Journal

[1] Heng-Ming Hsu, Tai-Hsin Lee, and Chan-Jung Hsu, “Millimeterwave transmission line in 90-nm CMOS technology,” IEEE Journal on Emerging and Selected Topics in Circuits and System, vol.2, pp.194-199, June 2012. (SCI、EI) 

[2] Heng-Ming Hsu and Tai-Hsing Lee, “Compact Layout of DT-MOS Transistor with Source Follower Sub-Circuit in 90nm CMOS Technology,” IEEE Electron Device Letters, Vol. 29, No. 4, pp. 392-395, April, 2008. (SCI、EI) 

[3] Heng-Ming Hsu and Tai-Hsing Lee, “High LO-RF isolation of zero-IF mixer in 0.18 μm CMOS technology,” Analog Integrated Circuits and Signal Processing, Vol.49, pp.19-25, Oct., 2006. (SCI、 EI) 

[4] Heng-Ming Hsu and Tai-Hsing Lee “, Optimum bias of power transistor in 0.18um CMOS technology for Bluetooth application,” Solid- State Electronics, Vol. 50, pp.412-415, Mar 2006. (SCI、EI) 

[5] Y. S. Lin and Tai-Hsing Lee “, Analysis, Design, and Optimization of Matched-Impedance Wide-Band Amplifiers with Multiple Feedback Loops Using 0.18 µm Complementary Metal Oxide Semiconductor Technology”, Japanese Journal of Applied Physics, Vol. 43, No. 10, pp. 6912-6916, 2004. (SCI) 

[6] Tai-Hsing Lee and Y. S. Lin “, A 3-mW concurrent 2.4/5.2-GHz dual-band low-noise amplifier for WLAN applications in 0.18-μm CMOS technology” Microwave and Optical Technology Letters, Vol.42, N0. 4, pp. 287-292, August, 2004. (SCI、EI)