ahmed, D. Varghese, A.E. Islam, G. Gupta, L. Madhav, D. Saha, and M.A. Alam, Proceedings of International Reliability Physics Symposium, paper 1.1, 2007.  PDF

“Prediction of Five-fold Increase in Current Gain of Optimally Aligned CNT Network over Random Networks”, Ninad Pimparkar, Coskun Kocabas, Seong Jun Kang, John Rogers and Muhammad Ashraful Alam, Proc. of MRS Spring Meeting, 2007.  PDF

"Theory of Nanocomposite Network Transistors”, (Invited paper) M. Alam, N. Pimparkar, S. Kumar, J. Murthy, MRS Bulletin, 31(6), 923, 2006. 

“Performance limits of Nano-Biosensors”, P. R. Nair and M. A. Alam, Applied Physics Letters, 88,  233120, 2006 (Also profiled in Virtual Journal of Nanoscale Science and Technology and Virtual Journal of Biological Physics Research: Both publishers of Selected Papers from all other print journal). 

“Anomalous Resonance in a Nanomechanical Biosensor”,  A. Gupta, P. Nair, D. Akin, M. Ladishch, S. Broyles, M. Alam, and R. Bashir, Proc. of National Academy of Sciences, 103(36), 13362, 2006. 

"Theoretical Investigation on Photoconductivity of Single Intrinsic Carbon Nanotubes", Y.-K. Yoon, M. Alam, J. Guo, Applied Physics Letters, 88, 133111, 2006. 

"Theory of Transfer Characteristics of Nanotube Network Transistors," S. Kumar, N. Pimparkar, J. Y. Murthy, and M. A. Alam, Applied Physics Letters, 88, 123505, 2006. 

“A Comprehensive Model for PMOS NBTI Degradation: Recent Progress (Invited paper)”,  M. Alam, H. Kufluoglu, D. Varghese, S. Mahapatra, Microelectronics Reliability, 47(6), 2007. pp. 853-862.doi:10.1016/j.microrel.2006.10.012, Dec. 2006. 

“A Theory of Interface Trap Induced NBTI Degradation for Reduced Cross-section MOSFETs,” H. Kufluoglu and M. A. Alam,  IEEE Transaction on Electron Devices, 53(5), 1120-1130, 2006.

“A Computational Study of Carbon Nanotube Optoelectronic Devices” Y. Yoon, Y. Ouyang, M. Alam, and J. Guo, Proc. Optics East,  p. 1-12,  2006.

“Simulation of Carbon Nanotube FETs Including Hot-Phonon and Self-Heating Effects”  S. Hasan, M. Alam, M. Lundstrom, IEDM Technical Digest, paper 31.4, 2006. PDF 

 “Gate Leakage vs. NBTI for Plasma Nitrided Oxides: Characterization, Physical Principles and Optimization”, A. E. Islam, G. Gupta, S. Mahapatra, A. T. Krishnan, K. Ahmed, F. Nouri, and M. A. Alam, IEDM Tech. Digest, pp. 12.4.1, December 2006. PDF 

“Universality of Off-Degradation in Drain Extended NMOS Transistors”, D. Varghese, H. Kufluoglu, V. Reddy, H. Shichijo, S. Krishnan, and M. Alam . IEDM Technical Digest, paper. 29.3, 2006. PDF

“Scaling Limits of 1T-OC DRAM Cells,”  N. Butt and M. Alam, Proc. of SIDPAD, 2006.

"Theoretical Model for Nanobundle Network Transistors," N. Pimparkar, J. Guo, M. A. Alam, Proc. of NSTI Nanotechnology Conference, May 7-11, 2006, Boston, MA, 2006. PDF

“Temporal Parametric Yield Model of Nano-Scale SRAM Array under Negative Bias Temperature Instability," K. Kang, H. Kufluoglu, M. A. Alam and K. Roy, Proc. of SRC Student Symposium, 2006.

"Temporal Performance Degradation under NBTI: Estimation and Design for Improved Reliability of Nanoscale Circuits,“ . B. Paul, K. Kang, H. Kufluoglu, M. A. Alam and K. Roy, Proc. of Design Automation and Test in Europe, pp. 780-785, March 2006. PDF

“A Review of New Characterization Methodologies for TDDB and NBTI”, M. A. Alam,  Proc. of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, 2006.

“Efficient Transistor-Level Sizing Technique under Temporal Performance Degradation due to NBTI,” K. Kang, H. Kufluoglu, M. A. Alam and K. Roy, Proc. of IEEE International Conference on Computer Design, October 2006, pp. 216-221. PDF

”Percolating Conduction in Finite Nanotube Networks”, S. Kumar, J. Murthy, and M. Alam,  Physical Review Letters, 95(6), 066802, 2005

“High-Frequency Performance Projections for Ballistic Carbon Nanotube Transistors”, S. Hasan, S. Salahuddin, M. Vaidyanathan, and M. A. Alam, IEEE Trans. on Nanotechnology, 6, p. 2007, 2005. 

