Year: 2019 (3)
1. Yao-Feng Chang et. al., “Non-Volatile RRAM Embedded into 22FFL FinFET Technology” VLSI, Kyoto, June 9- 14 (2019).
2. Sung Joon Yoon, Jiho Ryu, Muhammad Ismail, Ying-Chen Chen, Yao-Feng Chang, Min Ju Yun, Hee-Dong Kim, and Sungjun Kim, “Compliance current and temperature effects on non-volatile memory switching and volatile switching dynamics in Cu/SiOx/p++-Si device”, submitted.
3. Sungjun Kim, Jia Chen, Ying-Chen Chen, Min-Hwi Kim, Hyungjin Kim, Min-Woo Kwon, Sungmin Hwang, Muhammad Ismail, Yi Li, Xiang-Shui Miao, Yao-Feng Chang, Byung-Gook Park, "Neuronal dynamics in HfOx/AlOy-based homeothermic synaptic memristors with low-power and homogeneous resistive switching", Nanoscale 11 (1), 237-245 (2019).
Note: This work provides a new research regime of neurocomputing for potentially harsh environments to overcome the self-heating issue in neuromorphic chips.
Year: 2018 (10)
1. Book Chapter: "Memristor and Memristive Neural Networks", ISBN: 978-953-51-5481-5. Cheng Chih Hsieh, Yao-Feng Chang*, Ying-Chen Chen, Chih-Yang Lin, Meiqi Guo, Fei Zhou, Burt Fowler, Ting-Chang Chang, Sanjay Banerjee, Jack C. Lee, "Review of Recently Progress on Memcomputing (Memristor + Computing) Applications in Intrinsic SiOx-Based Resistive Switching Memory", InTech (2018).
2. Ying-Chen Chen, Chih-Yang Lin, Hui-Chun Huang, Sungjun Kim, Burt Fowler, Yao-Feng Chang, Xiaohan Wu, Gaobo Xu, Ting-Chang Chang, Jack C Lee, “Internal filament modulation in low-dielectric gap design for built-in selector-less resistive switching memory application”, Journal of Physics D: Applied Physics 51 (5), 055108 (2018).
3. Sungjun Kim, Sunghun Jung, Min‐Hwi Kim, Ying‐Chen Chen, Yao‐Feng Chang, Kyung‐Chang Ryoo, Seongjae Cho, Jong‐Ho Lee, Byung‐Gook Park, “Scaling Effect on Silicon Nitride Memristor with Highly Doped Si Substrate”, Small, 1704062 (2018).
Note: The experimental findings demonstrate that the scaled metal–nitride–silicon memristor device paves the way to realize CMOS‐compatible high‐density crosspoint array applications.
4. Ying-Chen Chen, Yao-Feng Chang, Jack C Lee, “Selector-Less Graphite Memristor: Intrinsic Nonlinear Behavior with Gap Design Method for Array Applications”, ECS Transactions 85 (1), 11-19 (2018).
5. Ying-Chen Chen, Hui-Chun Huang, Chih-Yang Lin, Sungjun Kim, Yao-Feng Chang*, Jack C Lee, “Effects of Ambient Sensing on SiOx-Based Resistive Switching and Resilience Modulation by Stacking Engineering”, ECS Journal of Solid State Science and Technology 7 (8), P350-P354 (2018).
6. Ying-Chen Chen, Szu-Tung Hu, Chih-Yang Lin, Burt Fowler, Hui-Chun Huang, Chao-Cheng Lin, Sungjun Kim, Yao-Feng Chang, Jack C Lee, “Graphite-based selectorless RRAM: improvable intrinsic nonlinearity for array applications”, Nanoscale, 10, 15608-15614 (2018).
Note: The results provide additional insights for built-in nonlinearity in 1R-only selectorless RRAMs, which are applicable to the low-power memory array, ultrahigh density storage, and in-memory neuromorphic computational configurations.
7. Chun-Kuei Chen, Chih-Yang Lin, Po-Hsun Chen, Ting-Chang Chang, Chih-Cheng Shih, Yi-Ting Tseng, Hao-Xuan Zheng, Ying-Chen Chen, Yao-Feng Chang, Chun-Chu Lin, Hui-Chun Huang, Wei-Chen Huang, Hao Wang, Simon M Sze, “The Demonstration of Increased Selectivity During Experimental Measurement in Filament-Type Vanadium Oxide-Based Selector”, IEEE Transactions on Electron Devices (99), 1-6 (2018).
8. Sungjun Kim, Min-Hwi Kim, Tae-Hyeon Kim, Ying-Chen Chen, Yao-Feng Chang, Muhammad Ismail, Yoon Kim, Kyung-Chang Ryoo, Byung-Gook Park, Concurrent events of memory and threshold switching in Ag/SiNx/Si devices, Journal of Vacuum Science & Technology B, 36, 051203 (2018).
9. Sungjun Kim, Chih-Yang Lin, Min-Hwi Kim, Tae-Hyeon Kim, Hyungjin Kim, Ying-Chen Chen, Yao-Feng Chang*, Byung-Gook Park, Dual Functions of V/SiOx/AlOy/p++ Si Device as Selector and Memory, Nanoscale Research Letters 13 (1), 252 (2018).
