R. Paul, S. Vallisree, T. R. Lenka, F. A. Talukdar, “Modeling and Simulation of CZTS Thin-Film Solar Cell for Efficiency Enhancement,” Journal of Electronic Materials (Springer), 14th Jan 2022. (Accepted) [IF: 1.938, Q2, SCI]
Nour El I. Boukortt, T. R. Lenka, Salvatore Patanè, Giovanni Crupi, “Effects of Varying the Fin Width, Fin Height, Gate Dielectric Material, and Gate Length on the DC and RF Performance of a 14-nm SOI FinFET Structure,” Electronics (MDPI) 2022, 11(1), 91; https://doi.org/10.3390/electronics11010091 . [Q2, SCI]
R. T. Velpula, B. Jain, R. Wang, T. R. Lenka, H. P. T. Nguyen, “Polarization-Engineered P-type Electron-Blocking Layer Free III-Nitride Deep-Ultraviolet Light-Emitting Diodes for the Enhanced Carrier Transport,” Journal of Electronic Materials (Springer), 2022. https://doi.org/10.1007/s11664-021-09363-z . [IF: 1.938, Q2, SCI]
J. T. Mazumder, T. R. Lenka, S. K. Tripathy, Per Erik Vullum, P. S. Menon, F. Lin, A. G. Aberle, “Investigation of structural, morphological, and optoelectronic properties of Ga-doped TiO2 nanoparticles for electron transport layer in solar cell applications: An experimental and theoretical study,” Journal of Physics and Chemistry of Solids (Elsevier), Vol. 161, 2022, 110410. ISSN 0022-3697, DOI: 10.1016/j.jpcs.2021.110410. [Q2, SCI]
A. Srivastava, S. K. Tripathy, T. R. Lenka, P. S. Menon, F. Lin, A. G. Aberle, “Device Simulation of Ag2SrSnS4 and Ag2SrSnSe4 Based Thin-Film Solar Cells from Scratch,” Advanced Theory and Simulations (Wiley), Nov 2021. DOI: 10.1002/adts.202100208. [Q1, SCI]
S. Vallisree, T. R. Lenka, V. Goyal and H. P. T. Nguyen, “Carrier Transport Mechanism in Bottom Gate Thin-Film Transistor (TFT) with SnO as Active layer for CMOS Displays,” International Journal of Numerical Modelling: Electronic Devices and Fields (Wiley), Nov 2021. DOI: 10.1002/jnm.2975. [IF: 1.26 (2020), Q3, SCI]
R. Singh, T. R. Lenka, D. K. Panda, and H. P. T. Nguyen, “Investigation of β-Ga2O3-based HEMT for Low Noise Amplification and RF Application,” Engineering Research Express (IOP Science), 3(3), p.035042, 2021. DOI: 10.1088/2631-8695/ac23b3. [Scopus, ESCI]
T. R. Lenka, R. Singh, S. K. Tripathy, V. Goyal, T. K. Nguyen and H. P. T. Nguyen, “2DEG Characteristics of InAlAs/InP based HEMTs by Solving Schrödinger and Poisson Equations followed by Device Characteristics,” International Journal of Numerical Modelling: Electronic Networks, Devices and Fields (Wiley), July 24, 2021. DOI:10.1002/jnm.2941. [IF: 1.26 (2020), SCI]
A. Srivastava, S. K. Tripathy, T. R Lenka, P. S Menon, F. Lin, A. G Aberle, “An Ab-initio Investigation of Mechanical and Thermodynamic Properties of Ag2MgSn(S/Se)4 in Kesterite and Stannite Phases,” Applied Physics A-Materials Science & Processing (Springer), Vol. 127, No. 8, pp. 1-12, 2021. DOI: 10.1007/s00339-021-04741-0. [IF: 2.584 SCI, SCIE, Scopus]
R. T. Velpula, B. Jain, T. R. Lenka, H. P. T. Nguyen, “Controlled Electron Leakage in Electron Blocking Layer Free InGaN/GaN Nanowire Light-Emitting Diodes,” FACTA UNIVERSITATIS, Series: Electronics and Energetics (FUEE), Vol. 34, No. 3, July 2021. [ESCI]
R. Singh, T. R. Lenka, H. P. T. Nguyen, “Analytical Study of Effect of Energy Band Parameters and Lattice Temperature on Conduction Band Offset in AlN/Ga2O3 HEMT,” FACTA UNIVERSITATIS, Series: Electronics and Energetics (FUEE), Vol. 34, No. 3, July 2021. [ESCI]
R. Singh, T. R. Lenka, D. K. Panda, and H. P. T. Nguyen, “Investigation of β-Ga2O3-based HEMT for Low Noise Amplification and RF Application”. TechRxiv, 13-May-2021, doi: 10.36227/techrxiv.14566407.v1.
