Dr. Yao-Feng Chang is a Memory Reliability Engineer at Intel. He received the B.S. degrees in Electrical Engineering from National Sun Yat-sen University in 2007; the M.S. degree in Electronics Engineering from National Chiao Tung University in 2009; and the PhD degree in the Department of Electrical and Computer Engineering from The University of Texas at Austin in 2015. From 2011 to 2012, he was an intern at the SEMATECH, Austin, in the ReRAM Program. From 2013 to 2014, he was a research scientist at the PrivaTran (a build-up company).
He has published over 100 journal publications and conference proceedings and has been awarded numerous research awards. He got the Senior Prize of Ben Streetman Awards from J. J. Pickle Research Center for his work on studies of resistive switching memories. His research since the 2009 has focused on three topics: (1) SiOx- and SiNx- Based ReRAM fabrication, characterization, and mechanism understanding. (2) Stateful Boolean logic and synaptic Post-Moore computing, and bio-inspiration biomimetic systems in electronic devices. (3) Selector integration for large-scale low power array design.
Journal Refereed ( >360 reviews verified from Publons record): Applied Physics Letters, Journal of Applied Physics, IEEE Electron Device Letters, Semiconductor Science and Technology, ECS Journal of Solid State Science and Technology, ECS Solid State Letters, Nanotechnology, Journal of the Electrochemical Society, RSC Advances, Electrochemical Society Interface, Journal of Physics D: Applied Physics, Physical Chemistry Chemical Physics, Journal of Materials Chemistry C, Advanced Electronic Materials, Journal of Vacuum Science and Technology B, Journal of Physics and Chemistry of Solids, ACS Applied Materials & Interfaces, Journal of Neural Engineering, Molecules, PLOS ONE, IEEE Transactions on Circuits and Systems I, Microelectronic Engineering, Applied Sciences, Journal of the Electron Devices Society, Materials Science in Semiconductor Processing, Current Physical Chemistry, Advances in Nanomaterials, Materials, Nanoscale, AIP Advances, Machine Learning and Knowledge Extraction, Applied Physics Express, Chemical Physics Letters, Journal of Low Power Electronics and Applications, Computers, Physica Status Solidi (RRL) - Rapid Research Letters, Microelectronics Journal, Journal of Alloys and Compounds, Chemical Reports, Materials Today, Nanoscience & Nanotechnology-Asia, Journal of Materiomics, Applied Surface Science, Journal of Asian Ceramic Societies, Entropy, and IEEE Transactions on Nanotechnology.
Updated News:
1. Senior Prize, Ben Streetman Prize, recognizing outstanding research by a graduate student in electronic materials and devices for his work on Studies of Resistive Switching Memories, The University of Texas at Austin, 2015-2016.
2. Selected to attend 2016 Purdue Prospective Faculty Workshop.
3. Outstanding Reviewer Award winners for 2016 (Journal of Physics D: Applied Physics) and Advisory Panel of Journal of Physics D: Applied Physics (JPhysD) [from present to 2018 Dec].
4. Committee Member in Advanced Materials World Congress (AMWC 2018, www.vbripress.com/amwc17) during 04 – 08 February 2018, Singapore.
5. Baltic Conference Series 2017, Sweden (08 - 11 OCTOBER 2017, Link: http://www.vbripress.com/bcs17winter/pages/committee).
6. Best Paper Award for the 2017 VLSI-TSA!
7. Win 2018 Electronics Travel Awards!
8. Outstanding Reviewer Award winners for 2017, in recognition of the high quality and timeliness of your reviews for Nanotechnology!