Journal Paper:

[1]  Van-Dong Doan;Jen-Tzong Jeng;Tsang-Hao Tsao;Thi-Trang Pham;Guan-Wei Huang;Chinh-Hieu Dinh, Tai-Hsing Lee, Peng-I Mei,“Development of a Broad Bandwidth Helmholtz Coil for Biomagnetic Application”, IEEE Transactions on Magnetics ( Volume: 57, Issue: 2, Feb. 2021). (SCI、EI)

[2]  Heng-Ming Hsu, Tai-Hsin Lee, and Chan-Jung Hsu, “Millimeterwave transmission line in 90-nm CMOS technology,” IEEE Journal on Emerging and Selected Topics in Circuits and System, vol.2, pp.194-199, June 2012. (SCI、EI)

[3]  Heng-Ming Hsu and Tai-Hsing Lee, “Compact Layout of DT-MOS Transistor with Source Follower Sub-Circuit in 90nm CMOS Technology,” IEEE Electron Device Letters, Vol. 29, No. 4, pp. 392-395, April, 2008. (SCI、EI)

[4]  Heng-Ming Hsu and Tai-Hsing Lee, “High LO-RF isolation of zero-IF mixer in 0.18 μm CMOS technology,” Analog Integrated Circuits and Signal Processing, Vol.49, pp.19-25, Oct., 2006. (SCI、 EI)

[5]  Heng-Ming Hsu and Tai-Hsing Lee “, Optimum bias of power transistor in 0.18um CMOS technology for Bluetooth application,” Solid-State Electronics, Vol. 50, pp.412-415, Mar 2006. (SCI、EI)

[6]  Y. S. Lin and Tai-Hsing Lee “, Analysis, Design, and Optimization of Matched-Impedance Wide-Band Amplifiers with Multiple Feedback Loops Using 0.18 µm Complementary Metal Oxide Semiconductor Technology”, Japanese Journal of Applied Physics, Vol. 43, No. 10, pp. 6912-6916, 2004. (SCI)

[7]  Tai-Hsing Lee and Y. S. Lin “, A 3-mW concurrent 2.4/5.2-GHz dual-band low-noise amplifier for WLAN applications in 0.18-μm CMOS technology” Microwave and Optical Technology Letters, Vol.42, N0. 4, pp. 287-292, August, 2004. (SCI、EI)

Conference Paper:

[1]  Tai-Hsing Lee; Jie Zhang; Shang Hong; Chi-Hsiang Hsu; Sih-Han Li; Shang-Chun Chen; Sheu Shyh-Shyuan; Chih-I Wu; Shawn S. H. Hsu, “A Low Power CMOS Driver Integrated with Mach-Zehnder Modulator for PAM4 Optical Transmissions”, 2020 50th European Microwave Conference (EuMC). (EI)

[2]  Wen-Chi Tsai;Shang-Chun Chen;Sin-Jhu Wun;Chih-Hsiang Hsu;Chen-Yu Lin;Jie Zhang;Kai-Ning Ku;Po-Chih Chang;Chung-Chih Wang;Wei-Yen Chen; Tai-Hsin Lee, Chien-Ying Huang;Ting-Hui Chen;Ming-Chang Lee , “Toward 3D Photonics by Integrating Double-Strip Silicon Nitride Waveguides on a Silicon Photonics Platform”. Optics & Photonics Taiwan International Conference (OPTIC), 2019.

[3]  Tai-Jun Chen, Huan-Min Su, Tai-Hsing Lee, Shawn S. H. Hsu, “A 64-Gb/s 4.2-Vpp Modulator Driver Using Stacked-FET Distributed Amplifier Topology in 65-nm CMOS”, 2019 IEEE MTT-S International Microwave Symposium (IMS). (EI)

[4]  Hao-Jiun Wu, Chien-Chang Chou, Chun-Yu Ku, Tzuen-Hsi Huang, Huey-Ru Chuang, Tsai-Kan Chien, Tai-Hsing Lee, "60-GHz Millimeter-Wave VoltageControlled Oscillators Using Transformer-Tunung Technique," in IEEE Asia-Pacific Microwave Conference, Kyoto, Japan, 6-9 Nov., 2018. (EI)

[5]  Heng-Ming Hsu and Tai-Hsing Lee, “Ultra-wide-band low noise amplifier using inductive feedback in 90-nm CMOS technology,” IEEE ISCAS, International Symposium on Circuits and Systems, pp.2470 -2473, May 2010. (EI)

[6]  Heng-Ming Hsu, Chan-Jung Hsu, Tai-Hsing Lee, and Chun-Sheng Wang, “Noise analysis of inductive shunt-series feedback technique used in ultrawideband low noise amplifier,” IEEE Asia-Pacific Microwave Symposium, pp.1136-1139, December 2009. (EI)

[7]  Heng-Ming Hsu, Tai-Hsing Lee, and Guan-Lin Fu, “A 90 nm DT-MOS transistor for high speed operation,” IEEE European Microwave Symposium, pp.246-249, September 2009. (EI)

[8]  Heng-Ming Hsu, and Tai-Hsing Lee, “A zero-IF sub-harmonic mixer with high LO-RF isolation using 0.18 um CMOS technology,” IEEE European Microwave Symposium, England, pp.336-339, September 2006. (EI)

[9]  Heng-Ming Hsu, Tai-Hsing Lee “, Optimum quiescent point of integrated power CMOS transistor for wireless portable applications,” IEEE ISCAS International Symposium on Circuits and Systems, pp.129-132, 2005. (EI)

[10] Yo-Sheng Lin, Tai-Hsing Lee, Hsiao-Bin Liang, Shey-Shi Lu “, Characterization and modeling of 100 nm RF generic CMOS and 500 nm RF power CMOS” IEEE VLSI Technology, System and Applications, pp. 105-108, Oct. 2003. (EI)

[11]  Tai-Hsing Lee and Y. S. Lin “, A High-Performance 5.2GHz CMOS LNA with Novel Substrate Contact Structure and Shield Pad,” 2002 National Symposium on Telecommunications, vol. II, pp.252-257, Puli, Taiwan,

[12]  Y. S. Lin, S. S. Lu, Tai-Hsing Lee, and H. B. Liang “, Characterization and Modeling of Small-Signal Substrate Resistance Effect in RF CMOS,” IEEE Radio Frequency Integrated Circuits Symposium, Seattle, U.S.A., pp. 315-318, 2002. (EI) Y. S. Lin, H. M. Hsu, Tai-Hsing Lee, and H. B. Liang “Effects of Geometric Structure and Temperature on the Performance of Spiral Inductors on Silicon,” Electron Device and Material Conference, Kaohsiung, Taiwan, 2001.

Patent:

[1] Tai-Hsing LEE, Jie ZHANG, “Distributed amplifier with low supply voltage and low power consumption for full-chip high-speed communication”, Pub.No: US2021152142A1, 2021 (Industrial Technology Research Institute)

[2] Tai-Hsing LEE, Jie ZHANG, “Transconductance controlling circuit”, Pub.No: US2020119691A1, 2020 (Industrial Technology Research Institute)

[3] Tsai-Kan Chien, Tai-Hsing LEE, “Wideband transimpedance amplifier circuit”, Pub.No: US2019190466A1, 2019 (Industrial Technology Research Institute) Jie ZHANG, 

[4] Tai-Hsing LEE,  “Array switch circuit, switch device and system chip package structure”, Pub.No:P51090046TW, 2022(已獲證,準備刊登), (Industrial Technology Research Institute)