J. T. Mazumder, T. R. Lenka, Milan Zunic, Zorica Brankovic, S. K. Tripathy, P. S. Menon, F. Lin, A. G. Aberle, “First principle study on structural and optoelectronic properties and bandgap modulation in germanium incorporated tin (IV) oxide,” Materials Today Communications (Elsevier), 102393, Apr 2021. [IF: 2.678]
S. Vallisree, R Thangavel, T. R. Lenka, “An Efficient Modeling Strategy for Performance Optimization in 2-Terminal CZTS-Silicon Tandem Solar Cells,” International Journal of Energy Research (Wiley), Feb 2021. DOI: 10.1002/er.6540.
J. Husna, P. S. Menon, P. Chelvanathan, J. Sampe, N. Amin, S. K. Tripathy, T. R. Lenka, A. R. Md. Zain, and M. A. Mohamed, “Bandgap Shifting and Crystalline Quality of RF-Sputtered IntrinsicZnO Nanofilm for TFSC Application,” International Journal of Nanoelectronics and Materials, Vol. 13 (Special Issue), pp.1-10, Dec 2020.
A. Srivastava P. Dua, T. R. Lenka, S. K. Tripathy, “Numerical simulations on CZTS/CZTSe based solar cell with ZnSe as an alternative buffer layer using SCAPS- 1D,” Materials Today: Proceedings, Nov 2020. DOI: 10.1016/j.matpr.2020.10.986.
A. Baidya, T. R. Lenka, S. Baishya, “Linear Distortion Analysis of 3D Double Gate Junctionless Transistor with High-k Dielectrics and Gate Metals,” Silicon, Aug 2020. DOI: 10.1007/s12633-020-00669-x. [IF: 1.499]
A. Srivastava, P. Sarkar, S. K. Tripathy, T. R Lenka, P. S Menon, F. Lin, A. G Aberle, “Structural, electronic and optical properties of Ag2MgSn(S/Se)4 quaternary chalcogenides as solar cell absorber layer: An Ab-initio study,” Solar Energy, Vol. 209, Oct 2020, Pages 206-213. DOI: 10.1016/j.solener.2020.08.094. [IF: 4.674]
H. Q. T. Bui, R. Velpula, B. Jain, M. Philip, H. Tong, T. R. Lenka, and H.P.T. Nguyen, "High-performance nanowire ultraviolet light-emitting diodes with potassium hydroxide and ammonium sulfide surface passivation," Appl. Opt. (OSA), Vol. 59, Issue 24, pp. 7352-7356 (2020), DOI: 10.1364/AO.400877. [IF: 1.961]
D. K. Panda, T. R. Lenka, R. T. Velpula, B. Jain, H. Q. T. Bui, T. T. Pham, H. P. T. Nguyen, “Single and Double Gate based AlGaN/GaN MOS-HEMTs for Design of Low Noise Amplifiers: A Comparative Study,” IET Circuits, Devices & Systems, July 2020. (Accepted)
P. Sarkar, A. Srivastava, S. K. Tripathy, K. L. Baishnab, T. R. Lenka, P. S. Menon, F. Lin, A. G. Aberle, “Exploring the Effect of Ga3+ Doping on Structural, Electronic and Optical Properties of CH3NH3PbCl3 Perovskites: An Experimental Study,” Journal of Materials Science: Materials in Electronics (Springer), 14 July 2020. (Accepted)
R. Singh, T. R. Lenka, R. T. Velpula, B. Jain, H. Q. T. Bui, H. P. T. Nguyen, “A novel β-Ga2O3 HEMT with fT of 166 GHz and X-band POUT of 2.91 W/mm,” International Journal of Numerical Modeling- Electronic Networks Devices and Fields (Wiley), 2020, DOI:10.1002/jnm.2794. [IF: 0.833]
R. Singh, T. R. Lenka, H. P. T. Nguyen, “Optimization of Dynamic Source Resistance in Novel β-Ga2O3 HEMT and its Effect on Electrical Characteristics,” Journal of Electronic Materials (Springer), June 09, 2020; DOI: 10.1007/s11664-020-08261-0. [IF: 1.676 (2018)]
R. Singh, T. R. Lenka, R. T. Velpula, B. Jain, H. Q. T. Bui, H. P. T. Nguyen, “Investigation of Current Collapse and Recovery Time due to Deep Level Defect Traps in β-Ga2O3 HEMT,” Journal of Semiconductors (IOP Science), Vo. 41, pp. 1-4, May 23, 2020. (Press)
T. R. Lenka, “GaN and Ga2O3-based Wide Bandgap Semiconductor Devices for Emerging Nanoelectronics,” CSI Transactions on ICT (Springer), May 28, 2020. DOI: 10.1007/s40012-020-00290-8.
