Assume (unless stated otherwise in each problem):
Vdd = 1.8 v., Vss = Gnd = 0 v.,
Vtn = .4 v., Vtp = -.4 v,
Vtn(body effect) =.55 v., Vtp(body effect) = -.55 v.
Leakage current per transistor = .2 namp.
ε0 (epsilon) = 8.85 X 10 -14 F/cm and εoxide(epsilon) = 3.9
Rs of silicide = 4 Ω per □ (ohms per square). Rs of metal1 = .08 Ω per □ square (ohms per square). Rs of poly = 4.1 Ω per □ (ohms per square).
Rs of n diffusion =4.7 Ω per □ (ohms per square).
Rs of p diffusion =3.4 Ω per □ (ohms per square).
Cjbsn = 17.27 x 10-4 pF/ μm2 and Cjbswn = 4.17 x 10-4 pF/ μm (micrometer).
Cjbsp = 18.8 x 10-4 pF/ μm2and Cjbswp = 3.17 x 10-4 pF/ μm (micrometer).
l (lambda) = .100 μ (microns), 100 nm.
βn (beta)=kn = 219.4 W/L μ A(microamps)/V2 and βp (beta)= kp = 51 W/L μ A/V2
Tox = 57 angstroms for thinox, and 5000 angstroms for thick oxide.
1) Consider the following circuit. At time t = 0, nodes Vx, Vy and Vout are completely charged (1.8 Volts).