Assume lambda is .1 microns. Assume Vdd is 1.8 V, Vtp0 is -.4 V. and Vtn0 is .4 V. Vtpbodyeffect is -.55 V. and Vtnbodyeffect is .55 V.
Tox = 57 angstroms for thinox, and 5000 angstroms for thick oxide. Metal thickness is .5 microns.
You can use these values for transistor ks (betas): ßn (kn) (beta)= 219.4 W/L _ A(microamps)/V2 and ßp (kp)(beta)= 51.9 W/L m A/V2 .
e0 (epsilon) = 8.85 X 10 -14 F/cm, eoxide(epsilon) = 3.9, and esilicon(epsilon) = 11.7.
NA=4X1018cm-3 (substrate doping)
ND=2X1020 cm-3 (source/drain doping)
NA(sw)=8X1019 cm-3 (Sidewall (p+) doping)
ni2= 2.1X1020 cm-3 (intrinsic carrier concentration of silicon)
xj (diffusion depth) =32 nm
KT/q= .026 V (thermal voltage)
Cjbsn = 17.27 x 10-4 pF/ _m 2 and Cjbswn = 4.17 x 10-4 pF/ _m (micrometer).
Cjbsp = 18.8 x 10-4 pF/ _m 2and Cjbswp = 3.17 x 10-4 pF/ _m (micrometer).
Assume drain capacitances are the same as the source (in practice they are not).
1. (10%) Compute the worst-case rising and falling RC time constants at point 6 of the circuit below using the Elmore delay method in terms of the R’s and C’s. Assume the inputs to the NOR gate for rise time are both zero and only one of the inputs to the NOR gate is high for fall time, so that all possible capacitances can be discharged. (note that the nor gate is connected to the rest of the circuit on the left side of R1 and the voltage source is to be ignored.