“Macroelectronics: Perspective on Technology and Applications” (Invited paper) R. H. Reuss, B. R. Chalamala, A. Moussessian, M. G. Kane, A. Kumar, D. C. Zhang, J. A. Rogers, M. Hatalis, D. Temple, G. Moddel, B. J. Eliasson, M. J. Estes, J. Kunz, E. Handy, E. S. Harmon, D. B. Salzman, J. M. Woodall, M. Ashraf Alam, J. Murthi, S. C. Jacobson, M. Olivier, D. Markus, P. M. Cambell, and Eric Snow, Proceedings of IEEE, Special Issue on Flexible Electronics, 93(7), pp. 1239-1256, 2005. 

“Carrier Transport and Light-Spot Movement in Carbon-Nanotube Infrared Emitters”, J. Guo and M. Alam,  Applied Physics Letters, 86, 023105,  2005. 

 “Negative bias temperature instability in CMOS devices (Invited paper)”, S. Mahapatra, M. A. Alam, P. Bharath Kumar, T. R. Dalei, D. Varghese and D. Saha, Microelectronics Engineering, Special issue on INFOS, 80, 114-121, 2005.

 “Energy Dependent Interface Trap Generation in MOSFET Si/SiO2 Interface,” D. Varghese, S. Mahapatra and M. A. Alam, IEEE Electron Device Letters, 26(8), 572-574, 2005.

 “A Computational Model of NBTI and Hot Carrier Injection Time-Exponents for MOSFET Reliability,”  Journal of Computational Electronics, H. Kufluoglu and M. A. Alam,  3(3), p. 165-169, 2005.

''Impact of NBTI on the Temporal Performance Degradation of Digital Circuits,'' B. C. Paul, K.-H. Kang, H. Kufluoglu, M. A. Alam and K. Roy, IEEE Electron Device Letters, 26(8), pp. 560-562, 2005.

[Reliability] “Gate Dielectric Breakdown in the Time-Scale of ESD Breakdown,” (Introductory Invited Paper),  B. Weir, C. Leung, P. Silverman, and M. Alam, Microelectronics Reliability, 45, pp. 427-436, 2005.

“Comment on “Analysis of Hydroxyl Group Controlled Atomic Layer Deposition of Hafnium Oxide From Hafnium Tetracloride and Water”, M. Alam and M. Green,  Journal of Applied Physics, 98, 016101, 2005. 

[Reliability] “A Computational Model of NBTI and Hot Carrier Injection Time-Exponents for MOSFET Reliability,”  H. Kufluoglu and M. A. Alam, Journal of Computational Electronics, 3(3), pp.165-169, 2005.

“Thermal Transport in Nanotube Composites for Large-Area Macroelectronics,” Kumar S., Murthy, J., and Alam, M. A,  Proceedings of NHTC, ASME Summer Heat Transfer conference, July 17-22, 2005, San Francisco, California, USA.

“Simulation of Electronic Detection of DNA using Si-NW sensors,” P. R. Nair and M. A. Alam, Proc. of Electronic Recognition of Bio-Molecules-2, 2005.

"Performance Assessment of Sub-Percolating Nanobundle Network Transistors by an Analytical Model," N. Pimparkar, J. Guo, and M. A. Alam, IEDM Tech. Digest, vol. 21.5, pp. 541, 2005. PDF

“On The Dispersive versus Arrhenius Temperature Activation of NBTI Time Evolution in Plasma Nitrided Gate Oxides: Measurements, Theory, and Implications,”  D. Varghese, D. Saha, S. Mahapatra, K. Ahmed, F. Nouri and M. Alam, Proceeding of International Electron Device Meeting, 2005. PDF

"On Quasi-Saturation of Negative Bias Temperature Degradation," Proc. of 208th Meeting of The Electrochemical Society (ECS),  M. A. Alam and H. Kufluoglu,  October, 2005. PDF

“On Reliable Circuits and Systems: How Reliability Considerations Are Reshaping Oxide Scaling, Device Geometry, and VLSI Algorithm,”  M. A. Alam, H. Kufluoglu, B. Paul, K. Kang and K. Roy,  Proceedings of ICICDT, 2005. PDF

“Computational Modeling of Negative Bias Temperature Instability for Reliability-Aware VLSI Design,“ H. Kufluoglu, M. A. Alam, B. C. Paul, K. Kang, K. Roy Semiconductor Research Corporation (SRC) TECHCON Meeting, October 2005. PDF

“Theory of Current-Ratio Method for Oxide Reliability: Proposal and Validation of a New Class of Two-Dimensional Breakdown-Spot Characterization Techniques,” M. Alam, D. Monroe, B. Weir, and P. Silverman, Proceedings of International Electron Device Meeting, 2005. PDF

[Biosensors] “DNA Mediated Fluctuations in Ionic Current through Silicon Oxide Nano-Channels”, R. Bashir, H. Chang, F. Kosari, G. Andreakakis, M. A. Alam, G. Vasmatzis,  Nano Letters,  4(8), pp. 1551-1556, 2004. 