T. R. Lenka, A. C. Soibam, K. Dey, T. Maung, F. Lin, “Numerical Analysis of High-Efficiency Lead-Free Perovskite Solar Cell with NiO as Hole Transport Material and PCBM as Electron Transport Material,” CSI Transactions on ICT (Springer), May 21, 2020. DOI: 10.1007/s40012-020-00291-7.
R. Singh, T. R. Lenka, D. K. Panda, R. T. Velpula, B. Jain, H. Q. T. Bui, H. P. T. Nguyen, “The Dawn of Ga2O3 HEMTs for High Power Electronics - A Review,” Materials Science in Semiconductor Processing (Elsevier), May 18, 2020. [IF: 2.722]
R. T. Velpula, B. Jain, H. Q. T. Bui, T. T. Pham, V. T. Le, H. D. Nguyen, T. R. Lenka, H. P. T. Nguyen, “Improving Carrier Transport in AlGaN Deep Ultraviolet Light-Emitting Diodes Using a Strip-in-a-Barrier Structure,” Applied Optics, OSA, May 08, 2020. [IF 1.973]
P. Sarkar, A. Srivastava, S. K. Tripathy, K. L. Baishnab, T. R. Lenka, P. S. Menon, F. Lin, A. G. Aberle, “Impact of Sn doping on methylammonium lead chloride perovskite: An experimental study,” Journal of Applied Physics, AIP, 127,125110 (2020); DOI: 10.1063/1.5133457. [IF: 2.328]
S. Vallisree, A, Sharma, R Thangavel, T. R. Lenka, “Investigations of carrier transport mechanism and junction formation in Si/CZTS dual absorber solar cell technology,” Applied Physics A-Materials Science & Processing (Springer), 126, 163 (2020). DOI: 10.1007/s00339-020-3343-9. [IF: 1.784]
Ravi Teja Velpula, Barsha Jain, Ha Quoc Thang Bui, Tan Thi Pham, Van Thang Le, Hoang-Duy Nguyen, Trupti Ranjan Lenka, and Hieu Pham Trung Nguyen, "Numerical investigation on the device performance of electron blocking layer free AlInN nanowire deep ultraviolet light-emitting diodes," Opt. Mater. Express (OSA) 10, 472-483 (2020). [IF: 2.673]
Barsha Jain, Ravi Tejas Velpula, Thang Ha Quoc Bui, Nguyễn Trương Khang, Trupti Ranjan Lenka, Hieu Pham Trung Nguyen, “High Performance Electron Blocking Layer Free InGaN/GaN Nanowire White-Light-Emitting Diodes,” Optics Express (OSA), Vol. 28, Issue 1, pp. 665-675 (2020), DOI:10.1364/OE.28.000665. [IF: 3.561]
Ha Quoc Thang Bui, Ravi Teja Velpula, Barsha Jain, Omar Hamed Aref, Hoang-Duy Nguyen, Trupti Ranjan Lenka, Hieu Pham Trung Nguyen, "Full-Color InGaN/AlGaN Nanowire Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy: A Promising Candidate for Next Generation Micro Displays," Micromachines 2019, 10(8), 492; https://doi.org/10.3390/mi10080492.
S. R. Routray, T. R. Lenka, “Effect of Degree of Strain Relaxation on Polarization Charges of GaN/InGaN/GaN Hexagonal and Triangular Nanowire Solar Cells,” Solid-State Electronics (Elsevier), 23 Mar 2019. DOI: https://doi.org/10.1016/j.sse.2019.03.049 [IF: 1.66]
D. K. Panda, T. R. Lenka, “Linearity Improvement in E-mode Ferroelectric GaN MOS-HEMT using Dual Gate Technology,” IET Micro & Nano Letters, 2019.