10. Yao-Feng Chang*, Burt W Fowler, Ying-Chen Chen, Zhi-Yang Lin, Gaobo Xu, Huichun Huang, Jia Chen, Sungjun Kim, Yi Li, Jack C. Lee, Beyond SiOx: An Active Electronics Resurgence and Biomimetic Reactive Oxygen Species Production and Regulation from Mitochondrion, J. Mater. Chem. C, Journal of Materials Chemistry C 6 (47), 12788-12799 (2018).
Year: 2017 (11)
1. Ying-Chen Chen, Yao-Feng Chang, Xiaohan Wu, Fei Zhou, Chih-Yang Lin, Cheng-Chih Hsieh, Burt Fowler, Ting-Chang Chang, Jack C. Lee, "Dynamic Conductance Characteristics in HfOx-based Resistive Random Access Memory", RSC Advances, 7 (21), 12984-12989 (2017).
2. Ying-Chen Chen, Yao-Feng Chang, Chih-Yang Lin, Xiaohan Wu, Burt Fowler, Ting-Chang Chang, Jack C. Lee, “Built-In Nonlinear Characteristics of Low Power Operating One-Resistor Selector-Less RRAM by Stacking Engineering”, ECS Transactions 80 (10), 923-931 (2017).
3. Sungjun Kim, Yao-Feng Chang and Byung-Gook Park, "Understanding rectifying and nonlinear bipolar resistive switching characteristics in Ni/Si3N4/p-Si memory devices" RSC Advances, 7, 17882 - 17888 (2017).
4. Sungjun Kim, Yao-Feng Chang, Min-Hwi Kim, Tae-Hyeon Kim, Yoon Kim, and Byung Gook Park, "Self-compliant bipolar resistive switching in SiN-based resistive switching memory", Materials, 10, 459 (2017).
5. Yao-Feng Chang*, Fei Zhou, Burt Fowler, Lauren Guckert, Ying-Chen Chen, Cheng-Chih Hsieh, Earl Swartzlander, Jack C. Lee, "Memcomputing (Memristor + Computing) in Intrinsic SiOx-Based Resistive Switching Memory: Arithmetic Operations for Logic Applications" IEEE Transactions on Electron Devices, 64 (7), 2977-2983 (2017).
6. Chih-Yang Lin, Kuan-Chang Chang, Ting-Chang Chang, Tsung-Ming Tsai, Chih-Hung Pan, Po-Hsun Chen, Min-Chen Chen, Yu-Ting Su, Yi-Ting Tseng, Yao-Feng Chang, Ying-Chen Chen, Hui-Chun Huang, and Simon M. Sze, "Attaining Resistive Switching Characteristics and Selector Properties by Varying Forming Polarities in a Single HfO2-based RRAM Device with Vanadium Electrode" Nanoscale, 9, 8586-8590 (2017).
1. Note: This study proposes a method for a HfO2-based device to exhibit both resistive switchings (RS) characteristics as resistive random access memory (RRAM) as well as selector characteristics by introducing vanadium (V) as the top electrode. This simple device structure with its easy operating method accomplishes a significant advancement of devices combining both selector properties and RRAM for remarkable real applications in the near future.
7. M. Q. Guo, Y. C. Chen, C. Y. Lin, Yao-Feng Chang*, Burt Fowler, Q. Q. Li, Jack C. Lee, and Y. G. Zhao, "Unidirectional threshold resistive switching in Au/NiO/Nb:SrTiO3 devices" Appl. Phys. Lett., 110 (23), 233504 (2017).
8. Cheng-Chih Hsieh, Yao-Feng Chang, Yoocharn Jeon, Anupam Roy, Davood Shahrjerdi, and Sanjay K. Banerjee, “Short-Term Relaxation in HfOx/CeOx Resistive Random Access Memory with Selector”, IEEE Electron Device Letters, 38, 871 - 874 (2017).
9. Sungjun Kim, Yao-Feng Chang, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Ying-Chen Chen, Jong-Ho Lee, and Byung-Gook Park, "Ultralow power switching in silicon-rich SiNy/SiNx double-layer resistive memory device" Physical Chemistry Chemical Physics, 19, 18988-18995 (2017).
10. Cheng-Chih Hsieh, Yao-Feng Chang*, Ying-Chen Chen, Davood Shahrjerdi, Sanjay.K.Banerjee, "Highly Non-linear and Reliable Amorphous Silicon Based Back-to-Back Schottky Diode as Selector Device for Large Scale RRAM Arrays", ECS Journal of Solid State Science and Technology, 6, N143-N147 (2017).
11. Sungjun Kim, Yao-Feng Chang, Min-Hwi Kim, and Byung-Gook Park, "Improved resistive switching characteristics in Ni/SiNx/p++-Si devices by tuning x", Appl. Phys. Lett. 111, 033509 (2017).
12. Sungjun Kim, Hyungjin Kim, Sungmin Hwang, Min-Hwi Kim, Yao-Feng Chang, Byung-Gook Park, “Analog Synaptic Behavior of a Silicon Nitride Memristor”, ACS applied materials & interfaces 9 (46), 40420-40427 (2017).
Year: 2016 (10)
1. Ying-Chen Chen, Xiaohan Wu, Meiqi Guo, Yao-Feng Chang, Fei Zhou, Burt Fowler, and Jack C. Lee, "Characterization of SiOx/HfOx bilayer Resistive-Switching Memory Devices" ECS Trans. 2016 volume 72, issue 2, 25-33 (2016).
