2011 ~ Now
[1] Tai-Hsing Lee; Jie Zhang; Shang Hong; Chi-Hsiang Hsu; Sih-Han Li; Shang-Chun Chen; Sheu Shyh-Shyuan; Chih-I Wu; Shawn S. H. Hsu, “A Low Power CMOS Driver Integrated with Mach-Zehnder Modulator for PAM4 Optical Transmissions”, 2020 50th European Microwave Conference (EuMC). (EI)
[2] Wen-Chi Tsai;Shang-Chun Chen;Sin-Jhu Wun;Chih-Hsiang Hsu;Chen-Yu Lin;Jie Zhang;Kai-Ning Ku;Po-Chih Chang;Chung-Chih Wang;Wei-Yen Chen; Tai-Hsin Lee, Chien-Ying Huang;Ting-Hui Chen;Ming-Chang Lee , “Toward 3D Photonics by Integrating Double-Strip Silicon Nitride Waveguides on a Silicon Photonics Platform”. Optics & Photonics Taiwan International Conference (OPTIC), 2019.
[3] Tai-Jun Chen, Huan-Min Su, Tai-Hsing Lee, Shawn S. H. Hsu, “A 64-Gb/s 4.2-Vpp Modulator Driver Using Stacked-FET Distributed Amplifier Topology in 65-nm CMOS”, 2019 IEEE MTT-S International Microwave Symposium (IMS). (EI)
[4] Hao-Jiun Wu, Chien-Chang Chou, Chun-Yu Ku, Tzuen-Hsi Huang, Huey-Ru Chuang, Tsai-Kan Chien, Tai-Hsing Lee, "60-GHz Millimeter-Wave VoltageControlled Oscillators Using Transformer-Tunung Technique," in IEEE Asia-Pacific Microwave Conference, Kyoto, Japan, 6-9 Nov., 2018. (EI)
[5] Tai-Hsing Lee , Zhe-Wei Lin, "70% Ultra-Wide Tuning CMOS VCO Based On Magnetic Energy Adjustment ", in International Conference on Electronics and Communication Engineering , Oct. , 2024.
[6] Tai-Hsing Lee, Bo-Ying Huang, "A IM3 reduction technique for CMOS power amplifier" , Asian Wireless Power Transfer , Dec. ,2024.
2000 ~ 2010
[1] Heng-Ming Hsu and Tai-Hsing Lee, “Ultra-wide-band low noise amplifier using inductive feedback in 90-nm CMOS technology,” IEEE ISCAS, International Symposium on Circuits and Systems, pp.2470 -2473, May 2010. (EI)
[2] Heng-Ming Hsu, Chan-Jung Hsu, Tai-Hsing Lee, and Chun-Sheng Wang, “Noise analysis of inductive shunt-series feedback technique used in ultrawideband low noise amplifier,” IEEE Asia-Pacific Microwave Symposium, pp.1136-1139, December 2009. (EI)
[3] Heng-Ming Hsu, Tai-Hsing Lee, and Guan-Lin Fu, “A 90 nm DT-MOS transistor for high speed operation,” IEEE European Microwave Symposium, pp.246-249, September 2009. (EI)
[4] Heng-Ming Hsu, and Tai-Hsing Lee, “A zero-IF sub-harmonic mixer with high LO-RF isolation using 0.18 um CMOS technology,” IEEE European Microwave Symposium, England, pp.336-339, September 2006. (EI)
[5] Heng-Ming Hsu, Tai-Hsing Lee “, Optimum quiescent point of integrated power CMOS transistor for wireless portable applications,” IEEE ISCAS International Symposium on Circuits and Systems, pp.129-132, 2005. (EI)
[6] Yo-Sheng Lin, Tai-Hsing Lee, Hsiao-Bin Liang, Shey-Shi Lu “, Characterization and modeling of 100 nm RF generic CMOS and 500 nm RF power CMOS” IEEE VLSI Technology, System and Applications, pp. 105-108, Oct. 2003. (EI)
[7] Tai-Hsing Lee and Y. S. Lin “, A High-Performance 5.2GHz CMOS LNA with Novel Substrate Contact Structure and Shield Pad,” 2002 National Symposium on Telecommunications, vol. II, pp.252-257, Puli, Taiwan,
[8] Y. S. Lin, S. S. Lu, Tai-Hsing Lee, and H. B. Liang “, Characterization and Modeling of Small-Signal Substrate Resistance Effect in RF CMOS,” IEEE Radio Frequency Integrated Circuits Symposium, Seattle, U.S.A., pp. 315-318, 2002. (EI)
[9] Y. S. Lin, H. M. Hsu, Tai-Hsing Lee, and H. B. Liang “Effects of Geometric Structure and Temperature on the Performance of Spiral Inductors on Silicon,” Electron Device and Material Conference, Kaohsiung, Taiwan, 2001.