D. Panda, T. R. Lenka, "Analytical Model Development of Channel Potential, Electric Field, Threshold Voltage and Drain Current for Gate Workfunction Engineered Short Channel E-mode N-Polar GaN MOS-HEMT," Microsystem Technologies (Springer), Jan 2019. DOI: https://doi.org/10.1007/s00542-019-04324-3.
S. Vallisree, R. Thangavel, T. R. Lenka, “Modelling, simulation, optimization of Si/ZnO and Si/ZnMgO heterojunction solar cells” Materials Research Express (IOP Science), 13 Nov 2018. (Accepted) [IOP Science [IF: 1.151]
M. Krishnasamy, D. Upadrashta, Y. Yang, T. R. Lenka, "Distributed Parameter Modelling of Cutout 2-DOF Cantilevered Piezo-Magneto-Elastic Energy Harvester," IEEE/ASME Journal of Microelectromechanical Systems, Oct 2018, DOI: 10.1109/JMEMS.2018.2875788.
A. Baidya, T. R. Lenka, S. Baishya, “3D Double Gate Junctionless Nanowire Transistor Based Pass Transistor Logic Circuits for Digital Applications,” IETE Journal of Research, pp.1-8, 2019.
S. Routray, T. R. Lenka, “Polarization Charges in High Performance GaN/InGaN Core/Shell Multiple Quantum Well Nanowire for Solar Energy Harvesting,” IEEE Transactions on Nanotechnology, June 2018. DOI:10.1109/TNANO.2018.2848. [IF: 2.857]
D. Panda, G. Amarnath, T. R. Lenka, “Small-Signal Model Parameter Extraction of E–Mode N-Polar GaN MOS-HEMT using Optimization Algorithms and its Comparison,” Journal of Semiconductors (IOP Science), Vol. 39, No. 7, July 2018. DOI: 10.1088/1674-4926/39/7/000000 [Scopus]
G. Amarnath, D. Panda, T. R. Lenka, “Modelling and simulation of DC and microwave characteristics of AlInN(AlGaN)/AlN/GaN MOSHEMTs with different gate lengths," International Journal of Numerical Modelling: Electronic Networks, Devices and Fields (Wiley), Apr 2018. DOI: 10.1002/jnm.245616. [SCI, Scopus]
D. K. Panda, T. R. Lenka, " A Compact Thermal Noise Model for Enhancement mode N-polar GaN MOS-HEMT including 2DEG Density Solution with Two Sub-bands," IET Circuits, Devices & Systems, Mar 2018, DOI: 10.1049/iet-cds.2017.0226. [SCI]
M. Krishnasamy, T. R. Lenka, "An analytical model with two degree of freedom of piezo-magneto-elastic energy harvester for low frequency wide bandwidth applications," IET Micro & Nano Letters, Mar 2018. DOI: 10.1049/mnl.2017.0633 [SCIE]
S. Vallisree, A. Ghosh, R. Thangavel, T. R. Lenka, “Theoretical investigations on enhancement of photovoltaic efficiency of nanostructured CZTS/ZnS/ZnO based Solar Cell device,” Journal of Materials Science: Materials in Electronics (Springer) [SCI] [IF: 2.09]
B. Shougaijam, C. Ngangbam, T. R. Lenka, "Enhancement of Broad Light Detection based on Annealed Al-NPs Assisted TiO2-NWs Deposited on p-Si by GLAD Technique," IEEE Transactions on Nanotechnology, Jan 2018. DOI: 10.1109/TNANO.2018.2795344. [IF: 2.485]
M. Krishnasamy, Feng Qian, Lei Zuo, T. R. Lenka, “Distributed Parameter Modeling to Prevent Charge Cancellation for Discrete Thickness Piezoelectric Energy Harvester,” Solid State Electronics (Elsevier). DOI: https://doi.org/10.1016/j.sse.2017.12.010. [IF:1.66]
D. Panda, T. R. Lenka, “Investigation of Gate Induced Noise in E-mode GaN MOS-HEMT and its Effect on Noise Parameters,” International Journal of Numerical Modelling: Electronic Networks, Devices and Fields (Wiley). DOI: 10.1002/jnm.2318. [SCI, Scopus]
S. R. Routray, T. R. Lenka, “InGaN-based Solar Cells: A Wide Solar Spectrum Harvesting Technology for 21st Century,” CSI Transactions on ICT (Springer), Nov 2017. DOI: 10.1007/s40012-017-0181-9.