2. Fei Zhou, Yao-Feng Chang*, Ying-Chen Chen, Xiaohan Wu, Ye Zhang, Burt Fowler and Jack C. Lee, "A Study of Interfacial Resistive Switching Mechanism by Proton Exchange Reactions on SiOx layer" Physical Chemistry Chemical Physics, 18, 700 - 703 (2016).
3. Yao-Feng Chang*, Burt Fowler, Ying-Chen Chen, Fei Zhou, Kuan-Chang Chang, Tsung-Ming Tsai, Ting-Chang Chang, Simon M. Sze, and Jack C. Lee, "A Synaptic Device Built in One Diode-One Resistor (1D-1R) Architecture with Intrinsic SiOx-based Resistive Switching Memory", Nano Devices and Sensors, ISBN: 978-1-5015-0153-1, April (2016).
4. Yao-Feng Chang*, Burt Fowler, Ying-Chen Chen, Fei Zhou, Xiaohan Wu, Yen-Ting Chen, Yanzhen Wang, Fei Xue, and Jack C. Lee, "Resistive Switching Characteristics and Mechanisms in Silicon Oxide Memory Devices", Nano Devices and Sensors, ISBN: 978-1-5015-0153-1, April (2016).
5. Yao-Feng Chang*, Burt Fowler, Fei Zhou, and Jack C. Lee, "Study of self-compliance behaviors and internal filament characteristics in intrinsic SiOx-based resistive switching memory" Appl. Phys. Lett. 108, 033504 (2016).
6. Yao-Feng Chang*, Burt Fowler, Ying-Chen Chen, Fei Zhou, Chih-Hung Pan, Ting-Chang Chang, and Jack C. Lee, "Demonstration of Synaptic Behaviors and Resistive Switching Characterizations by Proton Exchange Reactions in Silicon Oxide" Scientific Reports, 6, 21268 (2016).
1. Note: We realize a device with biological synaptic behaviors by integrating silicon oxide (SiOx) resistive switching memory with Si diodes. Minimal synaptic power consumption due to sneak-path current is achieved and the capability for spike-induced synaptic behaviors is demonstrated, representing critical milestones for the use of SiOx–based materials in future neuromorphic computing applications.
7. Yao-Feng Chang*, Burt Fowler, Ying-Chen Chen, Fei Zhou, Kuan-Chang Chang, Tsung-Ming Tsai, Ting-Chang Chang, Simon M. Sze, and Jack C. Lee, "A Synaptic Device Built in One Diode-One Resistor (1D-1R) Architecture with Intrinsic SiOx-based Resistive Switching Memory", Physical Sciences Reviews, April (2016).
8. Yao-Feng Chang*, Burt Fowler, Ying-Chen Chen, Fei Zhou, Xiaohan Wu, Yen-Ting Chen, Yanzhen Wang, Fei Xue, and Jack C. Lee, "Resistive Switching Characteristics and Mechanisms in Silicon Oxide Memory Devices", Physical Sciences Reviews, DOI: 10.1515/psr-2016-0011, May 2016.
9. Yao-Feng Chang*, Burt Fowler, Ying-Chen Chen, Jack C. Lee, "Proton Exchange Reactions in SiOx-Based Resistive Switching Memory: Insights from Impedance Spectroscopy", Progress in Solid State Chemistry 44 (2016), pp. 75-85 (5-years IF: 8.3).
10. Cheng-Chih Hsieh, Anupam Roy, Yao-Feng Chang, Davood Shahrjerdi, and Sanjay K. Banerjee, "A sub-1-volt analog metal oxide memristive-based synaptic device for energy-efficient brain-inspired computing" Appl. Phys. Lett. 109, 223501 (2016).
Year: 2015 (7)
1. Kuan-Chang Chang, Ting-Chang Chang, Tsung-Ming Tsai, Rui Zhang, Ya-Chi Hung, Yong-En Syu, Yao-Feng Chang, Min-Chen Chen, Tian-Jian Chu, Hsin-Lu Chen, Chih-Hung Pan, Chih-Cheng Shih, Jin-Cheng Zheng, Simon M Sze, “Physical and chemical mechanisms in oxide-based resistance random access memory” Nanoscale Research Letters, 10 (2015)
2. Burt W. Fowler, Yao-Feng Chang*, Fei Zhou, Yanzhen Wang, Pai-Yu Chen, Fei Xue, Yen-Ting Chen, Brad Bringhurst, Scott Pozder, and Jack C. Lee, "Electroforming and resistive switching in silicon dioxide resistive memory devices" RSC advances 5, 21215 (2015). (*Corresponding author)
3. Fei Zhou, Yao-Feng Chang*, Kwangsub Byun , Burt Fowler , Jack C. Lee, " Stabilization of Multiple Resistance Levels by Current-Sweep in SiOx-based Resistive Switching Memory" Appl. Phys. Lett., 106, 063508 (2015). (*Corresponding author)
4. Cheng-Chih Hsieh, Anupam Roy, Amritesh Rai, Yao-Feng Chang, Sanjay Banerjee, "Characteristics and Mechanism Study of Cerium Oxide Based Random Access Memories" Appl. Phys. Lett. 106, 173108 (2015).
5. Shixuan Yang, Ying-Chen Chen, Luke Nicolini, Praveenkumar Pasupathy, Jacob Sacks, Becky Su, Russell Yang, Daniel Sanchez, Yao-Feng Chang, Pulin Wang, David Schnyer, Dean Neikirk, Nanshu Lu, "Cut-and-Paste" Manufacture of Multiparametric Epidermal Sensor Systems (ESS)", Advanced Materials 2015.