[Reliability] “A Comprehensive Model of PMOS Negative Bias Temperature Degradation,” (Invited paper) M. A. Alam and S. Mahapatra,  Special issue of Microelectronics Reliability, volume 45, number 1, pp. 71-81, 2004. 

[Reliability] "Investigation and Modeling of Bulk and Interface Trap Generation During Negative Bias Temperature Instability in PMOSFETS,"  M. A. Alam and S. Mahapatra, IEEE Trans. on Electron Devices , 51(9), pp. 1371-1379, 2004. 

“Simulation of Thermal Transport in Nano-wire Composites for Macro-Electronics Applications,” Kumar S., Murthy, J., and Alam, M. A., Proceedings of Integrated Nanosystems, ASME Conference, , Pasadena, California, USA, September 22-24, 2004

“Monte-Carlo Simulation of Carbon Nanotube Devices”, S. Hasan J. Guo, M. Vaidyanathan, M. A. Alam, and M. Lundstrom,  Proc. of International Workshop on Computational Electronics, West Lafayette, IN, Oct. 25-27, 2004.

“A Geometrical Unification of The Theories of NBTI and HCI Time-Exponents and Its Implications for Ultra-scaled Planar and Surround-Gate Geometries,” H. Kufluoglu and M. A. Alam,  IEEE International Electron Devices Meeting Proceedings, pp. 113-116, December 2004. PDF

“A Unified Modeling of NBTI and Hot Carrier Injection for MOSFET Reliability,” H. Kufluoglu and M. A. Alam, IEEE International Workshop on Computational Electronics-10 Extended Abstracts, pp. 28-29, 2004.  PDF

 “Mechanism of Negative Bias Temperature Instability in CMOS Devices: Degradation, Recovery, and Impact of Nitrogen,” S. Mahapatra, M. Alam, P. Bharath Kumar, T. R. Dalei, and S. Saha, Proc. of  IEDM, 2004.

“Gate dielectric breakdown: a focus on ESD protection,” B. E. Weir, C.-C. Leung, P. J. Silverman, and M. Alam,  Proc. of IRPS, pp. 399-404, 2004.

“Methodology for accurate assessment of soft-broken gate oxide leakage and the reliability of VLSI circuits,” P. M. Mason, A. J. La Duca, C. H. Holder, D. K. Hwang, and M. Alam,  Proc. of IRPS, pp. 430-434, 2004.

[Crystal Growth] “A Mathematical Description of  Atomic Layer Deposition, and its Application to the Nucleation and Growth of High-k Gate Dielectrics,”  M. A. Alam and M. L. Green,  Journal of Applied Physics,  vol. 94(5),  pp. 3403-3413, 2003. 

[Reliability] “Uncorrelated Breakdown of Silicon Integrated Circuits,”   M. A. Alam, R. K. Smith, B. E. Weir, and P. J. Silverman, Nature,  6914,  p. 378,  2002.

[Reliability] “A Future of Function or Failure?”  M. A. Alam, Bonnie E. Weir, and P. Silverman,  IEEE Circuits and Devices - The Electronics and Photonics Magazine ( Invited paper ), 18(2),  pp. 42-48, 2002.

[Reliability] “SILC as a Measure of Trap Generation and Predictor of TBD in Ultrathin Oxides”,  M. A. Alam, IEEE Transaction on Electron Devices, 49 (2),  pp. 226-231, 2002.

[Reliability] “A Study of Soft and Hard Breakdown (part I): The Statistical Model,”  M. A. Alam, B. E. Weir, and P. J. Silverman,  IEEE Transaction on Electron Devices, 49 (2),  pp. 232-238, 2002.

[Reliability] “A Study of Soft and Hard Breakdown (part II): Principles of Area, Thickness, and Voltage Scaling,” M. A. Alam, B. E. Weir, and P. J. Silverman, IEEE Transaction on Electron Devices, 49 (2), pp. 239-246, 2002.

[Reliability] “Photo-emission Study of Zr- and Hf- Silicates for use as High-k Oxides: role of second neighbors and interface charge,”  R. L. Opila, G. D. Wilk, M. A. Alam,  Applied Physics Letters, 81 (10),  pp. 1788-90,  2002.

[Optoelectronics] “Role of Carrier Capture in Microscopic Simulation of Multi-Quantum-Well Semiconductor Laser Diodes,” M. S. Hybertsen, B. Witzigmann, M. A. Alam, and R. K. Smith, Journal of Computational Electronics, 1: pp. 113-118, 2002. 

[Reliability]  “A Computational Model for Oxide Breakdown - Theory and Experiment,” M. A. Alam, B. E. Weir, J. D. Bude, P. Silverman, and A. Ghetti,  (Invited paper),  Microelectronics Engineering, pp. 137-147, 2001.

[Reliability] “Soft Breakdown at All Positions Along the NMOSFET Channel,”  B. E. Weir, M. A. Alam, P. J.   Silverman, Microelectronics Engineering, 59 (1-4), pp. 17-23, 2001.

