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Oxygen vacancy engineering in pulsed laser deposited BaSnO3 thin films on SrTiO3
Oxygen vacancy engineering in pulsed laser deposited BaSnO3 thin films on SrTiO3
W. Román Acevedo et al., submitted (2025), arXiv version here.
On the origin of filamentary resistive switching in oxides-based memristive devices
On the origin of filamentary resistive switching in oxides-based memristive devices
R. Leal Martir et al., submitted (2025), arXiv version here.
Electrically-driven control of nanoscale chemical changes in amorphous complex oxide memristive devices
Electrically-driven control of nanoscale chemical changes in amorphous complex oxide memristive devices
W. Acevedo et al., Nanotechnology 36, 105201 (2025)
Process-dependent ferroelectric and memristive properties in polycrystalline Ca:HfO2-based devices
Process-dependent ferroelectric and memristive properties in polycrystalline Ca:HfO2-based devices
C. Ferreyra et al., Frontiers in Materials 11, 1501000 (2025).
Oxygen vacancies kinetics in TaO2−h/Ta2O5−x memristive interfaces
Oxygen vacancies kinetics in TaO2−h/Ta2O5−x memristive interfaces
C. Ferreyra et al., J. Phys. D: Appl. Phys. 57, 495307 (2024)
Multi-mem behavior at reduced voltages in La1/2Sr1/2Mn1/2Co1/2O3−x perovskite modified with Sm:CeO2
Multi-mem behavior at reduced voltages in La1/2Sr1/2Mn1/2Co1/2O3−x perovskite modified with Sm:CeO2
W. Acevedo et al., Phys. Rev. Mater. 8, 075003 (2024).
Effect of memristor´s potentiation-depression curves peculiarities in the convergence of physical perceptrons
Effect of memristor´s potentiation-depression curves peculiarities in the convergence of physical perceptrons
W. Quiñonez et al., Phys. Scripta 98, 095917 (2023)
Coexistance of volatile and non-volatile memristive effects in phase-separated La0.5Ca0.5MnO3-based devices
Coexistance of volatile and non-volatile memristive effects in phase-separated La0.5Ca0.5MnO3-based devices
G. Ramirez et al., Appl. Phys. Lett. 122, 063503 (2023)
Oxygen vacancy dynamics in Pt/TiOx/TaOy/Pt memristors: exchange with the environment and internal electromigration
Oxygen vacancy dynamics in Pt/TiOx/TaOy/Pt memristors: exchange with the environment and internal electromigration
R. Leal Martir et al et al., Nanotechnology 34, 095202 (2023)
Epitaxial ferroelectric memristors integrated with silicon
Epitaxial ferroelectric memristors integrated with silicon
M. Rengifo et al., Frontiers Nanotech. 4:1092177 (2022)
Optimization of the multi-mem response of topotactic redox La1/2Sr1/2Mn1/2Co1/2O3−x
Optimization of the multi-mem response of topotactic redox La1/2Sr1/2Mn1/2Co1/2O3−x
W. Román Acevedo et al., APL Mater. 10, 011111 (2022)
Key Role of Oxygen-Vacancy Electromigration in the Memristive Response of Ferroelectric Devices
Key Role of Oxygen-Vacancy Electromigration in the Memristive Response of Ferroelectric Devices
C. Ferreyra et al., Phys. Rev. Appl. 14, 044045 (2020)
Selective activation of memristive interfaces in TaOx-based devices by controlling oxygen vacancies dynamics at the nanoscale
Selective activation of memristive interfaces in TaOx-based devices by controlling oxygen vacancies dynamics at the nanoscale
C. Ferreyra et al., Nanotechnology 31, 155204 (2020)
Large memcapacitance and memristance at Nb:SrTiO3/La0.5Sr0.5Mn0.5Co0.5O3-δ topotactic redox interface
Large memcapacitance and memristance at Nb:SrTiO3/La0.5Sr0.5Mn0.5Co0.5O3-δ topotactic redox interface
W. Román Acevedo et al., Appl. Phys. Lett. 116, 063502 (2020)
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