Note: Multifunctional epidermal sensor systems (ESS) have been manufactured with a highly cost and time effective, benchtop, and large-area “cut-and-paste” method. The ESS made out of thin and stretchable metal and conductive polymer ribbons can be noninvasively laminated onto the skin surface to sense electrophysiological signals, skin temperature, skin hydration, and respiratory rate.
6. Yao-Feng Chang*, Burt Fowler, Fei Zhou, and Jack C. Lee, "The Intrinsic Unipolar SiOx-based Resistive Switching Memory: Characterization, Mechanism and Applications" ECS Transactions 69 (5), 149-164 (2015). (*Corresponding author)
7. Fei Zhou, Lauren Guckert, Yao-Feng Chang*, Earl Swartzlander, and Jack C. Lee, "Bidirectional Voltage Biased Implication Operations Using SiOx Based Unipolar Memristors" Applied Physics Letters, 107 (18), 183501 (2015). (*Corresponding author)
Year: 2014 (6)
1. Fei Zhou, Yao-Feng Chang*, Yanzhen Wang, Ying-Chen Chen, Fei Xue, Burt Fowler, and Jack C. Lee, "Discussion on device structures and SU-8 encapsulation for SiOx random access memory operation in air", Appl. Phys. Lett., 105, 163506 (2014). (*Corresponding author)
2. Fei Zhou, Yao-Feng Chang*, Kwangsub Byun, Burt Fowler, and Jack C. Lee, "Characterization of external resistance effect and performance optimization in unipolar-type SiOx-based resistive switching memory", Appl. Phys. Lett., 105, 133501 (2014). (*Corresponding author)
3. Yao-Feng Chang*, Burt Fowler, Ying-Chen Chen, Yen-Ting Chen, Yanzhen Wang, Fei Xue, Fei Zhou, and Jack C. Lee, "Intrinsic SiOx-based unipolar resistive switching memory Part II: Thermal effects on charge transport and characterization of multilevel programing", J. Appl. Phys., 116, 043709 (2014). (*Corresponding author)
4. Yao-Feng Chang*, Burt Fowler, Ying-Chen Chen, Yen-Ting Chen, Yanzhen Wang, Fei Xue, Fei Zhou, and Jack C. Lee, "Intrinsic SiOx-based unipolar resistive switching memory Part I: Oxide stoichiometry effects on reversible switching and program window optimization", J. Appl. Phys., 116, 043708 (2014). (*Corresponding author)
5. Fei Xue, Aiting Jiang, Yen-Ting Chen, Yanzhen Wang, Fei Zhou, Yao-Feng Chang, Jack C. Lee, "Nonplanar InGaAs Gate Wrapped Around Field-Effect Transistors", IEEE Transactions on Electron Devices, 61, 2332 (2014).
6. Li Ji, Yao-Feng Chang*, Burt Fowler, Ying-Chen Chen, Tsung-Ming Tsai, Kuan-Chang Chang, Min-Chen Chen, Ting-Chang Chang, Simon M. Sze, Edward T. Yu and Jack C. Lee, “Integrated One Diode–One Resistor Architecture in Nanopillar SiOx Resistive Switching Memory by Nanosphere Lithography”, Nano Letters., 14, 813 (2014). (*Corresponding author)
Note: For the first time, we report on a highly compact, one diode–one resistor (1D–1R) nanopillar device architecture for SiOx-based ReRAM fabricated using nanosphere lithography (NSL).
Year: 2013 (4)
1. Yao-Feng Chang*, Li Ji, Pai-Yu Chen, Fei Zhou, Fei Xue, Burt Fowler, Edward T. Yu, and Jack C. Lee, “Investigation of edge- and bulk-related resistive switching behaviors and backward-scan effects in SiOx-based resistive switching memory”, Appl. Phys. Lett., 103, 193508 (2013). (*Corresponding author)
2. Yao-Feng Chang*, Li Ji, Zhuo-Jie Wu, Fei Zhou, Yanzhen Wang, Fei Xue, Burt Fowler, Edward T. Yu, Paul S. Ho, and Jack C. Lee, “Oxygen-induced bi-modal failure phenomenon in SiOx-based resistive switching memory”, Appl. Phys. Lett., 103, 033521 (2013). (*Corresponding author)
3. Tian-Jian Chu, Ting-Chang Chang, Tsung-Ming Tsai, Hsing-Hua Wu, Jung-Hui Chen, Kuan-Chang Chang, Tai-Fa Young, Kai-Hsang Chen, Yong-En Syu, Geng-Wei Chang, Yao-Feng Chang, Min-Chen Chen, Jyun-Hao Lou, Jhih-Hong Pan, Jian-Yu Chen, Ya-Hsiang Tai, Cong Ye, Hao Wang, and Simon M Sze, “Charge Quantity Influence on Resistance Switching Characteristic During Forming Process”, IEEE Electron Device Letters, 34, 502 (2013).
4. Yen-Ting Chen, Burt Fowler, Yao-Feng Chang, Yanzhen Wang, Fei Xue, Fei Zhou and Jack C. Lee, “Reduced Electroforming Voltage and Enhanced Programming Stability in Resistive Switching of SiO2 Thin Films”, ECS Solid State Letters, 2, N18 (2013).
Year: 2012 (9)
1. Yen-Ting Chen, Burt Fowler, Yanzhen Wang, Fei Xue, Fei Zhou, Yao-Feng Chang, and Jack C. Lee, “Random Process of Filamentary Growth and Localized Switching Mechanism in Resistive Switching of SiOx Thin Films”, Solid State Science & Technology, 1, P148 (2012).