[Reliability] “Gate Oxide Reliability Projection to the Sub-2nm Regime,”  B. E. Weir, M. A. Alam, J. D. Bude, P. J. Silverman, A. Ghetti, F. Baumann, P. Diodato, D. Monroe, T. Sorsch, G. Timp, Y. Ma, M. M. Brown, A. Hamad, D. Hwang, P. Mason,  Semiconductor Science and Technology, 15, pp. 455-461, 2000. 

[Reliability] “Ultra-thin Gate Oxide Reliability Projections,”  B. E. Weir, M. A. Alam, P.J. Silverman, F. Baumann, D. Monroe, J. D. Bude, G. L. Timp, A. Hamad, Y. Ma, M. M. Brown, D. Hwang, T.W. Sorsch, A. Ghetti,  and  G. D. Wilk, Solid State Electronics,  46 (3), pp. 321-328, 2000. 

[Reliability] “Anode Hole Generation Mechanisms,” (Invited paper) A. Ghetti,  M. A. Alam, and J.  Bude,   Microelectronics Reliability, 41(9), pp. 1347-1354, 2001.

[Reliability] “Simulation of Semiconductor Quantum Well Lasers,”  M.  A. Alam, M. Hybertsen, R. K. Smith, G. A. Baraff,  Special issue of IEEE Transaction of Electron Devices (Invited paper),   47 (10), pp. 1917-1925, 2000.

[Reliability] “Multi-Wavelength DFB Laser Array with Integrated Spot Size Converters,” L. J. P. Ketelsen, J. Grenko, S. Sputz, M. Focht, J. Vandenberg, J. E. Johnson, C. Reynolds, J. Geary, J. Levkoff, K. Glogovsky, D. Stampone, S. N. G. Chu, F. Walters, J.  Lentz, M. A. Alam, R. People, M. S. Hybertsen, R. Leibenguth, G. Przybylek, L. Zhang,  Journal of Quantum Electronics, 36(6), pp. 641-648, 2000.

[Reliability] “Monolithically Integrated Semiconductor Optical Amplifer and Electro-Absorption Modulator with Dual Waveguide Spot-size Converter,”  J. Johnson, L. Ketelsen, J. Grenko, S. Sputz, J. Wandenberg, M. Focht, C. Reynolds, R. People and  M. Alam,   Selected Topics in Quantum Electronics, 6(1), pp. 19-25, 2000.

“Modeling of Photoluminescence in the Multi-Quantum Well Laser Heterostructures,” A. Grinberg, M. A. Alam, S.K. Sputz,  IEEE J. of Quantum Electronics, 35(1), pp. 84-92, 1999. 

“Role of p-doping Profile and Regrowth on the Static Characteristics of 1.3 um MQW InGaAsP-InP Lasers: Experiment  and Modeling,”   G.L. Belenky,  C.L. Reynolds,  D.V. Donetsky,  G.E. Shtengel, M.S. Hybertsen, M. A. Alam,  G. A. Baraff, R.K.  Smith, R. F. Kazarinov, J. Winn,  L.E. Smith, Journal of Quantum Electronics, 35(10),  pp. 1515-1520, 1999. 

“Simulation and Characterization  of Selective Area MOCVD Process,”  M. A. Alam, R. People, S.K. Sputz, D. Lang, J.E. Johnson, S. Chu, T. Perbell, M. Hybertsen, J. Vandenberg, K. Evans-Lutterodt, E. Isaacs, L. Gruezke, M. Marcus,  Applied Physics Letters, 74, p. 1617,  1999.

 “Synchrotron X-Ray Micro-Diffraction Diagnostics of Multilayer Optoelectronic Devices,”  Z-H. Coi, E. Isaacs, K. Evans-Lutterodt, J. Grevko, R. Blew, S. Sputz, J. M.  Vandenberg, R. People, M. Alam, M. Hybertsen, L. Ketelsen, Applied Physics Letters, 75, p. 100, 1999. 

“Effect of Carrier Transport on the L-I Characteristics of Quantum Well Lasers in the presence of Spatial Hole Burning,”  M. A. Alam,   IEEE J. of Quantum Electronics, 33, pp. 1018-1024, 1997.

“Effects of Carrier Heating on Laser Dynamics – A Monte Carlo Study,” M.  A. Alam and M.S. Lundstrom,  IEEE Journal of Quantum Electronics, 33, pp. 2209-2220, 1997. 

 “A Two Dimensional Simulation of Organic Transistors,'' M. A. Alam,  A. Dodabalapur, and M. Pinto,  Transaction on Electron Devices Special Issue on Organic and Polymeric Devices,  44. pp. 1332-1337, 1997.

“Influence of Quasi-Ballistic Base Transport on the  Small Signal Y-Parameters of Si Bipolar Transistors,”  M. A. Alam, M. Schroter, Mark S. Lundstrom, IEEE Electron  Device Letters, 17 (4), pp. 184-186, 1996.

“A Transition Matrix Approach for Monte Carlo Simulation of Coupled Electron/Phonon/Photon Dynamics,”  M. A. Alam and M.S.  Lundstrom,  Applied Physics Letters, 67 (4), pp. 512-514, 1995.