G. Amarnath and T. R. Lenka, “Analytical model development for unified 2D electron gas sheet charge density of AlInN/GaN MOSHEMT,” International Journal of Electronics and Telecommunications, Vol. 63, No. 4, pp.363-368, 2017. DOI: 10.1515/eletel-2017-0049. (Scopus, ESCI, Clarivate Analytics)
D. Panda, T. R. Lenka, “Oxide Thickness Dependent Compact Model of Channel Noise for E-Mode AlGaN/GaN MOS-HEMT,” AEU-International Journal of Electronics and Communications (Elsevier), Vol. 82, pp. 467–473, Dec 2017, DOI:https://doi.org/10.1016/j.aeue.2017.09.025. [SCI]
D. Panda, T. R. Lenka, “Effects of trap density on drain current LFN and its model development for E-mode GaN MOS-HEMT,” Superlattices and Microstructures (Elsevier), Sept 2017, DOI: 10.1016/j.spmi.2017.09.045. [SCI]
M. Krishnasamy, T. R. Lenka, “Distributed parameter modeling for autonomous charge extraction of various multilevel segmented piezoelectric energy harvesters,” Microsystem Technologies (Springer), pp.1-11, Sept 2017, DOI: 10.1007/s00542-017-3559-6. [SCI]
G. Amarnath, D. Panda, T. R. Lenka, “Microwave frequency small-signal equivalent circuit parameter extraction for AlInN/GaN MOSHEMT,” International Journal of RF and Microwave Computer-Aided Engineering (Wiley), Sept 2017. DOI: https://doi.org/10.1002/mmce.21179 [SCIE, Thomson Reuters]
A. Baidya, T. R. Lenka, S. Baishya, “Impact of Thin High-K Dielectrics and Gate Metals on RF Characteristics of 3D Double Gate Junctionless Transistor,” Materials Science in Semiconductor Processing (Elsevier), Vol. 71, pp. 413–420, 2017. DOI: https://doi.org/10.1016/j.mssp.2017.08.031 [Scopus]
S. R. Routray, B. Shougaijam, T. R. Lenka, “Exploiting Polarization Charges for High Performance (000-1) facet GaN/InGaN/GaN Core/Shell/Shell Triangular Nanowire Solar Cell,” IEEE Journal of Quantum Electronics, July 2017. DOI: 10.1109/JQE.2017.2734078. [SCI]
S. R. Routray, T. R. Lenka, “Performance Analysis of Nanodisk and Core/Shell/Shell-Nanowire type III-Nitride Heterojunction Solar Cell for Efficient Energy Harvesting,” Superlattices and Microstructures (Elsevier) July 2017. DOI: 10.1016/j.spmi.2017.07.038. [SCI]
S. R. Routray, T. R. Lenka, “Spontaneous and Piezo-phototronics Effect on Geometrical Shape of III-Nitride Wurtzite Nanowires for High Efficiency Photovoltaic Applications,” Micro & Nano Letters (IET), June 2017. DOI: 10.1049/mnl.2017.0403. [SCIE]
G. Amarnath, R. Swain, T. R. Lenka, “Modeling and Simulation of 2DEG Density and Intrinsic Capacitances in AlInN/GaN MOSHEMT,” International Journal of Numerical Modelling: Electronic Networks, Devices and Fields (Wiley). DOI: 10.1002/jnm.2268. [SCI]
M. Krishnasamy, T. R. Lenka, “Distributed Parameter Model for Assorted Piezoelectric Harvester to Prevent Charge Cancellation,” IEEE Sensors Letters, Vol. 1, Issue. 3, 2017. DOI: 10.1109/LSENS.2017.2705348. [Scopus]
B. Shougaijam, C. Ngangbam, T. R. Lenka, “Plasmon Sensitized Optoelectronic Properties of Au Nanoparticles assisted Vertically Aligned TiO2 Nanowires by GLAD Technique,” IEEE Transactions on Electron Devices, Vol. 64, No.3, pp. 1127-1133, 2017. DOI: 10.1109/TED.2017.2648500]
S. R. Routray, T. R. Lenka, “Effect of Metal-fingers/doped-ZnO Transparent Electrode on Performance of GaN/InGaN Solar Cell,” Journal of Semiconductors (IOP Science), Vol. 38, No. 9, 2017. [Scopus, Thomson Reuters]
