Mechanical properties of nanostructures, Laurent Pizzagalli, Sandrine Brochard, Julien Godet, Céline Gérard, (2015) In: Bhushan B. (Ed.) Encyclopedia of Nanotechnology: Springer, Dordrecht (www.springerreference.com).
Review on the Mechanical Properties of Nanowires Investigated by Simulations, J. Godet, J. Guénolé, S. Brochard and L. Pizzagalli in ’Mechanics of Nano-Objects’ edited by Samuel Forest, Anne Ponchet, Olivier Thomas (PressesMines ParisTech 2011).
Onset of Plasticity in Crystalline Nanomaterials, L. Pizzagalli, S. Brochard and J. Godet in ’Mechanical Stress on the Nanoscale’ edited by M. Hanbuecken; P. Mueller; R.B. Wehrspohn (WILEY 2011), Weinheim
Molecular dynamics fully based method for modelling nanoporous gold Maxime Guillotte, Julien Godet and Laurent Pizzagalli. Computational Materials Science, Volume 161, 15 April 2019, Pages 135-142
Molecular dynamics study of mechanical behaviour of gold-silicon core-shell nanowires under cyclic loading. Maxime Guillotte, Julien Godet and Laurent Pizzagalli. Materialia Volume 5, March 2019, 100204
Low-temperature intrinsic plasticity in silicon at small scales, A. Merabet, M. Texier, C. Tromas, S. Brochard, L. Pizzagalli, L. Thilly, J. Rabier, A. Talneau, Y.-M. Le Vaillant, O. Thomas, J. Godet, Acta Materialia, 161 (2018) 54-60.
Influence of strain on dislocation core in silicon, Laurent Pizzagalli, Julien Godet, Sandrine Brochard, Philosophical Magazine, 98 (2018) 1151-1169 (19pp)
Uniform tensile elongation in Au-Si core-shell nanowires, Julien Godet, Clarisse Furgeaud, Laurent Pizzagalli and Michael J. Demkowicz, Extreme Mechanics Letters 8 (2016) 151 (9pp)
Onset of ductility and brittleness in silicon nanowires mediated by dislocation nucleation, Firas Abed El Nabi, Julien Godet, Sandrine Brochard and Laurent Pizzagalli, Modelling Simul. Mater. Sci. Eng. 23 (2015) 025010 (13pp)
Atomistic simulations of 1/2<110> screw dislocation core in magnesium oxide, Ph. Carrez, J. Godet and P. Cordier, Comp. Mater. Sci. 103 (2015) 250–255.
Properties of threading screw dislocation core in wurtzite GaN studied by Heyd-Scuseria-Ernzerhof hybrid functional, M. Matsubara, J. Godet, L. Pizzagalli, and E. Bellotti, Appl. Phys. Lett. 103 (2013) 262107 (4pp)
A new parametrisation of the Stillinger-Weber potential for an improved description of defects and plasticity of silicon, L. Pizzagalli1, J. Godet, J.Guénolé, S. Brochard, E. Holmstrom, K. Nordlund and T. Albaret, J. Phys. Condens. Matter, 25 (2013) 055801 (12pp)
Plasticity in crystalline-amorphous core-shell Si nanowire controlled by nativeinterface defects, J. Guénolé, J. Godet and S. Brochard, Phys. Rev. B 87 (2013) 045201 (10pp)
Unexpected slip mechanism induced by the reduced dimensions in Si nanostructures: atomistic study, J. Guénolé, S. Brochard and J. Godet, Acta Materialia 59 (2011) 7464-7472 (9pp)
Comment on ’Bulk Dislocation Core Dissociation Probed by Coherent X Rays in Silicon’, L. Pizzagalli, J. Rabier, J. Godet, B. Devincre and L. Kubin, Phys. Rev. Lett. 107 (2011) 199601 (1pp)
Determination of activation parameters for the core transformation of the screw dislocation in silicon, J. Guénolé, J. Godet and L. Pizzagalli, Modelling Simul.Mater. Sci. Eng. 18 (2010) 065001
Elastic limit for surface step dislocation nucleation in face-centered cubic metals: temperature and step height dependence,S. Brochard, P. Hirel, L. Pizzagalli,
J. Godet, Acta Materialia 58 (2010) 4182-4190 MgO/metal interfaces at low coverage: An order N, semiempirical Hartree-Fock simulation, C. Noguera, J. Godet, and J. Goniakowski, Phys. Rev. B 81,(2010) 155409