“ A Small Signal, One flux Model for Short Base Transport,”  M.  A. Alam, S. Tanaka, and M.S. Lundstrom, Solid State Electronics, 38, pp. 177-182, 1995.

“Simple Analysis of Carrier Transport and Build-Up in Separate Confinement Heterostructure Quantum Well Lasers,” M. A. Alam and M.S. Lundstrom, IEEE Photonics Technology Letters, 6 (12), pp. 1418-1420, 1994.

“Simulation of AlGaAs/GaAs HBTs by Scattering Matrix Solution to the Boltzmann Equation,”  M. A. Alam and M.S. Lundstrom, Semiconductor Science and Technology, 9, pp. 862-864, 1994.

“Scattering Matrix Formulation of Electron Transport in Compound Semiconductor Devices,”  M. A. Alam and M.S. Lundstrom, Solid State Electronics, 37 (8), pp. 1509-1520, 1994.

“A Critical Examination of the Assumptions Underlying Macroscopic Transport Equations for Silicon devices,”   M.A. Stettler, M.A. Alam and M. Lundstrom,,  IEEE Transaction on Electron Devices, 40 (4), pp. 733-740, 1993.

“ Formulation of Boltzmann Equation in terms of Scattering Matrices,”  M. A. Alam,  M.A. Stettler and M.S. Lundstrom,  Solid State Electronics, 36, pp. 263-271, 1993.

“ Spectral Flux Method to Solve Boltzmann Equation,”  M.A. Alam, M.A. Stettler and M.S. Lundstrom,  Journal of Applied Physics, 73 (10), pp. 4998-5003, 1993.

“A Self-consistent Analysis in presence of Phase-randomizing Processes for Double-barrier Structures,”  M. A. Alam, R.A. Morrisey and A.N. Khondker, Journal of  Applied  Physics, 71, pp. 3077-3090, (1992).

“On Density of States, Electron Transport Mechanisms and Chemical Potentials in Mesoscopic system,”  A.N. Khondker and M. A. Alam,  Physical Review B15, 45, pp. 8516-8525, 1992.

“Influence  of Phase-breaking processes on Shot Noise in Resonant Tunneling Devices,” M. A. Alam and A.N. Khondker, IEEE Transaction on Electron Devices, 39, pp. 2184-2186, 1992.

“Are there extra scattering mechanism in the Well of a resonant-tunneling diode?” R. A. Morrisey, M. A. Alam  and A.N. Khondker, Physica B, 182, pp 61-63, 1992.

“Landauer-Buttiker Conductance Formulas in Presence of Inelastic Scattering,”  A.N. Khondker and M. A. Alam,  Physical Review B15, 44, pp. 5444-5452, 1991.

“Application of Quantum Mechanical Wave Impedance in the Solution of Schroedinger's Equation in Quantum  Well,”  S.M.F. Kabir, M.R. Khan, M. A. Alam, Solid State Electronics, 34, pp. 1466-1468, 1991.

“An Efficient Self-consistent Model for Resonant Tunneling Structures,”  M. A. Alam and A.N. Khondker,  Journal of  Applied Physics, 68, pp. 6501-6503, 1990

“A Phenomenological Theory of Correlated Multiple Soft Breakdown Events in Ultrathin Gate Dielectrics  (Best Paper Award)”, M. Alam and R. K. Smith, Proc. of International Reliability Physics Symposium, pp. 406-411, 2003. PDF

“A Critical Examination of the Mechanics of Dynamic NBTI for PMOSFETs ,”   M. A. Alam,  IEDM Technical Meeting, pp. 345-348, (2003).

“A New Observation of Bias-Temperature Instability in Thin Gate Oxide p-MOSFETs,”  S. Mahapatra, P. B.  Kumar, and M. A. Alam,   IEDM Technical Meeting, pp. 337-340, (200

“A New Model for Atomic Layer Deposition, and its Application to the Nucleation and Growth of HfO2 Gate Dielectric Layers,”  M. A. Alam and M. L. Green, Proc. of the ALD Conference, Extended Abstract No. 3.2,  (2003).

1999-2002

“Effect of 2nd nearest-neighbors and interface charge on core level shifts in Zr, Hf-Silicates,”  G.W. Wilk, M. A. Alam,  B.W. Busch, and R.L. Opila,  Proc. 33rd IEEE Semiconductor Interface Specialists Conference,  paper 2.2 (2002).

“Statistically Independent Soft-Breakdowns Redefine Oxide Reliability Specifications,”  M. A. Alam, R.K. Smith, B.E. Weir, and P.J. Silverman, IEDM Technical Digest, pp. 151-154, (2002). PDF

“A Predictive Reliability Model for PMOS Bias Temperature Degradation,”  S. Mahapatra and M.A. Alam, IEDM Technical Digest, pp. 505-508,  (2002).

 “Prospects of Using Thin oxides  for Silicon Nanotransistors,”  M. A. Alam, B. E. Weir, and P.J. Silverman, in Proc. International Workshop on Gate Insulators,  pp. 30-34,  (2002). 