2. Yen-Ting Chen, Burt Fowler, Yanzhen Wang, Fei Xue, Fei Zhou, Yao-Feng Chang, Pai-Yu Chen, and Jack C. Lee, “Tristate Operation in Resistive Switching of SiO2 Thin Films”, IEEE Electron Device Letters, 33, 1702 (2012).
3. Fei Xue, Yen-Ting Chen, Yanzhen Wang, Fei Zhou, Yao-Feng Chang, Burt Fowler, and Jack C. Lee, “The Effect of Plasma Treatment on Reducing Electroforming Voltage of Silicon Oxide RRAM”, ECS Transactions, 45, 245 (2012).
4. Yanzhen Wang, Burt Fowler, Yen-Ting Chen, Fei Xue, Fei Zhou, Yao-Feng Chang, , and Jack C. Lee, “Effect of hydrogen/deuterium incorporation on electroforming voltage of SiOx resistive random access memory”, Appl. Phys. Lett., 101, 183505 (2012).
5. Yanzhen Wang, Yen-Ting Chen, Fei Xue, Fei Zhou, Yao-Feng Chang, Burt Fowler, and Jack C. Lee, “Memory switching properties of e-beam evaporated SiOx on N++ Si substrate”, Appl. Phys. Lett., 100, 083502 (2012).
6. Yao-Feng Chang*, Pai-Yu Chen, Burt Fowler, Yen-Ting Chen, Fei Xue, Yanzhen Wang, Fei Zhou, and Jack C. Lee, “Understanding the resistive switching characteristics and mechanism in active SiOx-based resistive switching memory”, J. Appl. Phys., 112, 123702 (2012). (*Corresponding author)
7. Yao-Feng Chang*, Yen-Ting Chen, Fei Xue, Yanzhen Wang, Fei Zhou, Burt Fowler, and Jack C. Lee, “Study of polarity effect in SiOx-based resistive switching memory”, Appl. Phys. Lett., 101, 052111 (2012). (*Corresponding author)
8. Yao-Feng Chang, Yu-Ting Tsai, Yong-En Syu, Geng-Wei Chang, Ya-Hsiang Tai and Ting-Chang Chang, “Study of resistive switching characteristics on a temperature-sensitive FeOx-transition layer by the TiN/SiO2/FeOx/Fe structure”, Solid State Science & Technology, 1, Q91 (2012).
9. Yao-Feng Chang, Yu-Ting Tsai, Yong-En Syu, and Ting-Chang Chang, “Study of Electric Faucet Structure by Embedding Co Nanocrystals in a FeOx-Based Memristor”, Solid State Science & Technology, 1, Q57 (2012).
Year: 2011 (2)
1. Yao-Feng Chang, Chun-Yen Chang, Ting-Chang Chang, Li-Wei Feng, Wei-Ren Chen, Shin-Yuan Wang, Kai-Lin Chuang and Shih-Cheng Chen, “Mechanism and characterizations studies of resistive switching effects on a thin FeOx-transition layer of the Ti/TiN/SiO2/FeOx/FePt structure by thermal annealing treatments”, Materials Chemistry and Physics, 131, 262 (2011).
2. Yao-Feng Chang, Ting-Chang Chang, and Chun-Yen Chang, “Investigation statistics of bipolar multilevel memristive mechanism And characterizations in a thin FeOx transition layer of TiN/SiO2/FeOx/Fe structure”, J. Appl. Phys., 110, 053703 (2011).
Year: 2010 (3)
1. Li-Wei Feng, Yao-Feng Chang, Chun-Yen Chang, Ting-Chang Chang, Shin-Yuan Wang, Pei-Wei Chiang, Chao-Cheng Lin, Shih-Ching Chen, Shih-Cheng Chen, “Reproducible resistance switching of a relatively thin FeOx layer produced by oxidizing the surface of a FePt electrode in a metal-oxide-metal structure”, Thin Solid Films, 519, 1536 (2010).
2. Li-Wei Feng, Chun-Yen Chang, Yao-Feng Chang, Ting-Chang Chang, Shin-Yuan Wang, Shih-Ching Chen, Chao-Cheng Lin, Shih-Cheng Chen, and Pei-Wei Chiang, “Improvement of resistance switching characteristics in a thin FeOx transition layer of TiN/SiO2/FeOx/FePt structure by rapid annealing”, Appl. Phys. Lett., 96, 222108 (2010).
3. Li-Wei Feng, Chun-Yen Chang, Yao-Feng Chang, Wei-Ren Chen, Shin-Yuan Wang, Pei-Wei Chiang, and Ting-Chang Chang, “A study of resistive switching effects on a thin FeOx transition layer produced at the oxide/iron interface of TiN/SiO2/Fe-contented electrode structures”, Appl. Phys. Lett., 96, 052111 (2010).
Year: 2009 (2)
1. Chao-Ching Cheng, Chao-Hsin Chien, Guang-Li Luo, Jun-ChengLiu, Yi-Cheng Chen, Yao-Feng Chang, Shin-Yuan Wang, Chi-Chung Kei, Chien-Nan Hsiao, and Chun-Yen Chang, “Five-element circuit model using linear-regression method to correct the admittance measurement of metal-oxide-semiconductor capacitor”, Journal of Vacuum Science & Technology B, 27, 130 (2009).