D. Panda, T. R. Lenka, “Modeling and Simulation of Enhancement mode p-GaN Gate AlGaN/GaN HEMT for RF Circuit Switch Applications,” Journal of Semiconductors (IOP Science), Vol. 38, No. 6, 2017. [DOI: 10.1088/1674-4926/38/6/06xxxx] [Scopus]
B. Shougaijam, R. Swain, C. Ngangbam, T. R. Lenka, “Electrical Characteristics of MOS Device with annealed TiO2 Nanowires based Dielectric,” Journal of Semiconductors (IOP Science), Vol. 38, No. 5, 2017. DOI: 10.1088/1674-4926/38/5/05xxxx. [Scopus]
R. Swain, K. Jena, T. R. Lenka, “Modeling of Capacitance and Threshold Voltage for ultra-thin normally-off AlGaN/GaN MOSHEMT,” Pramana-Journal of Physics (Springer), Vol. 88, No. 3, pp. 3-7, 2017. [DOI: 10.1007/s12043-016-1310-y] [IF: 0.649]
B. Shougaijam, R. Swain, C. Ngangbam, T. R. Lenka, “Enhanced Photodetection by Glancing Angle Deposited Vertically Aligned TiO2 Nanowires,” IEEE Transactions on Nanotechnology, Vol. 15, Issue. 3, pp. 389 – 394, May 2016. DOI: 10.1109/TNANO.2016.2536162. [IF: 2.485]
R. Kashyap, T. R. Lenka, S. Baishya, “Distributed Parameter Modeling of Cantilevered d33 Mode Piezoelectric Energy Harvesters,” IEEE Transactions on Electron Devices, Vol. 63, No. 3, pp.1281-1287, Jan, 2016. DOI: 10.1109/TED.2015.2514160, ISSN: 0018-9383) [IF: 2.472]
R. Swain, K. Jena, T. R. Lenka, “Modeling of forward gate leakage current in MOSHEMT using Trap Assisted Tunneling and Poole-Frenkel Emission,” IEEE Transactions on Electron Devices, Vol. 63, Issue. 3, 2016. DOI: 10.1109/TED.2016.2555851. [IF: 2.472]
K. Jena, R. Swain, and T. R. Lenka, “Effect of thin gate dielectrics on DC, RF and Linearity Characteristics of Lattice-Matched AlInN/AlN/GaN MOSHEMT,” IET Circuits, Devices & Systems, Vol. 10, No. 5, pp. 423-432, 2016. DOI: http://dx.doi.org/10.1049/iet-cds.2015.0332 [IF: 0.794]
A. Baidya, T. R. Lenka, S. Baishya, “Mixed-mode simulation and analysis of 3D double gate junctionless nanowire transistor for CMOS circuit applications,” Superlattices and Microstructures (Elsevier), Vol. 100, pp.14-23, 2016. DOI:http://dx.doi.org/10.1016/j.spmi.2016.08.028. [IF: 1.885]
R. Swain, K. Jena, T. R. Lenka, “Oxide interfacial charge engineering towards normally-off AlN/GaN MOSHEMT,” Materials Science in Semiconductor Processing (Elsevier), Vol. 53, pp. 66-71, 2016. DOI: https://doi.org/10.1016/j.mssp.2016.06.008 [IF: 1.955 (2014) JCR-Thomson Reuters, Scopus]
R. Swain, K. Jena and T. R. Lenka, “Model Development for I-V and Transconductance Characteristics of Normally-off AlN/GaN MOSHEMT,” Semiconductors (Springer), Vol. 50, No. 3, pp. 384–389. 2016. ISSN 1063-7826. (Springer) [IF: 0.739 (2014), JCR-Thomson Reuters, SCI]
R. Kashyap, T. R. Lenka, S. Baishya, “A Model for Doubly Clamped Piezoelectric Energy Harvesters with Segmented Electrodes,” IEEE Electron Device Letters, Vol. 36, No. 12, pp. 1369 – 1372, Dec 2015. DOI: 10.1109/LED.2015.2496186. [SCI]
K. Jena, R. Swain, and T. R. Lenka, “Impact of AlN Spacer on Analog Performance of Lattice-Matched AlInN/AlN/GaN MOSHEMT,” Journal of Electronic Materials (Springer), Vol. 45, Issue 4, pp 2172–2177, 2015. DOI: 10.1007/s11664-015-4296-1. [IF: 1.798 (2014), JCR-Thomson Reuters, SCI].