 “Low Voltage Gate Dielectric Reliability,”  B. Weir, M. Alam, P. Silverman, and Y. Ma,  in ECS Proc. of the ninth international symposium on silicon materials, science, and technology, eds. H.R. Huff, L. Fabry, S. Kishino,  vol. 2, pp. 465-474,  (2002).  

“A Mathematical Description of ALD HfO2 Nucleation and Growth Behavior,”  M. A. Alam and M. L. Green, and W. Vandervorst,  SEMATECH Meeting on advanced gate dielectrics, Oct. 16, (2002).

“A New Analytical Model for High Frequency MOSFET Noise,”  S. Donati, F. Bonani, G. Ghione, M. A. Alam, Proceeding of   the Circuits and System Conference, pp. 389-392, (2001).

“Can an Accurate Anode Hole Injection Model Resolve the E vs. 1/E controversy ?” [Outstanding Paper Award] M. A. Alam, Jeff Bude, and A. Ghetti,  Proceedings of International Reliability Physics Symposium, pp. 21-26,  (2000).

 “Physics and Prospects of sub-2nm Oxides,” M. A. Alam, B. Weir, P. Silverman, J. Bude, A. Ghetti, Y. Ma,  M. Brown, D. Hwang, and A. Hamad,  Proceedings of 4-th International Symposium on the Physics and Chemistry of SiO2 and Si-SiO2 interfaces,  pp. 365-373,  (2000).

 “The Statistical Distribution of Percolation Resistance as a Probe into the Mechanics of Ultra-Thin Oxide Breakdown,”  M. A. Alam, B. Weir, P. Silverman, Y. Ma, D. Hwang,  IEDM Technical Digest,  pp. 529-532, (2000).

“Native and Stress-Induced Traps in SiO2 Films,”   A. Ghetti, M. Alam, J. Bude, E. Sangiorgi, G. Timp, G. Weber,  Proceedings of 4th Symposium on the Physics and Chemistry of SiO2 and the SiO2 Interface,  p. 419,  (2000).

“Critical Microscopic Processes in Semiconductor Lasers,” M. A. Alam, M. Hybertsen, G. Baraff, and R. K. Smith,  in Proceedings of MRS Fall Meeting,  vol. 579, “The Optical Properties of Materials,” Eds. E.L. Shirley, J.R. Chelikowsky, S. G. Louie, and G. Martinez (Warrendata, MRS, 2000)  pp. 181-192.

“Simulation of Carrier Dynamics in Multi-Quantum Well Lasers,”  M. Hybertsen, M.A. Alam, G. Baraff, R. Smith, G. Shtengel, C. Reynolds, G. Belenky, in Physics and Simulation of Optoelectronic Devices VIII  SPIE Proceedings, vol. 3944, pp. 486-491, (2000).

“Automatic Generation of Equivalent Circuits from Device Simulation,”  A. Pacelli, M. Alam, M. Mastrapasqua, and S. Luryi, Conference on Modeling an Simulation of Microsystems, San Diego, CA, March 27-29, (2000).

“Spot-Size-Converted 1.3mm Directly-Modulated Fabry-Perot and DistributedFeedback Lasers Suitable for Passive Alignment and 2.5 Gb/s Operation at 85C,”   C. Klotzkin, J. Eng, G. Ford,Erick Michel, S. Alexander,M. Alam, M. Hybertsen, L. Ketelsen, J. Freund, D. Stampone, L. Reynolds,  IEDM Proceedings, (2000).

“ Ultra-thin Oxide Reliability Projections and Alternate Dielectrics,”  B. Weir, G. Wilk, M. Alam, and P. Silverman,  Proceedings of the 1st European Workshop on Ultimate Integration of  Silicon,  p. 65,  (2000). 

“Gate Oxides in 50nm Devices:  Thickness Uniformity Improves Projected Reliability,”  B. E. Weir, P. J. Silverman, M.  A. Alam, A. Hamad, F. D. Baumann, G. Timp, A. Ghetti, Y. Ma, M. Brown, and T. Sorsch,  IEDM Technical Digest ,  pp. 437-440, (1999).

“Explanation of Soft and Hard Breakdown and its Consequences for Area-Scaling,”  M. A. Alam, B. E. Weir, J. D. Bude, P. J. Silverman, D.  Monroe,  IEDM Technical Digest, pp. 449-452,  (1999).

“An Anode Hole Injection Percolation Model for Oxide Breakdown - The Doom's Day Scenario Revisited,”  M. A. Alam, J. Bude, B. Weir, P. Silverman, A. Ghetti, D. Monroe, K. Cheung, and S. Moccio, IEDM Technical Digest,  pp. 715-718,  (1999).

“Analysis of trap-assisted conduction mechanism through silicon dioxide films using quantum yield,”  A. Ghetti, M. A. Alam, J. Bude, D. Monroe, E. Sangiorgi, and H. Vaidya,  IEDM Technical Digest, pp. 723-726,   (1999).

“Process Simulation of Selective Area MOCVD Growth for Optoelectronic Integrated Circuits,” M. A. Alam, R. People, and M. S. Hybertsen,  SPIE Proceedings on Physics and Simulation of Optoelectronic Devices, vol. 3625,  pp. 440-447, (1999).