2. Li-Wei Feng, Chun-Yen Chang, Ting-Chang Chang, Chun-Hao Tu, Pai-Syuan Wang, Yao-Feng Chang, Min-Chen Chen, and Hui-Chung Huang, “Role of germanium in the reduced temperature dependence of Ti-based nanocrystals formation for nonvolatile memory applications”, Appl. Phys. Lett., 95, 262110 (2009).
Selected Conference Publications (Oral Presentations: 13, **Invited Talks: 6):
1. Ying-Chen Chen, Yao-Feng Chang, Jack C Lee, “Selector-Less Graphite Memristor: Intrinsic Nonlinear Behavior with Gap Design Method for Array Applications” 233th ECS Meeting (May 13 -17, 2018) in Seattle, WA.
2. Sungjun Kim, Ying-Chen Chen, Min-Hwi Kim, Yi Li, Xiang-Shui Miao, Yao-Feng Chang*, Byung-Gook Park, Jack C Lee, Synaptic properties considering temperature effect in HfOx-based memristor - Demonstration of homo-thermal synaptic behaviors, 2018 International Symposium on VLSI Technology, Systems and Application (2018 VLSI-TSA), Hsinchu, Taiwan, April 16-19, (2018).
3. Sungjun Kim, Yao-Feng Chang*, Ying-Chen Chen, Byung-Gook Park, and Jack C. Lee, Resistive Switching Characteristics and Mechanisms in Silicon Oxide and Silicon Nitride Memristors, ChinaRRAM International Workshop (Monday, June 12, 2017 to Wednesday, June 14, 2017).
4. Chih-Yang Lin, Ying-Chen Chen, Meiqi Guo, Chih-Hung Pan, Fu-Yuan Jin, Cheng Chih Hsieh, Xiaohan Wu, Min-Chen Chen, Yao-Feng Chang*, Fei Zhou, Burt Fowler, Kuan-Chang Chang, Tsung-Ming Tsai, Ting-Chang Chang, Yonggang Zhao, Simon M. Sze, Sanjay Banerjee, Jack C. Lee, "A Universal Model for Interface-type Threshold Switching Phenomena by Comprehensive Study of Vanadium Oxide-Based Selector", International Symposium on VLSI Technology, Systems and Applications (2017 VLSI-TSA), Hsinchu, Taiwan, April 24-27, (2017).
5. Sungjun Kim, Yao-Feng Chang** and B. G. Park, Invited Speaker to the 2017 collaborative conference on Materials Research (CCMR), "Resistive Switching Characteristics and Mechanisms in Silicon Oxide and Silicon Nitride Memory Devices", Collaborative Conference on Materials Research (CCMR), JeJu island, South Korea, June 26-30 (2017). (Invited Talk)
6. Yao-Feng Chang**, "Proton exchange reactions in SiOx-based resistive switching memory", Invited Speakers: 2017 EMN EAST MEETING (March 5 - 9, 2017 Siem Reap, Cambodia) (2017). (Invited Talk)
7. Ying-Chen Chen, Xiaohan Wu, Meiqi Guo, Fei Zhou, Yao-Feng Chang**, Burt Fowler, Chih-Hung Pan, Ting-Chang Chang, and Jack C. Lee, "Memcomputing (Memristor + Computing) in Intrinsic SiOx-Based Resistive Switching Memory" PRiME 2016 (Invited Talk).
8. Ying-Chen Chen, Xiaohan Wu, Meiqi Guo, Yao-Feng Chang, Fei Zhou, Burt Fowler, and Jack C. Lee, "Characterization of SiOx/HfOx bilayer Resistive-Switching Memory Devices" 229th ECS Meeting (May 29 - June 2, 2016) in San Diego.
9. Ying-Chen Chen, Yao-Feng Chang*, Burt Fowler, Fei Zhou, Xiaohan Wu, Cheng-Chih Hsieh, Heng-Lu Chang, Chih-Hung Pan, Min-Chen Chen, Kuan-Chang Chang, Tsung-Ming Tsai, Ting-Chang Chang, and Jack C. Lee, "Comprehensive Study of Intrinsic Unipolar SiOx-Based ReRAM Characteristics in AC Frequency Response and Low Voltage (< 2V) Operation" International Symposium on VLSI Technology, Systems and Applications (VLSI- TSA) April (2016) Taiwan (Best Student Paper Award Candidates).
10. Yao-Feng Chang**, Burt Fowler, Fei Zhou, and Jack C. Lee, "The Intrinsic Unipolar SiOx-based Resistive Switching Memory: Characterization, Mechanism and Applications" ECS Fall Meeting (2015). (Invited Talk)
11. Yao-Feng Chang**, "Intrinsic Unipolar SiOx-Based Resistive Switching Memory: Characterization, Mechanism and Applications" International Symposium on Next-Generation Electronics, Taipei, Taiwan, May 4 - 6 (2015). (Invited Talk and Section Chair)
12. Yao-Feng Chang, Burt Fowler, Fei Zhou, and Jack C. Lee, "Study of SiOx-Based Resistive Switching Memory (ReRAM) in Integrated One Diode – One Resistor (1D-1R) Architecture" International Symposium on Next-Generation Electronics, Taipei, Taiwan, May 4 - 6 (2015). (Best Student Award)
13. Yao-Feng Chang, Burt Fowler, Fei Zhou, Kwangsub Byun, and Jack C. Lee, "Comprehensive study of intrinsic unipolar SiOx-based ReRAM characteristics and resistive switching mechanism in TiW/SiOx/TiW structure" IEEE International Symposium on VLSI Technology, Systems and Applications, April 27-29 (2015).