Theoretical study of hydrogen stability and aggregation in dislocation cores in silicon, M. Matsubara, J. Godet and L. Pizzagalli, Phys. Rev. B 82 (2010) 024107
Investigation of the interaction between hydrogen and screw dislocation in silicon by first-principles calculations, M. Matsubara, J. Godet and L. Pizzagalli, J. Phys.: Condens. Matter 22 (2010) 035803
Glissile Dislocations with Transient Cores in Silicon, L. Pizzagalli, J. Godet and S. Brochard, Phys. Rev. Lett. 103 (2009) 065505
Evidence of two plastic regimes controlled by dislocation nucleation in silicon nanostructures, J. Godet, P. Hirel, S. Brochard, and L. Pizzagalli, J. Appl. Phys., 105 (2009) 026104.
Determination of activation parameters for dislocation formation from a surface in fcc metals by atomistic simulations, P. Hirel, J. Godet, S. Brochard, L. Pizzagalli, and P. Beauchamp, Phys. Rev. B, 78 (2008) 064109.
Hydrogen in Si(100)-SiO2 -HfO2 gate stacks: Relevant charge states and their location, J. Godet, P. Broqvist and A. Pasquarello, Appl. Phys. Lett., 91 (2007) 262901.
Proton-induced fixed positive charge at the Si(100)-SiO2 interface, J. Godet, F. Giustino and A. Pasquarello, Phys. Rev. Lett., 99 (2007) 126102.
Proton Diffusion Mechanism in Amorphous SiO2 , J. Godet and A. Pasquarello, Phys. Rev. Lett., 97 (2006) 155901.
Dislocation formation from a surface step in semiconductors: an ab initio study, J. Godet, L. Pizzagalli, S. Brochard and P. Beauchamp, Phys. Rev. B, 73:9 (2006) 092105.
Theoretical study of dislocation nucleation from simple surface defects in semiconductors, J. Godet, L. Pizzagalli, S. Brochard and P. Beauchamp, Phys. Rev. B, 70:5 (2004) 054109.
Comparison between classical potential and ab initio methods for silicon under large shear, J. Godet, L. Pizzagalli, S. Brochard and P. Beauchamp, J. Phys.: Condens. Matter, 15:41 (2003) 6943-6953.
Surface step effects on Si (100) under uniaxial tensile stress, by atomistic calculations, J. Godet, L. Pizzagalli, S. Brochard and P. Beauchamp, Scripta Materialia, 47:7 (2002) 481-486.
Propagation of stacking faults from "composite" dislocation cores at low temperature in silicon nanostructures. Julien Godet and Jacques Rabier submitted to J. Phys. : Conf. Series (2018)
Atomic scale mechanisms and brittle to ductile transition at low size in silicon, Sandrine Brochard, Firas Abed El Nabi, Laurent Pizzagalli, Amina Merabet, Michaël Texier, Christophe Tromas, Julien Godet, Materials Today: Proceedings 5 (2018)14693-14704
Surface effects on the mechanical behavior of silicon nanowires: Consequence on the brittle to ductile transition at low scale and low temperature, Julien Godet, Firas Abed El Nabi, Sandrine Brochard and Laurent Pizzagalli, Physica Status solidi (a) 212 (2015) 1643 (6pp)
Deformation of Silicon Nanowires Studied by Molecular Dynamics Simulations, J. Guénolé, S. Brochard and J. Godet, Modelling Simul. Mater. Sci. Eng. 19 (2011) 074003
Dislocation cores in silicon: new aspect from numerical simulations, L. Pizzagalli, J. Godet, J. Guénolé and S. Brochard, J. Phys.: Condens. Series, 281 (2011) 012002
Investigation of plasticity in silicon nanowires by molecular dynamics simulations, J. Guénolé, J. Godet and S. Brochard, Key Engineering Materials 465 (2011) 89-92
Dislocation nucleation from surface step in silicon: the glide set versus the shuffle set, J. Godet, P. Hirel, S. Brochard, and L. Pizzagalli, Phys. Stat. Sol. A, 206 (2009) 1885-1891.