“Role of p-doping Profile in InGaAsP Multi-Quantum Well Lasers:  Comparison of Simulation and Experiment,”  M. Hybertsen, M. A. Alam, G. Shtengel, G. Belenky, C. Reynolds, R. K. Smith, G.  Baraff, R. Kazarinov, J. Wynn, L. E. Smith,   SPIE Conference Proceedings, vol. 3625, p. 524, (1999).

“Role of Doping Profile on Semiconductor Laser Performance: simulation and  experiment,”  Hybertsen, M.S.; Alam, M.A.; Baraff, G.A.; Smith, R.K.; Belenky, G.L.; Donetsky, D.V.; Shtengel, G.E.; Reynolds, C.L., Jr.; Kazarinov, R.F.  in Proc. of Conference on Lasers and Electro-Optics,  pp. 309 –310, 1999.

“Microscopic Simulation of Optical Gain in Multi Quantum Well Lasers,”   M. Hybertsen, M. Alam, G. Baraff, K. Smith, G. Schtengel, C. Reynolds, R. Kazarnov, G. Belinky,   in Proc. IEEE Lasers and Electro-Optics Society 12th Annual Meeting, vol. 2, pp. 657-658 (1999).

“Trap-Assisted Tunneling as a mechanism of Degradation  and Noise in 2-5 nm Oxides,”  G. A. Alers, B. E. Weir, M. A. Alam, G. L. Timp, T. W. Sorsch,   International Reliability Physics Symposium,  pp. 76-79,  (1998).

“Role of Non-equilibrium Carrier Distribution in Multi-Quantum Well Lasers,”  M. A. Alam, M. S. Hybertsen, G. Baraff, A. Grinberg, R. K. Smith,  Proceedings of International Conference on Compound Semiconductors, p. 193,   (1998)

 “Microscopic Simulation of High Speed InGaAsP Lasers,”  M. A. Alam, M. S. Hybertsen, R. K. Smith, G. Shtengel, and G. Baraff,  Presented at the 16-th International Conference on Semiconductor Lasers (ICSL), Nara, Japan, Oct, (1998).

“Design Considerations of Optical Interconnects Based on Selective Area MOCVD Process,”  M. A. Alam, R. People, S.K. Sputz, D. Lang, J.E. Johnson, S. Chu,  T. Perbell, M. Hybertsen, J. Vandenberg, K. Evans-Lutterodt,  E. Isaacs, L. Gruezke, and M. Marcus.  Presented at the 16-th  International Conference on Semiconductor  Lasers (ICSL), Nara, Japan, Oct, (1998).

“Physics-Based RF Noise Modeling of  Submicron MOSFETs,”   S. Donati, M. A. Alam, K. Krisch, S. Martin, M. Pinto, H. Vuong,  IEDM Technical Digest, pp. 81-84,  (1998).

“Ultra-Thin Gate Dielectrics: They Break Down, but do they Fail?”   B. E.  Weir, P.  J. Silverman, M. A. Alam, D. Monroe, G. A. Alers, T. Sorsch,  G. Timp, F. Baumann, C.T. Liu, Y. Ma, and D. Hwang, IEDM Technical Digest,  pp. 73-76,  (1997).

“Assessment of Quantum Yield Experiments via Full Band Monte Carlo Simulations,”   A. Ghetti, M. A. Alam, J. Bude, and F. Venturi,,  IEDM Technical Digest, pp. 873-876,  (1997).

“Simulation of Quantum Well Lasers,”  M. A. Alam, R.K. Smith, M.S. Hybertsen, G.A. Baraff, and M.R. Pinto,  SPIE  Conference Proceedings on Physics and Simulation of Optoelectronic Devices,  vol. 2994,  p. 709, (1997).

“Numerical Methods for Semiconductor Laser Simulation,”  R. K. Smith, M. A. Alam, M. S. Hybertsen, and G. Baraff,  in Proc. of International Workshop on Computational Electronics,  p. 433, (1997).

“Comprehensive Simulation of Semiconductor Lasers,” M. A. Alam, M. S. Hybertsen,  G. Baraff, R. K. S mith, M. Pinto,  in Proc. of the 24-th International Conference on Compound Semiconductors,  pp. 625-630,  (1997).

“Microscopic Treatment of Heterolayer Transport,''  M. A. Alam and M. S. Lundstrom, presented at the SPIE conference on Optoelectronic Systems and Lasers, Jan. 22-28, (1994).

“Entropy flow in a Mesoscopic Conductor and the Entropy of Erasure,”  P. Bagwell and M. A. Alam, in  Proceedings of Physics and Computation: PhysComp '92, D. Matzke, editor, IEEE Computer Society Press, Los Alamitos, Calif., Proceedings pp. 271-275, (1993).

“Simulation of Compound Semiconductor Devices,”  M. A. Alam and M. S. Lundstrom,  presented at the Hot Electron Conference, England, May (1993).