14. Yao-Feng Chang, Burt Fowler, Fei Zhou, Kwangsub Byun, Jack C. Lee, "Understanding Electroforming and Resistive Switching in Silicon Dioxide Resistive Memory Devices" APS March Meeting (2015), March 2 – 6, San Antonio, Texas.
15. Fei Zhou, Fei Xue, Yao-Feng Chang** and Jack C. Lee, “III-V Gate-Wrap-Around Field-Effect-Transistors with High-k Gate Dielectrics”, IEEE Device Research Conference, June 22-25 (2014). [Invited Talk]
16. Yao-Feng Chang, Li Ji, Ying-Chen Chen, Fei Zhou, Tsung-Ming Tsai, Kuan-Chang Chang, Min-Chen Chen, Ting-Chang Chang, Burt Fowler, Edward T. Yu and Jack C. Lee, “High-density nano-pillar SiOx-based resistive switching memory using nano-sphere lithography to fabricate a one diode - one resistor (1D-1R) architecture”, IEEE International Symposium on VLSI Technology, Systems and Applications, April 28-30 (2014).
17. Yao-Feng Chang, Pai-Yu Chen, Burt Fowler, Yen-Ting Chen, Fei Xue, Yanzhen Wang, Fei Zhou, and Jack C. Lee, “Study of ambient effect in active SiOx-based resistive switching memory”, IEEE International Symposium on VLSI Technology, Systems and Applications, April 22-24 (2013).
18. Yao-Feng Chang, Li-Wei Feng, Chih-Wen Huang, Guo-Yuan Wu, Cheng-Hao Chang, Jia-Jiun Wu, Shin-Yuan Wang, Ting-Chang Chang and Chun-Yen Chang, “Tunable Resistance Switching Characteristics in a Thin FeOx- Transition Layer; Part II: Sweeping Voltage Controlling”, IEEE International NanoElectronics Conference, June 21-24, (2011).
19. Yao-Feng Chang, Chun-Yen Chang and Ting-Chang Chang, “Mechanism and characteristic studies of resistive switching effects on a thin FeOx-transition layer of the TiN/SiO2/FeOx/Fe structure by thermal annealing treatments”, International Conference on Metallurgical Coatings and Thin Films, May 2-6, (2011).
Conference Publications (Poster: 23):
1. Ying-Chen Chen, Xiaohan Wu, Yao-Feng Chang, Jack C Lee, "Nonlinearity Enhancement by Positive Pulse Stress in Multilevel Cell Selectorless RRAM Applications" Device Research Conference June 2018.
2. Sungjun Kim, Min-Hwi Kim, Tae-Hyeon Kim, Suhyun Bang, Dong keun Lee, Yao-Feng Chang, and Byung-Gook Park "Characterization of Resistive Switching Memory Devices with Tunnel Barrier" Silicon Nanoelectronics Workshop 2017 (June 04 - June 05 2017).
3. Meiqi Guo, Ying-Chen Chen, Yao-Feng Chang, Xiaohan Wu, Burt Fowler, Yonggang Zhao, and Jack C. Lee, "Characteristics of Nb-doped SrTiO3 and HfO2-based Selector Devices" Device Research Conference June 2016.
4. Cheng-Chih Hsieh, Anupam Roy, Yao-Feng Chang, Amritesh Rai, Sanjay Banerjee, "Cerium Oxide Based Bipolar Resistive Switching Memory with Low Operation Voltage and High Resistance Ratio" IEEE Device Research Conference (DRC 2015).
5. L. Ji, M. McDaniel, L. Tao, X. Li, A. Posadas, Yao-Feng Chang, A. Demkov, J. Ekerdt, D. Akinwande, R. Ruoff, J. Lee, and E. Yu, "Atomic Scale Engineering of Metal-Oxide-Semiconductor Photoelectrodes for Energy Harvesting Application Integrated with Graphene and Epitaxy SrTiO3" IEEE International Electron Devices Meeting (IEDM) (2014).
6. Kwangsub Byun, Fei Zhou, Burt Fowler, Yao-Feng Chang, Jack C. Lee, "Electrical characteristics of Si nanocrystal filament in unipolar SiOx based RRAM" IEEE Semiconductor Interface Specialists Conference (SISC), December 10-13 (2014).
7. Yao-Feng Chang, Burt Fowler, Fei Zhou, Kwangsub Byun, Jack C. Lee, "Study of SiOx-Based Resistive Switching Memory (ReRAM) in Integrated One Diode – One Resistor (1D-1R) Architecture" IEEE Semiconductor Interface Specialists Conference (SISC), December 10-13 (2014).
8. Yao-Feng Chang, Burt Fowler, Li Ji, Ying-Chen Chen, Fei Zhou, Edward T. Yu, and Jack C. Lee, "Comprehensive Study of Intrinsic Unipolar SiOx-Based RRAM Characteristics and Self-Compliance Characteristics in High-Density Nano Pillar-Type 1D-1R Architecture" 32nd International Conference on the Physics of Semiconductors (ICPS 2014).
