Laboratorio de Ablación Láser

We fabricate oxide thin films by Pulsed Laser Deposition (PLD) assisted by Reflection High Energy Electron Diffraction (RHEED), aiming to the development of novel nanoelectronic devices. 

Our main research lines are:

• Study of memristive devices for neuromorphic computation. New functionalities -such as memcapacitance- and materials -topotactic redox perovskites, for example- are explored. We follow an integral approach to the problem, from the deposition of the active oxide to the fabrication of the device -we use both optical and electronic lithography- and its characterisation. We also develop phenomenological models in close collaboration with theoreticians.

• Integration of ferroelectric perovskites with silicon. Development of ferroelectric memristors based on hafnia.

• Development of opto-electronic memristors.

• Volatile and non-volatile memristive effects in phase separated manganites

• Implementation of physical neural networks based on memristor cross-bar arrays. Study on the effect of memristor non-idealities on the network performance.

• Search of novel interfaces of otherwise insulating oxides with 2D metallic behavior.

We have ongoing collaborations with several groups both in Argentina and abroad the country (Univ. Groningen, Netherlands), Univ. Zaragoza (Spain), C2N (Saclay, France) PoliMi (Milano, Italy) and INN-CNEA Bariloche (Argentina), among others). Past collaborations include Imperial College London (UK), Univ. of Buenos Aires (Argentina), Institute CRISMAT (Caen, France), nanoGUNE Institute (San Sebastián, Spain), Univ. Autónoma de Barcelona (Spain), INQUIMAE Institute (Buenos Aires, Argentina) and others.