“Memory Efficient Scattering Matrix Device Simulation By Decomposing the Effects of Carrier Scattering and Field Acceleration,”  M. A. Stettler, M. A. Alam, M. S. Lundstrom,  Proceedings of International Workshop on VLSI Process and Device Modeling,  pp. 44–45, (1993).

“Mathematical Aspects of Scattering Matrix Approach,”   M. A. Alam, M.A. Stettler and M.S. Lundstrom,  Proceedings of the International Workshop on Computational  Electronics, pp 127-130, (1992).

 “A Critical Assessment of Hydrodynamic Transport Model using the Scattering Matrix Approach,'' M. A.   Stettler,  M. A. Alam, and M.S. Lundstrom,  Proceedings of  the NUPAD Conference,  pp. 97-102,  (1992).

  “A Monte Carlo simulation Study of Electronic Transport in Dissipative Structures,''  A. N. Khondker and M. A. Alam,  Proceedings of IEEE-Cornell Conference on Advanced Concepts  in High Speed Semiconductor Devices and Circuits, pp. 160-169, (1991).

Patents

2017: R. Bashir, B. Reddy, M. A. Alam, P. Nair, and J. Go, Coupled Heterogeneous Devices for pH Sensing, Purdue Research Foundation, 2017.  US Patent. 9,835,634.  

2017:  A. Jain, M. A. Alam and P. Nair. "Capacitive microelectromechanical switches with dynamic soft-landing." U.S. Patent 9,536,692, issued January 3, 2017.

2016: R. Bashir, Rashid, S. E. Salem, Carlos Eduardo Duarte Guevara, and M. A. Alam. "Thermal control of droplets by nanoscale field effect transistors." U.S. Patent 9,433,943, issued September 6, 2016.

2016: Jeong, C., Lundstrom, M. and Alam, M.A., Purdue Research Foundation, 2016. Hybrid transparent conducting materials. U.S. Patent 9,524,806. 

2015: Jain, A., Nair, P.R. and Alam, M.A., Purdue Research Foundation, 2015. Transistor-based particle detection systems and methods. U.S. Patent 9,052,281. 

2015: Jain, A., M. A.  Alam, and P. R. Nair. "Capacitive microelectromechanical switches with dynamic soft-landing." U.S. Patent No. 9,160,333. 13 Oct. 2015.

2015: Alam, M.A., Masuduzzaman, M. and Jain, A., Purdue Research Foundation, 2015. Nems devices with series ferroelectric negative capacitor. U.S. Patent Application 14/701,502. 

2015: Alam, M.A. and Dongaonkar, S., Purdue Research Foundation, 2015. Thin film photovoltaic panels and repair methods. U.S. Patent 8,946,846. 

2015: S. Ebrahimi, and M. A.  Alam. "Droplet-based monitoring of biological samples." U.S. Patent Application No. 15/269,972.

2015: Rogers, John A., Qing Cao, Muhammad Alam, and Ninad Pimparkar. "Medium scale carbon nanotube thin film integrated circuits on flexible plastic substrates." U.S. Patent 8,946,683, issued February 3, 2015.

2015: Alam, Muhammad Ashraful, and Sourabh Dongaonkar. "Thin film photovoltaic panels and repair methods." U.S. Patent 8,946,846, issued February 3, 2015.

2015:  M. A. Alam and P.  Dak. "Electrostatic control of ionic environment in a droplet based platform for biological applications." U.S. Patent Application No. 15/054,176. 

2015: Alam, M.A. and Masuduzzaman, M., Purdue Research Foundation, 2015. Increasing lifetime of ferroelectric devices. U.S. Patent Application 15/263,328. 

2014: Alam, M.A. and Masuduzzaman, M., Purdue Research Foundation, 2014. Lifetime of Ferroelectric Devices. U.S. Patent Application 14/533,897. 

2013: Alam, M.A., Ruiyi, Chen., Janes, D.B. and Jeong, C., Purdue Research Foundation, 2013. High optical transparent two-dimensional electronic conducting system and process for generating same. U.S. Patent Application 13/919,049. 

2013: Alam, M.A. and Dongaonkar, S., 2013. Shade-tolerant thin film photovoltaic panel. U.S. Patent Application 13/790,415. 

2008: Islam, A.E. and Alam, M.A., 2008. On the possibility of degradation-free field effect transistors. Applied Physics Letters, 92(17), p.173504. 

2007: Alam, M.A., Mason, P.W. and Smith, R.K., Agere Systems Inc, 2007. Predictive applications for devices with thin dielectric regions. U.S. Patent 7,230,812. 

2001: Alam, M.A., Hybertsen, M.S. and People, R., Agere Systems Optoelectronics Guardian Corp., 2001. Process for fabricating an optical waveguide. U.S. Patent 6,261,857. 

2000: Alam, M., Eng, J., Hybertsen, M., Johnson, J., Ketelsen, L., People, R., People, J. and Romero, D., Alam Muhammad Ashraful, Hybertsen Mark S. and Johnson John Evan, 2000. Semiconductor optical devices. U.S. Patent Application 09/561,148.