K. Jena, R. Swain, and T. R. Lenka, “Impact of a Drain Field Plate on the Breakdown Characteristics of AlInN/GaN MOSHEMT,” Journal of the Korean Physical Society (Springer), Vol. 67, No. 9, November 2015, pp. 1592-1596. DOI: 10.3938/jkps.67.1592. [IF: 0.418 (2014), JCR-Thomson Reuters, SCI]
J. Panda, K. Jena, R. Swain, T. R. Lenka, “Modeling on Oxide Dependant 2DEG Sheet Charge Density and Threshold Voltage in AlGaN/GaN MOSHEMT,” Journal of Semiconductors (IOP Science), 2015. DOI:10.1088/issn.1674-4926. [Scopus, Thomson Reuters]
K. Jena, R. Swain, T. R. Lenka, “Physics-Based Mathematical Model of 2DEG Sheet Charge Density and DC Characteristics of AlInN/AlN/GaN MOSHEMT,” International Journal of Numerical Modeling: Electronic Networks, Devices and Fields (Wiley), DOI: 10.1002/jnm.2117. [IF: 0.629]
R. Swain, J. Panda, K. Jena and T. R. Lenka, “Modeling and Simulation of Oxide Dependent 2DEG Sheet Charge Density in AlGaN/GaN MOSHEMT,” Journal of Computational Electronics (Springer), Vol.14, No. 3, pp. 754-761, 2015. [IF: 1.52]
R. Swain, K. Jena and T. R. Lenka, “Interface DOS Dependent Analytical Model Development for DC Characteristics of Normally-off AlN/GaN MOSHEMT,” Superlattices and Microstructures (Elsevier), Vol. 84, pp.54-65, 2015. DOI: 10.1016/j.spmi.2015.04.025. [IF: 1.885].
K. Jena, R. Swain, T. R. Lenka, “Modeling and Comparative analysis of DC characteristics of AlGaN/GaN HEMT and MOSHEMT devices,” International Journal of Numerical Modeling: Electronic Networks, Devices and Fields (Wiley), 2015, DOI: 10.1002/jnm.2048. [IF: 0.629]
K. Jena, R. Swain, T. R. Lenka, “Impact of barrier thickness on gate capacitance—Modeling and Comparative analysis of GaN based MOSHEMTs,” Journal of Semiconductors (IOP Science), Vol. 36, Issue 3:034003-5, 2015. [Scopus, Thomson Reuters]
K. Jena, R. Swain, T. R. Lenka, “Impact of oxide thickness on gate capacitance—Modeling and Comparative Analysis of GaN based MOSHEMTs,” Pramana-Journal of Physics (Springer), Vol. 85, No. 6, pp. 1221–1232, 2015. [IF: 0.649]
A. Baidya, V. Krishnan, S. Baishya, T. R. Lenka, “Effect of Thin Gate Dielectrics and Gate Materials on Simulated Device Characteristics of 3D Double Gate JNT,” Superlattices and Microstructures (Elsevier), Vol. 77, pp.209–218, 2015. [IF: 1.885]
D. Pandey, T. R. Lenka, “A Model Predicting Sheet Charge Density and Threshold Voltage with dependence on Interface States Density in LM-InAlN/GaN MOSHEMT,” Semiconductors (Springer), Vol. 49, No. 4, pp. 513–518, 2015. [IF: 0.739]
D. Pandey, T. R. Lenka, “Model Development for Analyzing 2DEG Sheet Charge Density and Threshold Voltage considering Interface DOS for AlInN/GaN MOSHEMT,” Journal of Semiconductors (IOP Science), Vol. 35, No. 10, pp. 104001, 2014. [Scopus]
A Bhattacharjee, D Pandey, T. R. Lenka, “An Investigation of Novel Characteristics of ultrathin Al0.2Ga0.8N/GaN MOSHEMT having 20nm Gate length and SiO2 Gate Dielectric,” Journal of Electron Devices, Vol. 19, pp. 1674-1679, 2014.