First principles investigation of defect energy levels at semiconductor-oxide interfaces: Oxygen vacancies and hydrogen interstitials in the Si-SiO2-HfO2 stack, Peter Broqvist, Audrius Alkauskas, Julien Godet, and Alfredo Pasquarello, J. Appl. Phys., 105 (2009) 061603.
Proton at the Si-SiO2 interface: a First Principle investigation, J. Godet and A. Pasquarello, INFOS 2007, Athens (Greece), June 20-23, Microelectronic Engineering, 84 (2007) 2035-2038.
Ab initio study of charged states of H in amorphous SiO2, J. Godet and A. Pasquarello, INFOS 2005, Leuven (Belgium), June 22-24, Microelectronic Engineering, 80 (2005) 288-292.
Atomistic simulation of dislocation generation at surface step in metals and silicon., S. Brochard, J. Godet, L. Pizzagalli and P. Beauchamp, Solid mechanics and its applications (Proceedings of the IUTAM symposium on Mesoscopic Dynamics of Fracture Process and Materials Strength, Osaka), edited by Kluwer Academic Publishers (2004) p. 129.
Computer study of microtwins forming from surface steps of silicon, J. Godet, L. Pizzagalli, S. Brochard and P. Beauchamp, Proceedings of the HLSC - Euroconference CMS 2002, (XII Workshop), Computational Materials Science 30 (2004) 16-20.
Experimental and theoretical investigations of silicon nanopillars under high stress conditions revealing new plastic mechanisms Julen Godet, Laurent Pizzagalli, Sandrine Brochard, Loic Crouzier, Christophe Tromas, Ludovic Thilly, Amina Merabet, Michael Texier, Olivier Thomas, Jacques Rabier, Tristan Albaret,.Schöntal Symposium on ‘Dislocation based Plasticity’, February 26 th March 1 st 2018
Brittle to ductile transition in silicon at small scale: confrontation of simulations and experiments. Julien Godet, Firas Abed El Nabi, Laurent Pizzagalli, Sandrine Brochard, Loic Crouzier, Christophe Tromas, Ludovic Thilly, Amina Merabet, Michael Texier, Olivier Thomas, Tristan Albaret, GDR-international MECANO - annual meeting 2017 - May 10-12, 2017.
La transition fragile ductile dans le silicium aux basses dimensions : Confrontations des simulations aux expériences. Julien Godet, Firas Abed El Nabi, Laurent Pizzagalli, Sandrine Brochard, Loic Crouzier, Christophe Tromas, Ludovic Thilly, Amina Merabet, Michael Texier, Olivier Thomas, Tristan Albaret, Plasticité 2017 - Rennes (France) April 10-12, 2017.
Atomistic approach of the brittle ductile transition in silicon at low dimensions through the understanding of dislocation and crack nucleation mechanism. Julien Godet, Firas Abed El Nabi, J. Guénolé, Sandrine Brochard, and L. Pizzagalli, EDS 2014 - September 14-19,2014, Göttingen, Germany.
Onset of plastic mechanisms revealed by atomistic simulations: the case ofSi nanowires. J. Godet, J. Guénolé, F. Abed El Nabi, L. Pizzagalli and S.Brochard, Plasticity 3-8 janv 2014, Freeport Bahamas.