9. Li Ji, Yao-Feng Chang, Burt Fowler, Ying-Chen Chen, Tsung-Ming Tsai, Kuan-Chang Chang, Min-Chen Chen, Ting-Chang Chang, Simon M. Sze, Edward T. Yu and Jack C. Lee, “Resistive Switching of SiOx with One Diode-One Resistor Nanopillar Architecture Fabricated via Nanosphere Lithography”, IEEE Device Research Conference, June 22-25 (2014).
10. Yao-Feng Chang, Burt Fowler, Ying-Chen Chen, Ji Li, Fei Zhou, and Jack C. Lee, “The Voltage-Triggered SET Mechanism and Self-Compliance Characteristics in Intrinsic Unipolar SiOx-Based Resistive Switching Memory”, IEEE Device Research Conference, June 22-25 (2014).
11. Li Ji, Yao-Feng Chang, Ying-Chen Chen, Fei Zhou, Tsung-Ming Tsai, Kuan-Chang Chang, Min-Chen Chen, Ting-Chang Chang, Burt Fowler, Jack C. Lee, Edward T. Yu, “Optimization of High Density One Diode - One Resistor Architecture in Nano-Pillar SiOx-Based Resistive Switching Memory by Nano-Sphere Lithography”, Materials Research Society Spring Meeting, April 21-25 (2014).
12. Yao-Feng Chang, Li Ji, Pai-Yu Chen, Fei Zhou, Fei Xue, Burt Fowler, Edward T. Yu, Jack C. Lee, “Study of SiOx-Based Resistive Switching Memory by Nano-Sphere Lithography”, IEEE Semiconductor Interface Specialists Conference, December 5-7 (2013).
13. Yao-Feng Chang, Ying-Chen Chen, Ji Li, Fei Xue, Yanzhen Wang, Fei Zhou, Burt Fowler and Jack C. Lee, “Comprehensive Trap-Level Study in SiOx-based Resistive Switching Memory”, IEEE Device Research Conference, June 23-26 135 (2013).
14. Fei Xue, Aiting Jiang, Yen-Ting Chen, Yanzhen Wang, Fei Zhou, Yao-Feng Chang, Jack C. Lee, “Excellent device performance of 3D In0.53Ga0.47As gate-wrap-around field-effect-transistors with high-k gate dielectrics”, IEEE International Electron Devices Meeting (IEDM), December 10-13 (2012).
15. Yao-Feng Chang, Yen-Ting Chen, Fei Xue, Yanzhen Wang, Fei Zhou, Pai-Yu Chen, Burt Fowler, and Jack C. Lee, “Study of device architecture and multilevel characteristics in SiOx-based resistive switching memory”, IEEE Semiconductor Interface Specialists Conference, December 6-8 (2012).
16. Yao-Feng Chang, Yen-Ting Chen, Fei Xue, Yanzhen Wang, Fei Zhou, Burt Fowler, and Jack C. Lee, “Study of SiOx-based Complementary Resistive Switching Memristor”, IEEE Device Research Conference, June 18-20 (2012).
17. Guo-Yuan Wu, Yao-Feng Chang, Li-Wei Feng, Chun-Yen Chang, and Ting-Chang Chang, “Study of Bipolar Multilevel Memristive Mechanism and Characterizations in a Thin FeOx Transition Layer Device”, International Conference on. Solid State Devices and Materials, September 28-30, (2011).
18. Li-Wei Feng, Chun-Yen Chang, Ting-Chang Chang, Yao-Feng Chang, Shin-Yuan Wang, Pei-Wei Chiang, Chao-Cheng Lin, ”Reproducible resistance switching effects of a relatively thin FeOx layer produced by oxidizing the surface of a FePt electrode in a metal-oxide-metal structure”, International Conference on Metallurgical Coatings and Thin Films, April 26–30, (2010).
19. Yao-Feng Chang and Chun-Yen Chang, “Thermal treatment effect for resistance switching characteristic of Ti/TiN/SiO2/PtFe structure”, International Electron Devices and Materials Symposia, November 19–20 (2009), Taoyuan, Taiwan.
20. Yao-Feng Chang, Li-Wei Feng, Wei-Ren Chen and Chun-Yen Chang, “Resistance switching characteristic of Co nanocRystals embedded in Al/SiO2/FePt Structure”, Symposium on Nano Device Technology, April 29–30 (2008), Hsinchu, Taiwan.
21. Guo-Yuan Wu, Cheng-Hao Chang, Jia-Jiun Wu, Yao-Feng Chang, Ting-Chang Chang and Chun-Yen Chang, “Tunable Resistance SwitchiNg Characteristics in a Thin FeOx- Transition Layer”, Symposium on Nano Device Technology, April 21–22 (2011), Hsinchu, Taiwan.
22. Yao-Feng Chang, Li-Wei Feng, Chih-Wen Huang, Guo-Yuan Wu, Cheng-Hao Chang, Jia-Jiun Wu, Shin-Yuan Wang, Ting-Chang Chang and Chun-Yen Chang, “Tunable Resistance Switching Characteristics in a Thin FeOx-Transition Layer; Part I: Compliance Current Controlling”, IEEE International NanoElectronics Conference, June 21-24, (2011).
23. Yao-Feng Chang, Chun-Yen Chang, Li-Wei Feng, Chao-Cheng Lin, Shin-Yuan Wang, Shih-Cheng Chen and Pei-Wei Chiang, “Thermal treatment effect on the resistive switching characteristics of a thin FeOx transition layer by Ti/TiN/SiO2/FeOx/FePt structure”, International Electron Devices and Materials Symposia, November 18–19 (2010), Taoyuan, Taiwan.