A. Bhattacharjee, T. R. Lenka, “Performance Analysis of 20nm Gate Lenth In0.2Al0.8N/GaN HEMT with Cu-Gate having a Remarkable High ION/IOFF Ratio,” Journal of Semiconductors (IOP Science), Vol. 35, No. 6, pp. 064002, 2014. [Scopus, Thomson Reuters]
T. R. Lenka, G N Dash, A K Panda, “RF and Microwave Characteristics of 10nm thick InGaN-Channel Gate Recessed HEMT,” Journal of Semiconductors (IOP Science), Vol. 34, No. 11, pp. 114003-1-6, Nov 2013. [Scopus, Thomson Reuters]
A. R. Dash, T. R. Lenka, “VLSI Implementation of Reed-Solomon Encoder Algorithm for Communication Systems,” Radioelectronics and Communications Systems (Springer), Vol. 56, No. 9, pp. 441-447, 2013. [Scopus]
T. R. Lenka, A K Panda, “AlGaN/GaN-based HEMT on SiC-Substrate for Microwave Characteristics using different Passivation Layers,” Pramana-Journal of Physics (Springer), Vol. 79, No.1, pp.151-163, 2012. [IF: 0.649 (2014), JCR-Thomson Reuters]
T. R. Lenka, G N Dash, A K Panda, “A Comparative 2DEG Study of InxAl1-xN/ (In, Al, Ga) N/GaN-based HEMTs,” Physics Procedia (Elsevier), Vol. 25, pp. 36-43, 2012. [Scopus]
T. R. Lenka, S. Das, R Ku Nayak, G N Dash, A K Panda, “Study of interface sheet charge density of AlGaAs/InGaAs/GaAs-based pseudomorphic HEMT,” Asian Journal of Physics, Vol. 21, No 2, 187-192, 2012.
T. R. Lenka, A. K. Panda, “Role of Nanoscale AlN and InN for the Microwave Characteristics of AlGaN/ (Al, In) N/GaN - based HEMT,” Semiconductors (Springer), Vol. 45, No. 9, pp.1211-1218, 2011. [IF: 0.739 (2014), JCR-Thomson Reuters, SCI]
T. R. Lenka, A. K. Panda, “Characteristics Study of 2DEG Transport Properties of AlGaN/GaN and AlGaAs/GaAs-based HEMT,” Semiconductors (Springer), Vol. 45, No. 5, pp.660-665, 2011. [IF: 0.739 (2014), JCR-Thomson Reuters, SCI]
T R Lenka, A K Panda, “Effect of Structural Parameters on 2DEG Density and C~V Characteristics of AlxGa1-xN/AlN/GaN-based HEMT,” Indian Journal of Pure and Applied Physics (NISCAIR), Vol. 49, No. 6, pp.416-422, 2011. [IF: 0.766 (2014), JCR-Thomson Reuters]
T. R. Lenka, A. K. Panda, “Self-consistent Subband Calculations of AlxGa1-xN/(AlN)/GaN-based High Electron Mobility Transistor,” Advanced Materials Research (Trans Tech), Vol. 159, pp. 342-347, 2011. [Scopus]
T. R. Lenka, A. K. Panda, “Effect of Nanoscale AlN layer for improving 2DEG Transport properties in AlGaN/AlN/GaN-based HEMT,” International Journal of Pure and Applied Physics, Vol. 6, No. 4, pp.419-427, 2010.
T. R. Lenka, A. K. Panda, “Polarization Dependent Capacitance Voltage Analysis of GaN-based Heterostructure Field Effect Transistor,” International Journal of Materials Sciences, Vol. 5, No. 5, pp. 747-758, 2010.
T. R. Lenka, R. K. Misra, A. K. Panda, “RF Characteristics Study of AlxGa1-xAs/InxGa1-xAs/GaAs based Pseudomorphic High Electron Mobility Transistor,” International Journal of Electronic and Electrical Engineering, Vol. 4, No. 6, pp. 28-35, 2009.
T. R. Lenka, A. K. Panda, “Characteristics Study of Modulation Doped GaAs/InxGa1-xAs/AlxGa1-xAs based Pseudomorphic HEMT,” International Journal of Recent Trends in Engineering, Vol. 1, No. 3, pp. 186-190, 2009.
T. R. Lenka, C. K. Jha, “DFT based Implementation of Spatial-to-Frequency Domain Transformation of Image using VHDL,” International Journal of Electronics Engineering, Vol.1 (1), pp. 37-39, 2009.